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    DIODE BAY 55 Search Results

    DIODE BAY 55 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    DIODE BAY 55 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Diode BAY 45

    Abstract: Diode BAY 89 41880
    Contextual Info: BAY 89 Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: Allgemein, für sehr hohe Betriebsspannungen Applications: General purpose, for very high supply voltages Normgehäuse Case 5 1 A 2 DIN 41880 JEDEG DO 7 Gewicht • Weight max. 0,2 g Abmessungen in mm


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    PDF

    Diode BAY 93

    Contextual Info: BAY 93 'W Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Sehr Schnelle Schalter Applications: Very fast switches Abmessungen in mm Dimensions In mm »’»• KATHODE 01,9 CATHODE 0 0 ,5 8 Normgehäuse Case 54 A 2 DIN 41880 JEDEC DO 35


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    Jun7/0474 Diode BAY 93 PDF

    Diode BAY 96

    Abstract: Diode BAY 55 BAY67 RF-45 IR diodes TFK 4 TFK diode TFK diodes DIODE R 67
    Contextual Info: BAY 67 Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: HF-Schaltdicide Applications: Switching RF signals Abmessungen in mm Dimensions in mm g 2 ,6 . II— 11 0 0 ,5 5 — |l- — - H I — •— —-2 6 -► m -7 .2 -— —- 2 6 - -


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    -26-J Diode BAY 96 Diode BAY 55 BAY67 RF-45 IR diodes TFK 4 TFK diode TFK diodes DIODE R 67 PDF

    Diode BAY 55

    Abstract: Bay Linear 4N600 4N600S 4N600T 4N6003600 DSA0083437
    Contextual Info: Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor Description 4N600 3600 Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications


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    4N600 O-220 Diode BAY 55 Bay Linear 4N600S 4N600T 4N6003600 DSA0083437 PDF

    Diode BAY 55

    Abstract: Diode BAY 88 Diode BAY 21 Diode BAY 45 BAY 88 diode BAY 87 diode U264 B u264 74345 BAV86
    Contextual Info: BAY 86 * BAY 87 • BAY 88 Silizium-Diffusions-Dioden Silicon diffusion diodes Anwendungen: Allgemein Applications: General purposes Abmessungen in mm Dimensions in mm g 2,6 Absolute Grenzdaten Absolute maximum ratings Normgehäuse Case 5 1 A 2 DIN 41880 JEDEC DO 7


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    U-26-Â Diode BAY 55 Diode BAY 88 Diode BAY 21 Diode BAY 45 BAY 88 diode BAY 87 diode U264 B u264 74345 BAV86 PDF

    cafs-220

    Abstract: Seasonic ss series Seventeam power supply Thermotron ST-251HR SS-235PS teac fd 235hf testo anemometer teac FD 5.25 seasonic
    Contextual Info: Thermal Considerations for the Pentium III processor at 550MHz Heatsinks & Airflow in ATX chassis May 1999 Order Number: 245184-001 Thermal Considerations for the Pentium® III processor Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any


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    550MHz cafs-220 Seasonic ss series Seventeam power supply Thermotron ST-251HR SS-235PS teac fd 235hf testo anemometer teac FD 5.25 seasonic PDF

    ultra FAST DMOS FET Switches

    Abstract: 60659 B3520 B3520K4 B3540 B3540K4-XX CT-3520
    Contextual Info: Bay Linear Inspire the Linear Power B3520/B3540 N-CHANNEL DMOS FET SWITCH High Gain Level Shifter Series Description Features The B3520 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency wireless


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    B3520/B3540 B3520 CT3520 ultra FAST DMOS FET Switches 60659 B3520K4 B3540 B3540K4-XX CT-3520 PDF

    Contextual Info: Bay Linear Inspire the Linear Power LM4041 Precision Micro power Voltage Reference Description Features The LM4041 is a two-terminal, temperature compensated, band-gap voltage reference, which provides a fixed 1.25V output for input currents between 500 µA to 5mA. The bandgap voltage 1.225V is


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    LM4041 LM4041 OT-23, PDF

    Contextual Info: Bay Linear Inspire the Linear Power B431 2.5V Adjustable Shunt Regulator Description Features The Bay Linear B431 is a three terminal adjustable shunt regulator with thermal stability over Temperature range. Using two external resistors allows the output voltage to be adjusted


