DIODE LT 209 Search Results

749022016

Abstract: 749022017 SMBJ58A
Contextual Info: DEMO MANUAL DC2093A LT4275/LT4321 LTPoE+/IEEE 802.3at/ IEEE 802.3af Compliant Powered Device Interface Description Demonstration circuit 2093A features the LT 4275, a fourth generation powered device PD controller and the LT4321, an ideal diode bridge controller for Power over

1009I

Abstract: LT1009CZ LT317A 1009f 406p LT1019 LM136 LT1009 LT1009CH LT1009I
Contextual Info: LT1009 Series 2.5V Reference FEATURES DESCRIPTION n The LT 1009 is a precision trimmed 2.5V shunt regulator diode featuring a maximum initial tolerance of only ±5mV. The low dynamic impedance and wide operating current range enhances its versatility. The 0.2% reference

LT 8233

Abstract: diode LT 8233 4CM6 U891 L486 D029 U615
Contextual Info: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

Contextual Info: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

Diode LT 209

Abstract: SCR thyristor test
Contextual Info: SGS-IHOMSON MDS50 ly DIODE / THYRISTOR MODULE PRELIMINARY DATASHEET FEATURES • V d RM = V rrm UP TO 1200 V ■ lT AV = 3 5 A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) DESCRIPTIO N The MDS50 family are consist of one rectifier

ITB68

Contextual Info: S E M IT R O N I N D U S T R I E S LT D 4 3E J> m B 137&&1 O O O O lb ? 4 E3 SLCB L7SERIES Hermetically Sealed Metal Packaged •Surge Suppressor Diode Voltage Range 5VI to 200 Volts 25 Watt Steady State ■1500 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

MRD500

Abstract: motorola MRD500 MRD510 laser diode RW
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRD500 MRD510 P h o to D e te c to rs Diode Output PHOTO D E T E C T O R S DIODE O U TP U T PIN SILICO N 250 M ILLIW ATTS 100 V O LT S . . . d e sig n e d fo r a p p lic a tio n in laser d e te ctio n , lig h t d e m o d u la tio n , d e te ctio n o f v is ib le

MRD510

Abstract: MRD500 motorola MRD500 photo detectors convex lens 250 mw ultra stable diode
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MRD500 MRD510 P h o to D e te c to rs Diode Output PHOTO D E T E C T O R S DIO DE O U TP U T PIN SILICO N 250 M ILLIW A TTS 100 V O LT S . . . d e sig n e d fo r a p p lic a tio n in laser d e te c tio n , lig h t d e m o d u la tio n , d e te c tio n o f v is ib le

triac tic 2260

Abstract: NATIONAL LINEAR APLICATION VALVO V42310-Z110 B250C1500 B250C1500 B B80C1000 telequarz B80C800 datasheet LT 735
Contextual Info: ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 4.3 User’s Manual 02.95 PEB 2091 V4.3 Revision History: Previous Releases: Page Original Version: 09.94 02.95 Subjects changes since last revision Update including appendix Data Classification

175BGQ030

Abstract: 175BGQ030J Diode HER 207 N-1001
Contextual Info: PD-20997 rev. D 11/99 175BGQ030 175BGQ030J SCHOTTKY RECTIFIER 175 Amp Major Ratings and Characteristics Characteristics Description/Features The NEW 175BGQ030 Schottky rectifier has been optimized for ultra low forward voltage drop specifically for low voltage output in

mbr3545

Abstract: MBR3535 MBR3545H
Contextual Info: MBR3520 MBR3535 MBR3545, H, HI M M O T O R O L A S E M IC O N D U C T O R S PO B O X 20912 • P H O E N IX . A R I Z O N A 85036 SCHOTTKY BARRIER RECTIFIERS S W IT C H M O D E P O W E R R E C T IF IE R S 3 5 A M P ER E S 2 0 to 4 5 VOLTS . . . using a platinum barrier metal in a large area metal-to-silicon

MTH13N50

Abstract: 3N50 motorola MTH13N50 13N50 MTH15N40 MTH13N45 transistor 13n50 5N35 MTM4N35 DS3651
Contextual Info: P.O. BOX 20912 • PHOENIX, ARIZONA 85036 MTH13N45 MTH13N50 MTH15N35 MTH15N40 D esign er’s D ata Sheet 13 and 15 AMPERES N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR N-CHANNEL TMOS POWER FETs These TMOS Power FETs are designed for medium voltage,

