DIODE SMD 5T Search Results

SMD diode color code

Abstract: SLSNNBS102TS Samsung Electro-Mechanics smd diode j smd transistor 501 MAX260 DIODE SMD 33 Samsung Electro-Mechanics led 25cycles COLOR CODE ON SMD DIODE
Contextual Info: Light Emitting Diode - SMD LED - Light Emitting Diode - SMD LED • INTRODUCTION A light-emitting diode LED is a semiconductor device that emits visible light when an electric current passes through it. Samsung is manufacturing several kinds of LEDs, specially focusing on

BA792

Abstract: top mark smd Philips Diode smd code 805 SMD MARKING 541 DIODE 279-27 smd diode marking kda marking code kda smd code marking 777 smd diode marking 77 S4 SMD diode mark
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BA792 Band-switching diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance:

SMD MARKING 541 DIODE

Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF

Zener diode smd marking 5j

Abstract: MM5Z3V9 smd zener diode code 5F
Contextual Info: Formosa MS SMD Zener Diode MM5Z2V4 THRU MM5Z75V List List. 1 Package outline. 2 Features. 2

MR1020

Abstract: I2C00 marking JB SCHOTTKY BARRIER DIODE MARKING FY DF25SC6M marking JB diode SHINDENGEN DIODE
Contextual Info: Schottky Barrier Diode Twin Diode mnm DF25SC6M o u tlin e 60V 25A Feature • SMD • SMD • PRRSM • P rrsm Rating • /jv s fc fc œ s s » • High lo Rating-Small-RKG Main Use • • • • Switching Regulator DC/DC Converter Home Appliance, Game, Office Automation

smd Marking OU

Abstract: B05S-G B05S smd marking NE B10S B10SG
Contextual Info: COMCHIP SMD General Purpose Bridge Rectifier Diode SMD Diodes Specialist B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features TO269AA MiniDIP -Rating to 1000V PRV. -Ideal for printed circuit board. 0.193 (4.90)

20sc9m

Abstract: marking JB diode DF20S marking JB SCHOTTKY BARRIER DIODE smd marking 5G DF20SC9M jb smd smd diode marking wr 05 TCI diode SHINDENGEN DIODE
Contextual Info: Schottky Barrier Diode Twin Diode mnm DF20SC9M o u tlin e 90V 20A Feature • SMD • SMD • PRRSM • P rrsm Rating • / jv s f c f c œ s s » • High lo Rating-Small-RKG • D C /D C • Switching Regulator • DC/DC Converter Main Use • m m . y - h . O A m ss

Contextual Info: COMCHIP SMD General Purpose Bridge Rectifier Diode SMD Diodes Specialist B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features MBS -Rating to 1000V PRV. -Ideal for printed circuit board. 0.031 0.80 0.019 (0.50)

smd diode marking JC

Abstract: DIODE BJE DIODE BJE smd marking JC diode df30sc3 smd marking 5G DF30SC3ML hm marking smd DIODE SHINDENGEN DIODE sto220
Contextual Info: Schottky Barrier Diode Twin Diode m n m DF30SC3ML o u tlin e Unit I mm Weight 1.5« Typ Package ! STO-220 0 7h£9(M ) 30V 30A Feature • SMD • SMD 0 45 V • < S V f= . • P rrsm 0 45V • Low V f= . 7 ’K 3 > î / x (S K î Polarity • P r r s m R a t in g

general purpose bridge rectifier

Abstract: comchip rectifier bridge low smd diode bridge
Contextual Info: COMCHIP SMD General Purpose Bridge Rectifier Diode SMD Diodes Specialist B05S-HF Thru B10S-HF Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Halogen Free MBS Features -Rating to 1000V PRV. 0.031 0.80 0.019 (0.50) -Ideal for printed circuit board.

Contextual Info: COMCHIP SMD Gen er al Purpose Bridge Rect ifier Diode SMD Diodes Specialist B01S-G B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features TO269AA MiniDIP -Rating to 1000V PRV. -Ideal for printed circuit board. 0.193 (4.90)

diode 429 IK

Contextual Info: □ - □ 3 . V 'C X - Y Super Fast Recovery Diode Twin Diode mn?â Surface Mount OUTLINE DIMENSIONS DF20LC20U Unit • mm Package I STO-220 10 9 ± -9- 200V 20A >SMD m s 'i'x > trr35n s >SRSÜ > D C /D C ® > 7 5 ^ * -f-J b 2 @ (D >^BsOAw0,^ K H s . FA

1PS181

Abstract: smd diode code 1_b marking code diode Eb SMD SC59
Contextual Info: Philips Semiconductors Product specification High-speed double diode 1PS181 FEATURES DESCRIPTION • Small plastic SMD package The 1PS181 consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in the

Contextual Info: Schottky Barrier Diode Single Diode D1FS4 Weight 0.0f>8tf Typ 40V 1.1A 'Cathode mark Feature • /JvguSMD • P rrsm 7V C 5 i fitBE 1 I • Small SMD • P r r s m Rating Main Use • • • • • D C /D C n y /i—? • * « . y - A . OAfiSSI U nit: mm

50N60

Abstract: 50N6
Contextual Info: IGBT with Diode vCES IXSX50N60AU1 IXSX50N60AU1S ^C25 v* CE sat PLUS 247 package Short Circuit SOA Capability PLUS 247™ SMD (50N60AU1S) Preliminary data ¿ Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V VC0B Tj = 25°C to 150°C; R ^ = 1 M£2

1PS226

Abstract: PS226 SC59 SMD MARKING CODE M 4 Diode MARKING CODE c3t high speed double diode
Contextual Info: W AMER PHILIPS/DISCRETE bTE D m bbSBTBl 00E71D? 5TÔ B 1 A P X P relim in ary sp e c ific atio n P hilips S e m ic o n d u c to rs H igh sp eed d o u b le d io d e FEATURES 1P S 226 QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode

Contextual Info: APPROVAL SHEET AOT MODEL NAME AOT PART NUMBER CUSTOMER NAME DATE VERSION MAKER Prepared SMD LED, RGB AOT-1206-3D-RGB03-Z General Customer 2005/June 1 CUSTOMER Checked Approved AOT HEAD QUARTER No. 13, Gongye 5th. Road, Hsinchu Industrial Park, Hukou Shiang,

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK10G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK10G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK06G65C5 Final Data Sheet Rev. 2.0, 2012-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK06G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK09G65C5 Final Datasheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK09G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK08G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK08G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

D0465C5

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK04G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK04G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK02G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK02G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK03G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK03G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC