DIODE JR 702 Search Results

2N1479

Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
Contextual Info: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863

ALY TRANSISTOR

Abstract: 40349 40327 ka025 20100 2N4866 BFE 75A transistor 160v 1.5a pnp transistor ALY 2N1479
Contextual Info: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863

Contextual Info: ERC80M-004 5A SCHOTTKY BARRIER DIODE : Features In sulated p a cka g e by fu lly m o ld in g . • te V r L o w V f- • x -f C o n n e c tio n D ia g ra m S u p e r h ig h speed s w itc h in g . • y \y-±-stmt- jr&ftftiitt H igh re lia b ility by p la n e r d e s ig n .

JR224575

Abstract: diode jr 702
Contextual Info: POWEREX 3=]E D I NC TS'iMbSl DGQMSbS b IPRX / o m tE X JQ224575/JQ225075 JR224575/JR225075 P o w e re x , In c ., W ills S tre e t, Y o u n g w o o d , P en n sylvan ia 1 5 6 9 7 4 1 2 9 2 5 -7 2 7 2 Single Chopper FETMOD Power Modules P ow erex Europe, S .A ., 4 2 8 A ven u e G. D urand, B P 107, 7 2 0 0 3 Le Mans, France (4 3 ) 4 1 .1 4 .1 4

n fet 60v 50a

Abstract: 4441 mosfet 4441 equivalent
Contextual Info: F U JI 2SK2809-01 MR N -c h a n n e l M O S -F E T tM L lM E l/U G ilK F A P -IIIB S e r ie s 60 V 0 ,0 1 Q 50A 50W > Features - High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier

psu 300 switch mode power supply

Abstract: optocoupler MTBF calculation 220vac to 12vdc circuit diagram PowerDsine automatic switch over circuit diagram PSU 200 an 7024 h11l1sd "Power over LAN" PD-IM-7024
Contextual Info: PD-IM-7024 Power over LANTM Module Revision 002 Last modified – June 2, 2002 SYSTEM FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ TM Complete, self-contained Power over LAN integrated solution Combines Power over LAN and Power Supply Unit capabilities

D 92 M - 03 DIODE

Contextual Info: F 1 H 5 B - 6 1 5 Q a * ± y =e ^ = l - ) v _ FAST RECOVERY DIODE MODULE : Features Short Reverse Recovery Time • tS IM S lV ft* • Variety of Connection Menu Insulated Type • fflJ i! I A pplications Arc-W elders • 7 l) —Tfr'i —Ji»y4

ZAFI

Contextual Info: 1 FI250B -060 250 a FAST RECOVERY DIODE MODULE • 4# : Features Short Reverse Recovery Time • Variety of Connection M enu • Insulated Type I Applications • Arc-Welders • Kffl • ■ !£-<7)flfc^i> £SI3lEffl Free-Wheeling Diode High Speed Rectifiers

74LS690

Abstract: D04G321
Contextual Info: SbE » • /S T 7^237 DQMD317 10b ■ S G T H _ 7 '-9 S ‘2 S C S -T H O M S O N K K ^ fo m K g M M S 3 tt M 5 4 /7 4 H C 6 9 0 M 5 4 /7 4 H C 6 9 1 HC690 DECADE COUNTER/REGISTER 3-STATE HC691 4-BIT BINARY COUNTER/REGISTER (3-STATE) S G S-THONSON ■ HIGH SPEED

Contextual Info: F U JI eiLSiEirijtìue 2SK2494-01 N-channel MOS-FET F-l Series 60V > Features 0.025Q T O -2 2 0 A B 10 î j ' 4.5 ±oi 03.6t}2 11.32 > Applications U i O.B-O! - Motor Control - General Purpose Power Amplifier - DC-DC converters 254 > Maximum Ratings and Characteristics

ERB81-004

Abstract: ERB81 A347 TI90
Contextual Info: ERB81 -004 1.7A ! * » • + » : O utline D raw ings '> 3 y h * - / < U 7 » W * - K SCHOTTKY BARRIER DIODE ■ t t J t : Features :7j\ Low VF • * -f-y * : M arking XfcT-K Super high speed sw itch in g . • - f\s — t A 7 —3 —K : & Color code '• Silver

