DIODE LT 209 Search Results

749022016

Abstract: 749022017 SMBJ58A
Contextual Info: DEMO MANUAL DC2093A LT4275/LT4321 LTPoE+/IEEE 802.3at/ IEEE 802.3af Compliant Powered Device Interface Description Demonstration circuit 2093A features the LT 4275, a fourth generation powered device PD controller and the LT4321, an ideal diode bridge controller for Power over

Contextual Info: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

ITB68

Contextual Info: S E M IT R O N I N D U S T R I E S LT D 4 3E J> m B 137&&1 O O O O lb ? 4 E3 SLCB L7SERIES Hermetically Sealed Metal Packaged •Surge Suppressor Diode Voltage Range 5VI to 200 Volts 25 Watt Steady State ■1500 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

MRD510

Abstract: MRD500 motorola MRD500 photo detectors convex lens 250 mw ultra stable diode
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MRD500 MRD510 P h o to D e te c to rs Diode Output PHOTO D E T E C T O R S DIO DE O U TP U T PIN SILICO N 250 M ILLIW A TTS 100 V O LT S . . . d e sig n e d fo r a p p lic a tio n in laser d e te c tio n , lig h t d e m o d u la tio n , d e te c tio n o f v is ib le

mbr3545

Abstract: MBR3535 MBR3545H
Contextual Info: MBR3520 MBR3535 MBR3545, H, HI M M O T O R O L A S E M IC O N D U C T O R S PO B O X 20912 • P H O E N IX . A R I Z O N A 85036 SCHOTTKY BARRIER RECTIFIERS S W IT C H M O D E P O W E R R E C T IF IE R S 3 5 A M P ER E S 2 0 to 4 5 VOLTS . . . using a platinum barrier metal in a large area metal-to-silicon

MR2520L

Abstract: C159M
Contextual Info: 6 3 6 7 2 55 MOTOROLA SC M O T O R O L _59C 6 1 8 6 6 D T“- / / - 2 3 j Mrjfc.3t.72SS O O b l ö b b 3 <D I O D E S /OPTO A MR2520L MR2525L SEM ICO N D U CTO RS P.O. BOX 20912 • PHOENIX, A RIZO NA 85036 OVERVOLTAGE TR A N S IEN T SUPPRESSORS OVERVOLTAGE

Contextual Info: International IG R Rectifier PD - 9.1343A IRFP140N PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = "100 V RüS on = 0.052Î2 lD = 33A

Contextual Info: Ordering number: ENN6645 P-Channel Silicon MOSFET 3LP01C Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching, 2091A • 2.5V drive. [3LP 01C ] 0.16 r-fl |c0 to 0.1 ÏJ 1 : G ate

Contextual Info: I Ordering number : ENNSSW N-Channel Silicon MOSFET 5HN01C ISMÊYOi Ultrahigh-Speed Switching Applications Package Dimensions Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. unit : mm 2091A [5H N 0 1C ] 0.4 0.16, ^ = 3 .Oto 0.1

Q-67100-H6341

Abstract: star delta wiring diagram with timer UTC 2025 datasheet 60119 "Aplication Notes" aplication note remote control EPIC-1 MON-8L ps2 controller UTC 2025
Contextual Info: Since April 1, 1999, Siemens Semiconductor is Infineon Technologies. The next revision of this document will be updated accordingly. ATTENTION ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 4.3 User’s Manual 02.95 PEB 2091 V4.3

LT 745 S

Abstract: tunnel diode General Electric
Contextual Info: 1. T e s t R e s u lt s A. Life Test Results Table 1 shows the life test results of B Series C 2MOS IC. B Series is classified into SSI Family less than 100 transistors and MSI Family (More than transistisqrs) . T a b le 1 TYPE TEST ITEMS High Temp. DC Bias

irg4bc30ud

Abstract: BH rn transistor
Contextual Info: International Iö R Rectifier PD 9.1453A IRG4BC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