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    to100mA 105oC OT-89, PDF

    Voltage Regulator LM78L09 TO-92 package

    Abstract: Diode BAY 46 Data LM78L05 TO92 Diode BAY 46 Diode BAY 96 LM78L15 datasheet lm78l05 Diode BAY 19 LM78L18 15Vto25V
    Contextual Info: Bay Linear Inspire the Linear Power LM78LXX 100mA Positive Voltage Regulator Description Features The Bay Linear LM78LXX is integrated linear positive regulator with three terminals. The LM78LXX offer several fixed output voltages making them useful in wide range of


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    LM78LXX 100mA LM78LXX 100mA Voltage Regulator LM78L09 TO-92 package Diode BAY 46 Data LM78L05 TO92 Diode BAY 46 Diode BAY 96 LM78L15 datasheet lm78l05 Diode BAY 19 LM78L18 15Vto25V PDF

    AC125K

    Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
    Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T


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    76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram PDF

    HC LS IC

    Abstract: HC-5509B3999-003 HC9P5509B3999-003 2wire 4wire
    Contextual Info: HC-5509B3999-003 TM SLIC Subscriber Line Interface Circuit March 1996 tle 9B 9 IC er r- Features Description • DI Monolithic High Voltage Process • Compatible with Worldwide PBX and CO Performance Requirements • Controlled Supply of Battery Feed Current with Programmable Current Limit


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    HC-5509B3999-003 CH-1009 HC LS IC HC-5509B3999-003 HC9P5509B3999-003 2wire 4wire PDF

    DS30-P1241

    Abstract: DS30-P2255 DS30-P1253 sick ds60 SICK distance sensor distance sensor p1241 optical N1241 SICK DS30-P2255 distance sensor SICK distance sensor ds60
    Contextual Info: Distance Sensor DS30 The Distance Sensor DS30 – High performance The Distance Sensor comprises modern technology in a minimum of space – and is unbeatable value for money. The specification for the DS30 lies exactly between the distance sensor DS60/DS40 and the standard sensors for close-range distance measurement. Its capacity as a low-cost high performer sets new standards.


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    DS60/DS40 DS30-P1241 DS30-N1241 DS30-P1253 DS30-P1255 DS30-P2253 DS30-P2255 DS30-P1241 DS30-P2255 DS30-P1253 sick ds60 SICK distance sensor distance sensor p1241 optical N1241 SICK DS30-P2255 distance sensor SICK distance sensor ds60 PDF

    ASCOM 48V 150A

    Abstract: KS-20472-L1S ASCOM rectifier ED83119 ed83119-30 ED83246-30 KS-22089 KS-20472 h569-429 welding rectifier schematic
    Contextual Info: Product Manual H569-429 Select Code 167-792-120 Comcode 107966541 Issue 2 June 1998 Lucent Technologies 600-Ampere, 140-Volt Galaxy Control and Distribution Bay for New and Retrofit 4ESS Applications Notice: Every effort was made to ensure that the information in this


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    H569-429 600-Ampere, 140-Volt H569-429 ASCOM 48V 150A KS-20472-L1S ASCOM rectifier ED83119 ed83119-30 ED83246-30 KS-22089 KS-20472 welding rectifier schematic PDF

    HB Electronic Components

    Abstract: HIP2100 HIP2100IB IRFR120 MS-012-AA TB379
    Contextual Info: HIP2100 TM Data Sheet July 2001 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver • • • • • • • • • • • • • • Ordering Information HIP2100IB TEMP. RANGE oC PACKAGE -40oC to 85oC 8 Ld SOIC (N) Pinout 4022.3 Features The HIP2100 is a high frequency, 100V Half Bridge


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    HIP2100 00V/2A HIP2100IB -40oC HIP2100 CH-1009 HB Electronic Components HIP2100IB IRFR120 MS-012-AA TB379 PDF

    BAV99W A7

    Abstract: BAV99VV BAS16VV BAS16W BAV70W BAV99W BAW56W BAV99W peak temperature
    Contextual Info: BAS16W / BAV70W BA W 56W / BAV99W Surface M o u n t Sw itchin g Diode SW ITCHING DIODE 200-215m AMPF.RRES 70-75 VOLTS Featui-es: T o w Current Leakage *Low Forward Voltage “ Reverse Recover Time T rr*6 n s *Sm all Outline Surface Mount SOT-323 Package •


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    BAS16W BAV70W BAW56W BAV99W 200-215m OT-323 T-323 SC-70) OT-323 BAV99W A7 BAV99VV BAS16VV BAV99W BAV99W peak temperature PDF

    RL0503-5820-97-MS

    Abstract: PCS5035 Thermistor 50K ohm RL0503-55.36K-122-MS RL0503-5820-97-MS 10K thermistor 10k ohm thermistor 5k ohm RL0503-1248-73-MS RL0503-2890-95-MS PCS5035-7
    Contextual Info: Standard Products PCS5035 Quintet Precision Current Sources Built-In Comparators Radiation Tolerant www.aeroflex.com/power November 17, 2009 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Radiation Performance - Total dose > 100 krad Si , Dose rate = 50 - 300 rads(Si)/s


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    PCS5035 SCD5035 RL0503-5820-97-MS Thermistor 50K ohm RL0503-55.36K-122-MS RL0503-5820-97-MS 10K thermistor 10k ohm thermistor 5k ohm RL0503-1248-73-MS RL0503-2890-95-MS PCS5035-7 PDF

    Contextual Info: Preliminary Datasheet RJH6087BDPK Silicon N Channel IGBT High Speed Power Switching R07DS0389EJ0100 Rev.1.00 May 11, 2011 Features • Ultra high speed switching tf = 55 ns typ. at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load • Low on-state voltage


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    RJH6087BDPK R07DS0389EJ0100 PRSS0004ZE-A PDF

    Contextual Info: Standard Products PCS5035 Quintet Precision Current Sources Built-In Comparators Radiation Tolerant www.aeroflex.com/power August 3, 2011 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Radiation Performance - Total dose > 100 krad Si , Dose rate = 50 - 300 rads(Si)/s


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    PCS5035 SCD5035 PDF

    Contextual Info: Preliminary Data Sheet NX5522 Series LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE R08DS0029EJ0100 Rev.1.00 Oct 06, 2010 DESCRIPTION The NX5522 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are


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    NX5522 R08DS0029EJ0100 PDF

    HIP2106

    Abstract: HIP2106IB HIP2106IP IRFR120 MS-001-BA BAY 73 diode
    Contextual Info: HIP2106 TM Data Sheet August 1999 100V/1A Peak, Low Cost, High Frequency Half Bridge Driver Features • Drives N-Channel MOSFET Half Bridge The HIP2106 is a high frequency, 100V Half Bridge N-Channel MOSFET driver IC, available in 8 lead plastic SOIC. The low-side and high-side gate drivers are


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    HIP2106 00V/1A HIP2106 HIP2106IB HIP2106IP IRFR120 MS-001-BA BAY 73 diode PDF

    Diode BAY 46

    Abstract: TMJ9910 tangential TNJ9910 SM3 DIODE
    Contextual Info: ANALOG LEVEL DETECTOR TMJ9910 Available as: TMJ9910, 5 Pin TO-8 T5 TNJ9910, 4 Pin Sq. Surface Mount (SM3) BXJ9910, SMA Connectorized Housing (H6) Features ! ! ! ! -120 mV Output for -10 dBm Input Power ±1.0 dB Flatness Operating Temp. 0 ºC to +50 ºC Environmental Screening Available


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    TMJ9910 TMJ9910, TNJ9910, BXJ9910, Diode BAY 46 TMJ9910 tangential TNJ9910 SM3 DIODE PDF

    TMJ9911

    Abstract: SM3 DIODE 5-PIN
    Contextual Info: ANALOG LEVEL DETECTOR TMJ9911 Available as: TMJ9911, 5 Pin TO-8 T5 TNJ9911, 4 Pin Sq. Surface Mount (SM3) BXJ9911, SMA Connectorized Housing (H6) Features ! ! ! ! -120 mV Output for -10 dBm Input Power ±1.0 dB Flatness Operating Temp. 0 ºC to +50 ºC Environmental Screening Available


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    TMJ9911 TMJ9911, TNJ9911, BXJ9911, 10kOhm TMJ9911 SM3 DIODE 5-PIN PDF

    Contextual Info: Preliminary Data Sheet NX5521 Series LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE R08DS0028EJ0100 Rev.1.00 Oct 06, 2010 DESCRIPTION The NX5521 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are


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    NX5521 R08DS0028EJ0100 PDF