DRAM 512MB Search Results

xdr rambus

Abstract: xdr elpida
Contextual Info: XDR DRAM 8x16Mx4 Advance Information Overview XDR DRAM CSP x4 Pinout The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 128M words by 4 bits. The use of Differential Rambus Signaling Level DRSL technology permits 4000/ 3200/2400 Mb/s transfer rates while using conventional system and board design technologies. XDR DRAM devices are

3654P

Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Contextual Info: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable

K4Y50164UE

Abstract: XDR DRAM XDR Rambus Rambus XDR 256Mx2 Samsung EOL K4Y50024UE-JC samsung memory q406
Contextual Info: XDRTM DRAM General Information XDRTM DRAM Product Guide Revision 0.5 Mar. 2006 Change History Revision 0.1 August ′03 - First Copy Revision 0.2 (Dec ′04) - Add C-die, D-bin Revision 0.3 (Mar ′05) - Add 512Mb XDR DRAM Revision 0.4 (Dec ′05) - Delete code 17 in organization

XDR 1gb

Abstract: XDR DRAM 80nm dram
Contextual Info: Rev. 0.0, Dec.2009 1Gb XDR features comparison with 512Mb A guide for user to use XDR DRAM Rev.0.0 1. XDR DRAM features comparison [Table 1] XDR DRAM features information table Comparison 512Mb E-die 1Gb E-die VDD 1.8V 1.5V Process 80nm 56nm Org X16/X8/X4/X2

104BA

Contextual Info: Preliminary K4Y5002 /04/08/16 4UC XDRTM DRAM 512Mbit XDR DRAM(C-die) 4M x 16(/8/4/2) bit x 8s Banks Version 0.3 Aug 2005 XDR is a trademark of Rambus Inc. Version 0.3 Aug 2005 Page -1 Preliminary K4Y5002(/04/08/16)4UC XDRTM DRAM Change History Version 0.1 (May 2005) - Preliminary

MT4LSDT1664HI133

Abstract: MT48LC16M32 MT4LSDT1664HI MT8LSDT6464HI-133 MEG32 MT48LC8M32 MT48LC4M32B2F5 MT48LC4M32LFF5 MT46V64M8FN MT8LSDT6464HI
Contextual Info: Industrial Temperature DRAM Micron’s Industrial Temperature DRAM For Ultimate Performance Under Extreme Conditions For products operating at temperatures ranging from -40°C to +85°C, Micron Technology’s extensive line of industrial temperature IT DRAM provides

samsung eMMC 4.5

Abstract: eMMC samsung* lpddr2 lpddr2 SAMSUNG emmc emmc 4.5 emmc samsung SAMSUNG moviNAND lpddr2 mcp samsung lpddr2
Contextual Info: Samsung Mobile Memory Taking Mobility to New Storage Horizons Mobile DRAM | Multi-Chip Packages | eMMC Samsung Mobile Memory Mobile DRAM The future of Mobile DRAM Performance and battery life are the key metrics upon which mobile electronics are measured. Samsung Mobile

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

MT8LSDT3264HI-133

Abstract: PC133 tsop 8X14 MT48LC16M16A2TG MT48LC4M32B2TG MT48LC4M32B2F5 MT48H32M16LF MT48LC8M32B2 MT48LC2M32B2TG MT48LC32M8A2TG
Contextual Info: Industrial Temperature DRAM Micron’s Industrial Temperature DRAM For Ultimate Performance Under Extreme Conditions For products operating at temperatures ranging from -40°C to +85°C, Micron Technology’s extensive line of industrial temperature IT DRAM provides outstanding performance and proven reliability. We

edo dram 72-pin simms 64mb

Abstract: 168pin dram socket 64mb 72-pin simm 64mb edo dram simm dram 72-pin simms 64mb edo dram 72-pin SO DIMM simm 256mb
Contextual Info: DRAM Module Product Overview. Preliminary DRAM Module Product Overview Introduction Module Descriptions DRAMs may be supplied on modules known as SIMMs, DIMMs, SO DIMMs or IC DRAM cards. These assemblies are designed in a well-defined industry standard format. There are significant

k4s510832c

Abstract: K4S510832C-KL
Contextual Info: K4S510832C CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Nov. 2001 Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations

RA12

Contextual Info: K4S510832B CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 April 2001 Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations

K4S511632C

Abstract: samsung cmos dram 4m x 4
Contextual Info: K4S511632C CMOS SDRAM DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations

RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH

MT29C1G24MADLAJA-6

Abstract: Micron 512MB nand FLASH MT29C2G24MAKLAJA-6 Micron 512MB nand FLASH mcp Flash MCp nand DRAM 137-ball JW190 137-Ball MCP NAND sDR mt29c 1g nand DDR mcp
Contextual Info: Preliminary‡ Micron Confidential and Proprietary 137-Ball NAND Flash with LP-DRAM MCP Features NAND Flash with LP-DRAM 137-Ball Multiple-Chip Package MCP MT29CxGxxMAxxxJA Current Production Part Numbers: Table 1 on page 2 Features Figure 1: • All-Micron NAND Flash and LP-DRAM

WEDPN8M72V-133BC

Contextual Info: WEDPN8M72V-133BC 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 133MHz ! Package: The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM

is42s86400

Contextual Info: IS42S86400B IS42S16320B 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION APRIL 2008 FEATURES • Clock frequency: 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed

IS42S16320B

Abstract: IS42S86400B
Contextual Info: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 JUNE 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed

IS42S86400B

Contextual Info: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 DECEMBER 2011 512Mb SYNCHRONOUS DRAM OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge

is42s16320

Contextual Info: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 DECEMBER 2010 512Mb SYNCHRONOUS DRAM OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge

Contextual Info: IS42S86400B IS42S16320B 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION SEPTEMBER 2008 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed

HYB18H512322BF

Abstract: qimonda hyb18h5
Contextual Info: March 2008 IDRD51-0-A1F1C–32C XDR DRAM 512-Mbit XDR DRAM RoHS compliant Data Sheet Rev. 1.0 Data Sheet IDRD51-0-A1F1C 512-Mbit XDR DRAM IDRD51-0-A1F1C–32C Revision History: 2008-03, Rev. 1.0 Page Subjects major changes since last revision All New Data Sheet

IDRD51-0-A1F1C

Contextual Info: October 2008 IDRD51-0-A1F1C–[32C/40C] XDR DRAM 512-Mbit XDR DRAM RoHS compliant Internet Data Sheet Rev. 1.10 Internet Data Sheet IDRD51-0-A1F1C 512-Mbit XDR DRAM IDRD51-0-A1F1C–[32C/40C] Revision History: 2008-10, Rev. 1.10 Page Subjects major changes since last revision

is42s16320

Abstract: IS42S16320B-7BLI is42s16320b IS42S16320B-7TLI IS42S86400B IS42S86400B-7TL IS42S16320B-7BL MA3006 D1130
Contextual Info: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 DECEMBER 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed