DIODE SG 55 Search Results

marking sg

Abstract: diode SOD-323 SD107WS SG DIODE MARKING
Contextual Info: SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance 1.30 · ·

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features ０．８５ 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 SD107WS FAST SWITCHING DIODES + FEATURES z Low turn-on voltage z Fast switching - MARKING: SG Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG 30TC 15M 150V 30A Feature • Tj=150°C • T j= i5 r c • High lo Rating • 7 / iæ - ju ^ • lR = 4 0 p A • Full Molded • Low Ir=40(jA • *& « £ « & : u c < u • Resistance fo r thermal run-away

CB417

Abstract: smd diode Coloured band marked devices Smd code S08 CB429 DIL20 F126 S020 T0220AB SOD-6 DIMENSIONS CB417
Contextual Info: LVT3V3 SMLVT3V3 / = T SG S-THO M SO N * * œ ^ M 0 M ( § s TRANSIL FEATURES • ■ ■ ■ ■ UNDIRECTIONAL TRANSIL DIODE. PEAK PULSE POWER= 600 W @ 1ms. REVERSE STAND OFF VOLTAGE = 3.3 V. LOW CLAMPING FACTOR. FAST RESPONSE TIME: Tclamping : 1ps (0 V to VBR -

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG 20TC1OM 100V 20A Feature • • • • • • T j= i5 r c • 7 J IÆ -J U K • (S lR = 3 0 p A • j r iiìè s b c u c < u •« » W Œ 2 k V S S I Tj=150°C Full Molded Low lR=30pA Resistance for thermal run-away

FTO-220G

Abstract: J533 J533-1
Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG 40 T C 1 2 M U n it : m m Package I FTO-220G Weight J.54g Typ o v h i j y iw ! ) 120V 40A 4.5 Feature • T j=175°C • T j= 1 7 S f C • y jis t- ib • Full M olded K • I r=60^A • Low lR=60pA • * W I Æ ® e ï: U C C IA

73b21

Contextual Info: r Z Z SG S -T H O M S O N • 7 f raooasiiLiieTr^omies S T T B 8 0 6 D l TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av) 8A V rrm 600V t r (typ) 50ns Vf (max) 1.3 V k- w - V FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­

p-MOSFET soft start 60v

Abstract: LX1912 LX1912CSG p-MOSFET soft start 70v
Contextual Info: LX1912 VREF @ 800mV, 1.0A, 1.2MHz PWM TM P RODUCTION D ATA ƒ Internal Reference 800mv ±2% Accuracy Line and Temp. ƒ 4.0V to 6.0V Input Range ƒ Internal Soft Start ƒ Adj. Output From 0.8V to 90% of VIN ƒ Output Current up to 1.0A ƒ Quiescent Current < 550 A,

Contextual Info: LX1912 VREF @ 800mV, 1.0A, 1.2MHz PWM TM P RODUCTION D ATA ̇ Internal Reference 800mv ±2% Accuracy Line and Temp. ̇ 4.0V to 6.0V Input Range ̇ Internal Soft Start ̇ Adj. Output From 0.8V to 90% of VIN ̇ Output Current up to 1.0A ̇ Quiescent Current < 550 A,

SG DIODE

Abstract: diode sg-64 diode sg 71
Contextual Info: W83773G/SG W83773G / W83773SG Nuvoton H/W Monitoring IC DATE: OCTOBER 21TH, 2009 REVISION: 1.2 -I- W83773G/SG TABLE OF CONTENTS- 1. GENERAL DESCRIPTION . 1

semikron skiip 31 nab 12

Abstract: semikron skiip 32 nab 12 SEMIKRON SKIIP 20 NAB 12 T 17 semikron skiip 31 Semikron skiip 31 nab 12 T 16 semikron skiip 31 nab 125 t 12 skiip 31 nab 125 t 12 Semikron skiip 31 nab Semikron skiip 31 nab 12 T 10 semikron skiip nab
Contextual Info: se MIKROn SKiiP 31 NAB GB Absolute Maximum Ratings Symbol Conditions 1 Values Units Theatsink = 25 I SG oC tp < 1 ms; Theatsink = 25 I SG C Theatsink = 25 I SG oC tp < 1 ms; Theatsink = 25 I SG C 6GG ± 2G 5G I 35 1GG I 7G 57 I 3S 114 I 76 V V A A A A SGG

