DIODE RF 302 Search Results

Contextual Info: Attenuators • Fixed and Digital • GaAs, PIN Diode, & Schottky Diode Technology • RF Relay • Thin Film MIC Technology • Solid State Connectorized • 1 Bit Through 7 Bit Attenuators wtih 0.1 dB LSB’s Through 63.5 dB Range • Full Military Screening Available

Contextual Info: Attenuators • Fixed and Digital • GaAs, PIN Diode, & Schottky Diode Technology • RF Relay • Thin Film MIC Technology 138 • Solid State Connectorized • 1 Bit Through 8 Bit Attenuators wtih 0.1 dB LSB’s Through 127 dB Range • Full Military Screening Available

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

Contextual Info: MPS-302201-87 100 to 3000 MHz Variable Gain Amplifier Email: info@mwtinc.com www.mwtinc.com Features High IP3 +35 dBm Typcal Variable Gain High P1dB +22 dBm Typical 30% High Power Added Efficiency +5 Volt Bias The MPS-302201-87 is an internally matched GaAs FET amplifier in a gold/

MA87937

Abstract: 10 GHz gunn diode Gunn oscillator GaAs x band gunn diode
Contextual Info: Varactor Controlled Oscillator 21.15 - 23.63 GHz MA87937 V3.00 Features ● ● ● ● ● ● 0.670 MOLEX 22-01-3027 0.335 Broadband Electronic Tuning Allows for Center Frequency Setting to Done Electronically, Alleviating the Need for “On Site” Mechanical Adjustments.

Contextual Info: MPS-302201-87 100 to 3000 MHz Variable Gain Amplifier Email: info@mwtinc.com www.mwtinc.com Features High IP3 +35 dBm Typcal Variable Gain High P1dB +22 dBm Typical 30% High Power Added Efficiency +5 Volt Bias The MPS-302201-87 is an internally matched GaAs FET amplifier in a gold/

MPS-302201-87

Abstract: variable capacitor MPS302
Contextual Info: MPS-302201-87 100 to 3000 MHz Variable Gain Amplifier Email: info@mwtinc.com www.mwtinc.com Features High IP3 +35 dBm Typcal Variable Gain High P1dB +22 dBm Typical 30% High Power Added Efficiency +5 Volt Bias The MPS-302201-87 is an internally matched GaAs FET amplifier in a gold/

Contextual Info: Si i PRELIMINARY MPS-302201 -87 r r 100 TO 3000 MHz GaAs FET AMPLIFIER kJ. MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 F A X 510-651-2208 FEATURES I MPS302201-87 • +34 dBm TYPICAL IP3 0.0151 TYP. 0.18- SQ. RF IN I RF OUT • +22 dBm TYPICAL P1dB

AN302

Abstract: IN4003 IN4003 diode Variable resistor 10K ohm
Contextual Info: LSI/CSI UL AP P LI CATI ON NOTE 302 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 631 271-0400 FAX (631) 271-0405 A3800 HEAVY DUTY AC POWER CONTROL WITH AUTOMATIC VARIABLE TIMED OPERATION AND OVERLOAD SHUTDOWN December 1996 A method is described herein for simple electronic control of large current inductive loads

diode in4003

Abstract: IN4003 IN4003 diode cmos ic 4001 cmos ic cd4001 data sheet CD4001 cmos ic cd4001 BE Variable resistor 10K ohm ic cd4001 datasheet cd4001 applications
Contextual Info: LSI/CSI UL AP P LI CATI ON NOTE 302 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 631 271-0400 FAX (631) 271-0405 A3800 HEAVY DUTY AC POWER CONTROL WITH AUTOMATIC VARIABLE TIMED OPERATION AND OVERLOAD SHUTDOWN December 1996 A method is described herein for simple electronic control of large current inductive loads

Contextual Info: MPS-302201-84 jVtW J lO litS O lO i l l i t r i i l l * lain inpilffior Email: info@mwtinc.com www.mwtinc.com B M flN M # • High IP3 +35 dBm Typcal Variable Gain • High PldB +22 dBm Typical 30% High Power Added Efficiency • +5 Volt Bias The MPS-302201-84 is an internally matched GaAs FET ampiifier in a gold/

diagram for test ic 8873

Abstract: Stereo Power Amplifier Circuit Diagram LA4183
Contextual Info: Ordering number: EN887B Monolithic Linear IC LA4183 2.3 W 2-Channel AF Power Amplifier for Radio Cassette Players Features Package Dimensions . Built-in 2 channels enabling use in stereo and bridge BTL applications. . amplifier High-output: 3022A-DIP12F

LA1245

Abstract: SVC332 C-4698 73711 tuner alps reference alps catalog transistor c114 diagrams ift coil for 1mhz application sumida ift coil fm tuner alps
Contextual Info: Ordering number : EN737F Monolithic Linear IC LA1245 AM Electronic Tuner Overview Package Dimensions LA1245 is a high performance IC to be used as an AM unit : mm electronic tuner. It provides an automatic search-stop 3021B-DIP20S signal, local oscillator buffer-output, and the low level

BAV10

Contextual Info: BAV300 / 301 / 302 / 303 VISHAY Vishay Semiconductors Switching Diode Features • • • • • Silicon Epitaxial Planar Diodes Saving space Hermetic sealed parts Fits onto SOD 323 / SOT 23 footprints Electrical data identical with the devices BAV100.BAV103 / BAV200.BAV203

Contextual Info: BAV300 / 301 / 302 / 303 Switching Diode Features Silicon Epitaxial Planar Diodes Saving space Hermetic sealed parts Fits onto SOD 323 / SOT 23 footprints Electrical data identical with the devices BAV100.BAV103 / BAV200.BAV203 Applications General purposes

MGA-72543

Abstract: wimax atwk-wx01 VMMK-1225 ALM-31222 ADA-4789 ALM-42316 3866 transistor ABA-54563 limiters
Contextual Info: AVAGO TECHNOLOGIES WiMAX Designer Kit ATWK-WX01 Contains 3 parts each of the following 32 part numbers: ATF-50189 MGA-30216 MGA-30316 ALM-31222 ALM-31322 ALM-32320 ALM-42216 ALM-42316 MGA-565P8 ABA-54563 ADA-4789 HSMP-3816 HSMP-3866 ATF-54143 ATF-55143 ATF-33143

FMCW Radar

Abstract: 77GHz Radar infineon FMCW sensor radar 24ghz AN190 diagram radar circuit 77GHz circulator Types of Radar Antenna FMCW circuit FMCW
Contextual Info: Low Barri er RF Sch ottk y Dio d e BAT2 4 Mi xe r f or FMCW Ra dar at 2 4 GHz Application Note AN190 Revision: V1.0 Date: 22-01-2010 RF and Protecti on Devi c es Edition 15-02-2010 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

MMBD2104

Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Contextual Info: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a

MMBD2103

Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.

SMD Codes

Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.

Contextual Info: That EWLETT mL'fim H PACKARD 2.5 Gb/s SMQW Pigtaüed Laser Modules Technical Data HFCT-3024 SMQW Mini DIL Features D escription • Strained Multi Quantum Well SMQW Fabry Perot Laser Chip • Low Threshold and Operating Current • Wide Operating Tem perature Range

sp1648

Abstract: TRANSISTOR tr4 variable oscillator TR10 TR14 GEC Plessey Semiconductors variable inductor for 100MHz oscillator varactor capacitor diode
Contextual Info: JULY 1994 3028-2.1 SP1648 ECL OSCILLATOR The SP1648 is an emitter-coupled oscillator, constructed on a single monolithic silicon chip. Output levels are compatible with ECL III logic levels. The oscillator requires an external parallel tank circuit consisting of an

TRANSISTOR tr4

Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS JULY 1994 3028-2.1 SP1648 ECL OSCILLATOR The SP1648 is an emitter-coupled oscillator, constructed on a single monolithic silicon chip. Output levels are compatible with ECL III logic levels. The oscillator