DIODE C2S Search Results

germanium

Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Contextual Info: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014

diode c2s

Abstract: 1T364 sony tuners
Contextual Info: 4 TE D SONY CORP/ COMPONENT PRODS ISONY f l 3 û 2 3 f l 3 OGQEÔÔ7 3 1T364 S O N Y . T - 0 7 - ! 1Ì Silicon Variable Capacitance Diode Description 1T364 Is a variable capacitance diode designed for the tuning of wide band multichannel CATV tuners. Package Outline

sony tuners

Abstract: C25 diode sony tuner radio 1T359 DIODE C2 7
Contextual Info: SONY CORP/COMPONENT PRODS MTE 0 3 f i E 3f l3 D 000200=1 7 ISONY 1T359 S O N Y . Silicon Variable C ap a cita n ce Diode Description The 1 T 3 5 9 is a variable cap a cita n ce diode for electronic tuning, designed for radio or T V tuners. t- o 7 - n Package Outline

1XGH10N100U1

Contextual Info: Low VCE{sat IGBT with Diode High speed IGBT with Diode IXGH10N100U1 IXGH10N100AU1 S ym bol Test Conditions M axim um Ratings V CES Tj = 25°C to 150°C 1000 V V CG» T, = 25°C to 150°C; R ^ = 1 Mi2 1000 V V GES C ontinuous ±20 V v GEM Tra n sie n t ±30

C25P05Q

Abstract: C25P06Q
Contextual Info: SCHO TIKY BARRIER DIODE C2SPOSQ C25P06Q 2 7 .7 A /5 0 -6 0 V FEATURES • Similar to TO-247AC TO-3P Case • Dual Diodes - Cathode Comaon • Low Forward Voltage Drop •Low Power Loss, High Efficiency ° High Surge Capability • 20 Volts thru 100 Volte Types Available

IXSN62

Contextual Info: 4 b û b 2 2 b 0 0 0 1 5 2 b 7êb « I X Y DIXYS IXSN62N60U1 IGBT with Diode IC25 V CES Combi Pack CE sat = 90 A = 600 V = 2.5 V High Short Circuit SOA Capability Preliminary data Symbol Test Conditions v’ ces vtcor Tj v QES v OEM 'c2S = 25'C to Maximum Ratings

b263

Abstract: 19 247 V 4836 v 4836 HJC.1
Contextual Info: aixYs Ultra-Low V IGBT with Diode IXGH 31N60U1 Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V v GES Continuous ±20 V v GEM T ransient ±30 V ^C2S Tc = 25-C 40 A ^C90 Tc = 90°C 31 A ^CM

1XGP12N6

Contextual Info: Low V CE sat IGBT with Diode IXGP12N60U1 V CES CE(sat) Symbol Test Conditions v CES T j = 2 5 °C to 150CC 600 V V COR Tj = 25°C to 150°C; RQE = 1 MQ 600 V v GES Continuous ±20 V v GEM T ransient ±30 V ^C2S Tc = 25”C 24 A Maximum Ratings Tc = 90”C

q5t3

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 ’ CES ^C25 v CE sat tfi Symbol Test Conditions V CES T j = 2 5 ; C to 1 5 0 C 600 V VCGR T,J = 25° C to 150° C; FLC = 1 Mi2 Gt 600 V V GES Continuous ±20 V VGEM Transient +30 V ^C2S 'c90 Maximum Ratings T c = 2 5 °C

Contextual Info: IGBT with Diode IXSH 15N120AU1 ^C25 V CES SCSOA Capability CE sat Symbol Test Conditions V CES T , = 25°C to 150°C 1200 V vCGR T j = 25°C to 150°C; ReE= 1 MQ 1200 V v vGEM C ontinuous T ransient ±20 ±30 V V ^C2S ^C90 ^CM T c = 25°C T c = 90” C T c = 25°C , 1 ms

MC14046B

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14046B Phase Locked Loop L SUFFIX The MC14046B phase locked loop contains two phase comparators, a voltage-controlled oscillator VCO , source follower, and zener diode. The comparators have two common signal inputs, PCAjn and PCBjn. Input PCAjn

Contextual Info: nixY S HiPerFAST IGBT with Diode IXGH39N60BD1 V CES ^C25 V CE sat tn Symbol Test Conditions V CHS T j = 2 5 ° C to 1 5 0 c C 600 V V C GR T , = 25° C to 150° C; RGF = 1 M il 600 V V GES Continuous 120 V Transient +J30 V <c2S T c = 2 5 °C 76 A C90

chip 8-pin TL431

Abstract: TC96C555COA TC96C555CPA TC96C555EOA TC96C555EPA TC96C555MJA power oscillator
Contextual Info: 3A OUTPUT PROGRAMMABLE POWER OSCILLATOR TC96C555 TC96C555 3A OUTPUT PROGRAMMABLE POWER OSCILLATOR FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC96C555 Power Oscillator is an easily programmed IC that can be used in simple switch-mode power supplies, diode doublers and inverters, and similar circuits where

