DIODE IT4 Search Results

Contextual Info: SONY 1T411 Variable Capacitance Diode Description The IT-411 is a variable capacitance diode designed for analog cellular phone and It has a super miniature package. Features • Super miniature package • Small series resistance 0.40il Max. f=470MHz • Large capacitance ratio

IC-3368

Abstract: smd transistor 9j UPA1600GS iso 1207 PA-1600 20PIN MIL GRADE TRANSISTOR ARRAY PA1600 SMD transistor 6J U
Contextual Info: DATA SHEET NEC FIELD EFFECT POWER TRANSISTOR i COMPOUND — ¿¿PA1600 r MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The juPA1600 is M onolithic N-channel Pow er M O S FET A rray that built CONNECTION DIAGRAM in 8 circuits and Gate Protection Diode designed for LED, Relay,

UTI03

Abstract: 1di480a 3A1T
Contextual Info: 1DI48OA-O55 480a l- ; : Outline Drawings u POWER TRANSISTOR MODULE I F e a tu re s • fiSiWEE High Voltage • 7 U — sfr-f l) >9*?4 it —K A iK • Including Free W heeling Diode ASO A’i7 £ i . '• Excellent Safe.Operating Area ! • JfiStT6 Insulated Type

Contextual Info: G E H PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 1 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS DESCRIPTION The 4N 25 , 4N 26, 4N 27 , and 4 N 2 8 series of optocouplers ' t t H 6.86 MAX B10 w I Πcoupled to a gallium arsenide diode. _ i _ 8.89 8.38 have an NPN silicon planar phototransistor optically

7476 counter

Abstract: 7476 counter down 7476 up down counter ci 7476 74LS CD4029BC CD4029BCN CD4029BCSJ CD4029BCWM M16B
Contextual Info: Revised January 1999 S E M I C O N D U C T O R TM General Description All inputs are protected against static discharge by diode clamps to both V qq and Vgs- Features • Wide supply voltage range: ■ High noise immunity: 3V to 15V 0.45 VDD typ. ■ Low power TTL compatibility:

A6p DIODE

Contextual Info: E R C 8 - 0 4 5 A '> 3 SCHOTTKY BARRIER DIODE ’ Features • I& V f Low VF Super high speed sw itch in g . m m m & m Connection Diagram High reliability by planer design. l^ • E lS s I Applications (D High speed pow er sw itch in g . M a xim u m Ratings and Characteristics

DHM3K20

Abstract: DIODE IT4
Contextual Info: HIGH VOLTAGE-FAST RECOVERY DIODE DHM3K20 Unit in mm inch •ft ft ■ FEATURES • H ig h v o lta g e re c tific a tio n fo r o ffice eq u ip ­ m ent. • D iffused-junction. • E x c e lle n t h ig h te m p e ra tu re o u tp u t c h a r a c ­ te ristic s.

DIODE IT4

Abstract: STTA506D Diode d4 1kva STTA5 STTB506D diode id4 STTA50
Contextual Info:  APPLICATION NOTE TURBOSWITCHΤΜ IN AN ASYNCHRONOUS MOTOR DRIVE B.Rivet The basic schematic of an asynchronous motor drive is shown in fig.1 Fig.1 : Basic schematic of an asynchronous motor drive. Va D1 T1 IT1 T2 D2 D3 T3 ID1 IL T5 T4 IT4 ID4 D4 T6 D6

DIODE IT4

Abstract: STTA506D AN877 STTB506D DIODE T5 Diode d4 switching transistor
Contextual Info: AN877 APPLICATION NOTE TURBOSWITCH IN AN ASYNCHRONOUS MOTOR DRIVE The basic schematic of an asynchronous motor drive is shown in Figure 1 Figure 1. Basic schematic of an asynchronous motor drive. Va D1 T1 IT1 T2 D2 T3 D3 ID1 IL T5 T4 IT4 ID4 D4 T6 D5 D6

DIODE IT4

Abstract: T4 DIODE 24 TRANSISTOR MAKING freewheeling diode 5A STTA506D DIODE T4 DIODE T5 fast recovery diode 600v 5A STTB506D 1kva
Contextual Info:  APPLICATION NOTE TURBOSWITCHΤΜ IN AN ASYNCHRONOUS MOTOR DRIVE B.Rivet The basic schematic of an asynchronous motor drive is shown in fig.1 Fig.1 : Basic schematic of an asynchronous motor drive. Va D1 T1 IT1 T2 D2 D3 T3 ID1 IL T5 T4 IT4 ID4 D4 T6 D6

2Sk176 HITACHI

Abstract: 2SK176 2SK1760 HITACHI 2Sk176 HITACHI 2SK* TO-3
Contextual Info: 2SK1760 4 iH b 2 D 5 DD13014 510 «H IT4 H IT AC HI/ OPTOEL ECT RONICS) blE D SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQ U EN CY POWER AMPLIFIER • FEATURES • High Speed Switching. • High Cutoff Frequency. • Enhancement-Mode.