LTH-1550-01

Abstract: sensor LTH 1550-01 LTH 1550-01 IR SENSOR LTH-209-01 1550-01 reflective object sensors
Contextual Info: REFLECTIVE OBJECT SENSORS LTH-20Ô-01 /LTH-1550-01/LTH-1650-01 FEATURE •Non-contact switching. •For direct PC board or dual-in-line socket mounting. •Fast switching speed. •Reflective object sensor. DESCRIPTION The LTH-209-01/LTH-1550-01/LTH-1650-01 reflective object

MR2520L

Abstract: C159M
Contextual Info: 6 3 6 7 2 55 MOTOROLA SC M O T O R O L _59C 6 1 8 6 6 D T“- / / - 2 3 j Mrjfc.3t.72SS O O b l ö b b 3 <D I O D E S /OPTO A MR2520L MR2525L SEM ICO N D U CTO RS P.O. BOX 20912 • PHOENIX, A RIZO NA 85036 OVERVOLTAGE TR A N S IEN T SUPPRESSORS OVERVOLTAGE

Contextual Info: International IG R Rectifier PD - 9.1343A IRFP140N PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = "100 V RüS on = 0.052Î2 lD = 33A

Contextual Info: Ordering number: ENN6645 P-Channel Silicon MOSFET 3LP01C Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching, 2091A • 2.5V drive. [3LP 01C ] 0.16 r-fl |c0 to 0.1 ÏJ 1 : G ate

Contextual Info: I Ordering number : ENNSSW N-Channel Silicon MOSFET 5HN01C ISMÊYOi Ultrahigh-Speed Switching Applications Package Dimensions Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. unit : mm 2091A [5H N 0 1C ] 0.4 0.16, ^ = 3 .Oto 0.1

31136 remote control receiver circuit

Abstract: EPIC-1 G961 iec 2091 IOM2
Contextual Info: ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 4.3 User’s Manual 02.95 PEB 2091 V4.3 Revision History: Previous Releases: Page Original Version: 09.94 02.95 Subjects changes since last revision Update including appendix Data Classification

em 483

Abstract: d2504
Contextual Info: Elt HERMETIC PAIR OP T OE L E CT RONI CS QPAI223 PACKAGE DIMENSIONS .230 5.48 _j .209 (5.31) . .188 (4.78) 180(4.57) .189(4.80) '.1 7 9 (4 .5 5 ) r .070(V78) .055(1.39) .215(5.46) .5 0 5 (5 .2 1 )' r .205 (5.21) .190 4.83) 255 (6.48) MAX _L 030(0 76) T MAX

Q-67100-H6341

Abstract: star delta wiring diagram with timer UTC 2025 datasheet 60119 "Aplication Notes" aplication note remote control EPIC-1 MON-8L ps2 controller UTC 2025
Contextual Info: Since April 1, 1999, Siemens Semiconductor is Infineon Technologies. The next revision of this document will be updated accordingly. ATTENTION ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 4.3 User’s Manual 02.95 PEB 2091 V4.3

la 1201 sanyo

Abstract: ic 8057 block diagram pin diagram of lt 542 1109a
Contextual Info: 7 ' LT1109A M icro p o w e r D C /D C C on ve rter Flash M em ory VPP G e n e ra to r A djustable a n d Fixed 5V, 12V u m TECHNOLOGY F€flTUft€S DCSCMPTIOn • Uses Oft-the-Shelf Inductors The LT1109A is a simple step-up DC/DC converter. The 8pin DIP or SOIC devices require only fourexternal compo­

Diode LT 209

Abstract: CD5530 1N5518B 1N5546B CD5518B CD5519B CD5520B CD5521B CD5522B CD5523B
Contextual Info: • 1N5518B THRU 1N5546B AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/437 • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • ELECTRICALLY EQUIVALENT TO 1N5518B THRU 1N5546B • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING

LT 745 S

Abstract: tunnel diode General Electric
Contextual Info: 1. T e s t R e s u lt s A. Life Test Results Table 1 shows the life test results of B Series C 2MOS IC. B Series is classified into SSI Family less than 100 transistors and MSI Family (More than transistisqrs) . T a b le 1 TYPE TEST ITEMS High Temp. DC Bias

Diode LT 450

Abstract: T1961
Contextual Info: A P ow er T e c h h o lo g y * 1 - Cathoda 2 - Anode Back of Caaa-Cathoda dvanced APT30D20B 200V 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PR O D U C T A P P LIC A T IO N S P R O D U C T F EA T U R E S Anti-Parallal Diode -Switchmode Powar Supply -Invertors