DIODE J1 Search Results

Contextual Info: SANSHA ELECTRIC J1FG CO 37E J> / 7 ^ 1 2 4 3 OQOOIOD 4 H S E M J m DIODE MODULE SanRex P ow er Diode Module DD110F series are designed for various rectifier circuits. DD 110F has tw o diode chips connected in series in 25 mm 1 inch width package and the

diode G21

Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
Contextual Info: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith

diode Lz 66

Abstract: diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 FMMD914 diode marking x6 BZX84-C15
Contextual Info: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C am bient tem perature Max. Type FM MD914 HD3A BAV70 BAV74 HD 2A BAV99 BAW 56 HD 4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith

SP0504SHTG

Abstract: marking 6c sot23-6
Contextual Info: TVS Diode Arrays SPA Family of Products Low Capacitance ESD Protection - SP0504S Series SP0504S Series 0.85pF Diode Array RoHS Pb GREEN The SP0504S has ultra low capacitance rail-to-rail diodes with an additional zener diode fabricated in a proprietary

MAD130P

Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

Contextual Info: TVS Diode Arrays SPA Diodes Low Capacitance ESD Protection - SP0504S Series SP0504S Series 0.85pF Diode Array RoHS Pb GREEN Description The SP0504S has ultra low capacitance rail-to-rail diodes with an additional zener diode fabricated in a proprietary

tyco mil relay

Contextual Info: 1MS 1MSD 1MSDD 1MST TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ 1MS 1MSD 1MSDD 1MST SENSITIVE TO-5 HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE

60 GHz PIN diode

Abstract: SW SPDT SW-0218 SW-1218 DIODE e5 20 GHz PIN diode
Contextual Info: NON-REFLECTIVE, INTERNALLY TERMINATED SPDT DIODE SWITCHES MODEL SW-0218 SW-1218 0.25–18 GHz GENERAL INFORMATION Series SW broadband pin diode switches are medium power devices that operate over wideband frequency ranges. Carefully selected diode placed in either series, series-shunt, or shunt configurations

SMC 4 HOLES

Abstract: SW SPDT SW-0218 SW-1218 J1 DIODE 60 GHz PIN diode
Contextual Info: NON-REFLECTIVE, INTERNALLY TERMINATED SPDT DIODE SWITCHES MODEL SW-0218 SW-1218 0.25–18 GHz GENERAL INFORMATION Series SW broadband pin diode switches are medium power devices that operate over wideband frequency ranges. Carefully selected diode placed in either series, series-shunt, or shunt configurations

Contextual Info: STPS20200C Power Schottky diode Datasheet − production data Features Diode 1 • Low forward voltage drop A1 • Very small conduction losses K Diode 2 • Negligible switching losses A2 • Extremely fast switching • Low thermal resistance K • -40°C minimum operating Tj

Contextual Info: NON-REFLECTIVE, INTERNALLY TERMINATED SPOT DIODE SWITCHES MODEL SW-0218 SW-1218 0.25-18 GHz GENERAL INFORMATION Series SW broadband pin diode switches are medium power devices that operate over wideband frequency ranges. Carefully selected diode placed in either series, series-shunt, or shunt configurations

Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material

Contextual Info: STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC12H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

SW SPDT

Abstract: J1 DIODE 20 GHz PIN diode RF E4 SMC 4 HOLES SW-0218 SW-1218 60 GHz PIN diode
Contextual Info: NON-REFLECTIVE, INTERNALLY TERMINATED SPDT DIODE SWITCHES MODEL SW-0218 SW-1218 0.25–18 GHz GENERAL INFORMATION Series SW broadband pin diode switches are medium power devices that operate over wideband frequency ranges. Carefully selected diode placed in either series, series-shunt, or shunt configurations

Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material

Contextual Info: STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC8H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

antenna mtbf

Abstract: J101 kdi 64537 receiver module mtbf mtbf antenna high power pin diode kdi 64537 switch pls 2-40 rf module mtbf AY-J101
Contextual Info: AY-J100 & AY-J101 PIN Diode Switch Assembly Switching speed is 3 S Maximum and the unit operates with +5Vdc at 300mA and -24Vdc@10mA, plus TTL logic. Description: Aeroflex introduces a new series of high power PIN diode switch assemblies for use as antenna horizontal or

Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection - SP3304N Series SP3304N Series 3.3V 20A Diode Array RoHS Pb GREEN Description The SP3304N integrates 4 channels of low capacitance diodes with an additional zener diode to protect sensitive I/O pins against lightning induced surge events and

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are

Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection - SP2504N Series SP2504N Series 2.5V 20A Diode Array RoHS Pb GREEN Description The SP2504N integrates 4 channels of low capacitance diodes with an additional zener diode to protect sensitive I/O pins against lightning induced surge events and

Diode T148

Abstract: transistor 667 transistor D 667 DTA144EKA T148 marking J1
Contextual Info: FM J 1 A Transistor, digital, PNP, integral diode Features Dimensions U n its: mm • available in an SM T 5 (FMT, SC-74A) package package marking: J1 • package includes a digital PN P transistor (DTA144EKA) and a connected diode • 2.9 ± 0.2 1.9 ± 0.2

bc 7-25 pnp

Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Contextual Info: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K

Contextual Info: TVS Diode Arrays SPA Diodes Low Capacitance ESD Protection - SP3012 Series SP3012 Series 0.5pF Diode Array RoHS Pb GREEN Description The SP3012 integrates either 4 or 6 channels of ultra low capacitance rail-to-rail diodes and an additional zener diode to provide protection for electronic equipment

Contextual Info: TVS Diode Arrays SPA Diodes Low Capacitance ESD Protection - SP3012 Series SP3012 Series 0.5pF Diode Array RoHS Pb GREEN Description The SP3012 integrates either 4 or 6 channels of ultra low capacitance rail-to-rail diodes and an additional zener diode to provide protection for electronic equipment