DIODE T 25-4 JO Search Results

10N03

Abstract: 06N03 VU050-12N03 04n03 14n03 VU050-16N03 VU050-08N03 IT5 rectifier 16N03 12n03
Contextual Info: MbE D • 4 h ñ b 25 b 0 0 G 1 25 5 3 H I X Y I X Y S CORP 'T-Z.SiQ^ g m -< n TYYS k_J Data Sheet No. 911004A - November 1991 Three-Phase Diode Rectifier Bridge VU050 FEATURES:_ • Isolated Direct Copper Bond Base Plate

003S5

Abstract: ATI 1026 Sn 4011 1N6641 DIODE MARKING EJL 1N6639 1N6639US 1N6640 1N6640US 1N6641US
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 Nov 94. j j | 1 METR IC MIL-S-19500/609A 4 August 1994 SUPERSEDING MIL-S-19500/609 25 January 1993 M I L I T A R Y SP E C I F I C A T I O N SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Em itter Diode and Built-in Efficient Antisaturation Netw ork T h e B U D 4 4D 2 is s ta te -o f-a rt High Speed High gain BIPolar transistor H 2B IP .

BAW* diode

Abstract: diode device data on semiconductor MGA881
Contextual Info: SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * TECHNICAL DATA BAW156LT1 DUAL SURFACE MOUNT SWITCHING DIODE Medium Switching Time Low Leakage Current Applications Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol

SKiiP 33 NEC 125 To

Abstract: skiip 33 ups 063 skiip 32 ups 063 semikron skiip 33 nec skiip 85 UPS 06 skiip 33 nec 125 t semikron skiip 33 NEC 125 semikron skiip 32 ups 063 skiip 32 ups 06 SKIIP 33 UPS 06
Contextual Info: MiniSKiiP Technology
Pressure contact of all power and auxiliary connections instead of soldered joints.
Integration of latest chip technology: • • • • • • Low switching loss 1200 V, homogeneous NPT IGBTs with antiparallel CAL-diodes Low forward loss 600 V PT-IGBTs with antiparallel

Contextual Info: International jog Rectifier HEXFET Power MOSFET • • • • • • MB5545H DDISSTB S2D WMIUR PD-9.573B IRFPE50 INTERNATIO N AL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling

IN4149

Abstract: cv8790 CV7040 Diode BAY 61 IS923 IN917 CV8617 texas is920 IS920 IN4448
Contextual Info: 1 Small Signal Diodes Explanation of Device Coding Devices prefixed " 1 N " are JGDEC Joint Electronic Device Engineering Council registered devices. These-type numbers are recognised in the USA. Devices prefixed "1 S " are Texas Instruments in-house numbers.

Contextual Info: SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA MMBD914LT1 HIGH-SPEED SWITCHING DIODE Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc

mmbd2836

Contextual Info: MMBD2835/6LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA MONOLITHIC DUAL SWITCHING DIODE Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit 2835 2836 Reverse Voltage VR 35 75 Vdc Forward Current

Contextual Info: MMBD2837/8LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA MONOLITHIC DUAL SWITCHING DIODE Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Rating Characteristic Symbol 2837 2838 Unit Reverse Voltage VR 35 50 Vdc Peak Reverse Voltage

semikron skkt snubber

Abstract: semikron SKFT 150 how to control firing angle in thyristor RC snubber dv/dt diode gto 3 phase motor soft starter circuit diagram SKKD thyristor welder semipack skkt igbt firing circuit for single phase induction motor semikron thyristor skkt
Contextual Info: 1. SEMIPACK Thyristor/Diode Modules Features Typical Applications • Heat transfer through ceramic isolated metal baseplate • Soft starters for induction motors • Hard soldered joints for high reliability • Input rectifier for inverter drives • UL recognized; file no. E 63 532

Contextual Info: SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * TECHNICAL DATA BAW56LT1 DUAL SURFACE MOUNT SWITCHING DIODE Fast Switching Speed High Conductance Surface Mount Package Ideally Suited for Package:SOT-23 Automatic Insertion ABSOLUTE MAXIMUM RATINGS at Ta=25℃

oki marking

Contextual Info: Specifications for MQW Pulsed Laser Diode Cooled DIL Module with Single Mode Fiber 1625nm+/-20nm, 100mW OL6204N-100/AP20 Receipt 1st Issued: May. / 19 / 99 Drawing Number : JOG-00667 OL6204N-100/AP20 First edition page 1 of 4 Oki Electric Industry Co., Ltd.

QRB1134

Abstract: 150mF
Contextual Info: EQ REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRB1133/1134 DESCRIPTION PACKAGE DIMENSIONS — .328 8.33 .420(10.67)— (A) (K) SHRINK TUBING OVER. SOLDER JOINT .226 (5.74) 150 (3.81) NOM POINT OF OPTIMUM RESPONSE (C)| _J 24.0 (609.60) MIN #26 AWG I .373 (9.47)

power electronic handbook

Contextual Info: BAS116LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA SURFACE MOUNT SWITCHING DIODE • Low Leakage Current Applications Package:SOT-23 • Medium Speed Switching Times ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Non-Repetitive Peak Reverse Voltage

ce 2826 ic

Contextual Info: O rdering num ber: EN 2826 Jo.2826 HPA100R NPN Triple Diffused Planar Silicon Composite Transistor Ultrahigh-Defmition CRT Display Horizontal Deflection Output Applications F e a tu re s • Highspeed tf typ = 100ns • High breakdown voltage (Vcbo = 1500V)

m5c diode

Contextual Info: SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd MMBD7000LT1 TECHNICAL DATA GENERAL-PURPOSE SIGNAL AND SWITCHING DIODE Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Reverse Voltage VR 100 Vdc Forward Current

Contextual Info: _ SÌ3850DV Vishay Siliconix Complementary MOSFET Half-Bridge N-/P-Ch V m CV) N-Channel R DS|ON) 20 P-Channei I d (A) JO) 0.500 @ VGS = 4.5 V -20 ±1.2 0.750 @ VQS » 3.0 V ±1.0 1.00 @ VGS= -4 .5 V ±0.85 1.30 0 V<$s = “ 3.0 V

5bm Marking

Contextual Info: MMBD6100LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA DUAL SURFACE MOUNT SWITCHING DIODE * Fast Switching Speed * High Conductance * Surface Mount Package Ideally Suited for Automatic Insertion Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at T=25℃

block diagram for automatic room power control

Abstract: microcontroller optics fiber "laser diode Driver Circuit" apc ups schematic AN137 AN140 AN156 X9520 X9530 "network interface cards"
Contextual Info: Using the X9530 in Fiber Optic Applications Application Note July 6, 2005 AN156.0 Author: Joe Ciancio 1 Introduction Fiber optics are used more and more everyday in the areas of telecommunications, and data networks. Transmitter boards used in such networks as SONET and SDH,

NDL5731P

Abstract: DL-5735 DL5735 DL-57
Contextual Info: N E C ELECTRONI CS INC bSE D • bME7SES 0037=552 'JOT INECE DATA SHEET NEC LASER DIODE MODULE NDL5 7 3 1 P ELECTRON DEVICE 1 310 nm O PTICA L FIBER COM M UNICATIONS InGaAsP DC-PBH LASER DIODE MODULE DESCRIPTION NDL5731P is a 1 310 nm laser diode DIP module with singlemode fiber and internal thermo-electric cooler. It is designed for a

a548

Abstract: ESC011M-15 diode M15 A5-50 ESC011M-15I5A
Contextual Info: ESC011M-15 5A FA ST RECOVERY DIODE : Features • Ki&ttTv, Dam per diode fo r high definition TV and high resolution display. • - 1i I/ - ^ ^ D am per and m odulater diode are jointed in a body. • m m m t f & m z n t z 7;p ^ - ju v w ? Insulated package by fully m olding.

buz 90 af

Contextual Info: fiflD » • 88D ê23SbQ5 0014604 3 ■ S I E Û _ 14804 D T “ 3 eì-/1 _ BUZ 83 SIEMENS AKTIENGESELLSCHAF Main ratings N-Channel » 800 V Draln-source voltage Its = 2,9 A Continuous drain current Jo Draln-source on-resistance ^DS on = 4,0 n Description

irfp460 dc welding circuit diagram

Abstract: irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt
Contextual Info: Version 1.1 , June 2000 Application Note AN-CoolMOS-02 CoolMOS Selection Guide Author: Ilia Zverev, Jon Hancock Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS Selection Guide This selection guide shows the main application fields of CoolMOS transistors, answers