DO-40 DIODE Search Results

fjt1101

Abstract: FJT1102 1N456A 1N459A FJT1100 1N456 1N457 1N457A 1N458 1N458A
Contextual Info: Device No. • Package No. Glass Package V RRM (V) c V F (nA) Min Max @ V R (V) (V) Min @ Max 'f (mA) (PF) Process No. Max 1N456 DO-35 30 25 25 1 40 1N456A DO-35 30 25 25 1 100 1N457 DO-35 70 25 60 1 20 1N457A DO-35 70 25 60 1 100 1N458 DO-35 150 25 125

1N4450

Abstract: DO-204AH
Contextual Info: Certificate TH97/10561QM 1N4450 Certificate TW00/17276EM HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Reverse voltage:max. 30 V • Peak reverse voltage:max. 40 V • Pb / RoHS Free 1.00 (25.4) min.

Contextual Info: BAX14 SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 20 V • Repetitive peak reverse voltage: max. 40 V • Repetitive peak forward current: max. 2 A. • Pb / RoHS Free

1N4933-E3

Abstract: 1N4933 1N4937 DO-204AL JESD22-B102D J-STD-002B 1N4935 Vishay
Contextual Info: 1N4933 thru 1N4937 Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds DO-204AL DO-41

SRP100D

Abstract: DO-204AL JESD22-B102 J-STD-002 SRP100A SRP100K
Contextual Info: SRP100A thru SRP100K Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 260 °C, 40 s DO-204AL DO-41

Contextual Info: 1N4933 thru 1N4937 Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds DO-204AL DO-41

DIODE 1N827

Contextual Info: IN T E R N A T IO N A L •=1000370 0000007 T 40 « I S E M 41E S EM IC O N D JEDEC REGISTERED, TEMPERATURE COMPENSATED VOLTAGE REFERENCE DIODES DO-7 Package MAXIMUM RATINGS MECHANICAL Operating Temperature: -65°Cto+200°C Herm etically Sealed DO-35 Storage Temperature: -65°C to +200°C

Contextual Info: MBR7520 thru MBR7540R Silicon Power Schottky Diode VRRM = 20 V - 40 V IF AV = 75 A Features • High Surge Capability • Types from 20 V to 40 V VRRM DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode.

Contextual Info: BYS11-90 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier Major Ratings and Characteristics IF AV 1.5 A VRRM 90 V IFSM 40 A VF 0.75 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data • • • • • • • • Case: DO-214AC (SMA)

1N5820

Abstract: 1N5821 1N5822
Contextual Info: 1N5820 - 1N5822 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 40 Volts IO : 3.0 Ampere DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward voltage drop

LL101B

Abstract: LL101C SD101B SD101C SMD Schottky Dioden
Contextual Info: SD101B . SD101C SD101B . SD101C Schottky Barrier Diodes Schottky-Barrier Dioden Version 2010-12-06 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 40.50 V Glass case Glasgehäuse 3.9 62.5 Ø 1.9 15 mA DO-35

10BF10

Abstract: 10BF20 10BF40 10BF60 10BF80 Device Code 10 diode 10bf60
Contextual Info: Preliminary Data Sheet PD-20482 rev. B 06/99 10BF. Series SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE SMB DO-214AA Features Major Ratings and Characteristics Characteristics 10BF. 10 20 40 Units 60 80 For surface mounted applications Low profile package

KV2101

Contextual Info: KV2101 SILICON HYPERABRUPT TUNING VARACTOR PACKAGE STYLE DO-7 DESCRIPTION: The ASI KV2101 is a Silicon Hyperabrupt Tuning Varactor Diode Designed for UHF Applications up to 800 MHz.The Cathode is Indicated by a Color Band. MAXIMUM RATINGS IF 40 mA VR 22 V

KV2101

Abstract: KV2101A
Contextual Info: KV2101A SILICON HYPERABRUPT TUNING VARACTOR PACKAGE STYLE DO-7 DESCRIPTION: The ASI KV2101A is a Silicon Hyperabrupt Tuning Varactor Diode Designed for UHF Applications up to 800 MHz.The Cathode is Indicated by a Color Band. MAXIMUM RATINGS IF 40 mA VR 22 V

