DISCRET SEMICONDUCTOR Search Results

Contextual Info: Property http://semicon.sanyo. com/en/search/property.php?clcd=149&prod=DBA250G SANYO Semiconductor Co., Ltd. S A \Y O Rectifying Diodes—Single-Phase Bridge Rectifying Diodes □ sp lay a list Discret e Devices Prod uct Information Type No. DBA250G Category

Contextual Info: 2N6724/MPS6724/2N6725/MPS6725 NATL SEMI COND DISCRET E HE D J bSOllBO 00372^4 b £K1 National át¡á Semiconductor 2N6724 2N6725 f MPS6724 MPS6725 TO-237 4 TL/G/10100-8 W II TO-226AE V TL/G/10100-4 NPN Darlington T ra n sisto r Electrical C h a ra cte ristics

Contextual Info: ”TD D E|‘lUTi’riòÙUüjbbdbii I i TOSHIBA -CDISCRETE/OPTO} 90D 16351 9097250 TOSHIBA DISCRETÊ/OPTO SEMICONDUCTOR 07^33-35 TOSHIBA CTR MODULE M G 15 0 M 2 C K 1 SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

LTD201R-11

Abstract: LTD101R-11 LTD203R-11 LTD211R-11 LTD227R-11 LTD233R-11 LTD234R-11 LTD232R11 inx5
Contextual Info: N AUER PHILIPS/DISCRET E ESE D • bbS3T31 QQlbaSb S ■ T^*f|-3S' 78 Optoelectronic Devices LIQUID CRYSTAL DISPLAYS, STANDARD in order of character size ' DISPLAY FORMAT TYPE LTD211 R-11 GLASS SIZE CHARACTER SIZE (mm) (mm) 38.0 x 20.3 6.0 R-21 F-11 69.8 X 20.3

ceramic capacitor philips 561

Abstract: AI mm sot 553 BLV98CE IEC134 transistor k 117 GR
Contextual Info: N AMER PHILIPS/DISCRE TE bTE J> >hiliDs Semiconductors BLV98CE Data sheet status Product specification date of issue March 1 9 9 3 bbS3T31 ODe^lflD 2flG * A P X UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve high power gain

BGY587B

Abstract: DIN45004B
Contextual Info: bbSBTBl Philips Semiconductors 0 D 3 2 4 ÜD E2Û M A P V Product specification BGY587B CATV amplifier module N AMER PHILIPS/DISCR ETE PINNING-SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION input • Extremely low noise 1 • Silicon nitride passivation

J108

Abstract: J110 J109 2J108
Contextual Info: I Philips Semiconductors Data sheet status Product specification date of issue July 1993 FEATURES bb53*ï31 0024002 353 * A P X N AMER PHILIPS /DI SCRETE J108/J109/J110 N-channel junction FETs P IN N IN G -T O -9 2 • High speed switching • Interchangeabitity of drain and

P-Channel JFET

Abstract: philips 2N4393 2N5116 2N4393 DDS4111 philips jfet
Contextual Info: I 1^53^31 DDS4111 S3Ö « A P X Philips Semiconductors Data sheet status Preliminary specification date of issue July 1993 FEATURES • P-channel com plem ent of 2N4393 • S hort sam ple and hold aperture tim e. 2N5116 NAI1ER philips/]>iscre:te: P-channel J-FET

Contextual Info: TOSHIBA O I S C R E T E / O P T O } ^ 9097250 TOSHIBA CDISCRETE/OPTO ¿jashih SEMICONDUCTOR DE I t O T T S S G O D l b b b S 99D 16665 ^~T- 3ci-J3 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 3 8 7 SILICON N CHANNEL MOS TYPE 7 T - M 0 S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS

opto A3121

Abstract: A3121 MG30G6EL2 1251C DT-33-35
Contextual Info: T oshiba -c d i s c r e t l / ü p t ü j 9097250 TOSHIBA TOSHIBA TO < D I S C R E TE/OPTO SEMICONDUCTOR DE J j K n 7 E S G ODlbSEb 90D DT-33-35 16226 H TOSHIBA GTR MODULE MG3 0 G 6 E L 2 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.

