DIODE IN 400 Search Results

1842m

Abstract: DIODE 4d LDD400-1P ldd200 2i125 LDD200-2P
Contextual Info: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser

6098-0126

Abstract: 6098-0 diode c02 D0D82345-32010D D0D82345-20060C MT Series 6098-0061 6098-0022 6098-0017 6098-0129
Contextual Info: MT SERIES 090/WITH BUILT-IN DIODE Small connector incorporating large capacity diode of high reliability and excellent heat radiation for the applications C-10 requiring rectifying function. Structure Diode Connector M Connector F Housing F Connector M with built-in chip diode

Scans-0017402

Abstract: general electric bulb thermometer pf 9sg
Contextual Info: — PRODUCT INFORMATION — Page 1 Diode TUBES FOR TV DAMPING DIODE APPLICATIONS LOW TUBE DROP COLOR TV TYPE 6,500 VOLTS DC AND PEAK 400 MILLIAMPERES DC The 34DK3 is a heater-cathode type diode intended for service as the damping diode in the horizontal—deflection

marking D33

Abstract: BAS70-07S BAS70-08S
Contextual Info: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF

SM2F

Abstract: M2480 BR216
Contextual Info: BR216 _ DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the T0-220AB outline. Each half o f the device conducts normally in one direction, but in the other direction it acts as a breakover diode.

Scans-0017327

Abstract: general electric IRCON INFRARED
Contextual Info: -P R O D U C T INFORMATION — Page 1 E L E C T R O N IC Diode INNOVATIONS\ t IN A C T I O N i ~r ß TUBES FOR TV DAMPING DIODE APPLICATIONS COLOR TV TYPE LOW TUBE DROP 6,500 VOLTS DC AND PEAK 400 MILLIAMPERES DC The 19DK3 is a heater—cathode type diode intended for service as the damping diode in the horizontal-deflection

marking hz SOD-323

Abstract: diode sod 106 BAR63J BAS70-07 SOD Package
Contextual Info: BAR63J PIN DIODE FEATURES AND BENEFITS n n n Pin diode for high speed switching of RF signal Low forward voltage Very low capacitance A 35 K DESCRIPTION Single pin diode in SOD-323 package. This diode is intended to be used in mobile phone to switch the RF signal.

K2404

Contextual Info: H-IIF Series • Heavy metal Platinum: Pt introduced for lifetime control • Higher-speed diode built-in • High breakdown tolerance (high dv/dt) H H: High-Voltage Power MOSFET II: Series (Generation) F: FRD (Fast Recovery Diode) built-in H-IIF Series Built-in Diode trr and Breakdown Tolerance

zener diode rd20e b2

Abstract: diode zener 1N 398 zener diode B3 Zener Diode B1 9 zener diode rd13e zener diode B5 RD6.2E zener diode rd39e b5 RD6.8E NEC Zener diode RD3.0E
Contextual Info: DATA SHEET ZENER DIODES RD2.0E to RD200E 500 mW DHD ZENER DIODE DO-35 NEC Type RD2.0E to RD200E Series are planar type zener diode in the PACKAGE DIMENSIONS (in millimeters) popular DO-35 package with DHD (Double Heatsink Diode) construction φ 0.5 25 MIN.

Contextual Info: 1N4151WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the

Contextual Info: 1N4151WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the

Contextual Info: 1N4151W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the

Contextual Info: 1N4151W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the

diode t 4148

Abstract: diode 4148 SEMTECH ELECTRONICS 1n4148 T 4148 1N4148 Fast Switching Diode 4148 diode LL4148
Contextual Info: 1N4148-K SILICON EPITAXIAL PLANAR DIODE Fast switching diode Max 0.45 This diode is also available in MiniMELF case with the type designation LL4148. Min 28 Cathode Mark Max 1.75 Max 3.4 Min 28 Glass case DO-35 Dimensions in mm Absolute Maximum Ratings Ta = 25oC

DD25F

Abstract: DD25F120 DD25F160 DD25F40 DD25F80
Contextual Info: DIODE MODULE DD25F/KD25F UL;E76102 （M） Power Diode Module DD25F series are designed for various rectifier circuits. DD25F has two diode chips connected in series in 25mm 1inch width package and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage

DD90F160

Abstract: DD90F40 DD90F80 DD90F DD90F120
Contextual Info: DIODE MODULE DD90F/KD90F UL;E76102 （M） Power Diode Module DD90F series are designed for various rectifier circuits. DD90F has two diode chips connected in series in 25mm 1inch width package and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage

diode t 4148

Abstract: t 4148 diode diode 4148 1N4148-K 4148-K T 4148 LL4148 1n 4148 diode diode do35 C 4148 diode f 4148
Contextual Info: 1N4148-K SILICON EPITAXIAL PLANAR DIODE Fast switching diode Max 0.45 This diode is also available in MiniMELF case with the type designation LL4148. Min 28 Cathode Mark Max 1.75 Max 3.4 Min 28 Glass case DO-35 Dimensions in mm Absolute Maximum Ratings Ta = 25oC

diode t 4148

Abstract: diode 4148 k 351 T 4148 LL4148 t 4148 diode 4148
Contextual Info: 1N4148-K SILICON EPITAXIAL PLANAR DIODE Fast switching diode Max 0.45 Cathode Mark This diode is also available in MiniMELF case with the type designation LL4148. Min 28 Max 1.75 Max 3.4 Min 28 Glass case DO-35 Dimensions in mm Absolute Maximum Ratings Ta = 25oC

DD90F80

Abstract: DD90F DD90F120 DD90F160 DD90F40
Contextual Info: DIODE MODULE DD90F/KD90F UL;E76102 （M） Power Diode Module DD90F series are designed for various rectifier circuits. DD90F has two diode chips connected in series in 25mm 1inch width package and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage

BYC20G

Abstract: Rectifier Diode 20A Vrrm 500V MOSFET 40A 600V BYC20-600
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYC20-600 DIODE RECTIFIER DIODE, HYPERFAST „ DESCRIPTION The UTC BYC20-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC20-600 is ideally used in half-bridge lighting

DD110F160

Abstract: DD110F DD110F120 DD110F40 DD110F80
Contextual Info: DIODE MODULE DD110F/KD110F UL;E76102 （M） Power Diode Module DD110F series are designed for various rectifier circuits. DD110F has two diode chips connected in series in 25mm 1inch width package and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage

SOD 23

Abstract: sod-23 TUNER BA178
Contextual Info: BA178 Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Bereichsumschaltung in VHF-Tunern Applications: Band selector in VHF-tuners Abmessungen in mm Dimensions in mm 2 ,4 0 ,2 r T 2 ,5 1,2 0,75 n Kunststoffgehäuse Plastic Case SOD 23

Contextual Info: LTC4358 5A Ideal Diode FEATURES n n n n n n n DESCRIPTION The LTC 4358 is a 5A ideal diode that uses an internal 20mΩ N-channel MOSFET to replace a Schottky diode when used in diode-OR and high current diode applications. The LTC4358 reduces power consumption, heat

33gy7

Abstract: 33gy7a 33GY7-A td324 diode td3 T0324 h 48 diode Scans-0017401 general electric
Contextual Info: PRODUCT INFORMATION — E I J iC T R O S I f: Page 1 IN A C T IO S Compactron Diode-Pentode TUBES The 33GY7-A is a compactron containing a high-perveance diode and a beam-power pentode. The diode is intended for service as the damping diode and the pentode as the horizontaldeflection amplifier in television receivers.