MBR1535CT
Abstract: MBR1535CTG MBR1545CTG MBR1545CT MBR1545CT-G MBR1545-CTG
Contextual Info: MBR1535CT, MBR1545CT SWITCHMODEt Power Rectifier Features and Benefits • • • • • • • Center−Tap Configuration Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature 15 A Total 7.5 A Per Diode Leg
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mbr1535ctmbr1545ctmbr1535ct/dmbr1535ctg+3mbr1545ctgmbr1545ct-gmbr1545-ctg
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MBR1545CTG
Abstract: MBR1535CT MBR1535CTG MBR1545CT MBR1545 MBR1545CT-G MBR1535 MBR1545-CTG
Contextual Info: MBR1535CT, MBR1545CT SWITCHMODEt Power Rectifier Features and Benefits • • • • • • • Center−Tap Configuration Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature 15 A Total 7.5 A Per Diode Leg
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mbr1535ctmbr1545ctmbr1535ct/dmbr1545ctg+5mbr1535ctgmbr1545mbr1545ct-gmbr1535mbr1545-ctg
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Contextual Info: MBR1535CT, MBR1545CT SWITCHMODE] Power Rectifier Features and Benefits • • • • • • • Center−Tap Configuration Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature 15 A Total 7.5 A Per Diode Leg
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MBR1535CT
Abstract: MBR1545CTG MBR1535CTG MBR1545CT MBR1545CT-G MBR1545-CTG
Contextual Info: MBR1535CT, MBR1545CT SWITCHMODEt Power Rectifier Features and Benefits • • • • • • • Center−Tap Configuration Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature 15 A Total 7.5 A Per Diode Leg
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mbr1535ctmbr1545ctmbr1535ct/dmbr1545ctg+3mbr1535ctgmbr1545ct-gmbr1545-ctg
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MBR1535CT
Abstract: MBR1545CTG MBR1535CTG MBR1545CT MBR1545CT-G MBR1545-CTG
Contextual Info: MBR1535CT, MBR1545CT SWITCHMODE] Power Rectifier Features and Benefits • • • • • • • Center−Tap Configuration Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature 15 A Total 7.5 A Per Diode Leg
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MBR1545CT
Contextual Info: SEMICONDUCTOR MBR1545CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A O FEATURES C F Average Output Rectified Current E : IO=15A. G B Repetitive Peak Reverse Voltage Q : VRRM=45V. I Fast Reverse Recovery Time : trr=35ns.
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1545ct
Abstract: MBR1545CT 1545C diode 611
Contextual Info: SEMICONDUCTOR MBR1545CT MARKING SPECIFICATION TO-220AB PACKAGE 1. Marking method Laser Marking 2. Marking K 1 MBR 2 1545CT 611 3 No. 4 Item Marking Description KEC K KEC CORP. Device Name MBR MBR1545CT 1545CT Symbol Lot No. 2007. 9. 11 Revision No : 0 Diode
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mbr1545cto-220ab1545ct11tht+21545cdiode 611
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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mbrb3030ctlvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605oz 9983mbr3045pt transistor940 629 motorola 220motorola marking code k 652 to-220mur3030transistor bc 456diode marking 1n4007 motorola1n2069a14f diodebyv33-45
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sanyo 1500uF 6.3V capacitor
Abstract: K30 mosfet ceramic capacitor 4700pf 63V R5C DIODE sanyo 1500UF pentium MOTHERBOARD CIRCUIT diagram R5B transistor PBYR1035B IRL3303 IRU3033
Contextual Info: IRU3034 8-PIN PWM SWITCHER CONTROLLER IC PRELIMINARY DATASHEET FEATURES DESCRIPTION 8-pin SOIC switching controller with HICCUP current limiting reduces diode power dissipation to less than 1% of normal operation Soft start capacitor allows for smooth output
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iru3034100nsp55ctm6mv1500gx+1187khzsanyo 1500uf 6.3v capacitork30 mosfetceramic capacitor 4700pf 63vr5c diodesanyo 1500ufpentium motherboard circuit diagramr5b transistorpbyr1035birl3303iru3033
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motorola diode cross reference
Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3
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1n58171n58181m5819mbr150+14mbr160mbr190mbr110011dq0311dq04motorola diode cross referencereplacement uf5402ir 30d1diode ir 30d110df2 "cross reference1n4007 "direct replacementdiode ru4air 10d41n5818 "direct replacement
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K30 mosfet
Abstract: tsc500 6000UF CAPACITOR MOSFET K30 mosfet 20020 R5C DIODE sanyo 1500uF capacitor mark R5A sanyo capacitor 1000uf 6.3V SURFACE MOUNT RESISTOR
Contextual Info: US3034 8 PIN PWM SWITCHER CONTROLLER IC PRELIMINARY DATASHEET FEATURES DESCRIPTION 8 pin SOIC Switching Controller with HICCUP Current Limiting Reduces Diode Power Dissipation to Less than 1% of Normal Operation Soft Start Capacitor allows for smooth Output
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us30341500uf6mv1500gxk30 mosfet+9tsc5006000uf capacitormosfet k30mosfet 20020r5c diodesanyo 1500uf capacitormark r5asanyo capacitor 1000uf 6.3vsurface mount resistor
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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mbrd1035ctlvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe6051n5822 trra14f diodefr105 diodemr850diode a14abyv27 200 taplt2a02mbr3100 06301n4007 sod-123ses50
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mur1650
Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and
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mbrb1045vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mur1650t4 sod-123 1n4004mr25101n2069ses5001mur420 equivalentct pr1504equivalent for fr302 diodemur 460 switchdiode a14a surface mount
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FE16B
Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —
