DIODE ED 84 Search Results

LG direct drive motor

Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Contextual Info: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W

TXC-21055

Abstract: 1N4148 1N914 IN4148 IN914 TXC-02050 8448-kbit txc 24.5 G753
Contextual Info: MRT Device 6-, 8-, 34-Mbit/s Line Interface TXC-02050 DATA SHEET FEATURES DESCRIPTION • 6312/8448/34368 kbit/s line interface The TranSwitch Multi-rate Receive/Transmit MRT device is a CMOS VLSI device that provides the functions needed for terminating two CCITT line rates, 8448

TXC-21055

Abstract: E2 hdb3 1N4148 1N914 IN4148 IN914 TXC-02050 nom401
Contextual Info: MRT Device 6-, 8-, 34-Mbit/s Line Interface TXC-02050 DATA SHEET FEATURES DESCRIPTION • 6312/8448/34368 kbit/s line interface The TranSwitch Multi-rate Receive/Transmit MRT device is a CMOS VLSI device that provides the functions needed for terminating two CCITT line rates, 8448

Contextual Info: APT80M60J 600V, 84A, 0.055 N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

JT-G703

Contextual Info: MRT Device 6-, 8-, 34- Mbit/s Line Interface TXC-02050C DATA SHEET DESCRIPTION • 6312/8448/34368 kbit/s line interface • AGC and equalizer • Line quality monitor 10-6 error rate threshold • Receive loss of signal and transmit loss of clock alarms

Contextual Info: GP1600FSS12S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4337 - 4.2 DS4337 - 4.3 March 1998 TYPICAL KEY PARAMETERS 1200V CES 2.8V ^CE sat 1600A C(CONT) 3200A C(PK) 190ns 840ns APPLICATIONS •

diode 3a05

Abstract: 3a05 diode IN4142 3A05 Diode diode with PIV 200 1N4145 COLOR MARKING CODE ON DIODE 1N4142 1IN4139-1N4145 IN4142
Contextual Info: DIODES LIMITED 1N4139-1N4145 SERIES FAIRACRES ESTATE. DEDWORTH ROAD. W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS SINGLE JUNCTION THREE AMPERE SILICON RECTIFIERS M E C H A N IC A L < 4 — .310 MAX - i .050

Fairchild 9317

Abstract: 7 segment decoder 9317 9317 decoder 7 segment decoder TTL 9317 9317B ttl 9317 9317C 9317CDM TTL family
Contextual Info: TTL/MSI 9317B • 9317C 7-SEGMENT DECODER/DRIVERS FO R A D D IT IO N A L IN F O R M A T IO N SEE T H E F A IR C H IL D T T L D A T A BOOK. D E S C R IP T IO N — The 9 3 1 7 is a T T L /M S I Seven Segment D ecoder/Driver designed to accept four inputs in 8421 BCD code and provide the appropriate outputs to drive a seven segment numerical

Contextual Info: U S C I 841 Universa! Semiconductor QUAD 8-BIT DAC DESCRIPTION FEATURES The U S C 1841 contains four 8 bit Digital to Analog Converters DA C , w ith output amplifiers and digital interface logic and storage for each D A C . Full speci­ fied performance is achieved w ith o u t trim . The chip

IRFY9120

Abstract: diode ED 84 IRFY120 660B IRFV460 ISFV460D TO-257AB
Contextual Info: Data Sheet No. PD-9.660B I3R INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFV4BO N-CHANNEL 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

GH13D

Contextual Info: Æ lltron PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY • WEST PALM BEACH. FLORIDA 33407 TEL: 407 848-4311 • TLX: 51-3435 • F A X : (407) 863-5946 P-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATING S PARAMETER (Rgs-I.OMo) (1) Gate-Source Voltage Con t inuous

Contextual Info: Æ iitr o n DEVICES.INC. 3301 ELECTRONICS WAY • WEST PALM BEACH, FLORIDA 33407 TEL: 407 848-4311 • TLX: 51-3435 • FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET 1000V, A B S O L U T E MAXIMUM R A T I N G S PARAMETER SYMBOL Dr a i n - s o u r c e V o l t . ( l )

cps-3500

Abstract: 5972 pentode simple vu audio meter I960 Scans-0017353
Contextual Info: TENTATIVE DATA IU5WA TUNG-SOL • DIODE PENTODE M INIATURE T Y P E - 4 MAX li’ MAX. T -5 4 2 i MAX. A N Y MOUNTING POSITION BOTTOM VIEW MINIATURE BUTTON 7 PIN BASE GLASS BULB 6BW T H E 1U5WA IS A F IL A M E N T T Y P E , S H AR P C U T - O F F , DIODE P E N T O D E IN T H E 7 PIN MINIA­

Contextual Info: TO SHIBA 2SK2391 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M OSV 2SK2391 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 4V Gate Drive

IRFS840

Abstract: IRFS841 IRFS842 IRFS843
Contextual Info: SAMSUNG ELECTRONICS INC L.7E » • 7Tb4142 001730^ £k>5 ■ SM6K N-CHANNEL POWER MOSFETS IRFS840/841/842/843 FEATURES • • • • • • • Low er R d s ON Im proved in ductive ru g g ed n es s Fast sw itch in g tim es R ug ged polysilicon g a te cell stru ctu re

Contextual Info: Preliminary Information T his docum ent contains inform ation on a new product. T he param etric in ­ form ation, although not fully characterized, is the result o f testing initial devices. Distinguishing Features • Includes a Pin E lectronics threestatable Driver, D ual C om para­

Contextual Info: VN0300 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON I d (ON) BVdgs (max) (min) TO-39 TO-92 30V 1 .2 0 . 1.0A V N 0 30 0B V N 0 30 0L Advanced DMOS Technology High Reliability Devices See pages 5 -4 and 5-5 fo r M ILIT A R Y S T A N D A R D P rocess Flows

dj22

Contextual Info: USR 1171 thru Microisemi Corp. SANTA ANA. CA USR 1174 SCOTTSDALE. AZ Kor more information call: 602 941-6300 D E S C R IP T IO N T his series of M icrosem i 400m W U ltr a -S ta b le R eferen ce Diodes offers a C E R T I F I E D R E F E R E N C E V O L TA G E S T A B IL I T Y as m easured over

Contextual Info: Data Sheet No. PD-9.889 INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM915Q P-CHANNEL RAD HARD Product Summary -100 Volt, 0.12012, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and

Contextual Info: APT43GA90BD30 APT43GA90SD30 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low

Contextual Info: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

RC snubber for 3 phase rectifier bridge

Abstract: "water Flow Sensor" water flow sensor metal rectifier diode metric bolts torque m 32 HSK-E 6000 skv 1/2b 3000/2700 electrolube chopper transformer FOR UPS heat sensor with fan cooling working
Contextual Info: 8. Rectifier Diodes Features Typical Applications Small plastic packaged diodes • Reverse voltages up to 1700 V • All-purpose rectifier diodes • Axial lead diodes taped for automatic insertion • Snubber diodes Threaded stud diodes • Reverse voltages up to 3000 V

Contextual Info: Æ lltra n PRODUCT DEVICES,INC. 1177 BLUE HERON BLVD. • RIVIERA BEACH, FLORIDA 33404 TEL: 407 848-4311 • TLX: 51-343S • FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 1000V, SYMBOL Dr a i n - S o u r c e Vo 1t . ( 1 )

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid