DIODE SG 55 Search Results

marking sg

Abstract: diode SOD-323 SD107WS SG DIODE MARKING
Contextual Info: SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance 1.30 · ·

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features ０．８５ 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 SD107WS FAST SWITCHING DIODES + FEATURES z Low turn-on voltage z Fast switching - MARKING: SG Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG 30TC 15M 150V 30A Feature • Tj=150°C • T j= i5 r c • High lo Rating • 7 / iæ - ju ^ • lR = 4 0 p A • Full Molded • Low Ir=40(jA • *& « £ « & : u c < u • Resistance fo r thermal run-away

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG 20TC1OM 100V 20A Feature • • • • • • T j= i5 r c • 7 J IÆ -J U K • (S lR = 3 0 p A • j r iiìè s b c u c < u •« » W Œ 2 k V S S I Tj=150°C Full Molded Low lR=30pA Resistance for thermal run-away

FTO-220G

Abstract: J533 J533-1
Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG 40 T C 1 2 M U n it : m m Package I FTO-220G Weight J.54g Typ o v h i j y iw ! ) 120V 40A 4.5 Feature • T j=175°C • T j= 1 7 S f C • y jis t- ib • Full M olded K • I r=60^A • Low lR=60pA • * W I Æ ® e ï: U C C IA

73b21

Contextual Info: r Z Z SG S -T H O M S O N • 7 f raooasiiLiieTr^omies S T T B 8 0 6 D l TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av) 8A V rrm 600V t r (typ) 50ns Vf (max) 1.3 V k- w - V FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­

p-MOSFET soft start 60v

Abstract: LX1912 LX1912CSG p-MOSFET soft start 70v
Contextual Info: LX1912 VREF @ 800mV, 1.0A, 1.2MHz PWM TM P RODUCTION D ATA ƒ Internal Reference 800mv ±2% Accuracy Line and Temp. ƒ 4.0V to 6.0V Input Range ƒ Internal Soft Start ƒ Adj. Output From 0.8V to 90% of VIN ƒ Output Current up to 1.0A ƒ Quiescent Current < 550 A,

SG DIODE

Abstract: diode sg-64 diode sg 71
Contextual Info: W83773G/SG W83773G / W83773SG Nuvoton H/W Monitoring IC DATE: OCTOBER 21TH, 2009 REVISION: 1.2 -I- W83773G/SG TABLE OF CONTENTS- 1. GENERAL DESCRIPTION . 1

diode sg 64

Abstract: SG5774AJ SG5772J SG25768 sf 819 d 1N5772 JANTX 1N5768 SG25770J
Contextual Info: , SG5768/68A SG5770/70A, SG5772/72A, SG5774/74A SG25768, SG25770, SG6496/96A DIODE ARRAY CIRCUITS SILICON GENERAL LINEAR IN TEGRATED CIRCUITS DESCRIPTION FEATURES The Silicon General series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.

Contextual Info: r s T ^7 S G S - T H O M S O N # ffifli g®@[iiL[i(Sir®@oaD(gi R C D 1 6 -4 7 B R-C-D TERMINATOR NETWORKS FEATURES O Network of 16 R-C-D line terminators. □ Termination without DC current consumption. □ Integrated diode to clamp undershoot. □ Monolithic device for greater reliability.

DC24V-48V

Abstract: SPB05-1R0 SPB05-2R0 SPB12-R40 SPB12-R80 SPB24-R20 DC24V REMOTE RV-1
Contextual Info: 1/8 001-02 / 20030510 / ea224_spb.fm Power Supplies DC Input Single Output, General-Purpose The S series SPB products are wide-input super-thin type (9mm max.) available for the 24V and 48V types. The super-thin and ultra-light design has been realized by means of a high-density

TA84007PQ

Contextual Info: TA84007PQ/SG/FG Preliminary TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA84007PQ,TA84007SG,TA84007FG DC Motor Full Bridge Driver ICs Forward/reverse switching driver ICs The TA84007PQ, TA84007SG and TA84007FG are bridge driver ICs designed for forward/reverse rotation switching and that are

