DIODE T 25-4 JO Search Results

panasonic date code e l

Abstract: MATSUA VCO
Contextual Info: ID« % Approved « i fp Checked « pp Checked ÌB U /T Y P E & $1 jjt/S T R U C T U R E GaP ^ /O U T L IN E Ptf Condition STANDARDS K G aP /R ed Light Em itting Diode(GaP) 7F #3 / Indicators Ü 3 /Attached ^ 1 I fp IFDC Vr 70 150 25 4 mW mA mA V Topr -25 ~

Contextual Info: s e MIKRO n SKiiP 662 GB 060 - 251 WT Absolute Maximum Ratings Symbol ¡Conditions1 Values Units 600 400 600 1200 - 4 0 .+ 150 2500 600 1200 4300 93 V Operating DC link voltage T heatsink - 25 °C Theatsink = 25 °C, tp < 1 ms IG BT & Diode A C, 1 min.

10N03

Abstract: 06N03 VU050-12N03 04n03 14n03 VU050-16N03 VU050-08N03 IT5 rectifier 16N03 12n03
Contextual Info: MbE D • 4 h ñ b 25 b 0 0 G 1 25 5 3 H I X Y I X Y S CORP 'T-Z.SiQ^ g m -< n TYYS k_J Data Sheet No. 911004A - November 1991 Three-Phase Diode Rectifier Bridge VU050 FEATURES:_ • Isolated Direct Copper Bond Base Plate

003S5

Abstract: ATI 1026 Sn 4011 1N6641 DIODE MARKING EJL 1N6639 1N6639US 1N6640 1N6640US 1N6641US
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 Nov 94. j j | 1 METR IC MIL-S-19500/609A 4 August 1994 SUPERSEDING MIL-S-19500/609 25 January 1993 M I L I T A R Y SP E C I F I C A T I O N SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Em itter Diode and Built-in Efficient Antisaturation Netw ork T h e B U D 4 4D 2 is s ta te -o f-a rt High Speed High gain BIPolar transistor H 2B IP .

Semikron sk 75

Contextual Info: SEMIKRON V rsm I frms m axim um va lue fo r continuous operation V rrm 300 A Fast Diode Modules V I fav (sin. 180; T case = 75 °C; 50 Hz) 165 A 400 S K K E 165 M 0 4 600 S K K E 165 M 06 800 S K K E 165 M 08 Symbol Conditions 160 A Ifav Ifsm Tvj = 25 °C; 10 ms

diode 300v 20a

Abstract: SF20LC30SM SF10LC30SM SF20LC30 diode 300v df20lc30 shindengen m
Contextual Info: Vol.03-21-e / March 2004 C o m m e rc i a l i z a t i o n o f a U l t r a - h i g h S p e e d 3 0 0 V L o w - l o s s D i o d e f o r P l a s m a D i s p l a y s Yukio Nakayama – Senior Staff Electronic Device Div. Group Semiconductor Div. Semiconductor Discrete Devices Development Dept. Joined shindengen in 1995

BAW* diode

Abstract: diode device data on semiconductor MGA881
Contextual Info: SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * TECHNICAL DATA BAW156LT1 DUAL SURFACE MOUNT SWITCHING DIODE Medium Switching Time Low Leakage Current Applications Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

Contextual Info: Philips Semiconductors Product specification Low-leakage double diode FEATURES BAV199 PINNING • P lastic S M D package PIN DESCRIPTION • Low leakage current: typ. 3 pA 1 anode • S w itching time: typ. 0.8 jos 2 cathode • C ontinuous reverse voltage:

6.5kV IGBT

Abstract: 6.5kV IGBT loss igbt 6.5kv igbt3 igbt2 infineon L280N A-9500 igbt2 infineon infineon igbt3 ohm HIGH VOLTAGE DIODE 3.3kv 3.3kv diode
Contextual Info: 6.5kV IGBT and FWD with Trench and VLD Technology for reduced Losses and high dynamic Ruggedness 1 2) 2) 3) 3) Thomas Duetemeyer , Josef-Georg Bauer , Elmar Falck , Carsten Schaeffer , G. Schmidt , 1) Burkhard Stemmer , 1 Infineon Technologies AG, Max-Planck-Straße 5, D-59581 Warstein Germany

S4 44 DIODE schottky

Contextual Info: r z T S G S -T H O M S O N ^ 7 # R fflD O œ m iiO irœ iD O i S T P S 40L 15CW LOW DROP OR-ing POWER SCHOTTKY RECTIFIERS M A JO R P R O D U C T S C H A R A C TE R ISTIC S Ip a v 2 *2 0 A V RRM 15 V V f (m a x ) 0.3 6 V Ai - A2 - F E A T U R E S A N D B E N E F IT S

