HY512260TC50
Abstract: HY512260JC50 hy512260 HY512260SLRC HY512260JC Y9543 HY512260JC-50
Contextual Info: «HYUNDAI H Y 5 1 2 2 6 0 S e r ie s 128KX 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY512260 is the new generation and fast dynamic RAM organized 131,072 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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hy512260
Contextual Info: • H Y U N D A I H Y 5 1 2 2 6 0 S e r ie s 128KX 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY512260 is the new generation and fast dynamic RAM organized 131,072 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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HY5116400BT
Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
Contextual Info: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC
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hy512264
Abstract: hy512260 8 bit dRAM Controller
Contextual Info: HY512260 128Kx16, CMOS DRAM with /2CAS DESCRIPTION This family is a 2M bit dynamic RAM organized 131,072 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Independent read and write of upper and
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hy512260128kx1616-bit16-bits+2hy5122648 bit dram controller
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marking q815
Contextual Info: H Y U N D A I - « H Y 512260 128Kx16. CMOS DRAM wlth/2CAS DESCRIPTION This family is a 2M bit dynamic RAM organized 131,072 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Independent read and write of upper and
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BEDO RAM
Abstract: hy5118160b HY512264 HY5117404 HY5118164B
Contextual Info: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE
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mn4117405
Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE
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cp005-1fis89c51z16c02z86e30+16zz16c03z8036z8536z8038z5380z53c80mn4117405nn5118165xl93lc46apnn514265ms6264l-10pcw24m257nn514265aw24m257ak-15hy62256alp10mhs p80c51
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UM61256AK-15
Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE
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cp005-1eas7c1024-12jcas7c1024-12pcas7c1024-12tjc+16as7c1024-12tpcas7c1024-15jcas7c1024-15pcas7c1024-15tjcas7c1024-15tpcas7c1024-20jcum61256ak-15um61256ak sramum61256ck-20hy62256alp10xl93lc46apw24m257gvt7164d32q-6km62256blg-7w24m257ak-15um61256
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HY514260
Abstract: HY5117404A 164-04A 4m 300mil
Contextual Info: I' PRODUCT AVAILABILITY DRAM PRODUCT 1Mbit 2M bit 4Mbit DESCRIPTION PACKAGE OPTION ACCESS TIME ns - As of '96.3Q OPERATI!« CURRENT (mA,MAX) STA»IDBY CURI*ENT (rtiA, MAX) TTL CMOS AVAILABILITY 1M x 1 F a s t Pa ge HY531000A SOJ 60/7 0/80 85/7 5/65 2 1
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AUO-PL321.60
Abstract: HY51V18164B HY514264 HY514260
Contextual Info: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP
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HY514260
Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
Contextual Info: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .
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