HM5117400BS Search Results

Contextual Info: HB56D836 Series 8,388,608-word x 36-bit High Density Dynamic RAM Module HITACHI Description The HB56D836 is a 8 M x 36 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM HM5117400BS sealed in SOJ package and 8 pieces of 4-Mbit DRAM (HM514100CS) sealed in SOJ

Contextual Info: HB56D436 Series 4,194,304-word x 36-bit High Density Dynamic RAM Module HITACHI Description The HB56D436 is a 4 M x 36 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM HM5117400BS sealed in SOJ package and 4 pieces of 4-Mbit DRAM (HM514100CS) sealed in SOJ package. An outline of

Hitachi DSA0088

Abstract: Nippon capacitors
Contextual Info: HB56G48B-6B/7B/8B Preliminary 4,194,304-Word x 8-Bit High Density Dynamic RAM Module Rev. 0 Jul.10, 1995 The HB56G48B is a 4M X 8 dynamic RAM module, mounted 2 pieces of 16Mbit DRAM HM5117400BS sealed in SOJ package. An outline of the HB56G48B is 30-pin single

HB56A432

Contextual Info: HB56A432 Series 4,194,304-word x 32-bit High Density Dynamic RAM Module ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56A432 is a 4 M × 32 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM HM5117400BS sealed in SOJ package. An outline of the HB56A432 is 72-pin single in-line package.

HB56A832

Abstract: HB56A832BS-6B HB56A832BS-7B HB56A832BS-8B HB56A832SBS-6B HB56A832SBS-7B HB56A832SBS-8B
Contextual Info: HB56A832 Series 8,388,608-word x 32-bit High Density Dynamic RAM Module ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56A832 is a 8M × 32 dynamic RAM module, mounted 16 pieces of 16Mbit DRAM HM5117400BS sealed in SOJ package. An outline of the HB56A832 is 72-pin single in-line package.

HB56A432

Contextual Info: HB56A432 Series 4,194,304-word x 32-bit High Density Dynamic RAM Module ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56A432 is a 4 M × 32 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM HM5117400BS sealed in SOJ package. An outline of the HB56A432 is 72-pin single in-line package. Therefore, the

Contextual Info: HB56A432 Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56A432 is a 4 M x 32 dynamic RAM module, mounted 8 pieces o f 16-Mbit DRAM HM5117400BS sealed in SOJ package. An outline o f the HB56A432 is 72-pin single in-line package. Therefore, the

hb56d436br

Abstract: HB56D436BR-6
Contextual Info: HB56D436BR/SBR-6B/7B/8B Preliminary 4,194,304-Word x 35-Sit High Density Dynamic RAM Module HITACHI The HB56D436 is a 4 M x 36 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM HM5117400BS sealed in SOJ package and 4 pieces of 4-Mbit DRAM (HM514100CS) sealed in

Contextual Info: HB56A832 Series 8,388,608-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56A832 is a 8M x 32 dynamic RAM module, mounted 16 pieces of 16Mbit DRAM HM5117400BS sealed in SOJ package. An outline of the HB56A832 is 72-pin single in-line package. Therefore, the

Contextual Info: HB56A432 Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56A432 is a 4 M x 32 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM HM5117400BS sealed in SOJ package. An outline o f the HB56A432 is 72-pin single in-line package. Therefore, the

HB56D436

Abstract: HM514100
Contextual Info: HB56D436 Series 4,194,304-word x 36-bit High Density Dynamic RAM Module Description The HB56D436 is a 4 M × 36 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM HM5117400BS sealed in SOJ package and 4 pieces of 4-Mbit DRAM (HM514100CS) sealed in SOJ

TCA 720

Contextual Info: HB56A432 Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI Description The HB56A432 is a 4 M x 32 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM HM5117400BS sealed in SOJ package. An outline of the HB56A432 is 72-pin single in-line package. Therefore, the

Contextual Info: HB56A832 Series 8,388,608-word x 32-bit High Density Dynamic RAM Module Description The HB56A832 is a 8M x 32 dynamic RAM module, mounted 16 pieces of 16Mbit DRAM HM5117400BS sealed in SOJ package. An outline of the HB56A832 is 72-pin single in-line package. Therefore, the