KV2202A

Contextual Info: KV2202A SILICON HYPERABRUPT TUNING VARACTOR PACKAGE STYLE DO-7 DESCRIPTION: The ASI KV2202A is a Silicon Hyperabrupt Tuning Varactor Diode Designed for UHF Applications up to 500 MHz.The Cathode is Indicated by a Color Band. MAXIMUM RATINGS IF 40 mA VR 15 V

CT70

Abstract: CT54 CT40 CT41 CT42 CT43 CT44 CT45 CT46 CT47
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD CT 40 TO CT 59 CT 70 TO CT 79 500mW DO- 35 Glass Axial Package FEATURES General Purpose Hermetically Sealed Glass Package Switching Diode

Contextual Info: FR40B05 thru FR40JR05 Silicon Fast Recovery Diode VRRM = 100 V - 600 V IF = 40 A Features • High Surge Capability • Types from 100 V to 600 V VRRM DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.

Part Marking STMicroelectronics

Abstract: ST Low Forward Voltage Schottky Diode DIODE 1N5822 1N5821 1N5822 data sheet forward converter LOW DROP POWER SCHOTTKY RECTIFIER 1N5820 1N5822
Contextual Info: 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF AV 3A VRRM 40 V Tj 150°C VF (max) 0.475 V FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP DO-201AD

zener 4c3

Abstract: 10c1 4C16 4c18 4C3 zener diode 4C10 4C12 NKT4C11 10C242
Contextual Info: Silicon Zener Diodes Silicon Zener Diodes in DO-7 glass package Type Characteristics at T gmb= 2 5 °C ohms SZ @ 5m A x10 -4 /o c 70 .< 80) 70 ( < 80) 70 ( < 80) 50 (< 7 5 ) 40 ( < 70) 30 ( < 60) 10 (< 4 0 ) 4,8 ( < 10) 4,5 (< 8) 4 (< 7 ) 4 ,5 ( < 7 ) 4 ,8 ( < 1 0 )

Contextual Info: SK24A - SK215A 2.0 Amp. Surface Mount Schottky Barrier Rectifier Current 2.0 A Voltage 40 V to 150 V DO-214AC / SMA FEATURES • Low profile package • Ideal for automated placement • Low power losses, high efficiency • High surge current capability • Guarding for overvoltage protection

Contextual Info: SK24A - SK215A 2.0 Amp. Surface Mount Schottky Barrier Rectifier Current 2.0 A Voltage 40 V to 150 V DO-214AC / SMA FEATURES • Low profile package • Ideal for automated placement • Low power losses, high efficiency • High surge current capability • Guarding for overvoltage protection

Contextual Info: SK24A - SK215A 2.0 Amp. Surface Mount Schottky Barrier Rectifier Current 2.0 A Voltage 40 V to 150 V DO-214AC SMA FEATURES • Low profile package • Ideal for automated placement • Low power losses, high efficiency • High surge current capability • Guarding for overvoltage protection

diode avalanche DSA 25 8

Abstract: 17-12A diode avalanche DSA ixys dsi 17-16-A DIODE DSA 18 1712A
Contextual Info: DS 17 DSA 17 VRRM = 800-1800 V IF RMS = 40 A IF(AV)M = 25 A Rectifier Diode Avalanche Diode VRSM V(BR)minÿ① VRRM Anode DO-203 AA Cathode V V V 900 1300 - 800 1200 DS 17-08A DS 17-12A DSI 17-08A DSI 17-12A 1300 1700 1900 1300 1750 1950 1200 1600 1800 DSA 17-12A

1N458B

Abstract: 1N5426 AMERICAN POWER DEVICES 1n914 1N5208 1N444 1N456 1N456A 1N457 1N457A 1N458
Contextual Info: AMERIC AN POWER D EVICES 53E D • 0737135 00000E3 — 1 DO-35 Case Type Peak Inverse Voltage Minimum Forward Current @25°C 1N456 1N456A 1N457 1N457A 1N458 PIV V mA 30 30 70 70 150 40 @ 100 @ 20 @ 100 @ 7@ If @ V f V 1 1 1 1 1 Maximum Capacitance Maximum