Cypress marking code
Abstract: DL818
Contextual Info: Preliminary ComL- DL818 1:8 Clock Fanout Buffer Product Features Product Description • The CYPRESS ComL-series of logic circuits are produced using advanced 0.35-micron CMOS technology, achieving the industries fastest logic. Low Voltage Operation VDD = 3.3V
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dl81835-micron400mhzcoml-dl818+1cypress marking code
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lvds 20 pin to 30 pin
Abstract: LVDS 31 pin lvds 26 pin lvds standard 20 pin lvds 32 pin LVDS 20 pin of 30 pin LVDS DL818
Contextual Info: Preliminary ComL- DL818 1:8 Clock Fanout Buffer Product Features Product Description • The CYPRESS ComL-series of logic circuits are produced using advanced 0.35-micron CMOS technology, achieving the industries fastest logic. Low Voltage Operation VDD = 3.3V
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dl81835-micron400mhzcoml-dl818+7lvds 20 pin to 30 pinlvds 31 pinlvds 26 pinlvds standard 20 pinlvds 32 pinlvds 20 pinof 30 pin lvds
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dallas date code ds1230
Abstract: 25091 e8 sot223 24446
Contextual Info: RELIABILITY MONITOR STRESS: WRITE CYCLE STRESS CONDITIONS: 85 C, 7.0 VOLTS MONITOR DATE ASSEMBLY PRODUCT REV DATE JOB NO CODE FACILITY LOT NO. DS1621 A7 JUN '99 24325 9915 ATP Anam, PI DK815282AAB SOIC 50 47 DS1869 A3 SEP '99 24445 9907 NSEB DJ824247ABA SOIC
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ds1621ds1869dk815282aabdj824247aba+9dm846764aads2502ds87c520dn901118aabdk935356aabdallas date code ds123025091e8 sot22324446
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Hyundai 9944
Abstract: nseb ds1000m-100 DS2165Q
Contextual Info: RELIABILITY MONITOR DS1000M-100 OCT '99 MONITOR DEVICE REVISION DATE CODE LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1000 E3 DIP 300 CPS ChipPac, C 9944 PROCESS Single Poly, Single Metal DH927108AJC 8 1.2 µm Standard Process JOB NO DESCRIPT Cf: 60% Ea: 0.7
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ds1000m-100ds1000dh927108ajcds87c520+4dn901118aabhyundai 9944nsebds2165q
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dallas date code ds12887
Abstract: dallas date code P23073 DS1225A DALLAS DS80C320 9832 P23403 dallas date code ds80c320 P23074
Contextual Info: RELIABILITY MONITOR STRESS: ULTRASOUND CONDITIONS: J-STD-020 MONITOR DATE ASSEMBLY PRODUCT REV DATE JOB NO CODE FACILITY LOT NO. PACKAGE DS1233 A5 JAN 99 P23064 9842 CARSEM DM823017AB SOT-223 DS1803 A2 NOV 98 P22797 9833 CHIPPAC, KOREA DS1869 A3 MAR 99 P23360
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j-std-020dm823017abds1233ds1803+15ds1869ds2109ds2153ds2175ds5002p23064dallas date code ds12887dallas date codep23073ds1225adallas ds80c3209832p23403dallas date code ds80c320p23074
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DS1233 a5
Abstract: e8 sot223 9915 dallas 25010 DN819 densit DS1232L ds1232l datasheet DS1869 DK815282AAB
Contextual Info: RELIABILITY MONITOR STRESS: WRITE CYCLE STRESS CONDITIONS: 85 C, 7.0 VOLTS MONITOR DATE ASSEMBLY DATE PRODUCT REV JOB NO CODE FACILITY LOT NO. DS1621 A7 JUN '99 24325 9915 ATP Anam, PI DK815282AAB SOIC 50 45 DS1621 A7 SEP '99 24466 9930 ATP (Anam, PI) DK906731AAC SOIC
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ds1621dk815282aabdk906731aacds1869+11dj821534abbdj824252aacdj824247abads1233 a5e8 sot2239915dallas 25010dn819densitds1232lds1232l datasheet
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74 HTC 192
Abstract: DS2165Q
