DIODE PKR Search Results

SHINDENGEN 221

Abstract: SHINDENGEN DIODE
Contextual Info: K ' > 3 7 Schottky Barrier Diode Axial Diode • ^ ^ a O a OUTLINE DIMENSIONS D1NS6 60V 1A & • T ¡ 1 5 0 t: •Phhsm T’/ O V v i S H • 5mm\¿"j ffl i * •S F W 3 5 •DC/DC □VA-i? • * S . 7 -L>. 0A*|g • a « . /-K -^ M Ä ä s RATINGS Item ii

SHINDENGEN DIODE

Contextual Info: I? ÏE x V W 7. Surface Mounting Device '> 3 K y 7 Schottky Barrier Diode 1 Twin Diode OUTLINE DIMENSIONS DF15SC4M 40 V 15A 111! •S M D • T j 15 0 t ; • P rrsm •S R « ® •D C /D C Z iy lK -9 • * * . y - A . O A«ä§ •a«. RATINGS • ÎÊ fc flS ^ îÈ fê

SHINDENGEN DIODE

Contextual Info: y3y K y^ om Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S20SC9M 90V 20A • T j 15 C ÎC • P rrsm • S jc ÎjV J y ÿ L ^ mxniïtmm • SRW S • D C / D C H V A '- i? mmm. v -u . o a * ü • s u . iï-v-jii’im RATINGS • Î ë Î 'j s i ^ ü È t ë

SHINDENGEN DIODE

Contextual Info: 7. i j. .» i i —i u y _i_ i S u r f a c e Mounting Device y a - y *f*s S ch o ttk y Barrier Diode single Diode • flW ä E I OUTLINE DIMENSIONS DE5S6M 60V 5A •S M D • T j 15 0 t : •P hhsm m if. •S F W • D C /D C □ V A - Î ' • * s . y -A .

R10M

Abstract: ST2038
Contextual Info: E O PHOTOTRANSISTOR OPTOCOUPLERS g p ïm m a n ic s H24À1 H24A2 .50 REF The H24A series consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor. The devices are housed in a low-cost plastic package with lead spacing compatible with a dual in-line package.

SHINDENGEN DIODE

Abstract: 4D DIODE
Contextual Info: v a 7 y -o m Schottky Barrier Diode_ Twin Diode OUTLINE DIMENSIONS D10SC6M C a s e : ITO -2 2 0 60V 10A K l l • T i 15 0 t l • P hhsm 7J{3yisiU&i • 7 J 1 Æ -;U K rn ffl i* • S R S i • D C /D C □ V A - 5 ? mmm. v - h , o a «?i • a « , n î - 9 Jim w ,

s0320

Abstract: 345C 335C
Contextual Info: T2 UNITRODE CORP 9347963 dF U N I T RO DE C O R P | ^347^3 92D 00110b3 1 1063 D DUAL POWER SCHOTTKY RECTIFIERS HigH§gr'” ' 60A Pkr 45V USD345C USD320CHR USD335CHR USD345CHR FEATURES • Very Low Forward Voltage • Low R e co ve re d C h a rge • R u g g e d P a c k a g e D e sig n T O -3

TRANSISTOR SMD 58W

Abstract: smd transistor E21 PC-B2510-T1 TRANSISTOR SMD 58W 87 PC-B4317-L1 pc-b2510 PFc CIRCUIT ml4822 ZVS DRIVER P-44317-EC p-44317
Contextual Info: June 1996 Application Note 42032 ML4822 Power Factor Correction With Zero Voltage Resonant Switching INTRODUCTION The boost converter is a popular topology for improved power factor and reduced line harmonics, as specified in IEC 555-2 and other more recent standards. With this

LM2575-ADJ

Abstract: LM2575 step up converter diode 1N4001 specifications universal cell phone charger circuit diagram car battery charger circuit diagram 77458bv LM2575 diode u2 MC33341 trickle battery charger circuit based on zener an
Contextual Info: Order this document by AN1593/D AN1593 Low Cost 1.0 A Current Source For Battery Chargers Prepared by: Ondrej Pauk Industrial System Application Laboratory Roznov, CZ Figure 1. Low Cost Current Source for Battery Chargers Demonstration Board This paper describes two designs of low cost current

1N4001 zener diode

Abstract: LM2575-ADJ Car Battery 12V pulse charger diode 1n5819 1N4001 general diode sample schematic diagram 12v battery charger LM2575 step up converter 12V DC to 19V dC converter schematic diagram schematic diagram 24V NiMh charge controller 12V cell phone charger circuit diagram
Contextual Info: Order this document by AN1593/D Motorola Semiconductor Application Note AN1593 High Efficiency 1A Battery Charger Using the LM2575-ADJ and MC33341 PRELIMINARY INFORMATION by Ondrej Pauk Industrial System Application Laboratory, Roznov CZ Figure 1. High Efficiency Battery Charger Demonstration Board.