AA SOD323

Abstract: RB461D 3.0A SCHOTTKY BARRIER DIODE TL06J RB461F RB491D RB551V-30 SC59 T146 portable pc battery
Contextual Info: nimm <3. SU8885& r 'ÏU l small j' w tm The best new products will join ROHM's "Super Low VF Series" T^Rohm is leading the indusiy by making the smallest 0.5A/30V diodes. These are most suitable for small and light applications. 1. SU P ER L O W VF 0.5A Package

EUPEC powerblock

Abstract: thyristor TT 46 N Thyristor eupec POWERBLOCK tt 25 n powerblock EUPEC tt 105 N 16 thyristor tt 500 n 16 thyristor tt 250 n 16 EUPEC POWERBLOCK TD thyristor eupec tt 251 n 14 powerblock tt 60 N
Contextual Info: . power the Home Products Bipolar News Contact N-Thyristor-Modules Editorials N-Diode-Modules Job Offers Company Search future Site Content Fast Thyristor Modules Fast Diode Modules the figures in the part-no. represent the current rating [A] Packages Packages

Contextual Info: " jo m . Super Fast Recovery Diode Twin Diode o u t l in e d im e n s io n s D5LC40 Case : ITO-220 400V 5A i a a •trr5 0 n s h' •S R « f • y v - K - o is mmm. oa. mm • i. m • Æ tè Ü rn fa R A T IN G S Absolute Maximum Ratings m w m Ratings

Eupec bsm 25 gb 120

Abstract: EUPEC Thyristor HIGH VOLTAGE THYRISTOR Thyristor PIN CONFIGURATION diode 1481 DISC THYRISTOR Transistor D 798 600V 100 A THYRISTOR 452 diode PHASE CONTROL THYRISTOR MODULE TD 56 N
Contextual Info: . power the Home Products Diode News Contact Editorials Job Offers VRRM max. 2400V Company Search Site Content VRRM max. 9000V the figures in the part-no. represent the current rating [A] . . . . . . . . . . . V RRM max. 800 V D 255 N D 255 K V RRM max. 1800 V

JIS Z 1522 tape

Abstract: sot-223 body marking A G Q E AN-994 IRFL210 TS10B
Contextual Info: PD-9.868 International jog Rectifier IRFL210 HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V R DS on = 1 - 5 0

SKiiP 33 NEC 125 To

Abstract: skiip 33 ups 063 skiip 32 ups 063 semikron skiip 33 nec skiip 85 UPS 06 skiip 33 nec 125 t semikron skiip 33 NEC 125 semikron skiip 32 ups 063 skiip 32 ups 06 SKIIP 33 UPS 06
Contextual Info: MiniSKiiP Technology
Pressure contact of all power and auxiliary connections instead of soldered joints.
Integration of latest chip technology: • • • • • • Low switching loss 1200 V, homogeneous NPT IGBTs with antiparallel CAL-diodes Low forward loss 600 V PT-IGBTs with antiparallel

Contextual Info: International jog Rectifier HEXFET Power MOSFET • • • • • • MB5545H DDISSTB S2D WMIUR PD-9.573B IRFPE50 INTERNATIO N AL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling

pda 03 d05

Abstract: RB081L20 Schottky Diode 20V 5A
Contextual Info: Low VF series small Schottky barrier diodes The best new products will join ROHM's "Super Low VF Series" Rohm is leading the indusry by making the smallest 0.5A/30V diodes. These are most suitable for small and light applications. HOW SMALL Package IO/VRM

IN4149

Abstract: cv8790 CV7040 Diode BAY 61 IS923 IN917 CV8617 texas is920 IS920 IN4448
Contextual Info: 1 Small Signal Diodes Explanation of Device Coding Devices prefixed " 1 N " are JGDEC Joint Electronic Device Engineering Council registered devices. These-type numbers are recognised in the USA. Devices prefixed "1 S " are Texas Instruments in-house numbers.

EUPEC T 691 S 30 thyristor

Abstract: T 308 THYRISTOR EUPEC T 1078 F T 468 THYRISTOR EUPEC Thyristor h 198 s Thyristor PIN CONFIGURATION T 481 thyristor EUPEC Thyristor asymmetric thyristor T675S
Contextual Info: . power the Home Products F-Thyristors News Contact Editorials Fast Thyristors V DRM,RRM max. 800 V T 72 F T 102 F . . T 178 F T 308 F T 698 F T 1078 F . Job Offers Company Search Site Content Fast Asymm. Thyristors the figures in the part-no. represent the current rating [A]

Contextual Info: SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA MMBD914LT1 HIGH-SPEED SWITCHING DIODE Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc

PSPICE thyristor

Abstract: SPICE thyristor model scr spice model sr 160 DIODE Equivalent list RS-397 W113 Semiconductor Group igbt thyristor spice THYRISTOR TBK7
Contextual Info: Electro-Thermal Modeling of Multi-Megawatt Power Electronic Applications Using PSPICETM John W. Motto Jr., William H. Karstaedt, Jerry M. Sherbondy Powerex Inc. Hillis Street Youngwood PA 15697 Abstract- Circuit modeling is an essential tool in the design of multi-megawati