DIODE IN 400 Search Results

Scans-0017327

Abstract: general electric IRCON INFRARED
Contextual Info: -P R O D U C T INFORMATION — Page 1 E L E C T R O N IC Diode INNOVATIONS\ t IN A C T I O N i ~r ß TUBES FOR TV DAMPING DIODE APPLICATIONS COLOR TV TYPE LOW TUBE DROP 6,500 VOLTS DC AND PEAK 400 MILLIAMPERES DC The 19DK3 is a heater—cathode type diode intended for service as the damping diode in the horizontal-deflection

Contextual Info: 1N4448W-V www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the

TSUS4400

Abstract: RthJA
Contextual Info: TSUS4400 Vishay Telefunken GaAs Infrared Emitting Diode in ø 3 mm T–1 Package Description 94 8488 TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors.

SOP-8L

Abstract: hall effect sensor 720 DIODE marking 8L SENSOR NTH 209 zener diode marking 4x AH280 410 hall 8L 05A
Contextual Info: AH280 Hall-Effect Smart Fan Driver „ Features „ General Description - On chip Hall plate - Built-in Zener diode protection for output driver - Built-in protection diode for power reverse connecting - Rotor-lock detection - Automatically restart after release of motor

IMBD4148V-GS08

Contextual Info: IMBD4148-V Vishay Semiconductors Small Signal Switching Diode Features 3 • Silicon Epitaxial Planar Diodes • Fast switching diode in case SOT-23, especially suited for automatic insertion. • This diodes are also available in other case styles including: the DO-35 case

TSC5304EDCP

Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Contextual Info: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

Contextual Info: ISL9R460PF2 4A, 600V Stealth Diode General Description Features The ISL9R460PF2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM and exceptionally soft recovery

D8 marking, SOD123

Contextual Info: AZ23-V-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes, Dual FEATURES • These diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designation DZ23, the single diode SOT-23

Contextual Info: IGBT MODU ODULE MBM200JS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES 4-φ6.5 * High speed and low saturation voltage. 3-M6 108 93 18 20 4-Fast-on Terminal #110 20 C2E1 G2 * low noise due to built-in free-wheeling 15 27 48 62 E2 diode - ultra soft fast recovery diode USFD .

Contextual Info: LD421850 TM POW-R-BLOK Dual SCR/Diode Isolated Module 500 Amperes / 1800 Volts Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING Powerex Dual SCR/Diode Modules are designed for use in applications requiring phase control and isolated

marking code JD BAW56

Abstract: jd sot23 marking CJD BAW56Q-7-F CJD marking diode
Contextual Info: BAW56 DUAL SURFACE MOUNT SWITCHING DIODE Features • • • • • • • Mechanical Data • • Fast Switching Speed Surface Mount Package Ideally Suited for Automated Insertion For General Purpose Switching Applications Two Diode Elements Connected in a Common Anode

Contextual Info: 6511A Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN ceramic DIP package for use as

10-PIN

Abstract: 1N6507 mx marking
Contextual Info: 6506A Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for

Contextual Info: PN41_11 TM POW-R-BLOK Common Anode Dual Diode Module 1100 Amperes / Up to 2600 Volts Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Description: Powerex Dual Diode Modules are designed for use in applications requiring rectification

Contextual Info: BAY80 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • Silicon Epitaxial Planar Diode • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21

Contextual Info: ISL9R30120G2 30 A, 1200 V STEALTH Diode Features Description • Stealth Recovery trr = 269 ns @ IF = 30 A The ISL9R30120G2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse

STTA1212D

Abstract: TRANSISTOR JC 515
Contextual Info: STTA1212D TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 12A VRRM 1200V trr (typ) 50 ns VF (max) 2.0 V K FEATURES AND BENEFITS A K ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION

5U4 rectifier

Abstract: 5U4GB 5u4 tube 5U4GA 5u4gb tube 5u4g 5u4-gb TUBE 5U4G 5u4-g ET-T1255
Contextual Info: 5U4-GB 5U4-GB ET-T1255 Page 1 1-56 TWIN DIODE TUBES FOR FULL-WAVE POWER RECTIFIER APPLICATIONS ~ - DESCRIPTIONAND RATING The 5U4-GB isa filamentary twin diode designed for useas a full-wave rectifier in the power supply of television receivers or other equipment which

Contextual Info: FFA60UA60DN UItrafast ll Dual Diode Features Description • Ultrafast Recovery, Trr = 90ns @ IF = 30 A The FFA60UA60DN is an ultrafast ll dual diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of

MG15D6EM1

Contextual Info: GTR MODULE_ SILICON N CHANNEL MOS TYPE MG15D6EM1 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 6 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode.

e3p1

Abstract: MOSFET 1052 NTMSD3P102R2 NTMSD3P102R2G NTMSD3P102R2SG
Contextual Info: NTMSD3P102R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , Schottky Diode with Low VF • Independent Pin−Outs for MOSFET and Schottky Die

K-556f

Abstract: E12-70 3AT2 tube 3AT2 Rectifier Tubes general electric
Contextual Info: ¡P ElECmOMCS 3AT2 3 AT 2 Page 1 4-63 COMPACTRON DIODE FOR TV HIGH-VOLTAGE RECTIFIER APPLICATIONS - DESCRIPTION AND RATING — = The 3AT2 is a compactron containing a heater-cathode type diode designed for use in television receivers as the high-voltage rectifier to supply power to the anode of

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes.

1n5248

Abstract: 1N5281B
Contextual Info: 1N5221B THRU 1N5281B w w w. c e n t r a l s e m i . c o m SILICON ZENER DIODE 2.4 VOLTS THRU 200 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5221B Series Silicon Zener Diode is a high quality voltage regulator designed for use in industrial, commercial, entertainment