DIODE AX 277 Search Results

5082-2565

Abstract: hp 2817 hp 5082 2207 S3H 02 diode U1Z 07 u1z 99 hp 5082 2817 5082-2500 5082-2711 5082-2766
Contextual Info: COMPONENTS 5082 -2200 / 01/ 0 2 /0 3 5082 - 2207 / 08 / 09/10 5082 2 7 6 5 /6 6 5082 - 2774/75 5082 - 2 7 85/8 6 5082 - 2 7 9 4 /9 5 SCHOTTKY BARRIER DIODES & HIGH CONDUCTANCE DIODES H E W L E T T PACKARD SCHOTTKY BARRIER DIODES FOR STRIPLINE, MICROSTRIP MIXERS

VALVO

Contextual Info: 12 D o u L I e-d io d e v a ria b le-m u p e n to d e This valve combines a pentode w ith tw o diodes, bu ilt round a common cathode. The pentode section has variable characteristics, sliding screen voltage having been adopted w ith a view to th e use of the valve as an I .F amplifier ; th e anode current is accordingly

S3H 02 diode

Abstract: hp 5082 2207 U1Z 09 5082-2202 F 5082 HP 2202 5082-2200 DIODE S3H
Contextual Info: SCHOTTKY BARRIER DIODES FOR STRIPLINE, MICROSTRIP MIXERS AND DETECTORS COMPONENTS SCHOTTKY BARRIER DIODES & HIGH CONDUCTANCE DIODES H E W L E T T PACKARD 5082 - 2200 / 01/ 0 2 /0 3 5082 - 2207 / 08 / 09/10 5082 2 7 6 5 /6 6 5082 - 2774/75 5082 - 2 7 85/8 6

diode ax 277

Contextual Info: S /avM *- KU7 S W - I * Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S40HC1R5 Package I MTO-3P 22± aa%j T y p e No. » 5 . 0 ±0-3 \r D a te code >Tjl25°C US V f = 0.41V r +0.5 lo-o.^ 4>33±0-2 15V 4 0 A Unit • mm -, \ 2 . 0 ±0-3 S # 2 . 4 ±0-3

KSS 240

Contextual Info: SIEMENS BUZ 31 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 31 Vds 200 V to 14.5 A ^DS on 0.2 f l Package Ordering Code TO-220 AB C67078-S.1304-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values

BUK445-100A

Abstract: BUK445-100B BT diode BUK445
Contextual Info: PHILIPS INT ERNATIONAL bSE D WM 7110flSb O O b a W Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched M ode Power Supplies

1N4150

Abstract: 1N4450 1N4606 1N4607 1N460B D035 DT230C DT230H JS-2-65-11
Contextual Info: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES Ir @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.

Contextual Info: # 8-bit R e g is te r/B in a ry Counter w ith 3 -s ta te I/O T h e H D 7 4 H C 5 9 3 c o n sists of a parallel input, 8-bit storage register feeding an 8-bit bin ary counter. and the clocks. co u n te r have in d ivid u al | PIN ARRANGEMENT B o th the register

Contextual Info: SCHOTTKY BARRIER DIODE C20T06Q C20T06Q-11A 22A/60V GCQ20A06 FCQ20A06 FEATURES o 1SQUARE-PA k I TO-263AB SMD Packaged in 24mm Tape and Reel : C20T06Q O Tabless TO-220: C20T06Q-11A o T0-220AB : GCQ20A06 o T0-220AB Fully Molded Isolation : FCQ20A06 o Dual Diodes - Cathode

Contextual Info: r Z Z S G S T H O M S O N ^ 7# s LUOTF^ORODSi T M M B A R 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION MINIMELF (Glass Metal to silicon junction diode primarly intented for UHF mixers and ultrafast switching applications. ABSOLUTE RATINGS (limiting values)

Mullard Mullard quick reference guide

Abstract: CV7476 CV7143 CV8805 BZV46 CV 7476 mullard CV7099 CV7100 diode mullard germanium BYW 64 bridge rectifier
Contextual Info: The Mullard Technical Handbook i t made up of four sets of Books, each comprising several parts:Book 1 light blue Sem iconductor Devices Book 2 (orange) Valves and Tubes Book 3 (green) Com ponents, M aterials and Assem blies Book 4 (purple or dark blue)

