DQ201 Search Results

SILICONIX DG201

Abstract: DG202 SILICONIX DQ202 DG201A dg201abk siliconix DG201 dg202cj siliconix
Contextual Info: SILICONIX INC 03 8254735 SILICONIX » E § Û55473S 0012145 4 03E INC 3 Slllconix Slllconix Incorporated D 12145 DG201 A/202 Quad Monolithic SPST CMOS Analoa Switches T—51—11 FEATURES BENEFITS APPLICATIONS • + 15 Volt Input Range • Wide Dynamic Range

952a

Abstract: EPR-83 KBR-480B
Contextual Info: TOSHIBA U C /U P SHE D • T0 T 7 2 4 T DDSG12Ö S2T « T 0 S 3 T O S H IB A TM P47C452A /952A C M O S 4 -B IT M IC R O C O N T R O L L E R TMP47C452AN TMP47C452AF The 4/J£452A is a high perform ance 4-bit single chip m icrocom puter based on the TLCS-47 CMOS series. And

Contextual Info: P300A THRU P300M GENERAL PURPOSE PLASTIC RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3 .0 Amperes FEATURES DQ-201 AD ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability ' ♦ Typical I r less than 0.1 aA

Contextual Info: SRP300ATHRU SRP300K FAST SWITCHING PLASTIC RECTIFIER Reverse Voltage - 50 to 800 Volts Forward Current -3 .0 Amperes _ FEATURES_ DQ-201 AD ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability

Contextual Info: GI500 THRU GI510 GENERAL PURPOSE PLASTIC RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current -3 .0 Amperes FEATURES DQ-201 AD ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability ♦ Typical I r less than 0.1 aA

Contextual Info: SB320 THRU SB360 MEDIUM CURRENT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 60 Volts Forward Current - 3 .0 Amperes FEATURES DQ-201 AD ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Metal to silicon rectifier, majority

Contextual Info: UG3001-UG3005 Vishay Lite-On Power Semiconductor 3.0A Ultra-Fast Glass Passivated Rectifiers Features • G lass passivated die construction • Diffused junction • U ltra -fa s t sw itching fo r high efficiency • High current capability and low forw ard voltage

diode SB560

Contextual Info: SB520-SB560 Vishay Lite-On Power Semiconductor 5.0A Schottky Barrier Rectifiers Features • Schottky barrier chip • Guard ring die construction for transient protection • High surge capability • Low power loss, high efficiency • Surge overload rating to 150A peak

Contextual Info: 1N5400G-1N5408G Vishay Lite-On Power Semiconductor 3.0A Glass Passivated Rectifier Features • G lass passivated die construction • Diffused junction • High current capability and low forw ard voltage drop • Surge overload rating to 125A peak • Plastic m aterial - UL R ecognition flam m ability

Contextual Info: BY396PTHRU BY399P SOFT RECOVER FAST - SWITCHING PLASTIC RECTIFIER Reverse Voltage - 100 to 800 Volts Forward Current - 3 .0 Amperes FEATURES DQ-201 AD 1.0 2 5 .4 MIN. 0.210 (5 .3) 0 . 1 9 0 (4 .8) ’ DIA. 0.3 7 5 (9 .5) 0.2 8 5 (7.2) ♦ Plastic package has Underwriters Laboratory

Contextual Info: HER301 HER308 THRU HIGH EFFICIENCY RECTIFIERS DQ-201 AD FEATURES: 0.220 5.6 0.197(5.0) DIA. • Low forward voltage drop • • • • High High High High current capability reliability surge current capability speed switching MECHANICAL DATA Case : Molded plastic

Contextual Info: 1N5400 THRU 1 N 54 08 SILICON RECTIFIERS DQ-201 AD FEATURES: 0.210 5.3 0.190(4.8) DIA. • Low cost • • • • High surge current capability Low leakage current Low forward voltage drop Diffused junction 1.0(25.4) MIN. 0.375(9.5) 0.285(7.2) MECHANICAL DATA

OC31

Contextual Info: GI850 THRU GI858 FAST SWITCHING PLASTIC RECTIFIER Reverse Voltage - 50 to 800 Volts Forward Current - 3 .0 Amperes _ FEATURES_ DQ-201 AD ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability

Contextual Info: HIE D TAIWAN LITON ELECTRONIC U T E H iH • flflBSb'iS D0QM23H 110 » T L I T KBPC3005 thru 310 SEMICONDUCTORS 'V ' i 'h - v s VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Ampere« PBPC-3 .445 111.3 FEATURES • • Rating to 1000V PRV Surge overload rating to 45 Amperes peak

M58BF008

Abstract: PQFP80 1A000-1BFFF 7N80
Contextual Info: M58BF008 8 Mbit 256Kb x32, Burst Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 5V for Program, Erase and Read – VDDQ = 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) ■ CONFIGURABLE OPTIONS

DG201ACJ

Abstract: DG201A DG201ACK ceramic injection dg202
Contextual Info: 4302271 ÜDSnEB b “ì5 • HAS DG201A, DG202 30 HARRIS S E M I C O N D U C T O R Quad SPST CMOS Analog Switches December 1993 Features Description • ±15V Input Signal Range • Logic Inputs Accept Negative Voltages The DG201A normally open and DG202 (normally closed)

Contextual Info: SB320THRU SB360 MEDIUM CURRENT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 60 Volts Forward Current - 3.0 Amperes FEATURES C ase Style DQ-201 AD ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Metal to silicon rectifier, majority

DG201BK

Abstract: dg201 cross DG201 DG201AK DG201CJ IH5201 IH5201CPE IH5201IJE IH5201MJE Intersil
Contextual Info: 'SSIIIL D G 2 0 1 /IH 5 2 0 1 Quad SPST CMOS Analog Switches FEATURES GENERAL DESCRIPTION • Switches Greater Than 28VP.P Signals With ± 15V Supplies • Quiescent Current Less Than 100pA • Break-Before-Make Switching t0ff= lOOnsec, ton = Typically SOOnsec

DQ501

Abstract: Nippon capacitors
Contextual Info: HB56AW1672E-5/6 128MB Buffered FP DRAM DIMM 16-Mword X 72-bit, 8k Refresh, 1 Bank Module 18 pcs of 16M X 4 components HITACHI ADE-203-857(Z) Preliminary, Rev. 0.0 Nov. 11, 1997 Description The HB56AW 1672E belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been

CRSH3-6

Abstract: CN5823 CN5824 CN5825
Contextual Info: Schottky R ectifiers Continued lo (AMPS) 3.0 @ Ta (OC) 25 25 25 25 100 250 250 250 IFSM (AMPS) 8.0 5.0 / DQ-201 AD CASE VRRM (VOLTS) 20 CRSH3-2 CN5823 CRSH5-2 CRSH8A-2 30 CRSH3-3 CN5824 CRSH5-3 CRSH8A-3 40 CRSH3-4 CN5825 CRSH5-4 CRSH8A-4 50 CRSH3-5 CRSH5-5

IC MAX327

Abstract: MAX326CEE MAX326CPE MAX326CSE
Contextual Info: 19-3966. Rav 2; 7/96 / U I / I X I / M Quad, SPST, Ultra-Low Leakage, CMOS Analog Switches „Feature* ♦ 10pA Max Leakage <1pA Typ The MAX326/MAX327&#39;s low charge, injection (2pC typ) minimizes signal error. Operation from single supplies (+10V to +30V), dual supplies (±5V to ±18V), and unbal­

IN6817

Abstract: IN5822 SR5045 sr560 HER207 iN6818 in6819 SFa5 SR540 IN5818
Contextual Info: RECTRON LT» 24E D • T ~ 0 l-0 f 7blOS45 0D000G5 S ■ SCHOTTKY BARRIER RECTIFIERS O PERATIN G TEM P ER A T U R E RANGE 20V to 45V: -6 5 ° C to +125°C, 50V to 60V: -6 5 °C to +150' STO RAG E TEM P ER A T U R E -6 5 °C to +150°G TYPE Maximum Peak Reverse

1N4007 sma

Abstract: P600I D0214AC SMA D0-214AB BY359-1500 BY228-1500 BYX90G 1N4003 1N4004 1N4007
Contextual Info: MHTEPTEKC ww w.i-t.ru ¡nfo@ i-t.ru electronics Ten: 095 739-09-95 C T a H A a p T H b ie B b in p A M M T e n b H b ie flM O A b i Kofl: iFmax [A] 1N4002 1N4003 1N4004 1N4005 1N4007 V Rmax [B] 100 200 400 600 1000 If [A] 1,0 1,0 1,0 V f npw [B] 1,1 1,1

1N5400G

Abstract: 1N5408G 5402G 5406G
Contextual Info: is TAIWAN SEMICONDUCTOR 1N5400G -1N5408G 3.0 AMPS. Glass Passivated Rectifiers DQ-201 AD RoHS COMPLIANCE -m - 1 .0 2 5 .4 MIN. Features 4- Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability