DIODE MARKING CODE I5 Search Results

Contextual Info: SIEMENS Silicon RF Switching Diode BAT 18 . • Low-loss VHF/UHF switch above 10 MHz • Pin diode with low forward resistance Type Marking Ordering Code Pin Configuration Package1 BAT 18 A2 Q62702-A787 SOT 23 °- ^ ^ 1-ÍHA07002 BAT 18-04

TSE 151

Contextual Info: ERC01 1.5A I Outline Drawings GENERAL USE RECTIFIER DIODE : Features • W ide voltage class • BG fSISii • I I tjv : Marking High reliability ■ E I& : Applications * 5-u - K : É Color code : White •« » ¿ ft / General purpose rectifier applications

ERD03

Abstract: T151 T760 T810
Contextual Info: ERD03 3 .OA S ± /J K : Outline Drawings GENERAL USE RECTIFIER DIODE Features H igh current • ftftJ H tt : Marking High reliability : Applications A 9 - 3 - K: Ö Color code : White • u s a General purpose rectifier applications m Type name g y h Wft

151S5

Contextual Info: ERC05 1 .2A - * ’ Outline Drawings _ GENERAL USE R EC TIFIER DIODE ! Features • If— Hi gh surge current • Sift fl 14 • S tf I Marking High reliability : Applications A 7 - 3 - K : fi Color code : Orange • V X S tifc General purpose rectifier applications

T930

Abstract: diode code yw marking code YW DIODE T460 ERC13 T151 Shl50
Contextual Info: ERC13 1 .2A — K : Outl i ne Drawings GENERAL USE RECTIFIER DIODE •*(#•§ : Features • High surge current • 'Jv5 2 ,liM • A fflS H i Compact size, lightweight M it T F I Marking High reliability * 9 - 3 - H :# Color code: Blue \ General purpose rectifier applications

ERA82-004

Abstract: P151 T151 T810 T930 a316
Contextual Info: ERA 82-004 o.6A M J f : Outline Drawings SC H O TTK Y BARRIER DIODE Features • te V F Low V f ISït f : Marking *•7- o—K : t-i Color code •White Super high speed switching. • n m - ¿ ¿ a ti« H 4 High reliability by planer design. ¥ 1 D y f-Na

30SC4M

Abstract: FtZ MARKING CODE Diodo Schottky D30SC4M DIODO diodo 10 A
Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE Package : ITO-3P D30SC4M U nit : m m W eight 4.3 « T y p 15 40V 30A 5.5 . n ? h £ 9 (fl) Date code N Feature f f a « 9 (n > • Tj=i5(rc • Tj=1 50°C • P r r s m P K t? • P r r s m Rating • ttU K S B • High lo Rating

FtZ MARKING CODE

Abstract: D25SC6M D25SC6MR
Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE D25SC6MR Unit :m m P a c k a g e : IT O -3 P W eight 4.3k T y p 15 60V 25A 5.5 n-yt-m XW ) D a te code Feature • Tj=i5(rc • Tj=150°C • P r r s m P K t? • P rrsm R ating • ttU K S B • High lo Rating • 7 J I Æ - J L/K

DIODE S6 marking code

Abstract: diode S6
Contextual Info: 5 /a s /h *- AUT' S H 'Í Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS D1NS6 U n it • m m Package I AX057 60V 1A • T jl5 0 ° C • P I 7 rrsm ffiiE 1)C • 5 mm t í "J m •SRSÎÜ • D C /D C •»(!> -W - m No.4070:i5Mra No.4060:27Mra ^ 2 i£f

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

Contextual Info: W hü1 H E W L E T T mLttM P A C K A R D Surface Mount RF Schottky Detector Diodes in SOT-363 SC-70, 6 Lead Technical Data Features • Surface Mount SOT-363 Package • High Detection Sensitivity: Up to 50 mV/nW at 915 MHz Up to 35 mV/nW at 2.45 GHz Up to 25 mV/nW at 5.80 GHz

D1NK60

Abstract: AX057 diode MARKING CODE K6 WMM marking code
Contextual Info: Super Fast Recovery Diode Axial Diode Wtm OUTLINE Package : AX057 D1NK60 U n it-m m W e ig h t 0 .1 9 g T y p 600V 0.8A UJ Feature 02.6 • High Voltage Super FRD • H lf f iF R D • trr=75ns • ® V f=1.3V • trr=75ns • Low V f=1 ,3V 0> Main Use

Contextual Info: SIEMENS Silicon Schottky Diodes BAS 40. • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing € Available with C E C C quality assessm ent ESD : Electrostatic discharge sensitive device, observe handling precautions!

