DIODE 914 Search Results

DIODE 914

Abstract: eeds Low Leakage Diode SMD Diode 631
Contextual Info: DESIGN CHALLENGE # 724 YOUR PORTABLE DEVICES REQUIRE LONGER BATTERY LIFE THINK EFFICIENT THINK CENTRAL TM MAXIMUM LEAKAGE CURRENT Standard Switching Diode 914 series 25nA Reverse Current T A =25˚C IR Low Leakage Diode (3003 series) 1.0nA Ultra Low Leakage Diode

Contextual Info: 1N 914 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode For general purpose and switching Mechanical Data Case: DO-34, DO-35 Glass Case Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics TA=25oC unless otherwise noted.

Contextual Info: US-Lasers: 904nm-5mW - Infrared Laser Diode and Infrared Diode Laser . Page 1 of 1 US-Lasers: 904nm-5mW - Infrared Laser Diode Back to Laser Diodes INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA for LASER DIODE z Index Guided MQW Structure

DBES105A

Abstract: SAS diode
Contextual Info: DBES105a Flip-Chip Dual Diode GaAs Diode Description The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency. This flip-chip dual diode has been designed for

SAS diode

Abstract: high frequency diode BES100 "high frequency Diode"
Contextual Info: BES100 1.0µm Schottky Diode Process Extremely high frequency diode technology for mixer and switch applications Description a - Epitaxial Schottky diode technology - 1.0µm finger width stepper lithography - 3" wafer - Spiral inductors, MIM capacitors, TaN

SAS diode

Abstract: "high frequency Diode" high frequency diode Monolithic System Technology BES100
Contextual Info: BES100 1.0µm Schottky Diode Process Extremely high frequency diode technology for mixer and switch applications a Description - Epitaxial Schottky diode technology - 1.0µm finger width stepper lithography - 3" wafer - Spiral inductors, MIM capacitors, TaN

Contextual Info: 1N 914 Small-Signal Diode Fast Switching Rectifier Features ‹ Silicon Epitaxial Planar Diode ‹ For general purpose and switching Mechanical Data ‹ Case: DO-35 Glass Case ‹ Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics TA=25oC unless otherwise noted.

monolitic R 38

Contextual Info: SIEMENS B B 914 Silicon Variable Capacitance Diode • For FM radio tuner with extended frequency band • High tuning ratio low supply voltage car radio • Monolitic chip (common cathode) for perfect dual diode tracking • Good linearity of C-V curve

IRF7422D2

Contextual Info: PD- 91412J IRF7422D2 PRELIMINARY FETKY TM MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A

BLM21A102S

Abstract: SY88902 SY88903 SY88904 SY88904KC SY88922 SY88993 laser Functional Block Diagram and laserdiode application automatic light control with PIN photo diode CIRCUIT DIAGRAM
Contextual Info: FIBER OPTIC MODULE CONTROLLER WITH APC DESCRIPTION FEATURES • DC bias current adjustable to 25mA ■ Buffered Loss-of-Signal output when used with SY88903 ■ Controlled laser diode turn on ■ Laser diode over-current detect ■ Monitor diode power control circuit

1N4007 diode SOD 80

Abstract: 1N4148 SMA 2n2222a SOT23 smd 2n3055 2N2369 SOT-23 2n3904 smd 2n3055 SOT-23 TIP41 SOT23 2N6520 sot23 SMD DIODE 1N4006
Contextual Info: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 BAS28 CLL914 CMPD 914 CMPD2836 CMPD2838 CMPD7000 SOT-143 SOD-80 SOT-23 SOT-23 SOT-23 SOT-23 Dual, Isolated Leadless Switching Diode Single Switching Diode Dual, Common Anode Dual, Common Cathode

IRF7422D2

Contextual Info: PD- 91412J IRF7422D2 PRELIMINARY FETKY TM MOSFET & Schottky Diode l l l l l l Co-packaged HEXFETÒ Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A D

Contextual Info: DBES105a RoHS COMPLIANT Flip-Chip Dual Diode GaAs Diode Description The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency.

Ethernet to fiber optic converter circuit

Abstract: SY88993 BLM21A102S SY88902 SY88903 SY88904 SY88904KC SY88922 operational amplifier k161 K161
Contextual Info: FIBER OPTIC MODULE CONTROLLER WITH APC DESCRIPTION FEATURES • DC bias current adjustable to 25mA ■ Buffered Loss-of-Signal output when used with SY88903 ■ Controlled laser diode turn on ■ Laser diode over-current detect ■ Monitor diode power control circuit

DBES103

Abstract: DBES110 DIODE 33 25 dual diode anode-cathode SAS diode
Contextual Info: DBES103/110 Flip-Chip Dual Diode GaAs Diode Description The DBES103/110 is a dual Schottky diode family based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency.

1N4937 SMD

Abstract: diode 1n4007 melf smd 2n5401 smd 1n4001 melf diode 1n4007 melf 2n2222a SOT223 1N4148 SOD-80 2n2222a SOT23 1N5819 SOD80 2N2369 SOT-23
Contextual Info: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 CMPD 914 CLL914 CMPD28:i6 CMPD28IÌ8 CMPD7000 BAS28 SOT-23 SOD-80 SOT-23 SOT-23 SOT-23 SOT-143 Single Switching Diode Leadless Switching Diode Dual, Common Anode Dual, Common Cathode Dual, In Series

DIODE 914

Abstract: 914 DIODE
Contextual Info: SMBD 914 Silicon Switching Diode 3 • For high-speed switching applications 2 1 VPS05161 1 3 EHA07002 Type Marking SMBD 914 s5D Pin Configuration 1=A 2 n.c. Package 3=C SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage

1N4149

Abstract: 1N4150 1N4151 1N4152 1N4153 1N4447 1N4449 1N914 1N44491
Contextual Info: 1N 914 .1N 4454 SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxial Planar Diode for general purpose and switching. The types 1N4149, 1N4447 and 1N4449 are also availble in glass case DO-34. Glass case JEDEC DO-35 Glass case JEDEC DO-34 Dimensions in mm Dimensions in mm

semiconductor

Abstract: hirect H507CH Hirect diode H400TB
Contextual Info: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5

VPS05161

Abstract: a1 sot-23
Contextual Info: BB 914 Silicon Variable Capacitance Diode 3 • For FM radio tuner with extended frequency band • High tuning ratio low supply voltage car radio • Monolitic chip (common cathode) for perfect dual diode tracking 2 • Good linearity of C - V curve • High figure of merit

VPS05161

Contextual Info: BB 914 Silicon Variable Capacitance Diode 3
For FM radio tuner with extended frequency band
High tuning ratio low supply voltage car radio
Monolitic chip (common cathode) for perfect dual diode tracking 2
Good linearity of C - V curve
High figure of merit

IRF7422D2

Abstract: MS-012AA IRF74
Contextual Info: PD- 91412L IRF7422D2 FETKY TM MOSFET & Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A D 1 8 A 2 7 D S 3 6 D 4

Contextual Info: DBES105a RoHS COMPLIANT Flip-Chip Dual Diode GaAs Diode Description 30 30 100 diameter 20 26 The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating

DBES105A

Abstract: DIODE BP dual diode mixer DBES105a99F
Contextual Info: DBES105a RoHS COMPLIANT Flip-Chip Dual Diode GaAs Diode Description 30 30 100 diameter 20 26 The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating