DIODE DS10 Search Results

Contextual Info: LM84 LM84 Diode Input Digital Temperature Sensor with Two-Wire Interface Literature Number: SNIS108B LM84 Diode Input Digital Temperature Sensor with Two-Wire Interface General Description The LM84 is a remote diode temperature sensor, Delta-Sigma analog-to-digital converter, and digital

Contextual Info: LM83 LM83 Triple-Diode Input and Local Digital Temperature Sensor with Two-Wire Interface Literature Number: SNIS111A LM83 Triple-Diode Input and Local Digital Temperature Sensor with Two-Wire Interface General Description The LM83 is a digital temperature sensor with a 2 wire serial

lm83

Contextual Info: LM83 LM83 Triple-Diode Input and Local Digital Temperature Sensor with Two-Wire Interface Literature Number: SNIS111A LM83 Triple-Diode Input and Local Digital Temperature Sensor with Two-Wire Interface General Description The LM83 is a digital temperature sensor with a 2 wire serial

2N 3904 transistor

Abstract: lm 3904 3904 transistor
Contextual Info: Semiconductor LM84 Diode Input Digital Temperature Sensor with Two-Wire Interface R egister read back capability General Description The LM84 is a rem ote diode tem perature sensor, Deita-Sigm a analog-to-digital converter, and digital over-tem perature detector with an SM Bus interface. The

Contextual Info: LM86 LM86 ±0.75°C Accurate, Remote Diode and Local Digital Temperature Sensor with Two-Wire Interface Literature Number: SNIS114D LM86 ± 0.75˚C Accurate, Remote Diode and Local Digital Temperature Sensor with Two-Wire Interface General Description The LM86 is an 11-bit digital temperature sensor with a

Contextual Info: LM82 Remote Diode and Local Digital Temperature Sensor with Two-Wire Interface General Description The LM82 is a digital temperature sensor with a 2 wire serial interface that senses the voltage and thus the temperature of a remote diode using a Delta-Sigma analog-to-digital converter with a digital over-temperature detector. The LM82 accurately senses its own temperature as well as the temperature of external devices, such as Pentium II Processors or

IXFZ520N075T2

Contextual Info: Advance Technical Information IXFZ520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 465A Ω 1.3mΩ (Electrically Isolated Tab) DE475 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings

Contextual Info: Preliminary Technical Information IXFK520N075T2 IXFX520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFETs VDSS ID25 = = 75V 520A Ω 2.2mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions VDSS

Contextual Info: Advance Technical Information TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 IXTK600N04T2 IXTX600N04T2 = = 40V 600A Ω 1.5mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS

IXTK600N04T2

Abstract: IXTX600N04T2 PLUS247
Contextual Info: Advance Technical Information TrenchT2TM GigaMOSTM Power MOSFET IXTK600N04T2 IXTX600N04T2 VDSS ID25 = = 40V 600A Ω 1.5mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS

IXFK520N075T2

Abstract: 7v150 IXFX520N075T2 PLUS247
Contextual Info: Advance Technical Information IXFK520N075T2 IXFX520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = 75V 520A Ω 2.2mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings

IXTN600N04T2

Contextual Info: Preliminary Technical Information TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 IXTN600N04T2 = = 40V 600A Ω 1.05mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings

140tr

Contextual Info: Preliminary Technical Information MMIX1F520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions

DTM180AA

Abstract: DT-408 STD8018A LP05018 LS1012 DTM180AB
Contextual Info: ZERO-BIAS SCHOTTKY DIODE DETECTORS 100 KHz - 50 GHz FEATURES • No Bias Required • Matched Input for Excellent VSWR* • Extremely Flat Frequency Response* • Very High Sensitivity DZ Series * (DZR & DZM Series) APPLICATIONS ENVIRONMENTAL RATINGS

IXTK550N055T2

Abstract: IXTX550N055T2 PLUS247
Contextual Info: Advance Technical Information IXTK550N055T2 IXTX550N055T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 = = 55V 550A Ω 1.6mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS

IXTN 600N04T2

Abstract: IXTN600N04T2 123B16
Contextual Info: Preliminary Technical Information IXTN600N04T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 = = 40V 600A Ω 1.05mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings

IXTN550N055T2

Abstract: DS100173A IXYS IXTN550N055T2
Contextual Info: Preliminary Technical Information IXTN550N055T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 = = 55V 550A Ω 1.30mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information IXTJ4N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 2.5A 6Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 IXFK220N17T2 IXFX220N17T2 170V 220A Ω 6.3mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions

Contextual Info: Advance Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXR100N60B3H1 (Electrically Isolated Tab) = = ≤ = 600V 68A 1.80V 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings

Contextual Info: Preliminary Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 IXFN520N075T2 = = 75V 480A Ω 1.9mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information GigaMOSTM Power MOSFET VDSS ID25 IXFK180N25T IXFX180N25T = = 250V 180A Ω 12.9mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings

IXFH160N15T2

Abstract: 160N15T2 n-channel, 75v, 80a IXFH160N15T
Contextual Info: Preliminary Technical Information IXFH160N15T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 150V 160A Ω 9.0mΩ 160ns TO-247 Symbol Test Conditions Maximum Ratings VDSS

IXFH12N90P

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFH12N90P IXFV12N90P IXFV12N90PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 900V 12A Ω 900mΩ 300ns PLUS220 (IXFV) G Symbol Test Conditions