1N60C

Abstract: FAIRCHILD FQD DPAK DPAK-2 PACKAGE PSPICE Orcad 1n60 FQD1N60CTM
Contextual Info: FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: S3770x/P 8CH Darlington TR Sink Driver Semiconductor Description http:// www.auk.co.kr The S3770x Series are high-voltage, high-current Darlington transistor arrays. Each consists of eight NPN Darlington pairs that feature high-voltage outputs with common-cathode clamp diodes

SOP20 20 pin Package

Abstract: DF25 SOP20 Package
Contextual Info: S3770x/P 8CH Darlington TR Sink Driver Semiconductor http:// www.auk.co.kr Description The S3770x Series are high-voltage, high-current Darlington transistor arrays. Each consists of eight NPN Darlington pairs that feature high-voltage outputs with common-cathode clamp diodes

Contextual Info: S378x 8CH Darlington TR Source Driver Semiconductor Description http:// www.auk.co.kr The S378x Series are comprised of eight source current Transistor Array. These drivers are specifically designed for fluorescent display applications. Applications include relay, hammer and lamp drivers.

SOP20

Abstract: SOP20 Package DIP18 DIP-18 8ch DARLINGTON TRANSISTOR ARRAY SOP20 30 pin Package dip18 package diode marking code I5 cmos 40 DARLINGTON TRANSISTOR ARRAY
Contextual Info: S378x 8CH Darlington TR Source Driver Semiconductor http:// www.auk.co.kr Description The S378x Series are comprised of eight source current Transistor Array. These drivers are specifically designed for fluorescent display applications. Applications include relay, hammer and lamp drivers.

6670A

Contextual Info: FDS6670A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

Contextual Info: IR F R 2 6 0 5 IR F U 2 6 Q5 htemational ^Rectifier HEXFET Power MOSFET • • • • • • • Ultra Low On-Resistance ESD Protected Surface Mount IRFR2605 Straight Lead (IRFU2605) 150°C Operating Temperature Repetitive Avalanche Rated Fast Switching

Contextual Info: About Lab Kits General: Engineers and designers find Lab Kits convenient and economical. Each Lab Kit contains a broad range of the most popular components. Assembly: Lab Kits are available on tape and reel for automated assembly on pick-andplace m achines or in bulk bags and

20LC20u

Contextual Info: Super Fast Recovery Diode Twin Diode l ^ t l l DF20LC20US OUTLINE U n it‘m m Package : STO -220 W eight lJ> g T y p 10.2 200V 20A Dale code ^ Control No Feature • SMD • Low Noise • SM D • e y 'f x • trr=25ns @ T y p e No. +«- a il • trr-25ns

Scans-00828

Abstract: DE10PC3 SHINDENGEN DIODE 0336g
Contextual Info: Schottky Barrier Diode Twin Diode mnm DE10PC3 o u tlin e E-pack Package Unit I mm Weight 0.326k Typ r r« 30 V 10A œ - Feature • SMD • SMD • î 3 V f=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-RKG 10PC3 n - y W X fW Date code Main Use

DIODE 3LU

Abstract: 3lu diode DIODE 3LU 35 trr35ns 3lu 05 diode
Contextual Info: Super Fast Recovery Diode Axial Diode Wtm S3L20U OUTLINE Unit-mm Weight 1.06g Typ Package : AX14 200V 3A 26.5 26.5 Feature • m s 'ix • L o w N oise • trr=35ns • trr= 3 5 n s iT > Main Use * J S fU B M W Marking • S w itc h in g R eg u la to r