Contextual Info: RELIABILITY MONITOR DS1000M-100 JAN '99 MONITOR-HYUNDAI,CHINA DEVICE REVISION DATE CODE LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1000 E3 DIP 300 CPS China 9847 PROCESS Single Poly, Single Metal DH833179ADA 8 1.2 µm Standard Process JOB NO DESCRIPT Cf: 60%
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ds1000m-100ds1000dh833179adahour99+6ds87c520dn825394aabj-std-02030c/6074 htc 192ds2165q
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fds5002
Abstract: dallas E8 24715
Contextual Info: RELIABILITY MONITOR STRESS: WRITE CYCLE STRESS CONDITIONS: 85 C, 7.0 VOLTS MONITOR DATE ASSEMBLY PRODUCT REV DATE JOB NO CODE FACILITY LOT NO. DS1621 A7 JUN '99 24325 9915 ATP Anam, PI DK815282AAB SOIC 50 45 DS1621 A7 SEP '99 24466 9930 ATP (Anam, PI) DK906731AAC SOIC
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ds1621ds1869dk815282aabdk906731aac+6dj821534abbdj824252aacdj824247abafds5002dallas e824715
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DN901118AAB
Abstract: c5 99 sot223 dk91
Contextual Info: RELIABILITY MONITOR PROCESS: STRESS: 0.6 µm Double Poly, Single Metal Ti/TiN layers used on all Metals INFANT LIFE READ POINT QTY FAILS MONITOR DATE ASSEMBLY PRODUCT REV DATE JOB NO CODE FACILITY LOT NO. PACKAGE DS2502 C2 JUN '99 24169 9915 Carsem S DM846764AA
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dm846764aadm849359acds2502dn901118aab+2c5 99 sot223dk91
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ti 9919
Contextual Info: RELIABILITY MONITOR PROCESS: STRESS: 0.6 µm Double Poly, Single Metal Ti/TiN layers used on all Metals INFANT LIFE READ POINT QTY FAILS MONITOR DATE ASSEMBLY PRODUCT REV DATE JOB NO CODE FACILITY LOT NO. PACKAGE DS2502 C2 JUN '99 24169 9915 Carsem S DM846764AA
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dm846764aadm842206aldm849359acds2502+1ti 9919
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DS87520
Abstract: P2305 P23855
Contextual Info: RELIABILITY MONITOR DS1000M-100 JAN '99 MONITOR-HYUNDAI,CHINA DEVICE REVISION DATE CODE LOT NUMBER PACKAGE ASSEMBLY SITE DS1000 E3 DH833179ADA 8 PIN PDIP CHIPPAC, CHINA CPS 9847 PROCESS Single Poly, Single Metal 1.2 µm Standard Process JOB NO DESCRIPT Cf: 60%
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ds1000m-100ds1000dh833179adap23057+9p23178dn825394aabp23415p23306p23307j-std-020ds87520p2305p23855
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DM92
Abstract: DM-92 472E-06
Contextual Info: RELIABILITY MONITOR DS1232L APR '99 MONITOR-CHIPPAC,KOREA DEVICE REVISION DATE CODE LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1232L C2 SOIC 150 CPK ChipPac, K 9848 PROCESS Single Poly, Single Metal DL829603AAC 8 0.8 µm Standard Process JOB NO DESCRIPT
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74 HTC 00
Abstract: 74 HTC 08 DS1302 DIE REVISION Hyundai 9944
Contextual Info: RELIABILITY MONITOR DS1000M-100 OCT '99 MONITOR DEVICE REVISION DATE CD LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1000 E3 300 9944 PROCESS Single Poly, Single Metal DH927108AJC 8 PDIP CPS ChipPac, China 1.2 µm Standard Process JOB NO DESCRIPT Cf: 60%
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ds1000m-100ds1000dh927108ajcdk935356aab+6j-std-02030c/6074 htc 0074 htc 08ds1302 die revisionhyundai 9944
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DS2175D1
Contextual Info: RELIABILITY MONITOR PROCESS: STRESS: 0.6 µm Single Poly, Single Metal Ti/TiN layers used on all Metals INFANT LIFE MONITOR DATE ASSEMBLY PRODUCT REV DATE JOB NO CODE FACILITY LOT NO. PACKAGE DS2401 READ POINT QTY FAILS C2 MAR '99 P23371 9851 CARSEM DM832008AIA
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