Contextual Info: HB56A432 Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56A432 is a 4 M x 32 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM HM5117400BS sealed in SOJ package. An outline of the HB56A432 is 72-pin single in-line package. Therefore, the

HB56D836

Contextual Info: HB56D836 Series 8,388,608-word x 36-bit High Density Dynamic RAM Module Description The HB56D836 is a 8 M × 36 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM HM5117400BS sealed in SOJ package and 8 pieces of 4-Mbit DRAM (HM514100CS) sealed in SOJ

Hitachi DSA0088

Abstract: Nippon capacitors
Contextual Info: HB56G49B-6B/7B/8B Preliminary 4,194,304-Word x 9-Bit High Density Dynamic RAM Module Rev. 0 Jul. 10, 1995 The HB56G49B is a 4M X 9 dynamic RAM module, mounted 2 pieces of 16Mbit DRAM HM5117400BS sealed in SOJ package and 1 piece of 4Mbit DRAM ( HM514100CS ) sealed

Contextual Info: HB56D473EJ Series 4,194,304-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-439 Z Rev. 0.0 Jul. 24, 1995 Description The HB56D473EJ belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The HB56D473EJ is a 4 M

tca 786

Abstract: RS5104 RS-5104 TCA 789
Contextual Info: HM5117400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-369A Z Rev. 1.0 Nov. 15, 1995 Description The Hitachi HM5117400B is a CMOS dynamic RAM organized 4,194,304 word x 4 bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117400B offers Fast Page Mode

HM5117400BLS-6

Abstract: HM5117400BLS-7 HM5117400BLS-8 HM5117400BS-6 HM5117400BS-7 HM5117400BS-8 HM5117400BTS-6 HM5117400BTS-7 Hitachi DSA0015
Contextual Info: HM5117400B Series 4,194,304-word 4-bit Dynamic Random Access Memory ADE-203-369A Z Rev. 1.0 Nov. 15, 1995 Description The Hitachi HM5117400B is a CMOS dynamic RAM organized 4,194,304 word 4 bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117400B offers Fast Page Mode

am/256K-BIT

Contextual Info: HM5117400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-369A Z Rev. 1.0 Nov. 15, 1995 Description The Hitachi HM5117400B is a CMOS dynamic RAM organized 4,194,304 word x 4 bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117400B offers Fast Page Mode

Contextual Info: ADE-203-369 Z HM5117400B/BL Series 4,194,304-word x 4-bit Dynamic Random Access Memory Preliminary HITACHI T h e H ita c h i H M 5 1 1 7 4 0 0 B /B L is a C M O S dynam ic R A M organized 4 ,194,304-word x 4-bit. It em ploys the m ost advanced C M O S technology

74ABT16244

Abstract: HB56D473EJ
Contextual Info: HB56D473EJ Series 4,194,304-word x 72-bit High Density Dynamic RAM Module ADE-203-439 Z Rev. 0.0 Jul. 24, 1995 Description The HB56D473EJ belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

HM5117400BLS-6

Abstract: HM5117400BLS-7 HM5117400BLS-8 HM5117400BS-6 HM5117400BS-7 HM5117400BS-8 HM5117400BTS-6 HM5117400BTS-7
Contextual Info: HM5117400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory ADE-203-369A Z Rev. 1.0 Nov. 15, 1995 Description The Hitachi HM5117400B is a CMOS dynamic RAM organized 4,194,304 word × 4 bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117400B offers Fast Page Mode

Hitachi DSA00776

Abstract: HM5117400BLS-6 HM5117400BLS-7 HM5117400BLS-8 HM5117400BS-6 HM5117400BS-7 HM5117400BS-8 HM5117400BTS-6 HM5117400BTS-7 HM5117400BTS-8
Contextual Info: ADE-203-369A Z HM5117400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory Rev. 1.0 Mar. 15, 1996 The Hitachi HM5117400B is a CMOS dynamic RAM organized 4,194,304-word × 4-bit. It employs the most advanced CMOS technology for high performance and low power.