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SIJ484DP Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIJ484DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 35A PPAK SO-8L	Original	PDF		9

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Vishay Intertechnologies


Vishay Intertechnologies SIS402DN-T1-GE3 MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8
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TTI	SIS402DN-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.82	Buy Now
Vishay Intertechnologies SIJ484DP-T1-GE3 Power Field-Effect Transistor
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Vyrian	SIJ484DP-T1-GE3		240			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SIJ484DP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: New Product SiJ484DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0063 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21	Original	sij484dp 2002/95/ec sij484dp-t1-ge3 18-jul-08	PDF
Contextual Info: New Product SiJ484DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0063 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21	Original	sij484dp 2002/95/ec sij484dp-t1-ge3 11-mar-11	PDF
Contextual Info: New Product SiJ484DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0063 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21	Original	sij484dp 2002/95/ec sij484dp-t1-ge3 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: SPICE Device Model SiJ484DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sij484dp 18-jul-08	PDF
7513 Abstract: 7937 AN609 Cauer 9836-1 Contextual Info: SiJ484DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	sij484dp an609 31-mar-09 7513 +37937 cauer 9836-1	PDF
Contextual Info: New Product SiJ484DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0063 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21	Original	sij484dp 2002/95/ec sij484dp-t1-ge3 2011/65/eu +112-mar-12	PDF