DIODE J3 Search Results
DIODE J3 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE J3 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
6BJ3
Abstract: E1270 6bj3 tube E12-70 I960 general electric
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E12-70, K-5561I-TD 6BJ3 E1270 6bj3 tube E12-70 I960 general electric | |
60 GHz PIN diode
Abstract: SW SPDT SW-0218 SW-1218 DIODE e5 20 GHz PIN diode
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SW-0218 SW-1218 60 GHz PIN diode SW SPDT SW-0218 SW-1218 DIODE e5 20 GHz PIN diode | |
SMC 4 HOLES
Abstract: SW SPDT SW-0218 SW-1218 J1 DIODE 60 GHz PIN diode
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SW-0218 SW-1218 SMC 4 HOLES SW SPDT SW-0218 SW-1218 J1 DIODE 60 GHz PIN diode | |
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Contextual Info: NON-REFLECTIVE, INTERNALLY TERMINATED SPOT DIODE SWITCHES MODEL SW-0218 SW-1218 0.25-18 GHz GENERAL INFORMATION Series SW broadband pin diode switches are medium power devices that operate over wideband frequency ranges. Carefully selected diode placed in either series, series-shunt, or shunt configurations |
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SW-0218 SW-1218 SW-0218 lnput-80 -15VDC | |
bc 7-25 pnp
Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
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1N914 1N4148 1N4150 1N4565 1N4565A 1N4566 1N4566A 1N4570 1N4570A 1N4571 bc 7-25 pnp transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor | |
skiip gb 120Contextual Info: s e M IK R D n SKiiP 402 GB 120 - 201 WT Absolute Maximum Ratings | Conditions IGBT & Inve rse Diode Vces Operating DC link voltage Vcc 11* Theatsink = 25 °C lc Theatsink = 25 °C; tp < 1 ms Icm IGBT & Diode T j3 V is o ,4» AC, 1 min. Theatsink = 25 °C |
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613bb71 QQ05Q01 ai3bb71 0GQ50G3 00G5D04 skiip gb 120 | |
eft303
Abstract: jSw Diode diode b29 T460 ERE74 diode JSW JSW 70 ERE24 P930 T151
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ERE24-ERE74 ERE24 ERE74 50HzIE Mftl80\ Eft30 19S24 I95t/R89) eft303 jSw Diode diode b29 T460 ERE74 diode JSW JSW 70 ERE24 P930 T151 | |
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Contextual Info: SKNa 102 Stud Diode Avalanche Diode SKNa 102 8NO2P:1 ?M2B@ R D77 $ N:&=1:5: %&'5+ J3/ 3(,1(5350 3.+/&,13(P E:&= 2:1( 8 YZ77 ¥777 ¥D77 ¥677 ¥Z77 ¥T77 ?M$8 R CD6 $ N01(S CT7U >) R T7 VEP @GH& C7D[YZ @GH& C7D[¥7 @GH& C7D[¥D @GH& C7D[¥6 @GH& C7D[¥Z |
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NC77P CT777 CD677 | |
DIODE C06
Abstract: OD-8830A 8830A
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0D-8830 OD-8830 DIODE C06 OD-8830A 8830A | |
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Contextual Info: MAX14588 Evaluation Kit General Description The MAX14588 evaluation kit EV kit is a fully assembled and tested circuit board that demonstrates the MAX14588 adjustable overcurrent and overvoltage protector. The EV kit features TVS diode on input and Schottky diode |
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MAX14588 MAX14588 | |
GEX 51 DIODE
Abstract: Gex DIODE Gex 66 diode marking code SM diode 218 Gex marking code KE diode diode GEP 86 A DIODE gde 18 diode gde 78 Diode GEG
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C5DB02 GEX 51 DIODE Gex DIODE Gex 66 diode marking code SM diode 218 Gex marking code KE diode diode GEP 86 A DIODE gde 18 diode gde 78 Diode GEG | |
bc 7-25 pnp
Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
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1N914 1N4148 1N4150 1N5229 1N5230 1N5231 1N5232 1N5233 1N5234 1N5235 bc 7-25 pnp transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA | |
PLD-500
Abstract: PLD-10 M317 pld connector trimpot horizontal PLD-5000
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13-Nov-08 17-Feb-09 29-Jun-09 31-Aug-09 PLD5000-00400-A PLD-200 PLD-500/ PLD-1250 PLD-5000 PLD-10000 PLD-500 PLD-10 M317 pld connector trimpot horizontal | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode MMSZ5221B-MMSZ5259B ZENER DIODE SOD-123 + FEATURES • Planar Die Construction • Ultra-Small Surface Mount Package • General purpose, Medium Current - • Ideally Suited for Automated Assembly Processes |
