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    DIODE MARKING CODE A10 Search Results

    DIODE MARKING CODE A10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA
    		Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) PDF Buy
    54LS190/BEA
    		Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) PDF Buy
    2910/BQA
    		Rochester Electronics LLC 2910 - Microprogram Controller - Dual marked (7801701QA) PDF Buy
    MQ80C186-12/BYA
    		Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) PDF Buy
    54L04/BDA
    		Rochester Electronics LLC 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) PDF Buy

    DIODE MARKING CODE A10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    diode rectifier siemens

    Contextual Info: SIEMENS BAT 62-02W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies ESD: Electrostatic discharge sensitive device, observe handling precaution BAT 62-02W L 1 =C Q62702-A1028 h Pin Configuration < Marking Ordering Code CM Type


    OCR Scan     		2-02W 2-02W Q62702-A1028 SCD-80 diode rectifier siemens PDF

    44S DIODE

    Abstract: Q62702-A1066 marking 45s marking C1 MARKING 44s Q62702-A1065 Q62702-A1067 cu marking code diode DIODE BAS JS v Marking on semiconductor 720
    Contextual Info: BAS 40W Silicon Schottky Diode ● ● ● ● General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Type Ordering Code tape and reel Pin Configuration 1 2 3 BAS 40-04W BAS 40-05W BAS 40-06W Q62702-A1065


    Original     		0-04W 0-05W 0-06W Q62702-A1065 Q62702-A1066 Q62702-A1067 OT-323 44S DIODE Q62702-A1066 marking 45s marking C1 MARKING 44s Q62702-A1065 Q62702-A1067 cu marking code diode DIODE BAS JS v Marking on semiconductor 720 PDF

    POWER MOSFET 4600

    Abstract: 1A 700V MOSFET
    Contextual Info: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		TSM2N70 O-220 O-251 O-252 TSM2N70 POWER MOSFET 4600 1A 700V MOSFET PDF

    TSM10N06

    Contextual Info: TSM10N06 60V N-Channel MOSFET TO-252 DPAK PRODUCT SUMMARY VDS (V) RDSON (mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 60 Features ID (A) 65 @ VGS = 10V 10 80 @ VGS = 5V 10 110 @ VGS = 4V 9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		TSM10N06 O-252 TSM10N06CP TSM10N06 PDF

    marking code l sot-25 step-up

    Contextual Info: TS1909 MicroPower VFM Boost DC to Dc Converter SOT-25 Pin Definition: 1. Enable 2. Output 3. N.C 4. Ground 5. SW General Description The TS1909 is a high efficiency VFM Step-up DC/DC converter for small, low input voltage or battery powered systems with ultra low quiescent supply current. The TS1909 accept a positive input voltage from start-up voltage to


    Original     		TS1909 OT-25 TS1909 marking code l sot-25 step-up PDF

    marking 6AC sot23

    Contextual Info: Datasheet P-Channel Enhancement Mode MOSFET Features TDM3415S Pin Description -20V/-1.5A , RDS ON =130mΩ(typ.) @ VGS=-4.5V RDS(ON)=170mΩ(typ.) @ VGS=-2.5V Top View of SOT23-3L Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)


    Original     		TDM3415S -20V/-1 OT23-3L TDM3415Sâ TDM341 TDM2301S 23-3L marking 6AC sot23 PDF

    SOP8 marking A10

    Contextual Info: TSM9426D 20V Dual N-Channel MOSFET w/ESD Protected SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 PRODUCT SUMMARY VDS V RDS(on)(mΩ) 20 Features ID (A) 14 @ VGS = 10V 9.4 16 @ VGS = 4.5V 8 22 @ VGS = 2.5V


    Original     		TSM9426D TSM9426DCS SOP8 marking A10 PDF

    APM2509N

    Abstract: APM2509NF ANPEC STD-020C
    Contextual Info: APM2509NF N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/50A , RDS ON =7.5mΩ (typ.) @ VGS=10V RDS(ON)=13mΩ (typ.) @ VGS=4.5V • • • • Super High Dense Cell Design Avalanche Rated Top View of TO-220 Reliable and Rugged Lead Free Available (RoHS Compliant)


    Original     		APM2509NF 5V/50A O-220 APM2509N APM2509N RSI86-91, ANSI/J-STD-002 MIL-STD-883D-2003 APM2509NF ANPEC STD-020C PDF

    SL868

    Abstract: SL869 SL89N sl7ep sl7eg SL86G FCBGA 956 pin 06D6H Marking code X42 A110
    Contextual Info: Intel Pentium® M Processor on 90 nm Process with 2-MB L2 Cache and Intel® Processor A100 and A110 on 90 nm process with 512-KB L2 Cache Specification Update August 2008 Revision 027 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR


    Original     		512-KB SL868 SL869 SL89N sl7ep sl7eg SL86G FCBGA 956 pin 06D6H Marking code X42 A110 PDF

    A1712

    Abstract: AN651 Si4684-A10 SI4684
    Contextual Info: Si 4 6 8 4 - A10 S INGLE - CHIP , F M / D A B /D AB + R ADIO R ECEIVER Features     Worldwide FM band support 76–108 MHz Advanced RDS/RBDS decoder DAB, DAB+ Band III support (168–240 MHz) Supports WorldDMB Receiver Profiles 1 and 2 OFDM channel demodulator


    Original     		PDF

    23146

    Abstract: APM7330 ANPEC APM7330J A102 STD-020C APM73
    Contextual Info: APM7330J Dual N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/8.5A, RDS ON = 19mΩ (typ.) @ VGS = 10V RDS(ON) = 23mΩ (typ.) @ VGS = 4.5V • • • Super High Dense Cell Design Top View of DIP − 8 Reliable and Rugged Lead Free Available (RoHS Compliant)


    Original     		APM7330J APM7330 APM7330 23146 ANPEC APM7330J A102 STD-020C APM73 PDF

    APM2903

    Abstract: M2903 APM2903CG STD-020C
    Contextual Info: APM2903CG Dual P-Channel Enhancement Mode MOSFET Features Pin Description D2 • D2 -20V/-5A , D1 RDS ON = 28mΩ(typ.) @ VGS= -4.5V G2 D1 S2 RDS(ON)= 40mΩ(typ.) @ VGS= -2.5V G1 RDS(ON)= 55mΩ(typ.) @ VGS= -1.8V • • • S1 Super High Dense Cell Design


    Original     		APM2903CG -20V/-5A MIL-STD-883D-2003 MIL-STD-883D-1005 JESD-22-B MIL-STD-883D-1011 MIL-STD-883D-3015 100mA APM2903 M2903 APM2903CG STD-020C PDF

    APM2323A

    Abstract: STD-020C APM2323AA
    Contextual Info: APM2323AA P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-2.5A , RDS ON = 90mΩ(typ.) @ VGS= -4.5V RDS(ON)= 130mΩ(typ.) @ VGS= -2.5V RDS(ON)= 200mΩ(typ.) @ VGS= -1.8V • • • Super High Dense Cell Design Top View of SOT-23 Reliable and Rugged


    Original     		APM2323AA -20V/-2 OT-23 150oC APM2323A APM2323A STD-020C APM2323AA PDF

    APM4015P

    Abstract: apm*4015p apm4015 APM4015PU APM40 apm*4015 STD-020C inverter source code 013A1 DSA0042778
    Contextual Info: APM4015PU P-Channel Enhancement Mode MOSFET Features • Pin Description -40V/-45A, RDS ON = 13mΩ (typ.) @ VGS=-10V RDS(ON)= 19mΩ (typ.) @ VGS=-4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)


    Original     		APM4015PU -40V/-45A, O-252 APM4015P APM4015P apm*4015p apm4015 APM4015PU APM40 apm*4015 STD-020C inverter source code 013A1 DSA0042778 PDF

    apm30

    Contextual Info: APM3015NFP N-Channel Enhancement Mode MOSFET Features • Pin Description SD 30V/50A, G RDS ON =12mΩ (typ.) @ VGS=10V RDS(ON)=17mΩ (typ.) @ VGS=4.5V • • • Super High Dense Cell Design Top View of TO-220 -FP Reliable and Rugged Lead Free and Green Devices Available


    Original     		APM3015NFP 0V/50A, O-220 APM3015N O-220-FP JESD-22, apm30 PDF

    apm2308

    Abstract: APM2308A A102 STD-020C max6280
    Contextual Info: APM2308A N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/3A , RDS ON = 60mΩ(typ.) @ VGS= 10V RDS(ON)= 90mΩ(typ.) @ VGS= 4.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOT-23-3 Lead Free Available (RoHS Compliant)


    Original     		APM2308A OT-23-3 APM2308 APM2308 APM2308A A102 STD-020C max6280 PDF

    APM1401AS

    Abstract: APM1401A STD-020C ISD04 L SC-70
    Contextual Info: APM1401AS P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-0.8A , RDS ON = 270mΩ(typ.) @ VGS= -4.5V RDS(ON)= 420mΩ(typ.) @ VGS= -2.5V RDS(ON)= 650mΩ(typ.) @ VGS= -1.8V • • • Super High Dense Cell Design Top View of SC-70 Reliable and Rugged


