DIODE MARKING CODE 3J Search Results

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

LVJ DIODE

Abstract: ERC38
Contextual Info: ERC 38 ia : Outline Drawings FAST RECOVERY DIODE *1.0 I 1 28MIN — 7.5 — 28 MIN- — : Features 3J£-V ti! • X -f • S Super high speed switching. *. Marking tf Low VF in turn on A5 —3 —K: È Color code : White « iW iS High voltage by mesa design.

a124 es

Abstract: rkm v
Contextual Info: E R D 3 2 3 A * ± 'J : Outline Drawings -K FAST RECOVERY DIODE Features : Marking S u p e r h ig h speed s w itc h in g • ffiVF A5 - 3 - K Color code ; 0 range Low V F B sW i Abridged Large c u rre n t • SSft is-ti ty p e name 5 7. V oltage class

Contextual Info: TO SHIBA 3BH41,3GH41,3JH41 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 3BH41, 3GH41, 3JH41 HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY • A verage Forward Current : I f (AV) —3.0A • Repetitive Peak Reverse Voltage : V rrjv [ = 100—600V •

toshiba diode 3gh

Abstract: 3GH41 3JH41 diode 3gh 3BH41 D0-201AD toshiba month code MARK diode general semiconductor TOSHIBA RECTIFIER
Contextual Info: TOSHIBA 3BH41#3GH41#3JH41 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 3BH41, 3GH41, 3JH41 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY • Average Forward Current • Repetitive Peak Reverse Voltage • Reverse Recovery Time !F(AV) =3.0A

W16 sot 23

Abstract: W16 marking code sot 23 CMPZDA33V dual zener dual zener common anode MARKING CODE R7 DIODE diode zener marking 58 marking w13 marking codes ON w16 marking code
Contextual Info: Central CMPZDA2V4 THRU CMPZDA47V TM Semiconductor Corp. SURFACE MOUNT DUAL, SILICON ZENER DIODE 2.4 VOLTS THRU 47 VOLTS 350mW DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZDA2V4 Series silicon dual zener diode is a high quality voltage regulator, connected in a

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

IRF5820

Abstract: IRF5800 IRF5810 SI3443DV IRF5851
Contextual Info: PD -94198A IRF5810 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -20V 90@VGS = -4.5V -2.9A 135@VGS = -2.5V -2.3A Description These P-channel HEXFET® Power MOSFETs from

IRF5852

Abstract: IRF5800 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF5820
Contextual Info: PD - 93999A IRF5852 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (W) ID 20 V 0.090@VGS = 4.5V 0.120@VGS = 2.5V 2.7A 2.2A Description These N-channel MOSFETs from International Rectifier

IRF5820

Abstract: IRF5800 IRF5804 SI3443DV IRF5851 IRF5806 irf5852 sot-23 MARKING CODE 3d
Contextual Info: PD - 94333A IRF5804 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from

IRF5820

Abstract: IRF5800
Contextual Info: PD - 93850A IRF5800 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge D A D 1 6 2 5 3 4 VDSS = -30V D G D S RDS on = 0.085Ω Top View Description These P-channel MOSFETs from International Rectifier

IRF5820

Abstract: SI3443DV IRF5800 IRF5850
Contextual Info: PD - 93947A IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier

marking code 18 surface mount diode

Abstract: HBM Memory sot953 MARKING CODE CY CMNTVS12V
Contextual Info: CMNTVS12V SURFACE MOUNT UNI-DIRECTIONAL 12 VOLT SILICON QUAD TVS ARRAY w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNTVS12V is a 4-line TVS arrays in a space saving SOT-953 surface mount package. This device is designed to

CMNTVS12V

Contextual Info: CMNTVS12V SURFACE MOUNT UNI-DIRECTIONAL 12 VOLT SILICON QUAD TVS ARRAY w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNTVS12V is a 4-line TVS arrays in a space saving SOT-953 surface mount package. This device is designed to

IRF5820

Abstract: IRF5806 IRF5800 SI3443DV 3D marking sot23 sot-23 Marking 3D
Contextual Info: PD - 93997A IRF5806 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier

Contextual Info: PD -94029A IRF5805 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.0A Description These P-channel MOSFETs from International Rectifier

Contextual Info: PD - 93997A IRF5806 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -3.0A Description These P-channel MOSFETs from International Rectifier

IRF5805

Abstract: SI3443DV TSOP6 Marking Code 17 IRF5820
Contextual Info: PD -94029A IRF5805 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier

kl6 r4

Abstract: S4 DIODE schottky sot 23 B5819WS S4 BAS70WT MARKING S4 diode schottky L47C SOT23 marking sk SOD-323 marking R8 sot 23 marking code s7 KL8 SOT-23
Contextual Info: MCC TM Micro Commercial Components SMALL SIGNAL SCHOTTKY DIODES MCC Part Number Marking Code Peak Reverse Voltage PRV V Maximum Reverse Current IR µA Maximum Forward Voltage Drop VF @ IF mV mA Surge Current Capacitance IFSM mAdc CTOT pF 1000 1000 1000 1000

IRF5851

Abstract: n-p channel mosfet tsop6 IRF5800 SI3443DV TSOP 66 Package thermal resistance sot-23 MARKING CODE G1 variac
Contextual Info: PD-93998B IRF5851 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description These N and P channel MOSFETs from International Rectifier utilize advanced

diode marking 74

Abstract: marking D3 SOT26
Contextual Info: CMXSH-3 Central TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM TRIPLE ISOLATED SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXSH-3 type contains three 3 Isolated Schottky Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a