Contextual Info: p u jr i 2SK2215-01 L,S N-channel MOS-FET FAP-IIA Series > Features - 600V 1 ,2 Q 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications -

1MBH60D-090A

Abstract: 1MBH60D transistor z5t 150-TC1
Contextual Info: 1MBH60D-090A IGBT I : Outline Drawings in s u l a t e d g a t e b ip o l a r t r a n s is t o r Features • High Speed Switching • flfcliiSWE Low Saturation Voltage • M itt M O s y —HUifc High Impedance Gate • ' j ' S S ' S m a l l Package • £ )& : Applications

30A high speed diode

Contextual Info: TS808C04 30 a '> 3 * y l) 7 ? *< t — K SCHOTTKY BARRIER DIODE : Features Surface m ount device- • i£ V F Low V f Connection Diagram Super high speed sw itching. •yu—t -ttwus Aiiffitt High reliability by planer design. : Applications High speed power sw itching.

Contextual Info: 1-Pack IGBT 1MBI600NP-060 IGBT MODULE N series '& Outline Drawing • Features Square RBSOA • Low Saturation Voltage • Less Total Pow er Dissipation • Im proved F W D Characteristic • Minim ized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times R ated Current)

2SK2759-01R

Contextual Info: FUJI 2SK2759-01R s ta is ir itìu e FAP-IIS Series N-channel MOS-FET 500V 0,55Q 15A 80W > Features - > Outline Drawing TO-3PF High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated

Contextual Info: Fe'iUMçiruâüÉ U JI 2SK2649-01R N-channel MOS-FET FAP-IIS Series 800V 9A High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 55 3.5 > Applications - 0.6 Switching Regulators

rkm 20

Abstract: 2SK2523-01
Contextual Info: F U JI [É n U M c ir ^ U K 2SK2523-01 N-channel MOS-FET 450V IQ I 9 A I 6 0 W FAP-II Series > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Avalanche Proof

523A7T5

Contextual Info: FU JI 2SK2764-01R N-channel MOS-FET FAP-IIS Series 800V > Features - High Speed Switching - Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 4 fí 4A 80W > Outline Drawing TO-3PF > Applications

CY74FCT399ATSOC

Abstract: CY74FCT399CT CY74FCT399CTSOC CY74FCT399T CY74FCT399TSOC
Contextual Info: fax id: 7022 —— — Æ jr r ~ 'f V D D CY74FCT399T 17 Q Q I 1 IT COO Quad 2-Input Register Features Functional Description • Function, pinout and drive compatible with FCT and F logic • FCT-C speed at 6.1 ns max. FCT-A speed at 7.0 ns max. • Reduced V qh typically = 3.3V versions of equivalent

mosfet ssd

Abstract: soik
Contextual Info: 2SK2762-01 L,S F U JI N-channel MOS-FET FAP-IIS Series > Features - 800V 4Q 4A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications

Contextual Info: FUJI 2SK2691-01R N-channel MOS-FET IS U J M s u ltìU K FAP-IIIB Series 60V > Features 0,0 I Q 70A 100W Outline Drawing TO-3PF - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated 5.5 .35 > Applications - Motor Control

VIP 100A

Abstract: 2SK2770-01 doom
Contextual Info: P U 2SK2770-01 J 1 E ïïïS D E N-channel MOS-FET 900V 5,5Q 3,5A 100W FAP-IIS Series > Features - Outline Drawing TO-3P High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated

225-J

Abstract: 2MBI100NB-120 M235
Contextual Info: FUJI d 'a s s m 2-Pack IGBT 1200 V 100 A 2MBI100NB-120 a ie IGBT MODULE N series n Outline Drawing n Features • Square RBSOA •L o w Saturation Voltage •Less Total Power Dissipation •Im proved FWD Characteristic •M inim ized Internal Stray inductance