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mbrp60035ctlvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605fe16bmbr3045pt transistorfr102 sod-1231n4007 sod-123byv43-45byv19-45mur1660ct equivalentmur460 blfep16dt 0032mur420 equivalent
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Contextual Info: SEM ICONDUCTOR MBR1545CT TECHNI CAL DATA S C H O T T K Y BARRI ER T YP E DIODE SW ITC H IN G M O D E POW ER SUPPLY A PPLICATIO N. C O N V E R T E R & CH O PP E R A PPLICATION. FEA T U RE S • Average Output Rectified Current DIM A : I0=15A. MILLIMETERS 9.9 ±0.2
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tsc500
Abstract: capacitor 0.1MF 1KV 4mh inductor R5C DIODE 1000mF 35V axial capacitor IRU3034 IRU3034CS P55C IRL3103S IRL3303
Contextual Info: Data Sheet No. PD94148 IRU3034 8-PIN PWM SWITCHER CONTROLLER IC WITH CURRENT LIMITING DESCRIPTION FEATURES 8-Pin SOIC switching controller with HICCUP current limiting reduces diode power dissipation to less than 1% of normal operation Soft-Start capacitor allows for smooth output
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pd94148iru3034100nsp55ctm+9tsc500capacitor 0.1mf 1kv4mh inductorr5c diode1000mf 35v axial capacitoriru3034csp55cirl3103sirl3303
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k1388
Abstract: pin out of mosfet k1388 MBR2015CT K1388 Transistor transistor k1388 Fuji Shottky Diodes AN50 AP-523 IRF7413 MBR2015CTL
Contextual Info: www.fairchildsemi.com Application Note 50 Implementing the RC5050 and RC5051 DC-DC Converters on Pentium Pro Motherboards Introduction This document describes how to implement a switching voltage regulator using an RC5050 or an RC5051 high speed controller, a power inductor, a Schottky diode, appropriate
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rc5050rc5051ap-523an30000050+9k1388pin out of mosfet k1388mbr2015ctk1388 transistortransistor k1388fuji shottky diodesan50irf7413mbr2015ctl
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TSC500
Abstract: PBYR1035B
Contextual Info: Data Sheet No. PD94148 IRU3034 & PbF 8-PIN PWM SWITCHER CONTROLLER IC WITH CURRENT LIMITING DESCRIPTION FEATURES 8-Pin SOIC switching controller with HICCUP current limiting reduces diode power dissipation to less than 1% of normal operation Soft-Start capacitor allows for smooth output
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pd94148iru3034iru3034csiru3034cspbf+2tsc500pbyr1035b
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tsc500
Abstract: pbyr1035b free pdf download P55 MOSFET pentium 4 atx power supply diagram R5B transistor R5C DIODE IRL3103S IRL3303 IRU3033 IRU3034
Contextual Info: Data Sheet No. PD94148 revA IRU3034 & PbF 8-PIN PWM SWITCHER CONTROLLER IC WITH CURRENT LIMITING DESCRIPTION FEATURES 8-Pin SOIC switching controller with HICCUP current limiting reduces diode power dissipation to less than 1% of normal operation Soft-Start capacitor allows for smooth output
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pd94148iru3034100nstsc500+8pbyr1035bfree pdf download p55 mosfetpentium 4 atx power supply diagramr5b transistorr5c diodeirl3103sirl3303iru3033
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k1388
Abstract: MBR2015CT K1388 Transistor transistor k1388 philips diode PH 37m diode k1388 philips 3.3V DC-DC converter step down AN50 FAIRCHILD MBR1545C Fuji Shottky Diodes
Contextual Info: www.fairchildsemi.com Application Note 50 Implementing the RC5050 and RC5051 DC-DC Converters on Pentium Pro Motherboards Introduction This document describes how to implement a switching voltage regulator using an RC5050 or an RC5051 high speed controller, a power inductor, a Schottky diode, appropriate
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rc5050rc5051an30000050k1388+9mbr2015ctk1388 transistortransistor k1388philips diode ph 37mdiode k1388philips 3.3v dc-dc converter step downan50 fairchildmbr1545cfuji shottky diodes
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philips diode PH 37m
Abstract: K1388 10KW 1N5817 AN42 AP-523 RC5040 RC5042 RC5043 sanyo timing controller
Contextual Info: www.fairchildsemi.com Application Note 42 Implementing the RC5040 and RC5042 DC-DC Converters on Pentium Pro Motherboards Introduction This document describes how to implement a switching voltage regulator using an RC5040 or an RC5042 high speed controller, a power inductor, a Schottky diode, appropriate
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rc5040rc5042an30000042philips diode ph 37m+7k138810kw1n5817an42ap-523rc5043sanyo timing controller
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PK MUR 460
Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,
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mbr340vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605pk mur 460pk mur460pk mur460 1110gi756 diodecarrier 30bq015usd11200525 transient voltage suppressorsdiode a14a surfacess14 sod123mbrd360
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MR2835S equivalent
Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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mbr6045ptvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mr2835s equivalenta14f diode1n5404 diodefe16amur860 equivalentmur1620ctmur420 diodeusd745c equivalentmbrd360pr1502
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equivalent components of diode 1N5399
Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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mbr6045wtvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605equivalent components of diode 1n5399diode ses50016a10 bl diodeequivalent for fr302 diodeequivalent components of diode her104fe8b diodefe8dgi756 diodea14f diodemur420 diode
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