DIODE MARKING F6 Search Results

Contextual Info: E?R R ectifie PD-9.3261 4A554S2 D014baD 3fl4 H I N R International INTERNATIONAL RECTIFIER E5E ]> IR F610 HEXFET P o w e r M O S F E T • • • • • Dynam ic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirem ents

MARKING CODE f5

Abstract: diode marking code h6 marking code f4 DIODE Zener diode MARKING H5 CMOZ3V0 CMOZ5V1 Zener diode h5 zener diode f7 diode marking 714 CMOZ11V
Contextual Info: Central CMOZ2V4 THRU CMOZ43V TM Semiconductor Corp. SURFACE MOUNT ULTRAmini SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4 Series Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini™

diode marking f6

Contextual Info: Super Fast Recovery Diode Axial Diode Wtm D1NF60 OUTLINE U nit-m m W eight 0.19g Typ Package : AX057 600V 0.8A UJ Feature • H lff iF R D • H igh V o lta g e S u p e r FRD • ñ S 'f X • trr = 4 0 0 n s • L o w N oise 02.6 • trr= 4 0 0 n s -M -

Contextual Info: FDS7764S 30V N-Channel PowerTrench SyncFET General Description Features The FDS7764S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

diode F6 03

Abstract: KV1460 c65 diode
Contextual Info: KV1460 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ ■ FM Radio ■ Voltage Controlled Oscillator ■ Battery Operated Products Very Low Operating Voltage 1 to 6.5 V Excellent Linearity (CV Curve) Large Capacitance Ratio (A1 = 4.70 minimum)

138A1

Contextual Info: FDD6670S 30V N-Channel PowerTrench SyncFET General Description Features The FDD6670S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

DMV1500

Abstract: DMV1500HD
Contextual Info: DMV1500HD DAMPER + MODULATION DIODE FOR CRT TV Table 1: Main Product Characteristics DAMPER MODUL. IF AV 6A 3A IFpeak (max) 12 A 12 A VRRM 1500 V 600 V trr (typ) 150 ns 60 ns VF (typ) 1.0 V 1.0 V VFP (typ) 21 V 5V DAMPER 1 Full kit in one package • High breakdown voltage capability

high voltage mosfet, to-220 case

Contextual Info: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: FDP6690S/FDB6690S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

FDW2501NZ

Abstract: 2501NZ DIODE marking S4 06 2502P CBHK741B019 F63TNR FDW2502P
Contextual Info: FDW2501NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

B667

Abstract: CBVK741B019 FDB6676S FDP6676 FDP6676S FDP7060 Schottky diode TO220
Contextual Info: FDP6676S / FDB6676S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

2502P

Abstract: CBHK741B019 F63TNR FDW2502P FDW2507NZ
Contextual Info: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains

FFA60UP20DN

Contextual Info: FFA60UP20DN 60 A, 200 V, Ultrafast Dual Diode Features Description • • • • • The FFA60UP20DN is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other

CBVK741B019

Abstract: F011 F63TNR F852 FDS6690A FDS6984S FDS6986S FDS9953A L86Z
Contextual Info: FDS6986S Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6986S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages

Contextual Info: FFA60UA60DN UItrafast ll Dual Diode Features Description • Ultrafast Recovery, Trr = 90ns @ IF = 30 A The FFA60UA60DN is an ultrafast ll dual diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of

Contextual Info: FDFS2P103 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P103 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

MOSFET TSSOP-8

Abstract: 2502P 2507N CBHK741B019 F63TNR FDW2502P FDW2507N Fairchild MOSFET TSSOP-8 dual n-channel
Contextual Info: FDW2507N Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains

DIODE S4 75a

Contextual Info: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains

Diode S4 55a

Contextual Info: FDW2503NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

TO-252 N-channel power MOSFET

Contextual Info: FDD2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.6 A, 200 V. RDS ON = 130 mΩ @ VGS = 10 V

FDS6694

Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
Contextual Info: FDS6694 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

Contextual Info: FDS6898A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

Contextual Info: FDS6898A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

Contextual Info: FDS2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.0 A, 200 V. RDS ON = 130 mΩ @ VGS = 10 V