Contextual Info: SGM2021 Low Power, Low Dropout, Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2021 series low-power, low-noise, low-dropout, y Low Output Noise CMOS linear voltage regulators operate from a 2.5V to y Low Dropout Voltage 5.5V input voltage. They are the perfect choice for low

SG DIODE

Contextual Info: TA8409S/SG, F/FG TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8409S/SG, TA8409F/FG Bridge Driver TA8409S/SG and TA8409F/FG are bridge driver with output voltage control. TA8409S/SG Features Modes available CW/CCW/STOP/BRAKE Output current up to 0.4 A (AVE) and 1.0 A (PEAK)

Contextual Info: TA8409S/SG, F/FG TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8409S/SG, TA8409F/FG Bridge Driver The TA8409S/SG and TA8409F/FG are bridge drivers with output voltage control. TA8409S/SG Features z Modes available CW/CCW/STOP/BRAKE z Output current up to 0.4 A (AVE) and 1.0 A (PEAK)

SG DIODE

Abstract: SSOP10 Package SSOP10 diode sg 45 AG-05
Contextual Info: TA8409S/SG, F/FG TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8409S/SG, TA8409F/FG Bridge Driver The TA8409S/SG and TA8409F/FG are bridge drivers with output voltage control. TA8409S/SG Features z Modes available CW/CCW/STOP/BRAKE z Output current up to 0.4 A (AVE) and 1.0 A (PEAK)

Contextual Info: TA7291P/S/SG/F/FG TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA7291P, TA7291S/SG, TA7291F/FG BRIDGE DRIVER The TA7291P / S/SG / F/FG are bridge drivers with output voltage control. FEATURES z Four modes available CW / CCW / STOP / BRAKE

Contextual Info: TA8409S/SG, F/FG TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8409S/SG, TA8409F/FG Bridge Driver TA8409S/SG and TA8409F/FG are bridge driver with output voltage control. TA8409S/SG Features Modes available CW/CCW/STOP/BRAKE Output current up to 0.4 A (AVE) and 1.0 A (PEAK)

PA0806.004NL

Abstract: 18V75V BSC057N08NS3 PA2008 LTC3766GN
Contextual Info: LTC3766 High Efficiency, Secondary-Side Synchronous Forward Controller Description Features Direct Flux Limit Guarantees No Saturation Fast and Accurate Average Current Limit n Clean Start-Up Into Pre-Biased Output n Secondary-Side Control for Fast Transient Response

SG600EX21

Abstract: SG800EX21 SG600EX SGK600
Contextual Info: GATE TURN-OFF THYRISTOR SILICON DIFFUSED TYPE SGK600,800 EX21 Unit in mm CHOPPER, INVERTER APPLICATION F EATURES: 2 — 05.2 ± 0.2 DE EP 2 . 0 i . 0.4 . Repetitive Peak Off-State Voltage V d r m = 2500V . Repetitive Peak Reverse Voltage V r RM=1250V . R.M.S On-State Current

Y525

Abstract: Y528 BZM55B5V6 SGM2005 DFN-6
Contextual Info: SGM2005 Low Power, Low Dropout, 150mA, RF - Linear Regulators GENERAL DESCRIPTION The SGM2005 series low-power, low-noise, low-dropout, CMOS linear voltage regulators operate from a 2.5V to 5.5V input and deliver up to 150mA. They are the perfect choice for low voltage, low power applications. An ultra

Contextual Info: LTC3766 High Efficiency, Secondary-Side Synchronous Forward Controller DESCRIPTION FEATURES n n n n n n n n n n n n n Direct Flux Limit Guarantees No Saturation Fast and Accurate Average Current Limit Clean Start-Up Into Pre-Biased Output Secondary-Side Control for Fast Transient Response