620CT

Abstract: 615CT IEC134 KHR605CT PHR605CT M801
Contextual Info: N AMER PHILIPS/DISCRETE QbE D ^ 5 3 1 3 1 ODllbhS S PHR605CT S E R IE S r - 0 ,3 - <7 V E R Y FAST R E C O V E R Y D O U BLE R EC T IFIER D IO D E S Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes which feature low forward voltage drop, very fast reverse recovery times and 'non-snap-off'. They are intended for use in

TRANSISTOR ED203

Abstract: FND10 MAN-3A 2N3980 LA 4301 do ic 4532A free germanium Germanium drift transistor texas instruments LED Display TIL epitaxial mesa
Contextual Info: T H E O P T O E L E C T R O N IC S D A T A B O O K Few people in the electronics industry realize that optoelectronics technology has a history which precedes the invention of the integrated circuit. It is also a relatively unknown fact that Texas instruments was a pioneer in the

1 henry INDUCTOR

Abstract: handsfree phone MC34018 1n4004 motorola diode DIODE 1N4004 mic mc34018 AN957 1N4004S N4O04 MC34011A MC34018 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR ^ APPLICATION NOTE A N957 In terfacin g The S peakerphone To The M C 3 4 0 1 0 /1 1 /1 3 Speech N etw o rks Prepared by Dennis Morgan Bipolar Analog IC Division IN TR O D U C TIO N Interfacing the MC34018 speakerphone circuit to the

irf5205

Abstract: IRF520 IRF521 IRF523 IRF522
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF520 IRF521 IRF522 IRF523 P o w e r Field E ffe c t T ra n s is to r N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid

Contextual Info: CO M PL IA NT TISP61089BSD *R oH S DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS TISP61089BSD High Voltage Ringing SLIC Protector Dual Voltage-Programmable Protectors - Supports Battery Voltages Down to -155 V - Low 5 mA max. Gate Triggering Current

TH3 thermistor

Abstract: thermal fuse GR-1089-CORE JESD51-2 TISP61089BSDR-S TRANSISTOR marking k2 dual K44 TRANSISTOR MARKING
Contextual Info: CO M PL IA NT TISP61089BSD *R oH S DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS TISP61089BSD High Voltage Ringing SLIC Protector Dual Voltage-Programmable Protectors - Supports Battery Voltages Down to -155 V - Low 5 mA max. Gate Triggering Current

Contextual Info: VDSS HiPerFETTM Power MOSFETs Q-Class IXFH/IXFT 30N50Q IXFH/IXFT 32N50Q Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C IDM TC = 25°C,

MC33341

Contextual Info: Order this document by MC33341/D M MOTOROLA - MC33341 Advance Information Power Supply B attery Charger Regulation Control C ircuit The MC33341 is a monolithic regulation control circuit that is specifically designed to close the voltage and current feedback loops in power supply

SKN-R 45

Contextual Info: HiPerFETTM Power MOSFETs VDSS ID25 RDS on IXFH 32N48 IXFT 32N48 N-Channel Enhancement Mode Avalanche Rated, High dv/dt = 480 V = 32 A = 0.13 Ω têê ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 480 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

Kvp 26A

Abstract: kvp 3a kvp 42 DIODE kvp 34 DIODE 100-200KV kvp diode kvp 68A hv rectifiers diode kvp 26 DIODE 8ph ZENER
Contextual Info: NEW E-MAIL ADDRESS DIODES EDI-SALES@INTERNETMCI.COM AXIAL LEAD DIODES CURRENT PRV VOLTS RECOVERY (nS) SURGE (A) SERIES PAGE STANDARD RECOVERY. PRINTED CIRCUIT MOUNT 6A 6A 6A 3A 2A 100 to 600mA 220mA 200mA 175mA 150mA 100mA 50 to 80mA 50mA 50-1000 50-1000

edi minibridge pb20

Abstract: Rectifier edi minibridge edi minibridge PB edi pb20 6ca4 5r4wga MPI 140 120 bridge rectifier
Contextual Info: electronic devices, inc. Short Form Catalog 90 silicon bridge rectifiers low & hv diodes stock & custom hv assemblies ELECTRONIC DEVICES, INC. • 21 GRAY OAKS AVE., YONKERS, NY 10710 • 914-965-4400 • 800-678-0828 • FAX 914-965-5531 • TELEX 681-8047

kvp smd

Abstract: kvp 42 DIODE kvp 26A M kvp diode 2005C 1.5 khp SMD kvp XMR5 0709a PKF SMD
Contextual Info: AXIAL LEAD DIODES CURRENT P R V VO LTS R E C O V E R Y (nS) SU R G E (A) S E R IE S PAGE 50-1000 50-1000 50-1000 50-1000 2000 to 3000 1000 to 4000 9000 4500 to 6000 7000 to 8000 9000 to 10000 11000 to 12000 1000 to 5000 10000 to 15000 STANDARD STANDARD STANDARD

kvp 42 DIODE

Abstract: kvp 68A kvp diode kvp 34 DIODE kvp 30 DIODE kvp 88 diode kvp 23A Kvp 26A kvp 26 DIODE 100-200KV
Contextual Info: NEW E-MAIL ADDRESS DIODES EDI-SALES@INTERNETMCI.COM AXIAL LEAD DIODES CURRENT PRV VOLTS RECOVERY (nS) SURGE (A) SERIES PAGE STANDARD RECOVERY. PRINTED CIRCUIT MOUNT 6A 6A 6A 3A 2A 100 to 600mA 220mA 200mA 175mA 150mA 100mA 50 to 80mA 50mA 50-1000 50-1000

QMV1006-1BF5

Abstract: automatic gain control qmv1006 AC03 automatic room power control circuit block diagram A0773971 AC01 lc ac03 QMV1 NORTEL laser lc
Contextual Info: AC03 Automatic Gain Control Amplifier Data Sheet Features Variable gain amplifier, -12.5 dB to +36 dB Single ended and differential mode of operation Single ended to differential converter Automatic gain control 50 ohm input and output impedances Generates the gain control voltage