DIODE BAY 21 Search Results

Diode BAY 21

Abstract: Diode BAY 46 ir 0588
Contextual Info: A E G 17 E CORP D aaa'mab 3 q q qt t s s BAY 135 TTIILIIMllfillKiKl electronic Creative Technologies 1 01 0 Silicon Planar Diode " - - ? Applications: Protection circuits, delay circuits Features: • Very low reverse current Dimensions in mm 9i io e Cathode

Diode BAY 46

Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
Contextual Info: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j

60N03

Abstract: 60N035 60N035S Bay Linear 60N035T
Contextual Info: Bay Linear Linear Excellence 60N035 N-Channel Field Effect Transistor Advance Information Description Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications

Diode BAY 19

Abstract: Diode BAY 21 Diode BAY 80 IR 10D DIODE Diode BAY 18 Diode BAY 45 Diode BAY 42 "BAY 21" BAY18 bay 17 diode
Contextual Info: Silicon Diodes Silicon Junction Diodes in DO-7 glass encapsulation fo r general a p p lica tio n s T yp e M a x im u m R a tin g s C h a ra c te ris tic s ia> @ @ @ T = 25 ° C amb = am° T 25 ° C Vp = U = 25 ° C @ 1 V VR = f = 10 V 0,5 M H z Q amb Vr V

Diode BAY 55

Abstract: Diode BAY 88 Diode BAY 21 Diode BAY 45 BAY 88 diode BAY 87 diode U264 B u264 74345 BAV86
Contextual Info: BAY 86 * BAY 87 • BAY 88 Silizium-Diffusions-Dioden Silicon diffusion diodes Anwendungen: Allgemein Applications: General purposes Abmessungen in mm Dimensions in mm g 2,6 Absolute Grenzdaten Absolute maximum ratings Normgehäuse Case 5 1 A 2 DIN 41880 JEDEC DO 7

Diode BAY 21

Abstract: Diode BAY 18 Diode BAY 32 Diode BAY 19 Diode BAY 12 Diode BAY 45 BAY46 BAW32B BAY18 BAW32D
Contextual Info: general purpose and sw itching diode selector guide guide de sélection diodes de commutation et usage général t h o m s o n -c s f Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 €£043 1N456 25 J 1N 456 A W 449)1 1 rtm a a j

Contextual Info: Bay Linear Inspire the Linear Power LM4041 Precision Micro power Voltage Reference Description Features The LM4041 is a two-terminal, temperature compensated, band-gap voltage reference, which provides a fixed 1.25V output for input currents between 500 µA to 5mA. The bandgap voltage 1.225V is

BAY99

Abstract: BAW56 Diode BAV99 SOT23 BAV70 BAY70 3PIR BAS16 BAV99 MJ marking sot23 LFL 2.25
Contextual Info: Surface M o u n t S w itching Diode SW ITCH IN G DIODE 200-215m AM PERRES 70-75 VOLTS F eatu res: *Low C urrent Leakage *Low Forward Voltage "Reverse Recover Tim e T r r* 6 n s *S m all O utline Surface M ount SOT-23 Package SOT-23 O u tlin e Dimensions unit:mm

Voltage Regulator LM78L09 TO-92 package

Abstract: Diode BAY 46 Data LM78L05 TO92 Diode BAY 46 Diode BAY 96 LM78L15 datasheet lm78l05 Diode BAY 19 LM78L18 15Vto25V
Contextual Info: Bay Linear Inspire the Linear Power LM78LXX 100mA Positive Voltage Regulator Description Features The Bay Linear LM78LXX is integrated linear positive regulator with three terminals. The LM78LXX offer several fixed output voltages making them useful in wide range of

H5N2501LD

Abstract: H5N2501LM H5N2501LS H5N2501LSTL-E PRSS0004AE-A PRSS0004AE-C Package Code 22
Contextual Info: H5N2501LD, H5N2501LS, H5N2501LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1250-0200 Rev.2.00 Jul.21,2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

