DIODE S1 85 Search Results

sfp transceiver

Contextual Info: PT1-S1-4203L www.palconnusa.com Product Overview The PT1-S1-4203L of Small Form Factor Pluggable SFP transceiver module is specifically designed for high performance integrated duplex data link over single mode optical fiber. The high-speed laser diode and photo diode are provided as a light

S1 SOD-323

Abstract: SDS511 ultra fast 80V 100ma SOD323
Contextual Info: SDS511 Semiconductor Switching Diode Features • • • • Ultra high speed switching application Low forward voltage Fast reverse recovery time Small total capacitance Ordering Information Type No. SDS511 Marking Package Code S1 SOD-323 unit : mm 1.25±0.1

Contextual Info: APTC80AM75SCG Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module OUT Features • - S1 Q2 G2 S2 0/VBUS  Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF

Contextual Info: SPST SWITCHES Advanced c o n tro l C o m m o n «« The S1 series of single pole, single throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of

Contextual Info: SPST SWITCHES Advanced Control Components The S1 series of single pole, single throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible

Diode smd s6 68

Abstract: S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

SKiiP 83 AC 12 i t 1

Abstract: SKiiP 83 AC 12 i t semikron skiip 83 83AC12 SKiiP 83 AC 12 SKIIP 83 AC 12 T 12 SKiiP 83 AC 12 i t 2 SKiiP 82 AC 12 i t 1 ct3 "current sensor" SKIIP
Contextual Info: SKiiP 83 AC 12 - SKiiP 83 AC 12 I Absolute Maximum Ratings Symbol VCES VGES IC ICM Tj Tstg Visol Conditions 1 Values 1200 ± 20 125 / 85 250 / 170 – 40 . . . + 150 – 40 . . . + 125 2500 Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C AC, 1 min.

Contextual Info: STG4160 Low voltage 0.5 Ω single SPDT switch with break-before-make feature and 15 kV contact ESD protection Features • Wide operating voltage range: VCC opr = 1.65 to 4.8 V ■ Low power dissipation: ICC = 0.2 µA (max.) at TA = 85 °C ■ Low "ON" resistance:

PD10M441H

Contextual Info: MOSFET 85A 450~500 V PD10M441H PD10M440H P2H10M441H P2H10M440H •回路図 CIRCUIT PD P2H Rg Rg MOS SBD FRD 1 D2S1 2 SBD D1 MOS G2 S2 MOS SBD 3 S2 FRD FRD S1 S2 D1 SBD MOS D2 FRD S1 G1 G2 S2 S1 G1 Rg Rg ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm）

A115-A

Abstract: C101 JESD22 JESD97 STG3159 STG3159DTR
Contextual Info: STG3159 Low voltage 1Ω max single SPDT switch with break-before-make feature Features • High speed: – tPD = 1.5ns Typ. at VCC = 3.0V – tPD = 1.5ns (Typ.) at VCC = 2.3V ■ Ultra low power dissipation: – ICC = 0.2µA (Max.) at TA = 85°C ■ Low "ON" resistance:

A115-A

Abstract: C101 IEC-61000-4-2 JESD22 JESD97 STG4159 STG4159BJR
Contextual Info: STG4159 Low voltage 0.3Ω max single SPDT switch with break-before-make feature and 10kV contact ESD protection Features • Wide operating voltage range: VCC OPR = 1.65V to 4.8V ■ Low power dissipation: ICC = 0.2µA (max.) at TA = 85°C ■ Low "ON" resistance VIN = 0V:

A115-A

Abstract: C101 IEC-61000-4-2 JESD22 STG4159 STG4159BJR
Contextual Info: STG4159 Low voltage 0.3 Ω max single SPDT switch with break-before-make feature and 10 kV contact ESD protection Features • Wide operating voltage range: VCC opr = 1.65 V to 4.8 V ■ Low power dissipation: ICC = 0.2 µA (max.) at TA = 85 °C ■ Low “ON” resistance VIN = 0 V:

STG3157

Abstract: tecnology of control STG3157CTR
Contextual Info: STG3157 LOW VOLTAGE LOW ON RESISTANCE SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE • ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 0.3ns MAX. at VCC = 4.5V tPD = 0.8ns (MAX.) at VCC = 3.0V tPD = 1.2ns (MAX.) at VCC = 2.3V VERY LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=85°C

