DIODE GR 516 Search Results

v5b1

Abstract: marking v6 22 diode
Contextual Info: ICX432DQ Diagonal 6.67mm Type 1/2.7 Frame Readout CCD Image Sensor with a Square Pixel for Color Cameras Description The ICX432DQ is a diagonal 6.67mm (Type 1/2.7) interline CCD solid-state image sensor with a square pixel array and 3.24M effective pixels. Adoption of a

310T3

Abstract: mur120 AND8057 MMT05B230 MMT05B230T3 MMT05B260T3 MMT05B310T3 MMT10B230 MMT10B230T3 MMT10B260T3
Contextual Info: AND8057 Options for Lowering the Capacitance in TSPD Devices Prepared by: Alfredo Ochoa, Alex Lara, and Gabriel Gonzalez BPD Applications Engineers http://onsemi.com APPLICATION NOTE INTRODUCTION always be present, and it will depend on the structure and die size of each semiconductor device. Therefore, the main

diode 47-6 H1

Abstract: icx432 CM500S CXD3400N ICX432DQF 749H Transistor GR 1815
Contextual Info: ICX432DQF Diagonal 6.67mm Type 1/2.7 Frame Readout CCD Image Sensor with a Square Pixel for Color Cameras Description The ICX432DQF is a diagonal 6.67mm (Type 1/2.7) interline CCD solid-state image sensor with a square pixel array and 3.24M effective pixels. Adoption of a

749H

Abstract: CM500S CXD3400N ICX432DQ 18pin ccd
Contextual Info: ICX432DQ Diagonal 6.67mm Type 1/2.7 Frame Readout CCD Image Sensor with a Square Pixel for Color Cameras Description The ICX432DQ is a diagonal 6.67mm (Type 1/2.7) interline CCD solid-state image sensor with a square pixel array and 3.24M effective pixels. Adoption of a

Diode gr 516

Abstract: 749H 1708f 2760fH
Contextual Info: ICX432DQF Diagonal 6.67mm Type 1/2.7 Frame Readout CCD Image Sensor with a Square Pixel for Color Cameras Description The ICX432DQF is a diagonal 6.67mm (Type 1/2.7) interline CCD solid-state image sensor with a square pixel array and 3.24M effective pixels. Adoption of a

2SA572

Abstract: k-952 TRANSISTOR DATASHEET SA572 Bucket Brigade NE5234 SA572D SA572DR2 diode zener 1 amp bucket brigade devices
Contextual Info: SA572 Product Preview Programmable Analog Compandor The SA572 is a dual-channel, high-performance gain control circuit in which either channel may be used for dynamic range compression or expansion. Each channel has a full-wave rectifier to detect the average value of input signal, a linearized, temperaturecompensated variable gain cell DG and a dynamic time constant

500 DKZ

Abstract: TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren
Contextual Info: TELEPO RT VI ein Sprechfunkgerät für das 80-, 100- und 150/160-MHz-Band Kanalraster 50, 25 und 20 kHz Beschreibung A H /B s -V 300 657/1 Teile 1, 2, 3, 4, 5, 6 Nachdruck, auch auszugsweise, verboten 765 kn Mo Technische W eiterentwicklung Vorbehalten Inhalt

NCP1380

Abstract: marking n52 JESD22 JESD78 R110 part marking leb marking N52 mosfet
Contextual Info: NCP1380 Quasi-Resonant Current-Mode Controller for High-Power Universal Off-Line Supplies The NCP1380 hosts a high−performance circuitry aimed to powering quasi−resonant converters. Capitalizing on a proprietary valley−lockout system, the controller shifts gears and reduces the

Contextual Info: NCP1380 Quasi-Resonant Current-Mode Controller for High-Power Universal Off-Line Supplies The NCP1380 hosts a high−performance circuitry aimed to powering quasi−resonant converters. Capitalizing on a proprietary valley−lockout system, the controller shifts gears and reduces the

NCP1380D

Abstract: NCP1380B
Contextual Info: NCP1380 Quasi-Resonant Current-Mode Controller for High-Power Universal Off-Line Supplies The NCP1380 hosts a high−performance circuitry aimed to powering quasi−resonant converters. Capitalizing on a proprietary valley−lockout system, the controller shifts gears and reduces the

SURGE ARRESTER spark gap

Abstract: 403C MMT05B230 MMT10B230 MOV surge protection circuit diagram industrial tube company GR-974-CORE
Contextual Info: AND8022/D TSPD Thyristor Surge Protective Devices Prepared by: Alfredo Ochoa, Alex Lara, and Gabriel Gonzalez Thyristor Applications Engineers http://onsemi.com APPLICATION NOTE INTRODUCTION AC line fluctuations has the obvious advantage of making them more rugged, thereby lowering your warranty costs.

NCP1380

Abstract: zener diode marking ES code part marking leb NCP1380B
Contextual Info: NCP1380 Quasi-Resonant Current-Mode Controller for High-Power Universal Off-Line Supplies The NCP1380 hosts a high−performance circuitry aimed to powering quasi−resonant converters. Capitalizing on a proprietary valley−lockout system, the controller shifts gears and reduces the

Quasi-resonant flyback transformer

Contextual Info: NCP1380 Quasi-Resonant Current-Mode Controller for High-Power Universal Off-Line Supplies The NCP1380 hosts a high−performance circuitry aimed to powering quasi−resonant converters. Capitalizing on a proprietary valley−lockout system, the controller shifts gears and reduces the

fuse thyristor

Abstract: metal oxide varistor SURGE ARRESTER NP3100SA k45 diode symbol metal oxide varistor SURGE ARRESTER GDT application mdf 24 METAL OXIDE VARISTOR application note on AC ptc overvoltage protections application note gdt testing
Contextual Info: AND8022/D TSPD Thyristor Surge Protection Devices Telecom Circuit Protection Using ON Semiconductor Protection Devices http://onsemi.com APPLICATION NOTE Overview The ON Semiconductor NP series of circuit protectors are used in the secondary overvoltage protection block. Circuits

GR-974-CORE

Abstract: circuit diagram of surge protector for data network
Contextual Info: AND8022/D TSPD Thyristor Surge Protective Devices Prepared by: Alfredo Ochoa, Alex Lara, and Gabriel Gonzalez Thyristor Applications Engineers http://onsemi.com APPLICATION NOTE INTRODUCTION AC line fluctuations has the obvious advantage of making them more rugged, thereby lowering your warranty costs.

transistor H1A

Abstract: h1a transistor transistor H1A H2A sony CCD ICX452AQ ICX452AQ H1A marking TO-78 package
Contextual Info: ICX452AQ Diagonal 9.04mm Type 1/1.8 Frame Readout CCD Image Sensor with a Square Pixel for Color Cameras Description The ICX452AQ is a diagonal 9.04mm (Type 1/1.8) interline CCD solid-state image sensor with a square pixel array and 5.13M effective pixels. Adoption of a

transistor H1A

Abstract: transistor H1A H2A h1a transistor marking v6 78 diode icx452 H1A marking V6 69 diode package marking v5a ICX452AQF
Contextual Info: ICX452AQF Diagonal 9.04mm Type 1/1.8 Frame Readout CCD Image Sensor with a Square Pixel for Color Cameras Description The ICX452AQF is a diagonal 9.04mm (Type 1/1.8) interline CCD solid-state image sensor with a square pixel array and 5.13M effective pixels. Adoption of a

TRANSISTOR D1960

Abstract: Eyal Microwave Industry OZ 9966 OZ 9938 dlva Radar Warning Receiver F9140AH fm MODULATOR 4046 SPA-X1-400 FR-2260-UK
Contextual Info: GENERAL MICROWAVE PRODUCT CATALOG Model Number Index .2 Product Index .5

P31c transistor

Abstract: p31b diode DIODE P31B diode s4 do-214 DIODE P31A MOV surge protection circuit diagram P3100EB P06A diode Triac tip 216 triac zo 109 ma
Contextual Info: Data Book by TECCOR ELECTRONICS 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: 972 580-7777 Fax: (972) 550-1309 Web site: http://www.teccor.com E-mail: sidactor@teccor.com An Invensys company Teccor Electronics is the proprietor of the trademarks SIDACtor , Battrax , and TeleLink™.

T2D 4N DIODE

Abstract: resistor HMR 5W diode code GW 17
Contextual Info: SAK-Series SAK-Series Appendix SAK-Series TS 35 A SAK-Series TS 32 B SAK-Series combination foot TS 35 + TS 32 C SAK-Series for special applications D AKZ-Series TS 15 E Multi-pole terminal strips F KLBÜ shielded connection G Busbars / Terminal rails H Accessories

buz 90 af

Contextual Info: fiflD » • 88D ê23SbQ5 0014604 3 ■ S I E Û _ 14804 D T “ 3 eì-/1 _ BUZ 83 SIEMENS AKTIENGESELLSCHAF Main ratings N-Channel » 800 V Draln-source voltage Its = 2,9 A Continuous drain current Jo Draln-source on-resistance ^DS on = 4,0 n Description

Contextual Info: ALLEGRO MICROSYSTEMS INC 33E D 0S04.33Í- GODSS43 I A L GR 1.25 A QUAD DARLINGTON SWITCHES —MIL-STD-883 COMPLIANT LTLS2064H - ULS2067H Intended for military, aerospace, and related applications, ULS2064H through ULS2077H quad Darlington switches interface

A1012

Abstract: C67078-A1012-A2
Contextual Info: fifi» D • ê 2 3 S b Q5 00 1 4 6 0 4 1 ■ S I E Û 88D 14804 D T - 3*1 -1 [ _ BUZ 83 SIEMENS A K TI EN GE SE LL SCH AF Main ratings N-Channel » 800 V Draln-source voltage Its = 2,9 A Continuous drain current Jo Draln-source on-resistance ^DS on a 4,0 a

Contextual Info: PHILIPS INTERNATIONAL Data sheet status Preliminary specification date of issue March 1991 SbE ]> • 7 1 1 0 fl5 b O O M 4 S 7 T 137 « P H I N BUK471-60A/B PowerMOS transistor Replaces BUK441-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a