Contextual Info: TAIWAN LITON ELECTRONIC ‘ITE D ', LITEM ï T-l 3 m m • SSBSb^S S O L I D D G 0 3 4 b 0 “¡5 7 ■ T L I T S T A T E L T L -209 R E D LTÌ .-219 B R I G H T R E D L T L -229 EFFICIENCY R E D L A M P S L T L -239 G R E E N L T L -259 Y E L L O W U\-z\

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using

haw 25-p

Abstract: IRG4PC50KD IRG4PC50 91582 irg4p*50kd diode lt 247
Contextual Info: PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features ● ● ● ● Short Circuit Rated UltraFast IGBT C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz, and Short Circuit Rated

IRG4PC50KD

Abstract: haw 25-p IRG4PC50
Contextual Info: PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features ● ● ● ● Short Circuit Rated UltraFast IGBT C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz, and Short Circuit Rated

1SV149

Contextual Info: TOSHIBA 1SV 149 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 49 Unit in mm AM RADIO BAND TUNING APPLICATIONS 4.2MAX. • High Capacitance Ratio : C iy /C g y = 15 Min. • High Q : Q = 200 (Min.) • Small Package • Low Voltage Operation

IRG4PC30UD

Contextual Info: International I R Rectifier P D 9.1462A IRG4PC30UD PRELIMINARY INSULATED GATE BIPOLAR TR A N SIST O R WITH ULTRAFAST SO FT R E C O V E R Y DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

motorola mc14511b

Abstract: MC14511B "MOTOROLA CMOS LOGIC DATA" of mc14511b semiconductors bi 370 AN84-21 Motorola MC14070B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14511B BCD-To-Seven Segment Latch/Decoder/Driver L SUFFIX CERAMIC CASE 620 The MC14511B BCD–to–seven segment latch/decoder/driver is constructed with complementary MOS CMOS enhancement mode devices and NPN bipolar output drivers in a single monolithic structure. The circuit

marking code KC SMB

Abstract: SMBJ25A marking NX TVS DO-214AA smbj0 SMBJ23 SJ 76 TVS dIODE diode GU do-214aA DIODE UF marking code smb marking mp SMBJ12A
Contextual Info: TAIWAN SEMICONDUCTOR SMBJ SERIES 600 Watts Surface Mount Transient Voltage Suppressor S MB/DO-214A A RoHS COM PLIANCE Features_ «• For su rfa ce m ou n te d a p p lica tio n <■ L o w p ro file p a c k a g e B u ilt-in s tra in r e lie f

powerex cd

Contextual Info: POWEREX INC 1SE D m 72T4bSl 00Ü34S1 3 • 7^-25-23 fOMÆYlEY CD4B _ 60 C D 4C 60 Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 92 5-7272 Powerex Europe, S. A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 SCR/Diode

LT1174

Abstract: 117450 1174h5 CTX50-4 LTC1174HV 1N5818 LTC1148 LTC1174 LTC1174-5 avx 472k
Contextual Info: LTC1174 LTC1174-3.3/LTC1174-5 High Efficiency Step-Down and Inverting DC/DC Converter U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1174 is a simple current mode DC/DC converter ideally suited for 9V to 5V, 5V to 3.3V or 5V to – 5V

Contextual Info: um LT1109 TECHNOLOGY Micropower Low Cost DC/DC Converter Adjustable and Fixed 5V, 12V FCRTURCS DCSCRIPTIOfl • Uses Off-the-Shelf Inductors ■ Only 33ixH Inductor Required ■ Low Cost ■ 3-Lead TO-92, S08, or 8-Pin DIP ■ Adjustable or Fixed 5V or 12V Output

472K ceramic capacitor

Abstract: 117450 117-4f MKS2 1N5818 LTC1148 LTC1174 LTC1174-5 1174HI wima capacitor 100uf
Contextual Info: LTC1174 LTC1174-3.3/LTC1174-5 High Efficiency Step-Down and Inverting DC/DC Converter U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 1174 is a simple current mode DC/DC converter ideally suited for 9V to 5V, 5V to 3.3V or 5V to – 5V