Contextual Info: POWEREX INC ßOUUEREX liSE D • 75T4b21 0 0 0 3 S n □ ■ T -¿ 15-J.3 CC42_ 60 CN47_ 60 Powerex, Inc., Hillis Street, Youngwoad, Pennsylvania 15 6 9 7 412 9 2 5 - 7 2 7 2 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 72.75. IS

Contextual Info: LASER COMPONENTS GmbH Address LASERI COMPONENTS Werner-von-Siemens-Str. 15 P.O. Box 1129 D-82140 Olching D-82133 Olching Phone+49-8142-28640 • F ax+49-8142-286411 E-Mail: info@lasercomponents.de • homepage: http://www.lasercomponents.de Datasheet for

IRFP350

Abstract: IRFP 350 irfp 350 n TO218 package
Contextual Info: ZìiSGS-THOMSON EtJOT@res IRFP350 IRFP350FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IR F P 3 5 0 IR F P 3 50 FI V dss RDS on Id 400 V 400 V 0 .3 Q 0.3 a 16 A 10 A . AVALANCHE RUGGEDNESS TECHNOLOGY • 100% AVALANCHE TESTED • REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: SIEMENS BUZ 347 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 347 50 V h 45 A ^bs on Package Ordering Code 0.03 n TO-218AA C67078-S31 15-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: - TC74VHC574F/FW/FS OCTAL D -TYPE FLIP-FLOP WITH 3 -STATE OUTPUT_ The TC74VHC574 is advanced high speed CMOS OCTAL FLIP - FLOP with 3 - STATE OUTPUT fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent

M2279

Abstract: S3G73 25p 1200r BTS59-1200 I 342 GATE TURN-OFF THYRISTORS SOT-93 bts59 BTS59-1200R BTS59-850R IEC134
Contextual Info: PHILIPS INTERNATIONAL MAINTENANCE TYPE 5BE ]> • 711002b 0053071 34E ■ P H I N b It>5y bfcl-Ufcö _ Jv_ FAST GATE TURN-OFF THYRISTORS T h y ris to rs in SOT-93 envelopes capable o f being tu rn e d b o th on and o f f via th e gate. T hey are suitable fo r use in high-frequency inverters, pow er supplies, m o to r c o n tro l etc. The devices have no

TCA160

Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
Contextual Info: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;

C3D0406

Abstract: C3D04065 C3D04 D0406 TO-220 package thermal resistance CSD10060 C3D04065A
Contextual Info: C3D04065A–Silicon Carbide Schottky Diode VRRM = 650 V Z-Rec Rectifier IF AVG = 4 A Qc = 8.5 nC Features • • • • • • • • Package 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage

rca transistor manual

Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
Contextual Info: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi­ conductor devices and circuits. It will be useful to engineers, service technicians, edu­ cators, students, radio amateurs, hobbyists, and others technically interested in transis­

c4d02120

Abstract: C4D02120A
Contextual Info: C4D02120A–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 2 A Qc =15 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching

c4d15120

Abstract: CSD04060 C4D15120A
Contextual Info: C4D15120A–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 15 A Qc = 96 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching

PF8Z 12 DIODE

Abstract: D 6V8 PFZD82 Thomson ZD 6v8 PFZD12 237 6V8 impulsion PF8Z10 PF8Z12 PF8Z18
Contextual Info: S^C D 1 7=1^237 □QG27Q1 S G S-THOMSON - _ 59c O T H O M S O 02701 - N - C S F DIVISION SEMICONDUCTEURS D P F 8 Z 6 V - - - P F Z D 8 — P F 8 Z 1 8 0 6 V 8 - * P F Z D 1 8 0 UNI - AND BIDIRECTIONALTRANSIENT VOLTAGE SUPPRESSORS DIODES D E PROTECTION UNI - E T BIDIRECTIONNELLES

C4D10120A

Abstract: CSD04060 12kv fast switching
Contextual Info: C4D10120A–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 10 A Qc = 66 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching