DIODE MARKING CODE 4B Search Results
DIODE MARKING CODE 4B Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 5446/BEA | Rochester Electronics LLC | 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) |
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| 54LS190/BEA | Rochester Electronics LLC | 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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DIODE MARKING CODE 4B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
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1n8211n821a1n8231n823a+16 | |
marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
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1n58171n8211n58181n821a+11 | |
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
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1n58171n8211n58181n821a+11 | |
marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
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1n58171n8211n58181n821a+11 | |
Diode RL 4B
Abstract: phototransistor microwaves Diode 4B PS2841-4A PS2841-4B 4b, optocoupler PS280X
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ps2841-4aps2841-4b12-pindiode rl 4b+4 | |
Diode 4B
Abstract: Diode RL 4B phototransistor microwaves PS2841-4A PS2841-4B 4B marking
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ps2841-4aps2841-4b12-pinps280x+4 | |
diode blue stripe
Abstract: Wavetek 134 DSR5500X DSR5000 DSR5400X 2N4430 DSR3000 DSR5700X
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OCR Scan |
00014h1dsr3000dsr5000diode blue stripe+5 | |
marking DIODE 2U 04
Abstract: 386b
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OCR Scan |
ot-323sc-70hsmp-381b/c/e/fhsmp-386b/c/e/f+6 | |
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Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . ESD Protection Diode VCUT07B1-HD1 Bidirectional Symmetrical BiSy Single-Line ESD Protection Diode in Ultra-Compact LLP1006-2L Package KEY BENEFITS • Ultra-compact LLP1006-2L package –– Small footprint: 1.0 mm by 0.6 mm |
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vcut07b1-hd1llp1006-2l31-may-12vmn-pt0321-1411 | |
SB220-G
Abstract: SB245-G SB250-G SB260-G SB280-G SB2100-G
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sb220-gsb2100-gdo-41ul94-v0+9 | |
SB320-G
Abstract: SB345-G SB350-G SB360-G SB380-G SB3100-G
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sb320-gsb3100-gdo-201adul94-v0+9 | |
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Contextual Info: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB120-G Thru. SB1100-G Voltage: 20 to 100 V Current: 1.0 A RoHS Device Features DO-41 -Low drop down voltage. -Metal-Semiconductor junction with guard ring -High surge current capability 1.0 25.4 Min. |
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sb120-gsb1100-gdo-41ul94-v0+5 | |
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Contextual Info: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB220-G Thru. SB2100-G Voltage: 20 to 100 V Current: 2.0 A RoHS Device DO-41 Features -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. .107(2.7) .080(2.0) -High surge current capability |
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sb220-gsb2100-gdo-41ul94-v0+5 | |
SB120-G
Abstract: SB145-G SB150-G SB160-G SB180-G SB1100-G
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sb120-gsb1100-gdo-41ul94-v0+9 | |
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SB550-G
Abstract: SB545-G SB520-G SB560-G SB580-G SB5100-G 5100G
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sb520-gsb5100-gdo-201adul94-v0+10 | |
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Contextual Info: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320E-G Thru. SB3100E-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device DO-201AD Features -Low drop down voltage. -3.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free |
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sb320e-gsb3100e-gdo-201adiec6100-4-2+5 | |
SB320E-G
Abstract: SB345E-G SB350E-G SB360E-G SB380E-G SB3100E-G
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sb320e-gsb3100e-gdo-201adiec6100-4-2+9 | |
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Contextual Info: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320E-G Thru. SB3100E-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device Features DO-201AD -Low drop down voltage. -3.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free |
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sb320e-gsb3100e-gdo-201adiec6100-4-2+5 | |
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Contextual Info: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520E-G Thru. SB5100E-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. -5.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free |
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sb520e-gsb5100e-gdo-201adiec6100-4-2+5 | |
SB545E-G
Abstract: SB520E-G SB550E-G SB560E-G SB580E-G SB5100E-G
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sb520e-gsb5100e-gdo-201adiec6100-4-2+9 | |
SB545Contextual Info: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520-G Thru. SB5100-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. 0.210(5.3) 0.189(4.8) |
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sb520-gsb5100-gdo-201adul94-v0+6 | |
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Contextual Info: ESDAVLC5-4BX4 4-line bidirectional Transil , transient surge voltage suppressor for ESD protection Datasheet − production data Features 2 1 • 4 bidirectional Transil diodes • Breakdown voltage VBR = 5.5 V min. • Low leakage current: < 50 nA GND • Very small PCB area: 0.64 mm2 |
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docid023365 | |
Pnp transistor smd ba rn
Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
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OCR Scan |
q9001-1994icmsh1-20mlpnp transistor smd ba rntransistor marking code 12w sot-23+8 | |
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Contextual Info: SIEMENS Silicon Schottky Diodes • • • • £ BAS 7 0 . General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Available with C E C C quality assessment ESD: Electrostatic discharge sensitive device, observe handling precautions! |
OCR Scan |
q62702-a118ot-23cha07q62702-a730+6 | |