    Original     		APM1401AS -20V/-0 SC-70 APM1401A APM1401A APM1401AS STD-020C ISD04 L SC-70 PDF

    APM1402A

    Abstract: APM1402AS 01-5AL A102 STD-020C ISD04
    Contextual Info: APM1402AS N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/1.1A, RDS ON = 135mΩ(typ.) @ VGS= 4.5V RDS(ON)= 180mΩ(typ.) @ VGS= 2.5V RDS(ON)= 280mΩ(typ.) @ VGS= 1.8V • • • Super High Dense Cell Design Top View of SC-70 Reliable and Rugged


    Original     		APM1402AS SC-70 APM1402A APM1402A APM1402AS 01-5AL A102 STD-020C ISD04 PDF

    DIODE marking S4 23a

    Contextual Info: APM2807QB P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C G S MOSFET • -20V/-2.3A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • • Super High Dense Cell Design A Reliable and Rugged NC D


    Original     		APM2807QB -20V/-2 500mA. APM2807 150oC R0-2000 DIODE marking S4 23a PDF

    APM4568

    Abstract: APM4568J apm*4568 36M0 P-Channel MOSFET code L 1A 40v 7.5a P-Channel N-Channel MS-001 STD-020C 40v 7.5a N- and P-Channel
    Contextual Info: APM4568J Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 40V/7.5A, RDS(ON) =21mΩ (typ.) @ VGS = 10V RDS(ON) =30mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of PDIP − 8 -40V/-6A, RDS(ON) =36mΩ (typ.) @ VGS =-10V


    Original     		APM4568J -40V/-6A, RSI86-91, ANSI/J-STD-002 MIL-STD-883D-2003 883D-1005 JESD-22-B, 883D-1011 APM4568 APM4568J apm*4568 36M0 P-Channel MOSFET code L 1A 40v 7.5a P-Channel N-Channel MS-001 STD-020C 40v 7.5a N- and P-Channel PDF

    APX9268

    Abstract: A9268 A6 ZENER DIODE STD-020C A-9268 Ifg sensor
    Contextual Info: APX9268 Single-Phase Full-Wave Motor Driver for Silent Fan Motor Features General Description • • Silent Driver The APX9268 is a single phase full wave for fan motor. The output signal of this IC is the amplified hall • Low Supply Current • Single Phase Full Wave Fan Driver


    Original     		APX9268 APX9268 A9268 A6 ZENER DIODE STD-020C A-9268 Ifg sensor PDF

    A102

    Abstract: APM1404A APM1404AS STD-020C 1E4 SC-70
    Contextual Info: APM1404AS N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/1.5A, RDS ON = 65mΩ(typ.) @ VGS= 4.5V RDS(ON)= 80mΩ(typ.) @ VGS= 2.5V RDS(ON)= 110mΩ(typ.) @ VGS= 1.8V • • • Super High Dense Cell Design Top View of SC-70 Reliable and Rugged


    Original     		APM1404AS SC-70 APM1404A APM1404A A102 APM1404AS STD-020C 1E4 SC-70 PDF

    high speed Zener Diode 200v

    Abstract: X9267
    Contextual Info: APX9267 Single-Phase Full-Wave Motor Driver for Silent Fan Motor Features General Description • Single Phase Full Wave Fan Driver • Silent Driver • Low Supply Current • Low Standby Current Lock mode TOFF or PWM 0 The APX9267 is a single phase full wave motor driver for


    Original     		APX9267 APX9267 MIL-STD-883D-2003 MIL-STD-883D-1005 JESD-22-B MIL-STD-883D-1011 MIL-STD-883D-3015 100mA high speed Zener Diode 200v X9267 PDF

    DS20A

    Abstract: APM4354 APM4354KP f 0452 N-Channel MOSFET STD-020C ds20a6
    Contextual Info: APM4354KP N-Channel Enhancement Mode MOSFET Pin Description Features D • D 30V/70A, D D RDS ON =4.5mΩ (typ.) @ VGS = 10V S S RDS(ON) =6mΩ (typ.) @ VGS = 4.5V • • • • S G Super High Dense Cell Design Avalanche Rated Top View of KPAK Reliable and Rugged


    Original     		APM4354KP 0V/70A, APM4354 APM4354 DS20A APM4354KP f 0452 N-Channel MOSFET STD-020C ds20a6 PDF