DIODE MARKING 8L Search Results

marking A7s

Abstract: siemens em 350 99 DIODE marking 351
Contextual Info: SIEMENS Silicon Switching Diode Array BAV 99 Features • For high-speed switching • Connected in series Type Marking Ordering Code tape and reel BAV 99 A7s Q68000-A549 Pin Configuration Package1) SOT-23 3 ¿— EH I IX ° P U 07005 Maximum Ratings per Diode

Diode LT 02

Abstract: ERB83-006 T460 T760 T930
Contextual Info: ERB83-006 2A : Outline D raw ings SCHOTTKY BARRIER DIODE : Features • vF : Marking Low VF Ä7-3-K : £R Super high speed switching. Color code : •SÄJfcS High reliability by planer design Abridged type name Voltage cioss Oy rnq : Applications Lot No.

zener diode 4.7V

Abstract: marking h2 SOD-323 ZENER Zener Diode SOD-323 marking code 2b marking 2h SOD-323 ZENER A25 ZENER DIODE E1 sod323 diode marking code 2E zener diode 4.7V current rating diode F4 8a marking code 8A
Contextual Info: Surface Mount Zener Diode MMSZ52XXBS Series A suffix of "-C" specifies halogen-free 200mW, SOD-323 Electrical Characteristics @ T A=25 C unless otherwise specified Zener Voltage Range Note 1 Type Number Marking Code Nom V 2.4 2.5 2.7 3.0 3.3 3.6 3.9 4.3

marking 2U 77 diode

Abstract: marking DIODE 2U 04 marking code IAM 12CT ERC84-009 diode marking code 7-7-7-7 marking 2U diode marking DIODE 2U
Contextual Info: ERC84-009I3A K • fl- B '+ ii : Outline Drawings SCHOTTKY BARRIER DIODE Features • 1&VF Low VF W$z7j\ : Marking Ä 7 “- 3 - K : f f Color code : Blue Super high speed switching. • 7 V - * - f t « C J&ftflH Ktt High reliability by planer design. Abridged type nam e'"'" Î 1

Mosfet

Abstract: SSF2122E
Contextual Info: SSF2122E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 15.2mohm(typ.) ID 7A ① DFN 3x3-8L Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and

diode TA 20-08

Abstract: P-channel Trench MOSFET MOSFET with Schottky Diode schottky diode 100A DIODE marking 8L MOSFET 20V 100A Bi-Directional P-Channel mosfet
Contextual Info: SPC4703 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC4703combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an DFN3X2-8L package. The Trench MOSFET is the P-Channel enhancement mode power

Mosfet

Contextual Info: SSF3056C 30V Complementary MOSFET Preliminary Main Product Characteristics NMOS PMOS D1 S1 NMOS VDSS 30V -30V D1 G1 D2 S2 PMOS RDS(on) 37mohm(typ.) 68mohm(typ.) ID 5A D2 G2 -4.5A Schematic Diagram DFN2X3-8L Features and Benefits   Advanced trench MOSFET process technology

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD MISWB3x2-8L Power management Dual-transistors CJ5853DDC P-channel MOSFET and Schottky Diode MISWB3×2-8L P0.65T0.75 FEATURES • Featuring a MOSFET and Schottky Diode • Independent Pinout to each Device to Ease Circuit Design

Analog devices marking Information

Abstract: AECQ100 BAS52 8l marking PR001 analog devices marking
Contextual Info: Integrated Precision Battery Sensor for Automotive System ADuC7032-8L Silicon Anomaly This anomaly list describes the known bugs, anomalies, and workarounds for the ADuC7032-8L integrated precision battery sensor. The anomalies listed apply to all ADuC7032-8L packaged material branded as follows:

WS2.8-8LVU

Abstract: ipc-SM-782 27BSC Wayon RJ45 LAN ESD
Contextual Info: Document: W0301005, Rev: C WS2.8-8LVU Transient Voltage Suppressor Features z 600 Watts peak pulse power tp=8/20 s z Protects Four Line Pairs (Eight lines) z Low capacitance z Low leakage current z Low operating and clamping voltage z Solid-state Punch through Avalanche TVS process technology