RJL60S5

Contextual Info: Preliminary Datasheet RJL60S5DPK-M0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0818EJ0002 Rev.0.02 Jun 21, 2012 Features • Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)

RJL60S5

Contextual Info: Preliminary Datasheet RJL60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0817EJ0001 Rev.0.01 Jun 21, 2012 Features • Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)

HSM226S

Contextual Info: HSM226S Silicon Schottky Barrier Diode for High speed switching REJ03G0057-0100Z Rev.1.00 Jan.21.2004 Features • Low reverse current, Low capacitance. • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information

HVC133A

Contextual Info: HVC133A Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0170-0100Z Rev.1.00 Jan.21.2004 Features • An optimal solution for antenna switching in mobile phones. • Low capacitance. C1 = 1.0 pF max • Low forward resistance. (rf = 0.7 Ω max)

HVD133A

Contextual Info: HVD133A Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0171-0100Z Rev.1.00 Jan.21.2004 Features • An optimal solution for antenna switching in mobile phones. • Low capacitance. C1 = 1.0 pF max • Low forward resistance. (rf = 0.7 Ω max)

cafs-220

Abstract: Seasonic ss series Seventeam power supply Thermotron ST-251HR SS-235PS teac fd 235hf testo anemometer teac FD 5.25 seasonic
Contextual Info: Thermal Considerations for the Pentium III processor at 550MHz Heatsinks & Airflow in ATX chassis May 1999 Order Number: 245184-001 Thermal Considerations for the Pentium® III processor Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any

ASCOM 48V 150A

Abstract: KS-20472-L1S ASCOM rectifier ED83119 ed83119-30 ED83246-30 KS-22089 KS-20472 h569-429 welding rectifier schematic
Contextual Info: Product Manual H569-429 Select Code 167-792-120 Comcode 107966541 Issue 2 June 1998 Lucent Technologies 600-Ampere, 140-Volt Galaxy Control and Distribution Bay for New and Retrofit 4ESS Applications Notice: Every effort was made to ensure that the information in this

Contextual Info: Preliminary Datasheet RJL5018DPK R07DS0498EJ0200 Previous: REJ03G1817-0100 Rev.2.00 Jun 21, 2012 500V - 35A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.14  typ. (at ID = 17.5 A, VGS = 10 V, Ta = 25C)

Contextual Info: Preliminary Datasheet RJL6015DPK R07DS0815EJ0200 Previous: REJ03G1818-0100 Rev.2.00 Jun 21, 2012 600V - 19A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.34  typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25C)

Contextual Info: Preliminary Datasheet RJL6012DPE R07DS0814EJ0200 Previous: REJ03G1750-0100 Rev.2.00 Jun 21, 2012 600V - 10A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.88  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)

HB Electronic Components

Abstract: HIP2100 HIP2100IB IRFR120 MS-012-AA TB379
Contextual Info: HIP2100 TM Data Sheet July 2001 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver • • • • • • • • • • • • • • Ordering Information HIP2100IB TEMP. RANGE oC PACKAGE -40oC to 85oC 8 Ld SOIC (N) Pinout 4022.3 Features The HIP2100 is a high frequency, 100V Half Bridge

HVD144A

Abstract: PUSF0002ZB-A diode mark T7
Contextual Info: HVD144A Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0429-0200 Rev.2.00 Sep 21, 2005 Features • • • • Adopting the trench structure improves low capacitance. C = 0.43 pF max Low forward resistance. (rf = 1.80 Ω max) Low operation current.

AN9106

Abstract: HS-65647RH BOSSARD
Contextual Info: Special ESD Considerations for the HS-65643RH and HS-65647RH Radiation Hardened SOS SRAMs TM Application Note June 1992 The HS-65643RH and HS-65647RH SRAMs are fabricated on TSOS4, an advanced 1.25mm dual level metal silicon on sapphire process. The sapphire substrate used in this process is an excellent electrical insulator, and allows the