DIODE BB3 Search Results

BB329

Abstract: BB*329 A 3V54
Contextual Info: BB329 TUNER DIODE Silicon Epitaxial Planar Capacitance Diode with very high effective capacitance ratio for tuning the whole VHF range in TV receivers, also suited for CTV. These diodes are delivered matched according to the tracking condition described below.

Contextual Info: bbsa'm odsmsti « apx Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode N DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. BAS55

BT 69D

Abstract: FBC 320
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF200R12MT4 EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und Emitter Controlled4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorläufige Daten / preliminary data

DIODE C06-15

Abstract: DIODE C06 15 DIODE C06-13
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS300R17KE3 EconoPACK + Modul mit Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™+ module with trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter

LTC4098-3.6

Abstract: SXA-01GW-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF400R12KE3_B2 62mm C-Serien Modul mit Trench/Feldstopp IGBT3, EmCon High Efficiency Diode und M5 Lastanschluß 62mm C-series module with trench/fieldstop IGBT3 EmCon High Efficiency diode and M5 power terminals

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DDB6U25N16VR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values A325EF36!F"#6$1B%3DE1322E14DDD &' 6 6*+,

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM100GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM150GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

br - b2d

Abstract: br b2d
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM200GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

LTC4098-3.6

Abstract: 6n36
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM300GA120DLCS 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

LTC4098-3.6

Abstract: 36A65 FBC 320
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM200GA120DLCS 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

br b2d

Abstract: br- b2d br - b2d LTC4098-3.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM300GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DZ3600S17K3_B2 Vorläufige Daten / preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values !32C5C361CB3D132214DDD" 2313BCBC36134#6233236B4"3

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD400S33KL2C Vorläufige Daten / preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values #32E5E36$1E3F132214FFF% 2313EE361346233236B4%3

Contextual Info: DISC TYPE DIODE SDF400QAA S D F 4 0 0 0 A A is a Flat Pack Diode designed for high power rectification. • If av = 4000A, Vrrm= 600V • High Reliability by pressure mount construction. (Applications) • High Power Rectifier • Welding Power Supply • Rectifier for metal surface treatment

BB329

Abstract: BB*329 A
Contextual Info: BB329 Tuner Diodes Si Epitaxial Planar Capacitance Diode with very high effective capacitance ratio for tuning the whole VHF range in TV receivers, also suited for CTV. max. 1.90 These diodes are delivered matched according to the tracking condition described below.

24N60D1D

Abstract: 24N60D 24n60d1 620 tg diode
Contextual Info: f f l M A R R f â H G T G 2 N 4 6 D D 1 24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode A p rii 19 9 5 Features Package JEDEC STYLE TO-247 • 24A .600V EMITTER • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode

CV8805

Abstract: BY206 diode CV8308 SOD-18 BYX94 BY227 diode BY207 Diode 1N4007 DO-7 Rectifier Diode BYX10 diode BY227
Contextual Info: Diodes silicon picoampere diode book 1 part 3 and 4 BAV45 Description I frm m A < i Type No. E xtrem ely lo w leakage and lo w capacitance diode. O utline T O —18. Dwg. ref. A T 5 35 I r at V r 5 (pA ) 100 I r at V r 20 (pA ) max. lF (m A) (V ) Vf at I f

Contextual Info: BB369S Tuner Diode Silicon epitaxial planar capacitance diodes with very wide effective capacitance variation for tunig the VHF range and hyperband in television tuners. Cathode Mark Top View These diodes are available as singles or as matched sets of two or more units according to the tracking condition

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

RJJ0319DSP

Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?

Hitachi DSA002759

Contextual Info: BB301C Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-507 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; NF = 1.3 dB typ. at f = 200 MHz • Withstanding to ESD; Build in ESD absorbing diode . Withstand up to 200 V at C = 200 pF,

BB301M

Abstract: Hitachi DSA00388
Contextual Info: BB301M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-506 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; NF = 1.3 dB typ. at f = 200 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,