Contextual Info: PD 9.1663 International IOR Rectifier IR F R /U 9310 PRELIMINARY HEXFET Power MOSFET • • • • • • P-Channel Surface Mount IRFR9310 Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated Voss = -400V R D S (on) = 7 .0 Q

Contextual Info: National Semiconductor" June 1996 NDS8433 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

2SK557

Abstract: 12A 250v 314 hitachi ha-1 IT 314 2SK55 2SK556 A111-1 IT314 Hitachi Scans-001 ISV10
Contextual Info: bl E D 44*^205 0013DS1 Ü74 IHIT4 2SK556,2SK557 H IT A C H I/C O P T O E L E C T R O N IC S » S IL IC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance. • High Speed Switching. • Low Drive Current. • No Secondary Breakdown.

2SK511

Abstract: 296 mos fet ED44
Contextual Info: bl E D 44<ìb2DS DG13073 OST « H I T 4 2SK511 H I T A C H I / OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING HIGH FREQUENCY POWER AMPLIFIER i n • FEATURES • Superior High Frequency Characteristics. • Low Input and Output Capacitance.

CQ 419

Abstract: oms 450 ifr mosfet 2SK2165-01 SC-65 2SK2165
Contextual Info: 2SK2165-01 FUJI PO W ER M O S-F E T N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features Outline Drawings • Hiiih current • Low on-resistance • No secondary breakdown • Low driving power • Hicjh forward Transconductance • Avalanche-proof

transistor c1718

Contextual Info: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS 4N32 4N33 PACKAGE DIMENSIONS DESCRIPTION The 4N32 and 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. FEATURES & APPLICATIONS High isolation resistance— 101,ft

bsr melcher

Abstract: BSR 2024-7
Contextual Info: SR-Fomily D C - D C Converters < 4 0 W Industrial Environment SR-Family 20 W DC-DC Converters Single output of 5 ,1 2 ,1 5 or 24 V DC Input voltage up to 180 V DC • Full input to output isolation 2.5 kVrms i^ixEffici&ntiinp^ • Continuous no-load and short circuit proof

IN5711

Abstract: subtleties settling time TELEDYNE PHILBRICK multiplier 2N4260 Avtech unfaithful AD835 nanosecond pulse generator an128f TELEDYNE PHILBRICK converter
Contextual Info: Application Note 128 June 2010 2 Nanosecond, .1% Resolution Settling Time Measurement for Wideband Amplifiers Quantifying Quick Quiescence Jim Williams INTRODUCTION Instrumentation, waveform synthesis, data acquisition, feedback control systems and other application areas utilize wideband amplifiers. Current generation components

sirfstar IV

Abstract: SiRFstarIV GSD4e GSD4e SiRFStarIV SiRFLive User Manual sirf iv CS129435-MA-1 IT430 SiRFstar V sirfstar 3
Contextual Info: REV 1.6 TECHNICAL DESCRIPTION Fastrax IT430 OEM GPS Receiver This document describes the electrical connectivity and main functionality of the Fastrax IT430 OEM GPS Receiver. September 10, 2010 Fastrax Ltd. 2010-09-10 Page 2 of 43 IT430_Tech_doc.doc TRADEMARKS

2sk725 equivalent

Abstract: 2sk725
Contextual Info: 2SK725 FUJI POWER MOS-FET N CHANNEL SILICON POWER MOS-FET p S E R j I E S •Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■(Applications • Sw itching regulators

etri converter

Abstract: schroff 11009
Contextual Info: K-Family D C -D C Converters > 1 0 0 W Rugged Environment K-Family 150 W DC-DC Converters Input to output isolation Single output: A K .E K 1000 Double output: AK.EK 2000 • Efficient input filter and built-in surge and transient ggsujsisrsssiQWieiteuiti^s

Contextual Info: 2SK1548-01 MR FUJI P Q W E R M O S - F E T N CHANNEL SILICON POWER MOS-FET _ - F-II SERIES • Features „ I Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage

68HC05C4

Abstract: 68hc11a8 DS1305 circuit
Contextual Info: D S1305 DALLAS SEMICONDUCTOR DS1305 Serial Alarm Real Time C lock RTC F EA T U R ES PIN A S S IG N M E N T • Real time clock counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap year com pensation valid up to 2100