DIODE JS.9 SMD Search Results

DIODE JS.9 smd

Contextual Info: Schottky Barrier Diode Twin Diode m tm OUTLINE Package : STO-220 DF40SC4 u^hàLÌ°- M 40V m U nit-m m W eight 1.5g (T y p ) 10.2 DA Feature a • SMD < • Tj=150°C 1Tj=150°C • P rrsm 1 P rrs m Rating SMD 1 High lo Rating -Small-PKG 4.7 m Main Use

D 92 M - 02 DIODE

Abstract: JS marking diode c 92 M - 02 DIODE
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF20PC3M PyhfLig- ffl Unit-mm Weight 1.5g(Typ) 10.2 30V 20A Feature • SM D • SMD • î 2 ® V f=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-PKG • iJ 'S = À l; jS î § M 4.7

smd diode marking U10

Abstract: Diode marking TY smd diode marking B3 smd diode HB
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF30SC4M u^hàLÌ°- M 40V m Feature a <SMD • Tj=150°C 1Tj=150°C 1 P r r s m Rating 1 High lo Rating -Small-PKG • P rrsm DC/D C 4.7 Main Use it 1Switching Regulator 1DC/DC Converter 1Home Appliance, Game, Office Automation

CIE1931

Contextual Info: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612SYKQWDF-AMT ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Super Bright Yellow White Description The Super Bright Yellow device is made with AlGaInP on GaAs substrate light emitting diode chip.

CIE1931

Contextual Info: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612CGKQWDF-AMT ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Green White Description The Green source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode.

smd ya transistor

Abstract: CIE1931
Contextual Info: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612SURKQWDF-AMT ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Hyper Red White Description The Hyper Red source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode.

smd diode marking sm 34

Contextual Info: Schottky Barrier Diode mtmm Single Diode o u t l in e M2FH3 30V 6A Feature 1Small SMD ' Super-Low V f = 0 .3 6 V • /JvS Ü S M D • tliafîV F = 0.36V Main Use • i K y z r U —jS JS K it • DC/DC n y j { - 5 > • Reverse connect protection for DC power source

spice germanium diode

Abstract: SNW-EQ-611 PXTA14 sot89 JB TRANSISTOR SMD letter CODE PACKAGE SOT23 BSP15 BSP19 BST60 germanium transistor pnp MDA100
Contextual Info: GENERAL Page Quality 2 Pro Electron type numbering system 2 Rating systems 3 Letter symbols 4 S-parameter definitions 7 Equivalent package designators 8 Transistor ratings 8 Thermal considerations 11 Power derating curves for SMDs Power derating curve for SOT23

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE10SC4 Unit-mm Weight 0.326g Typ 40 V 10A Feature • SM D >SMD • Tj=150°C 1Tj=150°C • P r r s m T ’A ' ^ V S ' i f S l i E 1 P r r s m Rating 1 High lo Rating -Small-PKG Main Use

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY DIODES BAT64, BAT64-04 BAT64-05, BAT64-06 SOT-23 Formed SMD Package BAT64 BAT64-04 3 3 3 3 Pin Configurat ion Pin Configurat ion 1 = ANODE 2 = CATHODE

BAT64

Abstract: BAT64-04 BAT64-05 BAT64-06 sot-23 diode marking Av WT sot23 bat64 smd
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY DIODES BAT64, BAT64-04 BAT64-05, BAT64-06 SOT-23 Formed SMD Package BAT64 BAT64-04 3 3 3 3 Pin Configuration Pin Configuration 1 = A N ODE 2 = CATHODE

SMD BR 17

Abstract: bat64 smd BAT64-05 smd JS 5 355 sot-23 BAT64 BAT64-04 BAT64-06 Schottky Diode Marking sot-23 marking 415 sot23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY DIODES BAT64, BAT64-04 BAT64-05, BAT64-06 SOT-23 Formed SMD Package BAT64 BAT64-04 3 3 3 3 Pin Configuration Pin Configuration 1 = A N ODE 2 = CATHODE

DIODE S4 65

Abstract: smd diode a5 smd transistor marking A5 A5 DIODE DIODE marking S4 04 Diode S4 DIODE a5 DIODE marking S4 S4 DIODE smd diode S4
Contextual Info: Diodes SMD Type General purpose PIN diode BAP51-02 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - Low diode capacitance Low diode forward resistance. 0.77max +0.05 0.1-0.02 0.07max +0.1 1.6-0.1 Absolute Maximum Ratings Ta = 25

Contextual Info: P _ SMDA05C-5 S E M T 1 E H H Today’s Results.Tomorrow^ Vision February 11, 1999 300 Watt Surface Mount TVS Array th ru SMDA24C-5 TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com DESCRIPTION FEATURES The SMDAxxC-5 series of transient voltage

Contextual Info: SIEMENS SPU04N60S5 SPD04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity

20n60s5

Abstract: transistor 20N60s5 20n60s5 power transistor n60s5
Contextual Info: SIEMENS SPP20N60S5 SPB20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best R 0S 0n in TO 220 • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances

Contextual Info: SIEMENS SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • W orldw ide best Ros on in TO-251 and TO -252 • Ultra low gate charge • Periodic avalanche proved • Extrem e d v/d t rated • O ptim ized capacitances

FAG 32 diode

Contextual Info: SIEMENS SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity

Contextual Info: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel / n, /S. / • Enhancement mode • Avalanche rated kX VPT09050 VP T0 90 5 1 Pin 1 Pin 2 Pin 3 G D S Type Vds b f î DS on (5) VGS Package Ordering Code SPD02N60 600 V 2A

02N60S5

Abstract: SMD TRANSISTOR MARKING 02N SPD02N60S5
Contextual Info: SIEMENS SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity

Contextual Info: SIEMENS SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity

diode S4 05

Abstract: smd diode S4 diode smd JS 8 BAP51-02
Contextual Info: General purpose PIN diode BAP51 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79 1 CATHODE 2 ANODE

DIODE JS.9 smd

Contextual Info: SIEMENS SPP03N60S5 SPB03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity

BAP51-02

Abstract: smd diode S4 diode S4 05 AS 15 f
Contextual Info: LESHAN RADIO COMPANY, LTD. General purpose PIN diode BAP51 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79