DIODE MARKING 226 Search Results

Contextual Info: 1N4148WSFL-G www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode 2 1 • Fast switching diodes • Base P/N-G3 - green, commercial grade 1 = Cathode 2 = Anode 22611 MARKING example only XY 22610

1N4148WS

Contextual Info: Diode Silicon Epitaxial Switching Diode Feature: • Fast Switching Diode. Marking 1N4148WS= A2 with cathode band. Absolute Maximum Ratings Description Symbol Value Continuous Reverse Voltage VR 75 VRRM 100 *IF AV 150 Surge Forward Current t <1s and Tj = 25°C

A6 sot-23

Abstract: BAS16 sot-23 cd 5411 marking 855 sot 353 MARKING 358 sot-23 BAS16
Contextual Info: BAS16 SOT 23 High Speed Switching Diodes Feature: • Silicon Planar Epitaxial High-Speed Diode. Package Outline Details Marking BAS16 = A6 Pin configuration 1 = Anode 2 = NC 3 = Cathode Dimensions : Millimetres Absolute Maximum Ratings Limiting values Symbol

VCUT07B1-HD1

Abstract: VCUT07B1
Contextual Info: VCUT07B1-HD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code

Contextual Info: VCUT07B1-HD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code

Contextual Info: SIEMENS BAR 81W Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss EHA0702D Type Marking Ordering Code Pin Configuration BAR 81W BBs 1 = A1 2 = C2 3 = A2 4 = C1 SOT-343

1PS226

Abstract: PS226 SC59 SMD MARKING CODE M 4 Diode MARKING CODE c3t high speed double diode
Contextual Info: W AMER PHILIPS/DISCRETE bTE D m bbSBTBl 00E71D? 5TÔ B 1 A P X P relim in ary sp e c ific atio n P hilips S e m ic o n d u c to rs H igh sp eed d o u b le d io d e FEATURES 1P S 226 QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode

Contextual Info: NTMFS5C612NL Power MOSFET 60 V, 1.5 mW, 226 A, Single N−Channel Features • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free and are RoHS Compliant

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

1am surface mount diode

Abstract: c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f
Contextual Info: ON Semiconductor Bipolar Transistors Bipolar Transistors Continued Plastic-Encapsulated Transistors (Continued) Plastic-Encapsulated Multiple Transistors Plastic-Encapsulated High-Voltage Amplifier Transistors (Case 29-04 Ñ TO-226AA (TO-92) Ñ PNP) hFE @ IC

BS170KL

Abstract: 170KL 2n7000kl equivalent 2N7000KL-TR1 BS170KL-TR1 2N7000KL RG173
Contextual Info: 2N7000KL/BS170KL Vishay Siliconix New Product N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) VGS(th) (V) rDS(on) (W) 2 @ VGS = 10 V 60 TO-226AA (TO-92) G D 1 0.47 1 0 to 2 1.0 2.5 5 4 @ VGS = 4.5 V S ID (A) 0.33 D TrenchFETr Power MOSFET D ESD Protected: 2000 V

Scans-0016000

Contextual Info: MIL SPECS MME D • D0DD1EIS Q D 3 S 2 B 3 2 ■ MILS I inch -pound ~T M1L-S-19500/226B 11 JUNE 1990 SUPERSEDING MIL-S-19500/226A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N3666 1 JAN, JANTX, AND JANTXV This specification Is approved for use by all Depart­

2N7000KL

Abstract: 170KL BS170KL-TR1 2N7000KL-TR1
Contextual Info: 2N7000KL/BS170KL Vishay Siliconix New Product N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) VGS(th) (V) rDS(on) (W) 2 @ VGS = 10 V 60 TO-226AA (TO-92) G D 1 0.47 1 0 to 2 1.0 2.5 5 4 @ VGS = 4.5 V S ID (A) 0.33 D TrenchFETr Power MOSFET D ESD Protected: 2000 V

ZENER 1N5

Abstract: ZENER 1N5 232 1N5 diode Analog devices TOP marking Information Fairchild Diode Marking Change ZENER 1N5 239 diode cross reference ZENER 1N5 230 zener diode cross reference Fairchild Cross Reference
Contextual Info: Absolute Maximum Ratings* Symbol PD Tolerance: B = 5% TA = 25°C unless otherwise noted Parameter Value Units 500 4.0 -65 to +200 mW mW/°C °C TSTG Power Dissipation Derate above 75°C Storage Temperature Range TJ Maximum Junction Operating Temperature + 200

zener smd marking GA

Abstract: S6 SMD zener diode Zener diode smd marking 07 5DL2CZ smd schottky diode s6 CMS11 CMS19 CMG03 marking h01 rf semiconductors
Contextual Info: 2008-8 PRODUCT GUIDE Small and Medium Diodes s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1. Diode Product Tree 3 2. Key Features 4 3. New Small & Medium Diodes 5 4. Selection Guide 6 5. Symbols, Terms and Definitions

BC547 sot package sot-23

Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

MMBF4856

Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

Contextual Info: DSA 70 C 150 HB V RRM = 150 V I FAV = 2x 35 A V F = 0.77 V Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

diode marking 226

Abstract: diode marking b2 HB Electronic Components marking HB diode DSA70C150HB 20100531a
Contextual Info: DSA 70 C 150 HB V RRM = 150 V I FAV = 2x 35 A V F = 0.77 V Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DSA 70 C 150 HB Backside: cathode Features / Advantages: Applications: Package: ● Very low Vf

ph 4148 zener diode

Abstract: ka6 transistor smd Marking Code SMD databook melf diodes color code 4148 TRANSISTOR SMD MARKING CODE w2 GLUE IR-130 smd diode sod-323 marking code L2 smd diode marking 5d SOD-323 SOD-123 a2 4148 TRANSISTOR SMD MARKING CODE 352
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book small signal diodes vishay semiconductors vHN-db1102-0407 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

A2 DIODE

Abstract: DIODE 40c 0644 A5 DIODE MONOLITHIC DIODE ARRAYS marking Z4 TVS 200 diode 63-37 A4 marking diode C 12 PH diode DIODE marking A2
Contextual Info: TVS Diode Arrays TVS Avalanche Diode Array in a Unipolar Chip Scale Package SP0504BAC, SP0508BAC, SP0516BAC This family of avalanche diode arrays are designed for ESD protection and offered in an ultra small chip scale package. The multi-channel devices are used to help protect sensitive digital or

MARKING 358 sot-23

Abstract: diode schottky sot-23 marking l44 sot-23 marking 34 diode SCHOTTKY diode marking 45 schottky diode bat54 l44 sot-23 Marking L43 BAT54 BAT54A BAT54C
Contextual Info: BAT54- Series Features: • • • • Fast switching speed. Surface mount package ideally suited for automatic insertion. For general purpose switching applications. High conductance. SOT-23 Dimensions : Inches Millimetres BAT54 Marking: LV3 BAT54A Marking: B6

Contextual Info: Product specification Philips Semiconductors Schottky barrier double diodes FEATURES BAS70W series PINNING • Low forward voltage BAS70 PIN • High breakdown voltage • Guard ring protected • Very small S M D package • Low capacitance. W -04W -05W