PD10M441H Search Results

PD10M441H

Contextual Info: MOSFET 85A 450~500 V PD10M441H PD10M440H P2H10M441H P2H10M440H •回路図 CIRCUIT PD P2H Rg Rg MOS SBD FRD 1 D2S1 2 SBD D1 MOS G2 S2 MOS SBD 3 S2 FRD FRD S1 S2 D1 SBD MOS D2 FRD S1 G1 G2 S2 S1 G1 Rg Rg ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm）

Contextual Info: MOSFET MODULE PD10M441H / PD10M440H Dual 85A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible

Contextual Info: MOSFET 85A 450 500V 1 PD10M441H P2H10M441H PD10M440H

ID40A

Contextual Info: MOSFET 85A 450~500 V PD10M441H PD10M440H P2H10M441H P2H10M440H •回路図 CIRCUIT PD P2H Rg Rg MOS SBD FRD 1 D2S1 2 SBD D1 MOS G2 S2 MOS SBD 3 S2 FRD FRD S1 S2 D1 SBD MOS D2 FRD S1 G1 G2 S2 S1 G1 Rg Rg ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm）

IR 440H

Contextual Info: MOSFET 85A 450～ 450～500V PD10M441H/440H PD10M441H PD10M440H P2H10M441H P2H10M440H P2H10M441H/440H 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage

Contextual Info: MOSFET 85A 450~500 V PD10M441H PD10M440H P2H10M441H P2H10M440H •回路図 CIRCUIT PD P2H Rg Rg MOS SBD FRD 1 D2S1 2 SBD D1 MOS G2 S2 MOS SBD 3 S2 FRD FRD S1 S2 D1 SBD MOS D2 FRD S1 G1 G2 S2 S1 G1 Rg Rg ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm）

441H

Abstract: PD10M440H PD10M441H
Contextual Info: MOSFET MODULE PD10M441H / PD10M440H Dual 85A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by 108.0 SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible

IR 440H

Abstract: P2H10M441H PD10M440H 441H P2H10M440H PD10M441H 20a04
Contextual Info: MOSFET 85A 450～ 450～500V PD10M441H/440H PD10M441H PD10M440H P2H10M441H P2H10M440H P2H10M441H/440H 108.0 108.0 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧

Contextual Info: MOSFET 85A 450～ 450～500V PD10M441H/440H PD10M441H PD10M440H P2H10M441H P2H10M440H P2H10M441H/440H 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage

Contextual Info: MOSFET MODULE PD10M441H / PD10M440H Dual 85A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible

PF0012

Abstract: Pch MOS FET
Contextual Info: - 160 - S £ P2H10M441H P2H10M441L P2H4M440H P2H4M440L tt € m & B*W B*W B b* w - « â f t ? 1 » H V JR X [m * vos* l » * (V) fë £ 3 P d /P c h (A) * * m MOS N 450 DSS 85 D 230 MOS N 450 DSS 70 D 230 MOS N 500 DSS 30 D 230 MOS N 500 DSS 30 D 230

PT76S16

Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Contextual Info: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

508RP

Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Contextual Info: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

PDM5001

Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Contextual Info: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH