DIODE DG3 Search Results

C 33725

Abstract: 7DFL
Contextual Info: b2E D • NEC bM2752S DG37blD 7Dfl H N E C E ELECTRONICS INC LASER DIODE M ODULE NDL5605P 1 310nm OPTICAL CATV/ANALOG APPLICATIONS InGaAsP DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5605P is a 1 310 nm DFB Distributed Feed-Back laser diode B utterfly package module w ith optical isolator. It in­

BB240

Abstract: glass diode green band
Contextual Info: BB240 _ VHF VARIABLE CAPACITANCE DIODE The BB240 is a V H F variable capacitance diode in planar technology with a very high capacitance ratio intended for VHF-band B up to 460 M Hz in all-band tuners. The diode is encapsulated in the hermetically sealed glass envelope SOD- 8O suitable for surface mounting.

precap

Contextual Info: bEE ]> • bM27SSS 0037b53 0T3 «NECE N E C ELECTRONICS INC PHOTO DIODE / _ N D L 5 4 0 5 C 1 OOO to 1 600 nm OPTICAL FIBER COMMUNICATIONS <£80 i i m InGaAs PIN PHOTO DIODE DESCRIPTION NDL5405C is an InGaAs PIN photo diode for a light detector of long wavelength transmission systems. It covers the

F7422D

Contextual Info: PD - 9.1412H International IG R Rectifier IR F7422D 2 PRELIMINARY FETKY MOSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation V Technology • SO-8 Footprint V qss = -20 V

GE monitor

Abstract: NEC PM
Contextual Info: N E C ELECTRONICS INC bEE D • bM2752S 0 0 3 7 ^ 4 bEl M N E C E PRELIMINARY DATA SHEET N EC LASER DIODE MODULE NDL5723P ELECTRON DEVICE 1 550 nm OPTICAL FIBER CO M M UNICATIO NS InGaAsP DC-PBH LASER DIODE MODULE DESCRIPTION NDL5723P is a 1 550 nm laser diode DIP module with singlemode fiber and internal thermo-electric cooler. It is designed fo r a

thermistor 40k

Abstract: NEC LASER DIODE PIN DIP thermo electrical cooler module NDL5762P
Contextual Info: N E C ELECTRONICS INC bEE D • b4B?S25 0037^05 3Sb « N E C E DATA SHEET NEC LASER DIODE MODULE NDL5762P ELECTRON DEVICE 1 310 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DC-PBH PULSED LASER DIODE MODULE DESCRIPTION NDL5762P is a 1310 nm pulsed laser diode DIP module w ith singlemode fiber and internal thermo-electric cooler. It is

DIODE DG3

Abstract: DG3 diode
Contextual Info: CG3 / DG3 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Specially designed for clamping circuits, horizontal deflection systems and damper applications • High temperature metallurgically bonded construction • Cavity-free glass passivated junction

DIODE DG3

Abstract: DG3 diode
Contextual Info: CG3/DG3 VISHAY Vishay Semiconductors Standard Sinterglass Diode \ Features • Specially designed for clamping circuits, horizontal deflection systems and damper applications • High temperature metallurgically bonded construction • Cavity-free glass passivated junction

DIODE DG3

Abstract: DG3 diode
Contextual Info: CG3 / DG3 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Specially designed for clamping circuits, horizontal deflection systems and damper applications • High temperature metallurgically bonded construction • Cavity-free glass passivated junction

DIODE DG3

Abstract: DG3 diode
Contextual Info: CG3 / DG3 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Specially designed for clamping circuits, horizontal deflection systems and damper applications • High temperature metallurgically bonded construction • Cavity-free glass passivated junction

Contextual Info: Not for new designs Low V IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 Combi Packs v CES ^C25 VC E sat 600 V 600 V 40 A 40 A 2.5 V 3.0 V <?C G Short Circuit S O A Capability OE Symbol Test Conditions VCES ^ v CGR Maximum Ratings

Contextual Info: Si GEC PLESSEY S E M I C O N D U C T O R S DS4150-5.5 DSF8045SK FAST RECOVERY DIODE KEY PARAMETERS 4500V ^BRM 430A Jf AV 3500A U m 440|iC Or 3.07|is K APPLICATIONS • Snubber Diode For G TO Applications. FEATURES ■ Double side cooling. ■ High surge capability.

S-40T

Abstract: SGS40TA045 SGS40
Contextual Info: 3DE D • 7^2^537 DG3GbS2 S ■ ' T ‘3>3' 5 fZ 7 SGS-THOMSON ^ 7# s SG S40T A 045D IL I « ! S G S-THQMSON NPN TRANSISTOR POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS) . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE . ADAPTED FOR HIGH POWER SWITCHING

A/smd diode t53

Contextual Info: PD -9.1668A International I R Rectifier IRG4ZC70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFREDa ultrafast,

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

NDL5300

Abstract: NDL5302 NDL5302L1 NDL5310 NDL5312 NDL5314 Double Heterostructure led
Contextual Info: N E C ELECTRONICS INC b5E D • b4S7S2S DOSAIS^ «ÏT4 « N E C E DATA SHEET NEC LIGHT EMITTING DIODE NDL5312 ELECTRON DEVICE 1 30 0 nm O P T IC A L FIBER C O M M U N IC A T IO N S InGaAsP D O U B LE H ETERO STRUCTU RE LED DESCRIPTION N D L 5 3 1 2 is a 1 3 0 0 nm InGaAsP double heterostructure LED. It can achieve high speed response and effective optical

Contextual Info: TONE RINGER WITH BRIDGE DIODE KA2418B/28 INTRODUCTION T h e K A 2 4 1 8 B /2 8 is a m o n o lith ic in te g ra te d c irc u it te le p h o n e to n e rin g e r w ith b rid g e d io d e , w h e n c o u p le d w ith an a p p ro p ria te tra n s d u c e r, it re p la c e s th e e le c tro m e c h a n ic a l bell. T h is d e v ic e is

1N60N

Abstract: 1N6073 1N6074 1N6075 1N6076 1N6077 1N6078 1N6081 50-3-A-12
Contextual Info: MME V SPECS □ QGG1SS DG33131 T • M I L S INCH-POUNDI The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 October 1993_ J HIL-S-19500/503A 12 April 1993 SUPERSEDING MIL-S-19500/503 EL 12 May 1975

STF6045DV

Abstract: BD405 transistor b 1185 BD 149 transistor
Contextual Info: 3QE D £ v • 7^237 SGS-THOMSON iHiOTMKS DG30SDb B T -33^ S STF6045DF STF6045DV S G S-THOMSON NPN DARLINGTON POWER MODULE ■ ■ ■ ■ . . . . EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL

DYNEx

Abstract: DG306AE
Contextual Info: Part and Ordering Number = vDBM/ioo v DR„ v RRM @ T„ ^DRM @ T VJ ^T AV *TCM @ C s @ T V] ^T(RMS) ^TSM @ T yj @ T VJ ^TM (V) (V) (mA) (A) (A) (^F) (A) (kA) DGT304SE* 1300 16 25 250 700 2 390 4 2.2 DG306AE* 2500 16 50 225 600 1 350 3.5 DG406BP* 2500

BUK481-60A

Abstract: F6 sot223
Contextual Info: b^E J> N AUER PHILIPS/DISCRETE • bbS3T31 DG3G71S bl7 BiAPX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.

Contextual Info: SbE D • 7^2^237 DG3'î7fl2 W ■ SGTH SGS-THOMSON ilLIOTMgi M54HC30 M74HC30 S G S-THOMSON T - f 3 ~ 2/ 8-INPUT NAND GATE ■ HIGH SPEED tpo = 13 ns TYP. at Vcc = 5V ■ LOW POWER DISSIPATION lCc = 1 /¿A (MAX.) at Ta = 25°C ■ HIGH NOISE IMMUNITY VNIH = VN|L = 28% VCC (MIN.)

M74HC00

Contextual Info: Sb E G Z T> m 7^2^237 DG3T73D S'ìD • S G T H S C S -T H O M SO N HD»I[L[l RiO gi s G S-THÖHS0N M54HCÖÖ M74HC00 T -*i3 -Z ( QUAD 2-INPUT NAND GATE ■ HIGH SPEED tpD = 8 ns (TYP. at Vcc = 5V ■ LOW POWER DISSIPATION Ice = 1 i*A (MAX.) at Ta = 25°C

DG308

Abstract: DG308ADY DG309CJ DG308A DG308AAK DG308ABK DG308ACJ DG309 DG309DY
Contextual Info: C A L O G I C CÔRP 4flE D • 1844352 0000^44 1 « C G C Quad Monolithic SPST CMOS Analog Switches -T -S t-H DG308A/DG309 Preliminary Product Announcement FEATURES: DESCRIPTION: • • • • • Calogic's DG308A and DG309 are quad single-pole single-throw analog switches designed for high speed