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    SIJ484DP Search Results

    SIJ484DP Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIJ484DP-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 35A PPAK SO-8L Original PDF 9
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    Vishay Siliconix SIJ484DP-T1-GE3

    MOSFET N-CH 30V 35A PPAK SO-8
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    DigiKey SIJ484DP-T1-GE3 Reel
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    Vishay Intertechnologies SIS402DN-T1-GE3

    MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8
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    Vishay Intertechnologies SIJ484DP-T1-GE3

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    Vyrian SIJ484DP-T1-GE3 1,119
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    SIJ484DP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: New Product SiJ484DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0063 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21


    Original     		SiJ484DP 2002/95/EC SiJ484DP-T1-GE3 18-Jul-08 PDF

    Contextual Info: New Product SiJ484DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0063 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21


    Original     		SiJ484DP 2002/95/EC SiJ484DP-T1-GE3 11-Mar-11 PDF

    Contextual Info: New Product SiJ484DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0063 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21


    Original     		SiJ484DP 2002/95/EC SiJ484DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SPICE Device Model SiJ484DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiJ484DP 18-Jul-08 PDF

    7513

    Abstract: 7937 AN609 Cauer 9836-1
    Contextual Info: SiJ484DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		SiJ484DP AN609, 31-Mar-09 7513 7937 AN609 Cauer 9836-1 PDF

    Contextual Info: New Product SiJ484DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0063 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21


    Original     		SiJ484DP 2002/95/EC SiJ484DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF