DIODE LT 02 Search Results

IN3595

Abstract: 1N3595
Contextual Info: COMPUTER DIODE 1N3595=JAN- J A N T X & jantxv 1N3595 150 mA, S w itch in g ABSO LUTE MAXIMUM RATINGS, AT 25“C FEATURES Peak Reverse V o lta g e .125V Reverse Breakdown V o lt a g e .150V

1311 amplifier

Abstract: jfet photo diode LT1113 LT1169 LT1215 LT1311 LT1311CS TA03
Contextual Info: LT1311 Quad 12MHz, 145ns Settling Precision Current-to-Voltage Converter for Optical Disk Drives U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1311 is a quad current-to-voltage converter designed for the demanding requirements of photo diode

Contextual Info: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

MB11A02

Abstract: cd7212 Thyristor Modules CD771 thyristor tt 142 n 12 powerex ME30 powerex ME20 powerex ME10 thyristor tt 18 n 800 thyristor TT 18 N 1200
Contextual Info: 7294621 POWE RE X INC TI DE | TaTMbai ODDlflET 5 2,_? Thyristor and Diode Modules GTO Thyristor Modules ITGQ lT AV Tc (Am ps) (Amps) (°C) Vdrm (Volts) (Volts) tq fosee) (Volts) d i/d t (A/fjsec) (mA) 100 20 60 1200 15 8.0 1.5 200 400 GDM1/GDM2 GDM1/GDM21210

RF marking N02

Abstract: MBD7000 BD7000 MMBD2836 MMBD2838 MMBD7000 SOT23 5 MARKING N02 Tj-12 m5c3
Contextual Info: MM BD2836 / MM BD2838 M M B 1 7000 Surface Mount Switching Diode S W IT C H IN G D IO D E I00-200m A M P E R R E S 75-100 V O LT S Features: *Low Current Leakage *Low Forward Voltage ^Reverse Recover Time Trr<4ns *Small Outline Surface Mount SOT-23 Package

DIODE 1N54

Abstract: 1N54 DSAIH0002553
Contextual Info: B ~ lT < n ÏN T t.R N A TIO N A L^ ' ÜBE D 1 1 7 ^ 0 3 □ □□G0L.7 t. | ~ Type No. 1N54 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377 FEATURES Low forward voltage drop— low power consumption

C108T

Abstract: SHINDENGEN DIODE
Contextual Info: K y \ Bridge Diode V S AL; I f l # Thä D4SBAD Single In-line Package OUTLINE DIMENSIONS 800V 4A • » s s iP A É r a ltŒ « ra l FSM v ir - y •SR B S •m m , OA. bbœ • S f f l , « g , FA • Æ tè ü R A T IN G S • Îë S 'jli^ Æ t ë m Absolute Maximum Ratings

Contextual Info: NON-RELAMPABLE LED INDICATOR LIGHT W DIA. MOUNTING HOLE SERIES 1 0 9 1 M FEATURES Solid-State Indicator Lights Complete With Built-in Current-Limiting Resistor and Rectifier Diode Mounting: Will snap-fit into .500/.505 12.70/12.83 dia. hole in panels .020/

4n137

Abstract: ic 7474 pin diagram CAC02 series full bridge inverter 500khz square wave ttl 7474 sine wave AD654 IC Timer Cookbook circuit diagram 4-20ma RECEIVER AD595 IC PIN LAYOUT CORNING CAC02
Contextual Info: ► ANALOG DEVICES AN-278 APPLICATION NOTE ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 Operation and Applications of the AD654IC V-to-F Converter* by Walt Jung INTRODUCTION + VS DEVICE DESCRIPTION The AD654 is a monolithic voltage-to-frequency V/F con­

H100

Contextual Info: m bô 0224S D D Q Q S n OPTO T E CH NO LO GY b INC OPTO TECHNOLOGY R E F L E C T IV E S W IT C H T Y P E OTR 6 5 0 Features • TD-18 reflective sensor ■ .0 3 0 aperture ■ Pho totransistor Description Opto Technology's OTR 650 re­ flective sensor combines two

S41 sensor

Abstract: OTR641 Infrared phototransistor TO18 diameter lens phototransistor sensor s41
Contextual Info: •I bô 022M5 0 Q D D E 1 7 2 « I O T I OPTO T E CH NO LO GY INC M2E B -4 -T> OPTO TECHNOLOGY REFLECTIVE SWITCH T Y P E OTR S 41 Features ■ T O -18 reflective sensor ■ .0 2 0 diameter aperture ■ Phototransistor Description Mark sense reading is accomplished with

Contextual Info: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7W02F/FU Dual 2-Input NOR Gate The TC7W 02 is a high speed C2MOS 2-input NOR Gate fabricated with silicon gate C2MOS technology. It achieves the high speed operation sim ilar to equivalent LSTTL while maintaining the C2MOS low pow er dissipation.

diode 1NU

Abstract: equivalent of diode 1Nu diode 1NU 0 b 1NU 7 1nu toshiba
Contextual Info: TOSHIBA -CDISCRETE/OPTO} Sb DE [ ^ G ^ a S D POWER REGULATOR FOR LINE OPERATED TV APPLICATIONS. DD077Û1 ^ Unit in mm 02&OMAX. FEATURES: a 1.0 MAX . Excellent Vide Safe Operating Area c . 100 W.S at Tc=25°C , 0 1 .0 . Included Abalanche Diode. : Vz=55±10V

H244

Abstract: FAH4 PF340 h.out transistor
Contextual Info: S-fl 0 S S Y S T E M S INC IDE D | 7 T 3 B ‘i D ci 0[]0[]74b *] | rW/ ~ss~ m m m ^ f f l M ÌS l i ì É i É Ì PF340-02 m m Ú B Sáí M OS AREA IMAGE SENSOR • 8 mm Size Solid State Imaging Device • 2 4 4 Horizontal X 244 (Vertical) Photo Sensor

HiNil

Abstract: not gate TSC331 hd 331
Contextual Info: TSC 331 Gate Expander 580 Pleasant Street Watertown, MA 02172 617 924-9280 • Dual 5-Input Features G e n e ral Description • P R O V ID E S 5 A D D IT IO N A L IN P U T S TO E X P A N D A B L E GATES, B U F F E R S A N D O T H ER H iN IL D E V IC E S

1N6510

Abstract: 1N6101 1N6510 JANTX
Contextual Info: 1N6101 and 1N6510 JANTX, JANTXV A Microsemi Company 580 PLEASANT ST. WATERTOWN, MA 02172 PHONE: 617 924-9280 FAX: (617) 924-1235 MIL -PRF-19500/474 Features • • • • • BV ≥ 75 V @ 5 µA IR ≤ 100 nA @ 40 V VF ≤ 1 V @ 100 mA C… 4.0 pF (MAX)

DARLINGTON TRANSISTOR ARRAY

Contextual Info: MA3018•MA3018A•MA3019•MA3026•MA3036 MA3039•HA3045•nA3046•mA3054•mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D ES C R IP T IO N — Fairch ild Transistor and Diode A rrays consist o f general purpose integrated circu it devices constructed

Contextual Info: Half Controlled VHFD 16 Single Phase Rectifier Bridge vRRM = 800 -1600 v ldAVM = 21 A Including Freewheeling Diode and Field Diodes vRSM VR R M v DSM VDRM V V 900 1300 1500 1700 800 1200 1400 1600 Type VHFD VHFD VHFD VHFD 16-08io1 16-12io1 16-14io1 16-16io1

Contextual Info: Ô13bb71 000b4MG ^144 • V drm V rsm V V rrm V Id Tease = 62 °C, full conduction 33 A 300 200 SKB 33/02 500 400 SKB 33/04 700 600 SKB 33/06 900 800 SKB 33/08 1100 1000 SKB 33/10 1300 1200 SKB 33/12 Symbol Conditions Id *q Ih II Vt V t (t o ) rr Id d ;Ir d

Contextual Info: m W H b4E ?5T4b21 □□Obb7E 32fl HPRX E X _ CM300HA-28_ S inale IGBTMOD™ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14

1N6511

Abstract: 1N6100
Contextual Info: A Microsemi Company 580 PLEASANT ST. WATERTOWN, MA 02172 PHONE: 617 924-9280 FAX: (617) 924-1235 1N6100 and 1N6511 JANTX, JANTXV MIL -PRF-19500/474 Features • • • • • BV ≥ 75 V @ 5 µA IR ≤ 100 nA @ 40 V VF ≤ 1 V @ 100 mA C… 4.0 pF (MAX)

Contextual Info: MITSUBISHI INTELLIGENT POWER MODULES PM150RSA060 FLAT-BASE TYPE INSULATED PACKAGE 1. V upc 2. U F o 3. U p 4. V upi 5. V vpc 6. V F o 7. V p 8. V vpi 9. V wpc 10.W FÒ 11. 12. 13. 14. 15. 16. 17. 18. 19. Wp V wpi V nc V ni Br Un Vn Wn Fo Description: Mitsubishi Intelligent Power Mod­

d2s diode series

Abstract: CTX50-1-52 MOTOROLA-1N5819 UPL1V101MPH dn472 DN-47 D2S DIODE schottky LT1172 MUR110 DN47-1
Contextual Info: DESIGN NOTES Switching Regulator Generates Both Positive and Negative Supply with a Single Inductor - Design Note 47 Brian Huffman Many system s require ±12V from a 5V input. Analog or RS-232 driver power supplies are obvious candi­ dates. This requirement is usually solved by using a

"Optical Switch" ots 272

Abstract: optical sensor 1201H
Contextual Info: •I O PTO bfl0224S 0QQ017Ô 7 T E C H N 0 L 0 6 Y INC OPTO TECHNOLOGY OPTICAL SWITCH T Y P E OTS 2 7 2 Features ■ Side mount switch ■ .020 aperture ■ Phototransistor Description The OTS 272 optical switch consists of a GaAs infrared em itter and an NPN silicon