DQ015 Search Results

6DI15S-050

Abstract: 6DI10A-050 IC M605 6di30a-120 1DI100MA-050 6DI30A-050 EVF31H-035 2DI150M-120 M605 1DI200M-120
Contextual Info: COLLMER SEMICONDUCTOR INC MAE D I 25307=12 DQ01574 5GÛ « C O L <& Power Darlington Modules 4 PACK/6 PACK VCEX' VCEO Device Type Vceo Volts VCEO Volts sus Volts ic Pc cont. Watts Amps (per Xstr) Switching time (Max.) ton ts tf jisec. usee. ^sec. Ic Amps.

lm814

Abstract: ID32-001
Contextual Info: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR

Contextual Info: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 208 Plastic Ball Grid Array PBGA , 16 x 23mm-1.0mm pitch 2.5V ±0.2V core power supply

Contextual Info: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm

A43L0616A

Abstract: A43L0616AV
Contextual Info: A43L0616A 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue December 4, 2000 Preliminary 0.1 Add input/output capacitance specification February 13, 2001

IS46R16160B

Abstract: zentel is43r16160b
Contextual Info: IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B 32Mx8, 16Mx16 256Mb DDR Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/

ACT-D16M96S

Abstract: BSA1 BS-B1
Contextual Info: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module May 29, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM

HY514460

Contextual Info: •HYUNDAI HY514460 Series SEMICONDUCTOR 256 Kx164 R C MO S DRAM with 2 C A S & W P B PRELIMINARY DESCRIPTION The HY514460 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access

Contextual Info: PRELIMINARY 5 VOLT FlashFile MEMORY 28F160S5 and 28F320S5 x8/x16 Two 32-Byte Write Buffers — 2 \is per Byte Effective Programming Time Operating Voltage 5 V Vcc — — 5 V V pp 70 ns Read Access Time (16 Mbit) 90 ns Read Access Time (32 Mbit) High-Density Symmetrically-Blocked

GPR323A16A

Contextual Info: GPR323A16A 16M x 16 bit Synchronous DRAM SDRAM Dec. 5, 2008 Version 1.0 GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without prior notice. TECHNOLOGY INC. is believed to be accurate and reliable. Information provided by GENERALPLUS

LH28F320BFHE-PBTL80

Abstract: AP-007-SW-E
Contextual Info: Date 32M x16 Flash Memory LH28F320BFHE-PBTL80 Aug. 28. 2001 LHF32F12 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company.

LH28F800BJHE-PBTLT9

Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F800BJHE-PBTLT9 Flash Memory 8Mbit 1Mbitx8 (Model Number: LHF80JT9) Lead-free (Pb-free) Spec. Issue Date: October 8, 2004 Spec No: EL16X081 LHF80JT9 ●Handle this document carefully for it contains material protected by international copyright law.

LH28F640BFHG-PBTL70A

Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F640BFHG-PBTL70A Flash Memory 64Mbit 4Mbitx16 (Model Number: LHF64FH9) Spec. Issue Date: September 27, 2004 Spec No: FM045022A LHF64FH9 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,

LH28F320BFHE-PBTLF1

Abstract: Flash Memory 32Mbit DQ15DQ0
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F320BFHE-PBTLF1 Flash Memory 32Mbit 2Mbitx16 (Model Number: LHF32FF1 Lead-free (Pb-free) Spec. Issue Date: October 15, 2004 Spec No: EL16X114 LHF32FF1 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,

WED416S8030A

Contextual Info: WED416S8030A 2M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,

LH28F160S3NS-L10

Abstract: LHF16KA1
Contextual Info: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160S3NS-L10 Flash Memory 16M 2M x 8/1M × 16 (Model No.: LHF16KA1) Issue Date: March 16, 2001 sharp LHF16KA1 ●Handle this document carefully for it contains material protected by international copyright

LH28F160S3HNS-L10A

Abstract: LHF16KAU
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160S3HNS-L10A Flash Memory 16M 2MB x 8 / 1MB × 16 (Model No.: LHF16KAU) Spec No.: EL138074 Issue Date: September 5, 2001 sharp LHF16KAU ●Handle this document carefully for it contains material protected by international copyright

K4C560838C-TCB

Contextual Info: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.2 - 1 - REV. 0.2 Jan. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM

LH28F800BJHB-PTTL10

Abstract: FC004 ap007 7D002
Contextual Info: Date 8M x8/x16 Flash Memory LH28F800BJHB-PTTL10 Jul. 6. 2001 LHF80J24 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written

Enhanced SDRAM

Contextual Info: 64Mbit – Enhanced SDRAM 8Mx8, 4Mx16 ESDRAM Preliminary Data Sheet Overview Features • • • • • • • • • • • • • • High Performance 166 MHz Superset to SDRAM 100% Pin Compatible with SDRAM 100% Function and Timing Compatible with JEDEC

SM3603

Abstract: Enhanced Memory Systems 8mx8 SM3604T-7
Contextual Info: 64Mbit – High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Data Sheet Features Description • • • • The Enhanced Memory Systems SM3603 and SM3604 HighSpeed SDRAM HSDRAM devices are high performance versions of the proposed JEDEC PC-133 SDRAM. While compatible with standard SDRAM, they provide the faster

LH28F160BGH-TL

Abstract: LH28F160BG-TL TSOP048-P-1220
Contextual Info: LH28F160BG-TL/BGH-TL LH28F160BG-TL/BGH-TL 16 M-bit 1 MB x 16 Smart 3 Flash Memories DESCRIPTION Y R A L FEATURES • Enhanced automated suspend options – Word write suspend to read – Block erase suspend to word write – Block erase suspend to read • SRAM-compatible write interface

M2S56D20

Abstract: M2S56D20AKT M2S56D30AKT M2S56D40AKT
Contextual Info: DDR SDRAM Rev.1.0 MITSUBISHI LSIs M2S56D20/ 30/ 40AKT Jul. '01 Preliminary 256M Double Data Rate Synchronous DRAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION M2S56D20AKT is a 4-bank x 16,777,216-word x 4-bit, M2S56D30AKT is a 4-bank x 8,388,608-word x 8-bit,

making a10

Abstract: M2V56S20 M2V56S20ATP M2V56S30ATP M2V56S40ATP a10 da1
Contextual Info: SDRAM Rev.1.01 Single Data Rate MITSUBISHI LSIs M2V56S20/ 30/ 40 ATP -5, -6, -7 Jul '01 256M Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION M2V56S20ATP is a 4-bank x 16777216-word x 4-bit, M2V56S30ATP is a 4-bank x 8388608-word x 8-bit,