DRAM 17400 Search Results

hb56d436br

Abstract: HB56D436BR-6
Contextual Info: HB56D436BR/SBR-6B/7B/8B Preliminary 4,194,304-Word x 35-Sit High Density Dynamic RAM Module HITACHI The HB56D436 is a 4 M x 36 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM HM5117400BS sealed in SOJ package and 4 pieces of 4-Mbit DRAM (HM514100CS) sealed in

Contextual Info: HB56TW433D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56TW433D is a 4 M x 32 dynamic RAM Small Outline DIMM S. O. DIMM , mounted 8 pieces of 16Mbit DRAM (HM51W 17400BTS/ BLTS) sealed in TSOP package. An outline of the HB56TW433D is

Contextual Info: HY51V S 17400HG/HGL 4M x 4Bit Fast Page DRAM PRELIMINARY DESCRIPTION The HY51V(S)17400HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit. HY51V(S)17400HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)17400HG/HGL offers Fast Page Mode as a high

Contextual Info: HY5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HB56RW832DZJ Series 32 MB FP DRAM S.O.DIMM 8-Mword x 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M x 4 Components HITACHI ADE-203-768B (Z) Rev.2.0 Nov. 1997 Description The HB56RW832DZJ is a 8M x 32 dynamic RAM Small Outline Dual In-line Memory Module

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-42S4000LAC32 4 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The M C -42S4000LAC 32 is a 4,194,304 w ords by 32 bits dynam ic RAM module (Small Outline DIMM) on which 8 pieces of 16 M DRAM: ¿IPD42S17400L are assembled.

Nippon capacitors

Contextual Info: HB56RW832DZ J Series 32 MB FP DRAM S.O.DIMM 8-Mword x 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M x 4 Components HITACHI ADE-203-768B (Z) Rev.2.0 Nov. 1997 Description The HB56RW832DZJ is a 8M x 32 dynamic RAM Small Outline Dual In-line Memory Module

Nippon capacitors

Contextual Info: HB56RW872ES Series 64 MB Buffered FP DRAM DIMM 8-Mword X 72-bit, 4 k Refresh, 2-Bank Module 36 pcs of 4 M X 4 Components HITACHI ADE-203-775B (Z) Rev. 2.0 Nov. 1997 Description The HB56RW872ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

Nippon capacitors

Contextual Info: HB56D836BR/SBR Series, HB56D436BR/SBR Series 8,388,608-word x 36-bit High Density Dynamic RAM Module 4,194,304-word x 36-bit High Density Dynamic RAM Module HITACHI ADE-203-729A Z Rev. 1.0 Feb. 20,1997 Description The HB56D836BR/SBR is a 8M x 36 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM

Nippon capacitors

Contextual Info: HB56RW832DZJ Series 8,388,608-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-768A Z Rev. 1.0 Apr. 21, 1997 Description The HB56RW832DZJ is a 8M x 32 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 16 pieces of 16-Mbit DRAM (HM51W17400) sealed in TCP package. An outline

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-42S4000LAC32S SERIES 4 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The MC-42S4000LAC32S series is a 4,194,304 words by 32 bits dynamic RAM module (Small Outline DIMM) on which 8 pieces of 16 M DRAM: /iPD42S17400LG3 (TSOP (II) are assembled.

Contextual Info: HB56AW472E-6/7 32 MB Buffered FP DRAM DIMM 4-Mword X 72-bit, 4 k Refresh, 1-Bank Module 18 pcs of 4 M X 4 Components HITACHI ADE-203-747C (Z) Rev. 3.0 Jan.23 1998 Description The HB56AW472E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

Contextual Info: HB56A832 Series 8,388,608-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56A832 is a 8M x 32 dynamic RAM module, mounted 16 pieces of 16Mbit DRAM HM5117400BS sealed in SOJ package. An outline of the HB56A832 is 72-pin single in-line package. Therefore, the

Hitachi DSA00164

Contextual Info: HM51W16400 Series HM51W17400 Series 16 M FP DRAM 4-Mword x 4-bit 4 k Refresh/2 k Refresh ADE-203-649E (Z) Rev. 5.0 Nov. 1997 Description The Hitachi HM51W16400 Series, HM51W17400 Series are CMOS dynamic RAMs organized 4,194,304word × 4-bit. They employ the most advanced 0.5 µm CMOS technology for high performance and low

Contextual Info: MEMORY 4 M X 4 BIT. E A S ll^ MB81V17400B-50/-60/-50L/-60L CMOS 4,194,304 x 4 Bit Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu MB81V17400B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The MB81V17400B features a “fast page” mode of operation whereby high­

MH4M32ANXJ

Abstract: 464W aatj CZL a6
Contextual Info: MITSUBISHI LS Is <DRAM MODULE FAST PAGE MODE DYNAMIC RAM 4M X 32 I £ O M: 128 BIT Max. Access T ype name Load m em ory tim e O u tw a rd d im e n sio n s Data sheet W X H X D m m ) page (ns) MH4M32AATJ-6 ★ 60 MH4M32AATJ-7 ★ 70 MH4M32AXJ-6 ★ M H4M32ANXJ-6

Contextual Info: MITSUBISHI LSIs DRAM MODULE FAST PAGE MODE DYNAMIC RAM 4 M X 72 V288M U O I V I BIT Max. Access Type name Load memory time Outward dimensions Data sheet W X H X D (m m ) page (ns) M H 4 M 7 2 A T J -6 ★ 60 M H 4 M 7 2 A T J -7 ★ ?o M 5M 417400A T P , RT

Nippon capacitors

Contextual Info: H B 5 6 T W 4 3 2 D /H B 5 6 T W 4 3 3 D S e r ie s 16 MB Unbuffered FP DRAM S.O.DIMM 4-Mword x 32-bit, 4 k/2 k Refresh, 1-Bank Module 8 pcs of 4 M x 4 Components HITACHI ADE-203-732B (Z) Rev.2.0 Nov. 1997 Description The HB56TW432D is a 4M x 32 dynamic RAM Small Outline Dual In-line Memory Module

IBM0117400T1 -60

Contextual Info: i = = = - = • = I B M 0 1 I B M 0 1 1 7 4 0 0 B P relim in ary 1 7 4 0 0 4M x 4 DR AM Features • 4,194,304 w ord by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V pow er supply • 2048 refresh cyd e s/32 m s • Low Power Dissipation - A c tiv e m a x -140m A /125m A /110m A /100m A

Contextual Info: S IE M E N S 4M x 4 - Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB5116400BJ/BT-50/-60 HYB5117400BJ/BT-50/-60 HYB3116400BJ(L)/BT(L)-50/-60 HYB3117400BJ( L)/BT(L)-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature

BST60

Contextual Info: TOSHIBA TC5117400BSJ/BST60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheT C 5117400B S J/B S T is the new generation dynamic RAM organized 4,194,304 word by 4 bits. T he T C 5117400B S J/ BST utilizes Toshiba's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operat­

Q67100-Q2006

Abstract: Q67100-Q982 514100BJ
Contextual Info: SIEMENS 4M X 36-Bit Dynamic RAM Module HYM 364020S/GS-60/-70 Preliminary Inform ation 4 194 304 words by 36-Bit organization alternative 8 388 608 words by 18-bit CAS-before-RAS refresh RAS-only-refresh Hidden-refresh Fast access and cycle time 60 ns access tim e

Q67100-Q2007

Abstract: Q67100-Q985
Contextual Info: SIEM EN S 8M x 36-Bit Dynamic RAM Module HYM 368020S/GS-60/-70 Prelim inary Inform ation • 24 decoupling capacitors mounted on substrate 8 388 608 words by 36-bit organization alternative 16 777 216 words by 18-bit All inputs, outputs and clocks fully

bt 33 f

Contextual Info: SIEMENS 4M X 4-Bit Dynamic RAM 3.3 V, 2k-refresh HYB 3117400BJ/BT -50/-60/-70 Prelim inary Inform ation 4 194 304 words by 4-bit organization 0 to 70 ‘C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)