BGY582

Abstract: BGY583 DIN45004B
Contextual Info: Philips Semiconductors bbSBTBl 0035304 255 CATV amplifier modules — ^ • Extrem ely low noise 1 input • Silicon nitride passivation 2 comm on • Rugged construction 3 comm on • Optim al reliability ensured by 5 +VB TiPtAu m etallized crystals. 7 comm on

684 k 100

Abstract: BFT93 BFR93 BFR93A TRANSISTOR D 1765 lc 945 p transistor NPN
Contextual Info: bbSBTBl 0 0 £5 3*15 TDM HIAPX — N AUER PHILIPS/DISCRETE b?E » PNP 5 GHz wideband transistor Philips Semiconductors — DESCRIPTION Product specification ^ BFT93 ^ PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF

BYD34D

Abstract: BYD34J BYD34G BYD34M MCB984 BYD34K c1020 DTL philips
Contextual Info: N AMER P H IL IPS/DISCRETE b'lE D • Philips Semiconductors bbSa^l Avalanche fast soft-recovery x. . rectifier diodes DESCRIPTION Glass passivated rectifier diodes in hermetically sealed axial-leaded ID implosion diode glass envelopes. They are intended for television and

lte in philips

Abstract: BUK454-500B T0220AB
Contextual Info: N AMER P H I L I P S / D I S C R E T E fc»TE D • 0 0 3 0 b2 5 b6 S H A P X fcifc.Sa'm Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BSP127

Abstract: transistor t 270
Contextual Info: 1^53^31 Philips Sem iconductors 0023043 53b APX Product specification N-channel enhancement mode BSP127 vertical D-MOS transistor N A H ER PHILIPS/ DISCRETE b?E D QUICK REFERENCE DATA FEATURES SYMBOL • Direct Interface to C-MOS, TTL, etc. V qs • High-speed switching

BUK443

Abstract: BUK443-60A BUK443-60B transistor 5BM
Contextual Info: N AMER PHIL IPS /DISCRETE bTE D m ^^ 53^31 0 D 3 D5 1 S ÔS 5 H A P X Philips Semiconductors Product Specification PowerMCS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic fuil-pack envelope. The device is Intended for use In

DIODE SW-05

Contextual Info: SEMICONDUCTOR KIB3401F TECHNICAL DATA BICD LINEAR INTEGRATED CIRCUIT The KIB3401F is a monolithic step-up DC/DC converter specifically designed to drive white LEDs with a constant current from Li-ion cell. Relative large 320mV feedback voltage & it’s high accuracy help you

BUK551-100A

Abstract: BUK551-100B T0220AB
Contextual Info: N AMFR P H I L I P S / D I S C R E T E bTE D • ^53^31 QQ3D77S QT1 ■ APX Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fleld-effect power transistor in a plastic envelope.

BSP254A

Abstract: BSP254
Contextual Info: bb53^31 P h ilip s GD23aa5 7^5 « A P X S e m ic o n d u c t o r s Data sheet status Product specification date of issue July 1993 BSP254/BSP254A P-channel enhancement mode vertical D-MOS transistor b7E T> N AUER PH ILI PS/DISCRETE PIN CO NFIGURATION FEATURES

Contextual Info: SEMICONDUCTOR KIB3401F TECHNICAL DATA BICD LINEAR INTEGRATED CIRCUIT The KIB3401F is a monolithic step-up DC/DC converter specifically designed to drive white LEDs with a constant current from Li-ion cell. Relative large 320mV feedback voltage & it’s high accuracy help you

Contextual Info: SEMICONDUCTOR KIB3402F TECHNICAL DATA BICD LINEAR INTEGRATED CIRCUIT White LED Step-Up Converter The KIB3402F is a monolithic step-up DC/DC converter specifically designed to drive white LEDs with a constant current from Li-ion cell. Relative large 320mV feedback voltage & it s high accuracy help you

KIB3401F

Abstract: KDR720E KTK5132V LQH32CN100K53L KDR412 KDR730E KIB3041F pin out led 1602
Contextual Info: SEMICONDUCTOR KIB3401F TECHNICAL DATA BICD LINEAR INTEGRATED CIRCUIT White LED Step-Up Converter The KIB3401F is a monolithic step-up DC/DC converter specifically designed to drive white LEDs with a constant current from Li-ion cell. Relative large 320mV feedback voltage & it’s high accuracy help you

KDR720E

Abstract: KIB3401F KDR412 KDR730E KIB3041F KTK5132V LQH32CN100K53L pin out led 1602
Contextual Info: SEMICONDUCTOR KIB3401F TECHNICAL DATA BICD LINEAR INTEGRATED CIRCUIT White LED Step-Up Converter The KIB3401F is a monolithic step-up DC/DC converter specifically designed to drive white LEDs with a constant current from Li-ion cell. Relative large 320mV feedback voltage & it’s high accuracy help you

Contextual Info: SEMICONDUCTOR KIB3401F TECHNICAL DATA BICD LINEAR INTEGRATED CIRCUIT White LED Step-Up Converter The KIB3401F is a monolithic step-up DC/DC converter specifically designed to drive white LEDs with a constant current from Li-ion cell. Relative large 320mV feedback voltage & it’s high accuracy help you