DIODE MARKING 8L Search Results

Diode LT 02

Abstract: ERB83-006 T460 T760 T930
Contextual Info: ERB83-006 2A : Outline D raw ings SCHOTTKY BARRIER DIODE : Features • vF : Marking Low VF Ä7-3-K : £R Super high speed switching. Color code : •SÄJfcS High reliability by planer design Abridged type name Voltage cioss Oy rnq : Applications Lot No.

zener diode 4.7V

Abstract: marking h2 SOD-323 ZENER Zener Diode SOD-323 marking code 2b marking 2h SOD-323 ZENER A25 ZENER DIODE E1 sod323 diode marking code 2E zener diode 4.7V current rating diode F4 8a marking code 8A
Contextual Info: Surface Mount Zener Diode MMSZ52XXBS Series A suffix of "-C" specifies halogen-free 200mW, SOD-323 Electrical Characteristics @ T A=25 C unless otherwise specified Zener Voltage Range Note 1 Type Number Marking Code Nom V 2.4 2.5 2.7 3.0 3.3 3.6 3.9 4.3

marking 2U 77 diode

Abstract: marking DIODE 2U 04 marking code IAM 12CT ERC84-009 diode marking code 7-7-7-7 marking 2U diode marking DIODE 2U
Contextual Info: ERC84-009I3A K • fl- B '+ ii : Outline Drawings SCHOTTKY BARRIER DIODE Features • 1&VF Low VF W$z7j\ : Marking Ä 7 “- 3 - K : f f Color code : Blue Super high speed switching. • 7 V - * - f t « C J&ftflH Ktt High reliability by planer design. Abridged type nam e'"'" Î 1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD MISWB3x2-8L Power management Dual-transistors CJ5853DDC P-channel MOSFET and Schottky Diode MISWB3×2-8L P0.65T0.75 FEATURES • Featuring a MOSFET and Schottky Diode • Independent Pinout to each Device to Ease Circuit Design

Analog devices marking Information

Abstract: AECQ100 BAS52 8l marking PR001 analog devices marking
Contextual Info: Integrated Precision Battery Sensor for Automotive System ADuC7032-8L Silicon Anomaly This anomaly list describes the known bugs, anomalies, and workarounds for the ADuC7032-8L integrated precision battery sensor. The anomalies listed apply to all ADuC7032-8L packaged material branded as follows:

Analog devices marking Information

Abstract: "Analog devices" marking Information DIODE marking 8L analog devices marking AECQ100 BAS52 8l marking
Contextual Info: Integrated Precision Battery Sensor for Automotive System ADuC7032-8L Silicon Anomaly List This anomaly list describes the known bugs, anomalies, and workarounds for the ADuC7032-8L integrated precision battery sensor. The anomalies listed apply to all ADuC7032-8L packaged material branded as follows:

Contextual Info: MMBD2837/8LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA MONOLITHIC DUAL SWITCHING DIODE Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Rating Characteristic Symbol 2837 2838 Unit Reverse Voltage VR 35 50 Vdc Peak Reverse Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD MISWB3x2-8L Power Management MOSFETS-Schottky CJ5853DDC P-channel MOSFET and Schottky Barrier Diode MISWB3×2-8L P0.65T0.75 FEATURES • Featuring a MOSFET and Schottky Diode • Independent Pinout to Each Device to Ease Circuit Design

mosfet 2g2

Abstract: H9926CTS H9926TS mark 6A N-channel code TS
Contextual Info: HI-SINCERITY Spec. No. : MOS200513 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9926TS / H9926CTS Dual N-Channel Enhancement-Mode MOSFET 20V, 6A 8-Lead Plastic TSSOP-8L Package Code: TS H9926TS Symbol & Pin Assignment

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD MISWB3x2-8L Power Management MOSFETs-Schottky CJ5853DDC P-channel MOSFET and Schottky Barrier Diode MISWB3×2-8L FEATURES z Independent Pinout to Each Device to Ease Circuit Design z Ultra low VF z Including a CJ2301 MOSFET and a MBR0520 Schottky