Analog devices marking Information

Abstract: "Analog devices" marking Information DIODE marking 8L analog devices marking AECQ100 BAS52 8l marking
Contextual Info: Integrated Precision Battery Sensor for Automotive System ADuC7032-8L Silicon Anomaly List This anomaly list describes the known bugs, anomalies, and workarounds for the ADuC7032-8L integrated precision battery sensor. The anomalies listed apply to all ADuC7032-8L packaged material branded as follows:

Contextual Info: MMBD2837/8LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA MONOLITHIC DUAL SWITCHING DIODE Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Rating Characteristic Symbol 2837 2838 Unit Reverse Voltage VR 35 50 Vdc Peak Reverse Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD MISWB3x2-8L Power Management MOSFETS-Schottky CJ5853DDC P-channel MOSFET and Schottky Barrier Diode MISWB3×2-8L P0.65T0.75 FEATURES • Featuring a MOSFET and Schottky Diode • Independent Pinout to Each Device to Ease Circuit Design

Mosfet

Abstract: SSF3036C
Contextual Info: SSF3036C 30V Complementary MOSFET Main Product Characteristics NMOS PMOS VDSS 30V -30V RDS on 32.4mohm 61.6mohm ID 4A -3.6A N-Channel Mosfet P-Channel Mosfet Schematic Diagram DFN 3x2-8L Bottom View Features and Benefits   Advanced Process Technology

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD MISWB3x2-8L Power Management MOSFETs-Schottky CJ5853DDC P-channel MOSFET and Schottky Barrier Diode MISWB3×2-8L FEATURES z Independent Pinout to Each Device to Ease Circuit Design z Ultra low VF z Including a CJ2301 MOSFET and a MBR0520 Schottky

Contextual Info: Integrated Precision Battery Sensor for Automotive System ADuC7032-8L Silicon Anomaly This anomaly list describes the known bugs, anomalies, and workarounds for the ADuC7032-8L/ADuC7032-88 integrated precision battery sensor. The anomalies listed apply to all ADuC7032-8L/ADuC7032-88 packaged material branded as follows:

Analog devices marking Information

Abstract: marking wu AECQ100 BAS52
Contextual Info: Integrated Precision Battery Sensor for Automotive System ADuC7032-8L Silicon Anomaly This anomaly list describes the known bugs, anomalies, and workarounds for the ADuC7032-8L/ADuC7032-88 integrated precision battery sensor. The anomalies listed apply to all ADuC7032-8L/ADuC7032-88 packaged material branded as follows:

W1646

Abstract: MSOP-8L diode code yw
Contextual Info: Specification for release Customer : Ordercode: Description: Package: 82401646 TVS Diode Array WE-TVS MSOP-8L DATUM / DATE : 2010-09-24 A Features B Schematic and Pin Configuration: • ESD Protection for Super Speed Differential Signaling above 5Gb/s channels like USB 3.0

H8205A

Abstract: *8205a H-8205A
Contextual Info: HI-SINCERITY Spec. No. : MOS200905 Issued Date : 2009.02.27 Revised Date : 2010.06.30 Page No. : 1/4 MICROELECTRONICS CORP. H8205A Dual N-Channel Enhancement-Mode MOSFET 20V, 6A 8-Lead Plastic TSSOP-8L Package Code: TS H8205A Symbol & Pin Assignment Description

Contextual Info: New Product SiJ484DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0063 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21

4810 mosfet

Contextual Info: New Product SiJ458DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0022 at VGS = 10 V 60 0.0026 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 40.6 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiJ420DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0026 at VGS = 10 V 50 0.0032 at VGS = 4.5 V 50 VDS (V) 20 Qg (Typ.) 28.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiJ400DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.004 at VGS = 10 V 32 0.005 at VGS = 4.5 V 32 VDS (V) 30 Qg (Typ.) 45 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21

Contextual Info: AP1601 Step-Up DC/DC Converter „ Features „ General Description -A Guaranteed Start-Up from less than 0.9 V. -High Efficiency. -Low Quiescent Current. -Less Number of External Components needed. -Low Ripple and Low Noise. -Space Saving Packages: MSOP-8L and