Contextual Info: STG4159 Low-voltage 0.3 Ω max. single SPDT switch with break-before-make feature and 10 kV contact ESD protection Datasheet − production data Features • Wide operating voltage range: VCC opr. = 1.65 to 4.8 V ■ Low power dissipation: ICC = 0.2 µA (max.) at TA = 85 °C

Contextual Info: STG4159 Low voltage 0.3 Ω max single SPDT switch with break-before-make feature and 10 kV contact ESD protection Features • Wide operating voltage range: VCC opr = 1.65 V to 4.8 V ■ Low power dissipation: ICC = 0.2 µA (max.) at TA = 85 °C ■ Low “ON” resistance VIN = 0 V:

Contextual Info: STG5683 Low voltage dual SPDTswitch with negative rail capability Features • Distortion-free negative signal throughput down to VCC-5.5V ■ Wide operating voltage range: VCC Opr = 1.65V to 4.5V single supply ■ Ultra low power dissipation: ICC = 0.2µA (Max.) at tA = 85°C

Contextual Info: STV7617, STV7617D, STV7617U PLASMA DISPLAY PANEL SCAN DRIVER FEATURE • ■ ■ ■ ■ ■ ■ ■ ■ 64/65 SELECTABLE OUTPUT PLASMA DISPLAY DRIVER 100 V ABSOLUTE MAXIMUM SUPPLY 5 V SUPPLY FOR LOGIC 100/850 mA SOURCE/SINK OUTPUT 700 mA SOURCE/SINK OUTPUT DIODE

STG3684ADTR

Abstract: JESD97 STG3684A STG3684AUTR
Contextual Info: STG3684A Low voltage 0.5 Ω max dual SPDT switch with break-before-make Features • Ultra low power dissipation: ICC = 0.2 mA max. at TA = 85°C ■ Low ON resistance VIN = 0 V: – RON = 0.45 Ω (max. TA = 25°C) at VCC = 4.3 V – RON = 0.50 Ω (max. TA = 25°C) at

Contextual Info: STG719  LOW VOLTAGE 4Ω SPDT SWITCH PRELIMINARY DATA • ■ ■ ■ HIGH SPEED: tPD = 0.1 ns TYP. at VCC = 5V tPD = 0.4 ns (TYP.) at VCC = 3.3V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 85 oC LOW ”ON” RESISTANCE: RON = 4Ω (MAX.) AT VCC = 5V

STG719

Abstract: STG719STR
Contextual Info: STG719  LOW VOLTAGE 4Ω SPDT SWITCH • ■ ■ ■ HIGH SPEED: tPD = 0.3 ns TYP. at VCC = 5V tPD = 0.4 ns (TYP.) at VCC = 3.0V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 85 oC LOW ”ON” RESISTANCE: RON = 4Ω (MAX. Ta=25oC) AT VCC = 5V RON = 6Ω (TYP.) AT VCC = 3.0V

STG3682qtr

Abstract: JESD22 JESD97 QFN10 STG3682
Contextual Info: STG3682 Low voltage high bandwidth dual SPDT switch Features • Ultra low power dissipation: – ICC = 0.2µA Max. at TA = 85°C ■ Low “ON” resistance: – RON = 4.6Ω (TA = 25°C) at VCC = 4.3V – RON = 5.8Ω (TA = 25°C) at VCC = 3.0V ■ Wide operating voltage range:

STG719

Abstract: STG719FTR
Contextual Info: STG719  LOW VOLTAGE 4Ω SPDT SWITCH • ■ ■ ■ HIGH SPEED: tPD = 0.3 ns TYP. at VCC = 5V tPD = 0.4 ns (TYP.) at VCC = 3.0V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 85 oC LOW ”ON” RESISTANCE: RON = 4Ω (MAX. Ta=25oC) AT VCC = 5V RON = 6Ω (TYP.) AT VCC = 3.0V

Contextual Info: Na l i o n al s e m i c o n d u i- t o r S e p te m b e r 1 9 9 6 ADVANC E IN FO R M A TIO N N D H 8507N Dual N-Channel Enhancement Mode Field Effect Transistor Features General Description SuperS0T™-8 N-Channel enhancement mode power field effect transistors are produced using

PDF PIN PHOTO DIODE DESCRIPTION

Abstract: tda8808 TDA8808AT TDA8808T GCLF PHOTO diode
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA8808T TDA8808AT Photo diode signal processor for compact disc players Product specification File under Integrated Circuits, IC01 November 1987 Philips Semiconductors Product specification Photo diode signal processor for compact disc players