Analog devices marking Information

Abstract: marking wu AECQ100 BAS52
Contextual Info: Integrated Precision Battery Sensor for Automotive System ADuC7032-8L Silicon Anomaly This anomaly list describes the known bugs, anomalies, and workarounds for the ADuC7032-8L/ADuC7032-88 integrated precision battery sensor. The anomalies listed apply to all ADuC7032-8L/ADuC7032-88 packaged material branded as follows:

W1646

Abstract: MSOP-8L diode code yw
Contextual Info: Specification for release Customer : Ordercode: Description: Package: 82401646 TVS Diode Array WE-TVS MSOP-8L DATUM / DATE : 2010-09-24 A Features B Schematic and Pin Configuration: • ESD Protection for Super Speed Differential Signaling above 5Gb/s channels like USB 3.0

Contextual Info: New Product SiJ484DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0063 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21

4810 mosfet

Contextual Info: New Product SiJ458DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0022 at VGS = 10 V 60 0.0026 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 40.6 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21

Contextual Info: AP1601 Step-Up DC/DC Converter „ Features „ General Description -A Guaranteed Start-Up from less than 0.9 V. -High Efficiency. -Low Quiescent Current. -Less Number of External Components needed. -Low Ripple and Low Noise. -Space Saving Packages: MSOP-8L and

1N4148

Abstract: 1N5819 AP1601 MBR0520 MBR0530 MSOP-10L
Contextual Info: AP1601 Step-Up DC/DC Converter „ Features „ General Description -A Guaranteed Start-Up from less than 0.9 V. -High Efficiency. -Low Quiescent Current. -Less Number of External Components needed. -Low Ripple and Low Noise. -Space Saving Packages: MSOP-8L and

SQJ463EP-T1-GE3

Abstract: SQJ463 SQJ463EP NC2030
Contextual Info: SQJ463EP Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) at VGS = - 10 V 0.010 RDS(on) (Ω) at VGS = - 4.5 V 0.015 ID (A) - 11 Configuration Single PowerPAK SO-8L Single S m 5m 6.1 • Halogen-free According to IEC 61249-2-21

Contextual Info: SQJ461EP Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) at VGS = - 10 V 0.015 RDS(on) (Ω) at VGS = - 4.5 V 0.020 ID (A) - 8.6 Configuration Single PowerPAK SO-8L Single S m 5m 6.1 • Halogen-free According to IEC 61249-2-21

SQJ456EP-T1-GE3

Abstract: SQJ456EP
Contextual Info: SQJ456EP Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) at VGS = 10 V 0.028 RDS(on) (Ω) at VGS = 6 V 0.033 ID (A) 9.1 Configuration Single D PowerPAK SO-8L Single m 5m 6.1 • Halogen-free According to IEC 61249-2-21

Contextual Info: SQJ456EP Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) at VGS = 10 V 0.028 RDS(on) (Ω) at VGS = 6 V 0.033 ID (A) 9.3 Configuration Single D PowerPAK SO-8L Single m 5m 6.1 • Halogen-free According to IEC 61249-2-21

Contextual Info: SQJ461EP Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) at VGS = - 10 V 0.015 RDS(on) (Ω) at VGS = - 4.5 V 0.020 ID (A) - 8.6 Configuration Single PowerPAK SO-8L Single S m 5m 6.1 • Halogen-free According to IEC 61249-2-21

Contextual Info: SQJ402EP www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES • • • • PRODUCT SUMMARY VDS (V) 100 RDS(on) () at VGS = 10 V 0.0110 RDS(on) () at VGS = 4.5 V 0.0140 ID (A) 32 Configuration Single D PowerPAK SO-8L Single

BC547 sot package sot-23

Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

TDFN-08

Abstract: ESD Diodes dap 6 HV Diode tDFN 2mm 6pin D3 017 6PIN
Contextual Info: PRELIMINARY CM1240 Dual-Voltage ESD Protection Array for USB Port Features • • • • • • • • channel of the CM1240 is a high voltage HV diode which has a capacitance of 25pF enabling it to protect power supply inputs or OLED power rails, etc.