HVC358B

Abstract: HVC367
Contextual Info: DIODE llg^-IS JüS ÎP lÜ E ?^:# “i ^ — K Application Package code MPAK Tuning BS/CS Tuner URP UFP VCO UHF Tuning URP URP UFP URP VHF Tuning TV Tuner UFP AFC MPAK LLD URP UFP URP VCO UFP MPAK SÉRIES Variable capacitance diodes for electronic tuning

0DQ154Q

Contextual Info: MbflbSEb 0DQ154Q 05b B I X Y □IXYS K3BT with Diode IXSN50N120AU1 C25 V CES High Short Circuit SOA Capability CE sat = 75 A = 1200 V = 3.7 V 2 O Preliminary data (09/93) J W ) Symbol Test Conditions v CE8 Tj = 25‘ C to 150'C 1200 V V«* Tj = 25'C to 150'C; R ^ = 1 M il

ixsn35n100au1

Contextual Info: 4feflfc>2Sb OOOITM? D3M • IXY n ix Y S IXSN35N100AU1 PRELIMINARY DATA SHEET IGBT miniBLOC with Diode C 25 VC ES i f V C E sat S ym bol T e s t C o n d itio n s V CES T j =25°C to 150°C 600 V vCGR T , = 25°C to 150°C; R „ = 1 MQ 600 V V GES C ontinuous

1NS14

Abstract: 1N487A G610A 1N473A 1MH12 PEC 736 amk 30-2 HA1I34A
Contextual Info: m s ü H ERMETICALLY S E A L E D elect: ABRUPT - HYPERABRUPT Uf G L A S S P A C K A G ED TUNING D IO D ES ELE C T R IC A L CHARACTERISTICS T a = 25° C unle« otherwise noted Diode Cap (CT)* •M0% M V /1 MH/ G EN ER AL LO W IN D U C T A N C E M IN IA T U R E G L A S S

sensor IN4148

Abstract: 50k trimpot DIODE IN4148 TelCom Semiconductor datasheet AN7 trimpot datasheet sensor IN4148 datasheet TC7106 IN4148 TC04
Contextual Info: SOLVE SENSOR OFFSET PROBLEMS WITH TC7106 APPLICATION NOTE 7 SOLVE SENSOR OFFSET PROBLEMS WITH TC7106 BY WES FREEMAN Design engineers sometimes have to interface the TC7106 and similar ADCs to “non-ideal” sensors. A very common problem is that the sensor often does not give a

hitachi mosfet power amplifier audio application

Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
Contextual Info: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3

D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691

p-channel smd marking code tm

Abstract: smd marking code diode ME SMD mosfet MARKING code TJ
Contextual Info: International Rectifier Iö R P D - 9 .1 2 6 8 E IRF7506 PRELIMINARY HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel M O S FE T Very Small SO IC Package Low Profile <1.1 mm Available in Tape & Reel

K2057

Abstract: 2SK2236 k20s 2SK2146 2sk1855 2SK2057 2SK2150 k205 2SK185 2SK1854
Contextual Info: POWER MOS FET 3.7T-MOSIII*5 V dss= 250~600V type High withstanding series, well suited for applications with Ballast and A C=100V IN switching power supplies. • G uaran teed V gss = ± 30V for all types ■ Im proved high w ithstanding c a rac te ristic s by optimizing the cell configuration

automatic change over switch circuit diagram

Abstract: RELECO c3 a30 fx 24 v dc RELECO C3-A30 FX 24 VDC RELECO C4-A40 C3-A30, RELECO C5-A30, RELECO C2-A20, RELECO C9-A41, RELECO IEC 947 EN60947 RELECO C4-A40 DX
Contextual Info: Benefits of the new Five colours for an easier identification of coil voltage AC red: 230 Vac North America 120 Vac dark red: others Vac system Push-to-Test-Pull-to-Lock button (PTPL) grey: Vac/dc DC C dark blue: others Vdc Coil voltage marked on the top face of the relay

A735

Contextual Info: Semiconductor, Inc. TC125 TC126 PFM STEP-UP DC/DC REGULATORS FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC125/6 step-up Boost switching regulators fur­ nish output currents to a maximum of 80 mA (V in = 2V, V out = 3V) with typical efficiencies above 80%. These devices