DIODE Y1 Search Results

Contextual Info: ERE24* ERE74 2 oa FAST RECOVERY DIODE I Features • Glass passivated chip • 7 *9 vj Y16 Stud mounted : Applications + .T A 'V l - 's y ^ 31 • ?-3 'y '< — Switching power supplies Free-wheel diode fr 'fJ ir • •' <7— Snubber diode • Others. Maximum Ratings and Characteristics

ad130

Abstract: D1103 d1105 MMAD1109 AD1107
Contextual Info: MOTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA M onolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching

diode G21

Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
Contextual Info: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith

HIGH VOLTAGE SCR 10kv

Abstract: 8kv DIODE SP725AB
Contextual Info: TVS Diode Arrays SPA Devices General Purpose ESD Protection - SP725 Series SP725 Series 5pF 8kV Diode Array RoHS Pb GREEN The SP725 is an array of SCR/Diode bipolar structures for ESD and overvoltage protection of sensitive input circuits. The SP725 has 2 protection SCR/Diode device structures

diode Lz 66

Abstract: diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 FMMD914 diode marking x6 BZX84-C15
Contextual Info: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C am bient tem perature Max. Type FM MD914 HD3A BAV70 BAV74 HD 2A BAV99 BAW 56 HD 4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith

Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP725 Series SP725 Series 5pF 8kV Diode Array RoHS Pb GREEN Description The SP725 is an array of SCR/Diode bipolar structures for ESD and overvoltage protection of sensitive input circuits. The SP725 has 2 protection SCR/Diode device structures

SP0504SHTG

Abstract: marking 6c sot23-6
Contextual Info: TVS Diode Arrays SPA Family of Products Low Capacitance ESD Protection - SP0504S Series SP0504S Series 0.85pF Diode Array RoHS Pb GREEN The SP0504S has ultra low capacitance rail-to-rail diodes with an additional zener diode fabricated in a proprietary

Contextual Info: TVS Diode Arrays SPA Diodes Low Capacitance ESD Protection - SP3010 Series SP3010 Series 0.45pF Diode Array RoHS Pb GREEN Description The SP3010 integrates 4 channels of ultra-low capacitance rail-to-rail diodes and an additional zener diode to provide

Contextual Info: TVS Diode Arrays SPA Diodes Low Capacitance ESD Protection - SP0524P Series SP0524P Series 0.5pF Diode Array RoHS Pb GREEN Description The SP0524P integrates 4 channels of ultra low capacitance rail-to-rail diodes and an additional zener diode to provide

MAD130P

Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

Contextual Info: TVS Diode Arrays SPA Diodes Low Capacitance ESD Protection - SP0504S Series SP0504S Series 0.85pF Diode Array RoHS Pb GREEN Description The SP0504S has ultra low capacitance rail-to-rail diodes with an additional zener diode fabricated in a proprietary

Contextual Info: TVS Diode Arrays SPA Diodes Low Capacitance ESD Protection - SP0524P Series SP0524P Series 0.5pF Diode Array RoHS Pb GREEN Description The SP0524P integrates 4 channels of ultra low capacitance rail-to-rail diodes and an additional zener diode to provide

SP721AG

Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP721 Series SP721 Series 3pF 4kV Diode Array RoHS Pb GREEN Description The SP721 is an array of SCR/Diode bipolar structures for ESD and over-voltage protection to sensitive input circuits.

C-150

Abstract: IRFI840G IRGIB6B60KD PD944
Contextual Info: PD-94427C IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 94385A IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD-94427A IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

NTHD4P02FT1G

Abstract: marking code vishay SILICONIX SMD TSOP C3 NTHD4P02F NTHD4P02FT1
Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal

diode 10a 400v

Abstract: 10a 400v bipolar transistor transistor IRF 630 ultrafast diode 10a 400v ultrafast swiching transistor C-150 IRFI840G IRGIB10B60KD1
Contextual Info: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

IGBT 60A 1200V

Abstract: IGBT 1200V 60A IRGB5B120KDPBF TO-220aB rr
Contextual Info: PD - 95617 IRGB5B120KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

TRANSISTOR BIPOLAR 400V 20A

Abstract: C-150 IRFI840G IRGIB10B60KD1
Contextual Info: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

transistor irf 645

Abstract: diode 400v 2A ultrafast AN-994 C-150 IRFR120 IRFU120 IRGR3B60KD2 R120 all transistor IRF 310 RG3250
Contextual Info: PD - 94601A IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

C-150

Abstract: IRGIB6B60KD ANSI PD-94427D
Contextual Info: PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

transistor BR 9013

Abstract: C-150 IRFI840G IRGIB15B60KD1 swiching 30A current source
Contextual Info: PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

C-150

Abstract: IRFI840G IRGIB10B60KD1
Contextual Info: PD-94576 IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.