SG2074W

Abstract: SG2077W DTL 935 PC 2077R 2066 SG2065W SG2067 ULN-2077B sg2075w BJ SMD IC
Contextual Info: SG2064 THRU SG2077 5 IL IC D N GENERAL QUAD 1.5 AMP DARLINGTON SWITCHES L IN E A R IN T E G R A T E D C IR C U IT S D ESC R IP TIO N FEATURES T h ese high-voltage, high-current Darlington arrays are monolithic bipolar devices especially designed for interfacing low-level control logic and peripheral loads

diode sg 64

Abstract: SG5774AJ SG5772J SG25768 sf 819 d 1N5772 JANTX 1N5768 SG25770J
Contextual Info: , SG5768/68A SG5770/70A, SG5772/72A, SG5774/74A SG25768, SG25770, SG6496/96A DIODE ARRAY CIRCUITS SILICON GENERAL LINEAR IN TEGRATED CIRCUITS DESCRIPTION FEATURES The Silicon General series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.

sx3704

Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
Contextual Info: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are

Contextual Info: r s T ^7 S G S - T H O M S O N # ffifli g®@[iiL[i(Sir®@oaD(gi R C D 1 6 -4 7 B R-C-D TERMINATOR NETWORKS FEATURES O Network of 16 R-C-D line terminators. □ Termination without DC current consumption. □ Integrated diode to clamp undershoot. □ Monolithic device for greater reliability.

3015-6

Abstract: 47B diode 74LS RCD16-47B S020 47B marking
Contextual Info: I SGS-THOMSON RCD16-47B GilDlgtftiOtiLIgTOOKlKgi R-C-D TERM INATO R NETW ORKS T A R G E T S P E C IF IC A T IO N FEATURES □ Network of 16 R-C-D line terminators. □ Termination without DC current consumption. □ Integrated diode to clamp undershoot.

TCA 2025 b

Abstract: transistor v63 TCA 2025 STH4N90 STH4N90FI 0C183
Contextual Info: Zu SGS-THOMSON S TH 4 N90 S TH 4 N9 0 FI « M L Iig T T IM O tS S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V STH4N90 STH4N90F! dss 900 V 900 V R DS on Id < 3.2 Q < 3.2 Q 4.2 A 2.7 A . TYPICAL RDS(on) = 2.9 Q . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED

48v 2500w

Abstract: PD78F0511GA-8EU-A PD78F0511GA-8EU multi output switch mode transformer for stb FH02500
Contextual Info: 48V 2500W POWER SUPPLY SPECIFICATION REVISION HISTORY REV. EC NO. A 0 0 DESCRIPTION INITIAL RELEASE RESP.ENG DATE NORI MIURA 2/5/2010 Hot-Swap / Redundant Front End Power Supply 2500 WATTS @ 200-240VAC, 1200W@100-120VAC, 47-63 HZ OUTPUT: +48V @ 52A High Line , 25A (Low Line) , +12.5 V STB @ 2.0 A

DC24V-48V

Abstract: SPB05-1R0 SPB05-2R0 SPB12-R40 SPB12-R80 SPB24-R20 DC24V REMOTE RV-1
Contextual Info: 1/8 001-02 / 20030510 / ea224_spb.fm Power Supplies DC Input Single Output, General-Purpose The S series SPB products are wide-input super-thin type (9mm max.) available for the 24V and 48V types. The super-thin and ultra-light design has been realized by means of a high-density

diode sy 200

Contextual Info: 10mm BAYONET BASED LED LAMPS l/ : ^ ^ K KingDrignt ir w ir n + BLB101 SERIES Features Package Dimensions I BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT, i LONGLIFE. i LOW CURRENT, POWERSAVINGS. i LOW MAINTENANCE, i DIFFERENTCOLORAVAILABLE.

SPB12-R80

Abstract: SPB05-2R0 SPB05-1R0 1R0 choke A224 SPB12-R40 SPB24-R20 diode sg 69
Contextual Info: A224_SPB 1/8 TDK Switching Power Supply Super-thin type DC.24 to 48V wide input power supply S SERIES SPB [FEATURES] • Wide-input (DC.20 to 56V) super-thin type single-output power supply. • Plastic package, onboard type. • Ultra-light. • Input-output floating.

diode sg 27

Abstract: SG DIODE TA84007FG TA84007PQ TA84007SG SG 27 surge current VU48
Contextual Info: TA84007PQ/SG/FG Preliminary TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA84007PQ,TA84007SG,TA84007FG DC Motor Full Bridge Driver ICs Forward/reverse switching driver ICs The TA84007PQ, TA84007SG and TA84007FG are bridge driver ICs designed for forward/reverse rotation switching and that are