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Catalog Datasheet	Type	Document Tags	PDF
s2dg1 Contextual Info: CEG8304 Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -3.6A, RDS ON = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability.	Original	CEG8304 s2dg1	PDF

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s2dg1

Contextual Info: CEG8304 Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -3.6A, RDS ON = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability.

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CEG8304 s2dg1

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