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OD-123 MMSZ5221B-MMSZ5259B OD-123 areas600 MMSZ5252B MMSZ5253B MMSZ5254B MMSZ5255B MMSZ5256B MMSZ5257B | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode MMSZ5221B-MMSZ5259B ZENER DIODE SOD-123 + FEATURES z z z z Planar Die Construction Ultra-Small Surface Mount Package General purpose, Medium Current Ideally Suited for Automated Assembly Processes |
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OD-123 MMSZ5221B-MMSZ5259B OD-123 MMSZ5250B MMSZ5251B MMSZ5252B MMSZ5254B MMSZ5255B MMSZ5256B MMSZ5257B | |
Zener Diode SOD-323
Abstract: MMSZ5221BS MMSZ5223BS MMSZ5225BS MMSZ5226BS MMSZ5227BS MMSZ5228BS MMSZ5229BS MMSZ5230BS MMSZ5231BS
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OD-323 MMSZ5221BS-MMSZ5259BS OD-323 MMSZ5252BS MMSZ5253BS MMSZ5254BS MMSZ5255BS MMSZ5256BS MMSZ5257BS MMSZ5258BS Zener Diode SOD-323 MMSZ5221BS MMSZ5223BS MMSZ5225BS MMSZ5226BS MMSZ5227BS MMSZ5228BS MMSZ5229BS MMSZ5230BS MMSZ5231BS | |
MARKING CODE f5
Abstract: diode marking code h6 marking code f4 DIODE Zener diode MARKING H5 CMOZ3V0 CMOZ5V1 Zener diode h5 zener diode f7 diode marking 714 CMOZ11V
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CMOZ43V OD-523 CMOZ20V CMOZ22V CMOZ24V CMOZ27V CMOZ30V CMOZ33V CMOZ36V CMOZ39V MARKING CODE f5 diode marking code h6 marking code f4 DIODE Zener diode MARKING H5 CMOZ3V0 CMOZ5V1 Zener diode h5 zener diode f7 diode marking 714 CMOZ11V | |
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Contextual Info: m 1048 GaAs INFRARED EMITTING DIODE GENERAL DESCRIPTION OUTLINE typ. Unit: nini The NJL1104B is a high efficient infrared emitting diode with a glass lens. FEATURES • Narrow beam angle • High density luminous flux • High speed response APPLICATIONS |
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NJL1104B NJL1104B | |
MMSZ5221B
Abstract: MMSZ5223B MMSZ5225B MMSZ5226B MMSZ5227B MMSZ5228B MMSZ5229B MMSZ5230B MMSZ5231B MMSZ5232B
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OD-123 MMSZ5221B-MMSZ5259B OD-123 MMSZ5252B MMSZ5253B MMSZ5254B MMSZ5255B MMSZ5256B MMSZ5257B MMSZ5258B MMSZ5221B MMSZ5223B MMSZ5225B MMSZ5226B MMSZ5227B MMSZ5228B MMSZ5229B MMSZ5230B MMSZ5231B MMSZ5232B | |
SN62 PB36 ag2
Abstract: MA4SW424B-1 PIN diode switch DIODE BY 255 diode AG2
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MA4SW424B-1 MA4SW424B-1 SN62 PB36 ag2 PIN diode switch DIODE BY 255 diode AG2 | |
irkt 132 12Contextual Info: • International SRectffier 4B55452 741 « I N R INTERNATIONAL RECTIFIER bSE D SERIES IRK.F72 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate |
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4B55452 S545E JDDlb74b irkt 132 12 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode MMSZ5221B-MMSZ5272B ZENER DIODE SOD-123 + FEATURES • Planar Die Construction • Ultra-Small Surface Mount Package • General purpose, Medium Current - • Ideally Suited for Automated Assembly Processes |
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OD-123 MMSZ5221B-MMSZ5272B OD-123 areasZ5263B MMSZ5264B MMSZ5265B MMSZ5266B MMSZ5267B MMSZ5268B MMSZ5269B | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode MMSZ5221BS-MMSZ5272BS ZENER DIODE SOD-323 + FEATURES • Planar Die Construction • Ultra-Small Surface Mount Package • General purpose, Medium Current - • Ideally Suited for Automated Assembly Processes |
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OD-323 MMSZ5221BS-MMSZ5272BS OD-323 MMSZ5264BS MMSZ5265BS MMSZ5266BS MMSZ5267BS MMSZ5268BS MMSZ5269BS MMSZ5270BS | |
MICRO-D CONNECTORS
Abstract: GT attenuator voltage controlled KDI attenuator GT attenuator kdi step attenuator
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GT-0206 MICRO-D CONNECTORS GT attenuator voltage controlled KDI attenuator GT attenuator kdi step attenuator | |