0D324 Search Results

BGY787

Contextual Info: 0D32423 Philips Semiconductors 6ES APX Preliminary specification CATV amplifier module BGY787 N AMER PHILIPS/DISCRETE PINNING -SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation

Contextual Info: bbSHTBl 0D32423 625 Philips Semiconductors APX Preliminary specification CATV amplifier module BGY787 N AMER PHILIPS/DISCRETE FEATURES PINNING - SOT115C PIN • Excellent linearity • Extremely low noise input • Silicon nitride passivation 2 common • Rugged construction

Contextual Info: HN29WT800/HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537 Z Preliminary - Rev. 0.0 J u n .14,1996 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitlineNOR) type memory cells, thatrealize programming and erase

rbbb

Contextual Info: KM416V254DJ ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

Philips FA 153

Contextual Info: Philips Sem iconductors tjb S 3 T 3 1 0033M13 T flb M A P X Prelim inary specification Hybrid CATV amplifier module BGY685AL N AUER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING -SOT115C PIN • Excellent linearity DESCRIPTION • Extremely low noise

am29f010

Contextual Info: a Am29F010 Advanced Micro Devices 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power consumption ■ Compatible with JEDEC-standard commands

OM926

Abstract: philips hybrid philips hybrid amplifier modules philips television circuit diagram
Contextual Info: QQ32HSb 271 M AP X Philips Semiconductors Product specification OM926 Hybrid wideband amplifier N AMER PHILIPS/DISCR ETE DESCRIPTION PIN CONFIGURATION PINNING A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is

Contextual Info: Pr o d u c t S p e c if ic a t io n < £ 3 L0 E Z85230 E S C C E n h a n c e d S e r ia l C o m m u n ic a t io n C o n t r o l l e r FEATURES • Deeper Data FIFOs - 4-Byte Transm it FIFO - 8-Byte Receive FIFO ■ Program m able FIFO Interrupt Levels Provide Flexible

Contextual Info: KS88C0216 ELECTR O NICS Microcontroller DESCRIPTION The K S88C 0216/0416 is an 8-bit microcontroller which is designed for Monitor or general application. The K S88C 0216/0416 uses powerful SA M -8 C PU 2 which is improved from SA M -8 C P U . The main peripherals are

bt438

Abstract: bt ramdac BT438KPJ BT438KC
Contextual Info: Bt438 Distinguishing Features Customer Benefits • 250 MHz Operation • Differential ECL Clock Generation • Ability to Divide by 3,4, 5, or 8 of the Clock • Ability to Divide by 2 and 4 of the Load • Ability to Reset Pipeline Delay of the RAMDAC • 1.2 V Voltage Reference Output

philips ph 116 capacitor

Contextual Info: bbS3T31 0 0 3 2 4 ^ 12T « A P X Philips Semiconductors Product specification Hybrid integrated circuit VHF/UHF wideband amplifier OM2046 N AUER PHILIPS/DISCRETE DESCRIPTION PIN CONFIGURATION PINNING A one-stage wideband amplifier in hybrid integrated circuit technology

Contextual Info: • bbS3T31 DD3E4b3 401 H A P X N AUER PHIL IPS /DISCR ETE b'JE » O M 2045 HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER One-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for aerial amplifiers in car radios, caravans or RATV and MATV applications.

Contextual Info: HARRIS SEMICONt SECTOR MOE t M 43D2271 DD32M72 fl B H A S T- 7 5 - / / - Z . I ¡Jj H a r r i s C B C 2 D 2 2 1 2 1 1 2 C M O S 4 x 4 x 2 Crosspoint Switch With Control Memory A u g u s t 1991 Features D escription • L o w O N R e s is t a n c e . 7 5 V T y p . a t V d d = 1 2 V

C254D

Abstract: cmos dram NCC KMQ
Contextual Info: KM416V254DJ ELECTRONICS CMOS D R A M 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

Contextual Info: b b 5 3 T 3 1 Philips Sem iconductors DD3S40T 4SS M APX Preliminary specification Hybrid CATV amplifier module “ “ BGY685 — N AMER PHILIPS/DISCRETE PIN CONFIGURATION PINNING-SOT115C FEATURES PIN DESCRIPTION • Excellent linearity • Extremely low noise

Contextual Info: P r o d u c t S p e c if ic a t io n < £ > Z iL 0 5 Z85233 EMSCC e n h a n c e d mono S e r ia l C o m m u n ic a t io n C o n t r o l l e r FEATURES • Deeper Data FIFOs - 4-Byte Transmit FIFO - 8-Byte Receive FIFO ■ Improved SDLC Frame Status FIFO

Contextual Info: Preliminary Data Sheet April 1998 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations L8560 Low-Power SLIC with Ringing Features Description • Full feature set for central office applications The L8560 full-feature, low-power subscriber line

qml38535

Abstract: qml-38535 CQCC1-N20 DS90C031 GDFP2-F16 SMD marking code 55B
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Add caso outline F. Make changes to 1.2.4, 1.3, and FIGURE 1. - ro 97-10-20 R. MONNIN Make change to power dissipation as specified under 1.3. - ro 97-11-18 R. MONNIN THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED.

OM926

Contextual Info: Philips Semiconductors bbSB^Bl 0Q32H5b 271 M APX Product specification Hybrid wideband amplifier OM926 N AMER PHILIPS/DISCRETE DESCRIPTION PIN CONFIGURATION PINNING A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is

Contextual Info: <S>ZJLO E P r o d u c t S p e c if ic a t io n Z85C80 S C S C I S e r ia l C o m m u n ic a t io n s A n d S m a l l C o m p u t e r in t e r f a c e FEATURES • Low Power CMOS ■ Local Loopback and Auto Echo Modes ■ Two Independent, SCC Interface, Full-D uplex

C254D

Contextual Info: KM416V254DT ELECTRONICS CMOS DR AM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

philips om2050

Abstract: OM2050 ei ferrite core 21911N
Contextual Info: N AUER PHILIPS/DISCRETE b'îE D • IAPX bbSB'îBl D O B S 1!?1! 2^7 OM2050 HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Two-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for R A T V and M A T V applications.

BGY685

Abstract: DIN45004B
Contextual Info: Philips Sem iconductors M bbS3T31 0 0 3 2 4 0 ^ 455 H A P X P r e l im in ? ^ Hybrid C A T V amplifier m odule — — — n AMER P H I L I P S / D I S C R E T E PIN Excellent linearity Extremely low noise 1 input • Silicon nitride passivation 2 common •