DIODE J1 Search Results

SP0504SHTG

Abstract: marking 6c sot23-6
Contextual Info: TVS Diode Arrays SPA Family of Products Low Capacitance ESD Protection - SP0504S Series SP0504S Series 0.85pF Diode Array RoHS Pb GREEN The SP0504S has ultra low capacitance rail-to-rail diodes with an additional zener diode fabricated in a proprietary

Contextual Info: TVS Diode Arrays SPA Diodes Low Capacitance ESD Protection - SP0504S Series SP0504S Series 0.85pF Diode Array RoHS Pb GREEN Description The SP0504S has ultra low capacitance rail-to-rail diodes with an additional zener diode fabricated in a proprietary

tyco mil relay

Contextual Info: 1MS 1MSD 1MSDD 1MST TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ 1MS 1MSD 1MSDD 1MST SENSITIVE TO-5 HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE

60 GHz PIN diode

Abstract: SW SPDT SW-0218 SW-1218 DIODE e5 20 GHz PIN diode
Contextual Info: NON-REFLECTIVE, INTERNALLY TERMINATED SPDT DIODE SWITCHES MODEL SW-0218 SW-1218 0.25–18 GHz GENERAL INFORMATION Series SW broadband pin diode switches are medium power devices that operate over wideband frequency ranges. Carefully selected diode placed in either series, series-shunt, or shunt configurations

SMC 4 HOLES

Abstract: SW SPDT SW-0218 SW-1218 J1 DIODE 60 GHz PIN diode
Contextual Info: NON-REFLECTIVE, INTERNALLY TERMINATED SPDT DIODE SWITCHES MODEL SW-0218 SW-1218 0.25–18 GHz GENERAL INFORMATION Series SW broadband pin diode switches are medium power devices that operate over wideband frequency ranges. Carefully selected diode placed in either series, series-shunt, or shunt configurations

Contextual Info: NON-REFLECTIVE, INTERNALLY TERMINATED SPOT DIODE SWITCHES MODEL SW-0218 SW-1218 0.25-18 GHz GENERAL INFORMATION Series SW broadband pin diode switches are medium power devices that operate over wideband frequency ranges. Carefully selected diode placed in either series, series-shunt, or shunt configurations

Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material

Contextual Info: STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC12H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

L30 dual diode

Contextual Info: STPS20200C Power Schottky diode Datasheet  production data Features Diode 1 • Low forward voltage drop A1  Very small conduction losses K Diode 2  Negligible switching losses A2  Extremely fast switching  Low thermal resistance K  -40°C minimum operating Tj

Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material

Contextual Info: STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC8H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

antenna mtbf

Abstract: J101 kdi 64537 receiver module mtbf mtbf antenna high power pin diode kdi 64537 switch pls 2-40 rf module mtbf AY-J101
Contextual Info: AY-J100 & AY-J101 PIN Diode Switch Assembly Switching speed is 3 S Maximum and the unit operates with +5Vdc at 300mA and -24Vdc@10mA, plus TTL logic. Description: Aeroflex introduces a new series of high power PIN diode switch assemblies for use as antenna horizontal or

Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection - SP3304N Series SP3304N Series 3.3V 20A Diode Array RoHS Pb GREEN Description The SP3304N integrates 4 channels of low capacitance diodes with an additional zener diode to protect sensitive I/O pins against lightning induced surge events and

Diode T148

Abstract: transistor 667 transistor D 667 DTA144EKA T148 marking J1
Contextual Info: FM J 1 A Transistor, digital, PNP, integral diode Features Dimensions U n its: mm • available in an SM T 5 (FMT, SC-74A) package package marking: J1 • package includes a digital PN P transistor (DTA144EKA) and a connected diode • 2.9 ± 0.2 1.9 ± 0.2

Contextual Info: TVS Diode Arrays SPA Diodes Low Capacitance ESD Protection - SP3012 Series SP3012 Series 0.5pF Diode Array RoHS Pb GREEN Description The SP3012 integrates either 4 or 6 channels of ultra low capacitance rail-to-rail diodes and an additional zener diode to provide protection for electronic equipment

eft303

Abstract: jSw Diode diode b29 T460 ERE74 diode JSW JSW 70 ERE24 P930 T151
Contextual Info: E R E 2 4 ' E R E 7 4 2 o a X ± ' < T? - 9 4 * - Y FAST RECOVERY DIODE Features • H7 7 * • a Glass passivated chip Stud mounted *. Applications • Switching power supplies • ft' fJi' Free-wheel diode • ' <7— Snubber diode • Others. Maximum Ratings and Characteristics

Contextual Info: DISCRETE SEMICONDUCTORS BYX120G EHT car ignition diode Preliminary specification File under Discrete Semiconductors, SC01 October 1991 Philips Semiconductors PHILIPS ^ 5 3 ^ 3 1 0035147 Preliminary specification Philips Semiconductors BYX120G EHT car ignition diode

G8060

Abstract: ruru8060 RUR 0820 TB-01
Contextual Info: [ /Title RUR G8060 /Subject (80A, 600V Ultrafa st Diode) /Autho r () /Keywords (80A, 600V Ultrafa st Diode, Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power Switch ing Cir- RURU8060 Data Sheet October 2001 File Number

Contextual Info: SM 5400.SM 5408 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter /5 Surface mount diode Standard silicon rectifier diodes SM 5400.SM 5408 Forward Current: 3 A

Diode 5059

Contextual Info: SM 5059 . SM 5063 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter /5 Surface mount diode Standard silicon rectifier diodes SM 5059.SM 5063 Forward Current: 2 A

Contextual Info: SA 261.265 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter /5 Surface mount diode Fast silicon rectifier diodes SA 261.265 Forward Current: 2 A

Contextual Info: MAX14588 Evaluation Kit General Description The MAX14588 evaluation kit EV kit is a fully assembled and tested circuit board that demonstrates the MAX14588 adjustable overcurrent and overvoltage protector. The EV kit features TVS diode on input and Schottky diode

GEX 51 DIODE

Abstract: Gex DIODE Gex 66 diode marking code SM diode 218 Gex marking code KE diode diode GEP 86 A DIODE gde 18 diode gde 78 Diode GEG
Contextual Info: SURFACE MOUNT TVS DIODE Electrical Characteristics, 5.0 to 30 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30