DIODE MARKING F6 Search Results

diode marking f6

Contextual Info: Super Fast Recovery Diode Axial Diode Wtm D1NF60 OUTLINE U nit-m m W eight 0.19g Typ Package : AX057 600V 0.8A UJ Feature • H lff iF R D • H igh V o lta g e S u p e r FRD • ñ S 'f X • trr = 4 0 0 n s • L o w N oise 02.6 • trr= 4 0 0 n s -M -

FFA60UP20DN

Contextual Info: FFA60UP20DN 60 A, 200 V, Ultrafast Dual Diode Features Description • • • • • The FFA60UP20DN is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other

CBVK741B019

Abstract: F011 F63TNR F852 FDS6690A FDS6984S FDS6986S FDS9953A L86Z
Contextual Info: FDS6986S Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6986S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages

Contextual Info: FFA60UA60DN UItrafast ll Dual Diode Features Description • Ultrafast Recovery, Trr = 90ns @ IF = 30 A The FFA60UA60DN is an ultrafast ll dual diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of

FDS6694

Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
Contextual Info: FDS6694 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

CBVK741B019

Abstract: F011 F63TNR F852 FDS6961AZ FDS9953A L86Z
Contextual Info: FDS6961AZ Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

CBVK741B019

Abstract: F011 F63TNR F852 FDS4672A FDS9953A L86Z
Contextual Info: FDS4672A 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

CBVK741B019

Abstract: F011 F63TNR F852 FDS2570 FDS9953A L86Z
Contextual Info: FDS2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4A, 150 V.

CBVK741B019

Abstract: F011 F63TNR F852 FDS9400A FDS9953A L86Z
Contextual Info: FDS9400A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive

CBVK741B019

Abstract: F63TNR FDD6530A FDD6630A FDD6680
Contextual Info: FDD6530A 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

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Contextual Info: FDD2612 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

Contextual Info: Product specification BZX585 Series Features Total Power Dissipation: Max. 300mW Two Tolerance Series: 2% and 5% Working Voltage Range: Nom. 2.4 to 75V Absolute Maximum Ratings Ta = 25 Parameter Total Power Dissipation Symbol Rating Unit Ptot 300 mW IF

Contextual Info: n - n x V 'C X - Y Super Fast Recovery Diode Axial Diode O U T L IN E D IM E N S IO N S D1NF60 Unit • mm Package I AX057 S 600V 0.8A hLO lid 2 0 m in • i& M X I 4 2.6± 2 0 m in ±0.1 • t r r 400 ns • 5 m m \d " j a i- m -N - tt S roianty •S R S ÎÜ

smd diode MARKING F6

Abstract: marking code diode Eb SMD smd "marking codes" c9 smd marking H6 smd E6 DIODE H5 c2 NXP date code marking NXP MARKING *H5 MARKING CODE E5 NXP H7 marking code smd
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BZX585 series Voltage regulator diodes Product data sheet Supersedes data of 2004 Mar 26 2004 Jun 22 NXP Semiconductors Product data sheet Voltage regulator diodes BZX585 series FEATURES PINNING • Total power dissipation: max. 300 mW

CBVK741B019

Abstract: F011 F63TNR F852 FDS6912 FDS9953A L86Z
Contextual Info: FDS6912 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

fds4935

Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z c2335 9842A
Contextual Info: FDS4935 Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive

SMD ZENER DIODE MARKING CODE G3

Abstract: marking code gc SMD zener PZU11 zener diode SMD marking code 27 4B pzuxb smd marking KD SMD MARKING GP 728 smd marking KH Zener diode smd marking h5 PZU13
Contextual Info: PZUxB series Single Zener diodes in a SOD323F package Rev. 01 — 7 March 2006 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD323F SC-90 very small and flat lead Surface Mounted Device (SMD) plastic package.

S1G15

Contextual Info: FDS9926A Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage

6680

Abstract: d-pak DEVICE MARKING CODE table CBVK741B019 F63TNR FDD6630A FDD6680 FZ9935
Contextual Info: FDD6630A N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate

FDN327N

Contextual Info: FDN327N N-Channel 1.8 Vgs Specified PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 2 A, 20 V. RDS ON = 70 mΩ @ VGS = 4.5 V

Contextual Info: FDS6614A N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

6680 MOSFET

Abstract: FDD6672A
Contextual Info: FDD6672A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

FDC5614P

Abstract: SSOT-6 CBVK741B019 F63TNR FDC633N
Contextual Info: FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –3 A, –60 V. RDS ON = 0.100 Ω @ VGS = –10 V

FDC634P

Abstract: SSOT-6 CBVK741B019 F63TNR FDC633N
Contextual Info: FDC634P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –3.5 A, –20 V. RDS ON = 80 mΩ @ V GS = –4.5 V