S1305 Search Results
S1305 Result Highlights (1)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 98426-S13-05-237LF | Amphenol Communications Solutions | Minitek® 2.00mm, Board to Board, Shrouded Vertical Stacking Header, Through Hole, Double Row, 10 Positions, 2.00mm (0.079in) Pitch. |
S1305 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| S1305-01 | TE Connectivity Raychem Cable Protection | Tapes, Adhesives, Materials - Tape - THERMOFORM ADHESIVES | Original | 71.31KB |
S1305 Price and Stock
Samtec Inc HMTMS-130-55-S-D-230.050 x .100 High-Temp Variable Post Height Micro Terminal Strip |
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HMTMS-130-55-S-D-230 |
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HMTMS-130-55-S-D-230 |
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Samtec Inc HMTMS-130-56-G-D-390.050 x .100 High-Temp Variable Post Height Micro Terminal Strip |
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HMTMS-130-56-G-D-390 |
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HMTMS-130-56-G-D-390 |
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Samtec Inc HMTMS-130-57-G-D-205 |
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Samtec Inc HTMS-130-51-S-S |
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HTMS-130-51-S-S |
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Samtec Inc HTMS-130-58-G-D.050 X .100 High-Temp Through-hole Micro Terminal Strip |
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HTMS-130-58-G-D |
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HTMS-130-58-G-D |
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S1305 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SIEMENS SIPMOS Power Transistor • • • BUZ 40 B N channel Enhancem ent mode Avalanche-rated Type ^DS 1D ^DS on Package 1) O rdering Code BUZ 40 B 500 V 8.5 A 0.8 a TO-220 AB C67078-S1305-A4 Maxim um Ratings Parameter Symbol Continuous drain current, Tc = 35 'C |
OCR Scan |
o-220c67078-s1305-a4 | |
transistor BUZ 40
Abstract: C67078-S1305-A4
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Original |
o-220c67078-s1305-a4transistor buz 40 | |
68HC05C4
Abstract: 68hc11a8 DS1305 circuit
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OCR Scan |
s1305ds1305ds130s68hc05c4+2 | |
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Contextual Info: SIEMENS BUZ 40 B SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vfcs BUZ 40 B 500 V h 8.5 A flbSfon 0.8 a Package Ordering Code TO-220 AB C67078-S1305-A4 Maximum Ratings Parameter Symbol Continuous drain current Values |
OCR Scan |
o-220c67078-s1305-a4 | |
transistor buz 311
Abstract: Buz 304 C67078-S1305-A4 T-150 diode sy 104 SIEMENS mcx
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OCR Scan |
t35i55o-220c67078-s1305-a4fl235b05+6 | |
C67078-S1305-A4
Abstract: BUZ40B
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Original |
o-220c67078-s1305-a4buz40b | |
transistor BUZ 40
Abstract: C67078-S1305-A4
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Original |
o-220c67078-s1305-a4transistor buz 40 | |
ixp435
Abstract: Si3050-FT KENDIN KSZ8995M PNX1702EH/G rt9214 PC28F128J3D PNX1702 TM3260 SI3201-FS IXDP465
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ixp435001us0x500000000x00080000+11 | |
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Contextual Info: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg |
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sihp22n60eo-220ab2002/95/ec2011/65/eu+2 | |
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Contextual Info: SPICE Device Model SUD50P04-08 www.vishay.com Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sud50p04-082002/95/ec2011/65/eujs709a+1 | |
RW-2059
Abstract: RK-6008 convolex tubing Raychem DR-25 Raychem S-1305 RT-1162 RT-1112 RK 6204 S1125 VG 95343 RAYCHEM 6008
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rw-2059rk-6008convolex tubingraychem dr-25+6 | |
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Contextual Info: SQJ940EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFETs FEATURES PRODUCT SUMMARY N-CHANNEL 1 N-CHANNEL 2 VDS (V) 40 40 RDS(on) () at VGS = 10 V 0.0160 0.0064 RDS(on) () at VGS = 4.5 V 0.0188 0.0076 ID (A) 15 Configuration |
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sqj940epaec-q1012002/95/ec2011/65/eu+2 | |
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Contextual Info: SQJ940EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFETs FEATURES PRODUCT SUMMARY N-CHANNEL 1 N-CHANNEL 2 VDS (V) 40 40 RDS(on) () at VGS = 10 V 0.0160 0.0064 RDS(on) () at VGS = 4.5 V 0.0188 0.0076 ID (A) 15 Configuration |
Original |
sqj940epaec-q1012002/95/ec2011/65/eu+2 | |
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Contextual Info: SPICE Device Model SUD45P04-16P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sud45p04-16p2002/95/ec2011/65/eujs709a+1 | |
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HX8369
Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
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hx8369-a00-dshx8369-a00480rgb285october+5 | |
s13050
Abstract: S-1305
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Original |
sihb22n60eo-2632002/95/ec2011/65/eu+4 | |
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Contextual Info: SQJ940EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFETs FEATURES PRODUCT SUMMARY N-CHANNEL 1 N-CHANNEL 2 VDS (V) 40 40 RDS(on) () at VGS = 10 V 0.0160 0.0064 RDS(on) () at VGS = 4.5 V 0.0188 0.0076 ID (A) 15 Configuration |
Original |
sqj940epaec-q1012002/95/ec2011/65/eu+2 | |
THYRISTOR sct 280 04
Abstract: RT-1301 URHT-200-10-0 RW-2054 versafit RW-3009 RAYCHEM 1125 raychem tc 4001 ul e35586 AMS-DTL-23053 12 insulation sleeving raychem
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thyristor sct 280 04rt-1301urht-200-10-0rw-2054+6 | |
S1278
Abstract: S-1305 Raychem tubing BSTS-35 BSTS-07 BSTS-11X4/NM
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Original |
25-footbsts-11x4/nms1278s-1305+3 | |
RK618
Abstract: LOCTITE 3623 S-CH00-0157-002 DBAS 970 25 35 PN 059 ANSI-MC-96 LOCTITE 3542 M27500A22 NES 1004 naval specification SP 107156 souriau 8611
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rk618loctite 3623s-ch00-0157-002dbas 970 25 35 pn 059+6 | |
TCS 1305
Abstract: diod 69a
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OCR Scan |
ds130520-pintcs 1305diod 69a | |
MDM 6600
Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
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9800-oerf-0079800-oerf-005mdm 6600mt 1389 de+8 | |
Ry110
Abstract: diode cross reference RY104 a2305 RY115 MICROWAVE ASSOCIATES IN3716 diode ry24 RY101 1N3717
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OCR Scan |
qd0d013534-61s1a1d207aa1d207e+16 | |
s-1255-04
Abstract: RAYCHEM RNF-100 raychem RW-2019 S1255-04 raychem s1125 raychem s1125 adhesive ADHESIVE s1125 s1124 RK-6017 raychem s1264 adhesive
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s1006s-1255-04raychem rnf-100raychem rw-2019+7 | |