DRAM 17400 Search Results

HY514260

Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
Contextual Info: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .

64mb edo dram simm

Abstract: Dram 168 pin EDO 8Mx8 4Mx4 dram simm 17405CJ
Contextual Info: Product Introduction VISWi 1.1.1 4Mb DRAM 1.1.2 16Mb DRAM i Product Introduction 1.1.2 16Mb DRAM continued 2 Product Introduction 1.1.3 64Mb PRAM 64M bit 3.3 -r 8Mx8 Volt L 4M x 16 3 Product Introduction 1.1.4 16Mb SDRAM 1.1.5 64Mb SDRAM 1.1.6 8Mb SGRAM 3.3 Volt

edo ram 4Mx16

Abstract: 71V18163CJ6 16mx4 edo ram 16Mx4 1MX16
Contextual Info: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE DRAM Part Numbering g D RAM Module Part Numbering 12 D RAM Ordering Information 14 DRAM Module Ordering Information 15 3. DATA SHEETS DRAM 16M-bit GM 71C S 16400C(CL) 4Mx4, 5V, 4K Ref, FP

VG264265

Abstract: VG46VS8325AQ VM43217405CJSA VP4-64 VS46417801BTGC VG46VS8325BO VG264 VM83217400CJSA vs46417801bt VG46VS8325
Contextual Info: Product Selection Guide 1.2. Product Selection Guide DRAM DRAM Part Number 4 M h D ii V.M Description Conf./Vol. Access Time ns VG264260CJ VG26V4265CJ VG264265CJ 1 256K xl6 256Kxl6 256K xl6 5V 3,3V 5V 25/28/30/35 40/50/60 25/28/30/35 VG26(S)17400CJ VG26(S)17405CJ

Contextual Info: DRAM 4 • DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V+0.3V, Ta=0°C to +70°C Organization (Wx b ) Access Time max. (ns) Part Number Cycle Time min. (ns) Power Consumption max. (mW) Packages Standby Mode ! (CMOS level) SOJ TSOP 1.8 26P 26P 0.54 26P 26P

hb56d436br

Abstract: HB56D436BR-6
Contextual Info: HB56D436BR/SBR-6B/7B/8B Preliminary 4,194,304-Word x 35-Sit High Density Dynamic RAM Module HITACHI The HB56D436 is a 4 M x 36 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM HM5117400BS sealed in SOJ package and 4 pieces of 4-Mbit DRAM (HM514100CS) sealed in

Contextual Info: Ordering Information 1.3. Ordering Information DRAM/SDRAM/SGRAM VG XX VS xxxxxx X X Device P roduct P roduct Line 26 : Async- 36 : Sync. DRAM T C ustom er code Speed Async. Access Time 25:25ns 28:28ns 3:30ns 46 : Sync Gragh 35:35ns 4 :40ns . 5 :50ns 6 :60ns

Contextual Info: HB56D436 Series 4,194,304-word x 36-bit High Density Dynamic RAM Module HITACHI Description The HB56D436 is a 4 M x 36 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM HM5117400BS sealed in SOJ package and 4 pieces of 4-Mbit DRAM (HM514100CS) sealed in SOJ package. An outline of

Contextual Info: VM43217400D,VM83217400D 4M,8M x 32 - Bit Dynamic RAM Module VIS Description The VM43217400D and VM83217400D are 4M x 32-bit and 8M x 32-bit dynamic RAM modules. It is mounted by 8/16 pieces of 4M x 4 DRAM VG2617400D and each in a standard 24/26 pin plastic SOJ packages. Decoupling capacitors are mounted adjacent to each DRAM

Contextual Info: LG Semicon PRODUCT IMPEX • 4M DRAM GM71C4100C 4M x 1 Bit, 5V, 1KRef„ FPM - 25 GM71C4100E 4M x 1 Bit, 5V, 1KRef„ FPM - 34 GM71C4400C 1M x4B it, 5V, 1KRef., FPM - 44

VG264265B

Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Contextual Info: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D

Contextual Info: HB56TW433D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56TW433D is a 4 M x 32 dynamic RAM Small Outline DIMM S. O. DIMM , mounted 8 pieces of 16Mbit DRAM (HM51W 17400BTS/ BLTS) sealed in TSOP package. An outline of the HB56TW433D is

Contextual Info: HY51V S 17400HG/HGL 4M x 4Bit Fast Page DRAM PRELIMINARY DESCRIPTION The HY51V(S)17400HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit. HY51V(S)17400HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)17400HG/HGL offers Fast Page Mode as a high

Contextual Info: HB56TW433D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI Description The HB56TW433D is a 4 M x 32 dynamic RAM Small Outline DIMM S. O. DIMM , mounted 8 pieces of 16Mbit DRAM (HM51W17400BTS/ BLTS) sealed in TSOP package. An outline of the HB56TW433D is

Contextual Info: HY5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide

TCA 720

Contextual Info: HB56A432 Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI Description The HB56A432 is a 4 M x 32 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM HM5117400BS sealed in SOJ package. An outline of the HB56A432 is 72-pin single in-line package. Therefore, the

Contextual Info: VM43217405,VM83217405 4M,8Mx32-Bit Dynamic RAM Module Description The VM43217405 and VM83217405 are 4M x 32 - bit and 8M x 32 - bit dynamic RAM modules respec­ tively. It is mounted by 8/16 pieces of 4M x 4 DRAM VG2617405 which is sealed in a standard 24/26 pin

VM83217405

Contextual Info: VM43217405,VM83217405 4M,8MX32 - Bit Dynamic RAM Module VIS Description The VM43217405 and VM83217405 are 4M x 32 - bit and 8M x 32 - bit dynamic RAM modules respectively. It is mounted by 8/16 pieces of 4M x 4 DRAM VG2617405 which is sealed in a standard 24/26 pin

Contextual Info: HB56RW832DZJ Series 32 MB FP DRAM S.O.DIMM 8-Mword x 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M x 4 Components HITACHI ADE-203-768B (Z) Rev.2.0 Nov. 1997 Description The HB56RW832DZJ is a 8M x 32 dynamic RAM Small Outline Dual In-line Memory Module

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-42S4000LAC32 4 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The M C -42S4000LAC 32 is a 4,194,304 w ords by 32 bits dynam ic RAM module (Small Outline DIMM) on which 8 pieces of 16 M DRAM: ¿IPD42S17400L are assembled.

Nippon capacitors

Contextual Info: HB56RW832DZ J Series 32 MB FP DRAM S.O.DIMM 8-Mword x 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M x 4 Components HITACHI ADE-203-768B (Z) Rev.2.0 Nov. 1997 Description The HB56RW832DZJ is a 8M x 32 dynamic RAM Small Outline Dual In-line Memory Module

Nippon capacitors

Contextual Info: HB56RW872ES Series 64 MB Buffered FP DRAM DIMM 8-Mword X 72-bit, 4 k Refresh, 2-Bank Module 36 pcs of 4 M X 4 Components HITACHI ADE-203-775B (Z) Rev. 2.0 Nov. 1997 Description The HB56RW872ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

1GM7

Abstract: GM7IC clj60 clts GM71V64400 gm71c 65T6 L7800CT GM71C4403C
Contextual Info: MEMORY LINE-UP 1. DRAM I 4M 50ns 60ns l4Mxl •70 G M 71C4100CJ/CLJ-60 |— GM71C4100CJ- GM 7ÌC41000EJ-60 |— |G M 71C 410 q1 I 70 GM7IC4400CJ/CLJ-60 |— | GM71C4400CJ-70 GM71C4403CJ/CLJ-60 |—\ OM71C4403CJ-70 GM 71C4400EJ-60 |— | GM71C4400EJ-70 G M 71C4403E J-60

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-424000AB72F 4 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC D escription The MC-424000AB72F is a 4,194,304 w ords by 72 bits dynam ic RAM m odule on w hich 18 pieces o f 16 M DRAM: /¿PD4217400 are assembled.