DIODE 914 Search Results

DIODE 914

Abstract: eeds Low Leakage Diode SMD Diode 631
Contextual Info: DESIGN CHALLENGE # 724 YOUR PORTABLE DEVICES REQUIRE LONGER BATTERY LIFE THINK EFFICIENT THINK CENTRAL TM MAXIMUM LEAKAGE CURRENT Standard Switching Diode 914 series 25nA Reverse Current T A =25˚C IR Low Leakage Diode (3003 series) 1.0nA Ultra Low Leakage Diode

Contextual Info: US-Lasers: 904nm-5mW - Infrared Laser Diode and Infrared Diode Laser . Page 1 of 1 US-Lasers: 904nm-5mW - Infrared Laser Diode Back to Laser Diodes INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA for LASER DIODE z Index Guided MQW Structure

DBES105A

Abstract: SAS diode
Contextual Info: DBES105a Flip-Chip Dual Diode GaAs Diode Description The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency. This flip-chip dual diode has been designed for

SAS diode

Abstract: high frequency diode BES100 "high frequency Diode"
Contextual Info: BES100 1.0µm Schottky Diode Process Extremely high frequency diode technology for mixer and switch applications Description a - Epitaxial Schottky diode technology - 1.0µm finger width stepper lithography - 3" wafer - Spiral inductors, MIM capacitors, TaN

Contextual Info: 1N 914 Small-Signal Diode Fast Switching Rectifier Features ‹ Silicon Epitaxial Planar Diode ‹ For general purpose and switching Mechanical Data ‹ Case: DO-35 Glass Case ‹ Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics TA=25oC unless otherwise noted.

BLM21A102S

Abstract: SY88902 SY88903 SY88904 SY88904KC SY88922 SY88993 laser Functional Block Diagram and laserdiode application automatic light control with PIN photo diode CIRCUIT DIAGRAM
Contextual Info: FIBER OPTIC MODULE CONTROLLER WITH APC DESCRIPTION FEATURES • DC bias current adjustable to 25mA ■ Buffered Loss-of-Signal output when used with SY88903 ■ Controlled laser diode turn on ■ Laser diode over-current detect ■ Monitor diode power control circuit

Contextual Info: DBES105a RoHS COMPLIANT Flip-Chip Dual Diode GaAs Diode Description The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency.

Ethernet to fiber optic converter circuit

Abstract: SY88993 BLM21A102S SY88902 SY88903 SY88904 SY88904KC SY88922 operational amplifier k161 K161
Contextual Info: FIBER OPTIC MODULE CONTROLLER WITH APC DESCRIPTION FEATURES • DC bias current adjustable to 25mA ■ Buffered Loss-of-Signal output when used with SY88903 ■ Controlled laser diode turn on ■ Laser diode over-current detect ■ Monitor diode power control circuit

b673 transistor

Abstract: transistor B673 914 DIODE b673 DIODE 914 Q62702-B673
Contextual Info: BB 914 Silicon Variable Capacitance Diode • For FM radio tuner with extended frequency band • High tuning ratio low supply voltage car radio • Monolitic chip (common cathode) for perfect dual diode tracking • Good linearity of C-V curve • High figure of merit

DIODE 914

Abstract: 914 DIODE
Contextual Info: SMBD 914 Silicon Switching Diode 3 • For high-speed switching applications 2 1 VPS05161 1 3 EHA07002 Type Marking SMBD 914 s5D Pin Configuration 1=A 2 n.c. Package 3=C SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage

1N4149

Abstract: 1N4150 1N4151 1N4152 1N4153 1N4447 1N4449 1N914 1N44491
Contextual Info: 1N 914 .1N 4454 SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxial Planar Diode for general purpose and switching. The types 1N4149, 1N4447 and 1N4449 are also availble in glass case DO-34. Glass case JEDEC DO-35 Glass case JEDEC DO-34 Dimensions in mm Dimensions in mm

semiconductor

Abstract: hirect H507CH Hirect diode H400TB
Contextual Info: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5

VPS05161

Abstract: a1 sot-23
Contextual Info: BB 914 Silicon Variable Capacitance Diode 3 • For FM radio tuner with extended frequency band • High tuning ratio low supply voltage car radio • Monolitic chip (common cathode) for perfect dual diode tracking 2 • Good linearity of C - V curve • High figure of merit

DBES105A

Abstract: DIODE BP dual diode mixer DBES105a99F
Contextual Info: DBES105a RoHS COMPLIANT Flip-Chip Dual Diode GaAs Diode Description 30 30 100 diameter 20 26 The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating

Contextual Info: PD- 91411D IRF7421D1 FETKYä MOSFET / Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint A A D 1 8 S 2 7 D S 3 6 D G 4 5 D A VDSS = 30V RDS on = 0.035Ω

1N4148WT

Abstract: 1N4148WT RoHS 1N914BWT 1N4448WT 914W
Contextual Info: 1N4148WT / 1N4448WT / 1N914BWT High Conductance Fast Switching Diode • • • • • • • Fast Switching Diode Trr <4.0nsec Flat Lead, Surface Mount Device under 0.70mm Height Extremely Small Outline Plastic Package SOD523F Moisture Level Sensitivity 1

27K resistor datasheet

Abstract: CHE1270a98F
Contextual Info: CHE1270a RoHS COMPLIANT 10-44GHz Wide Band Detector GaAs Monolithic Microwave IC Description RF IN Matching The CHE1270a is a detector that integrates a matched detection diode Vdet . A reference diode is also available to be used in differential mode (Vref).

CHE1270a98F

Contextual Info: CHE1270a RoHS COMPLIANT 12-40GHz Wide Band Detector GaAs Monolithic Microwave IC Description The CHE1270a is a detector that integrates a matched detection diode Vdet . A reference diode is also available to be used in differential mode (Vref). RF IN Matching

TVR30

Abstract: TVR 30 TV flyback TVR diode Flyback Xfmr 30KV 30KV rectifier
Contextual Info: TVR30 HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE - TVR30 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits

SP720

Abstract: 150pf 6kv AN9304 AN9612 SP720MD SP720MD-8 SP720MM SP720MM-8 CLCC automotive SCR PIN CONFIGURATION DRAWING
Contextual Info: Data Sheet July 1999 High Reliability Electronic Protection Array for ESD and Overvoltage Protection The SP720 is a High Reliability Array of SCR/Diode bipolar structures for ESD and over-voltage protection to sensitive input circuits. The SP720 has 2 protection SCR/Diode

Contextual Info: HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE—TVR 20 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits for

laser diode driver circuit automatic power control

Abstract: V 350 k10 single power diode package SY88902 SY88903 SY88905 7e04 2E-04
Contextual Info: LASER DIODE CONTROLLER WITH APC FEATURES SY88905 DESCRIPTION • DC bias current adjustable to 25mA ■ Buffered Loss-of-Signal output when used with SY88903 ■ Monitor Diode power control circuit ■ Designed for use with SY88902 and SY88903 ■ Single power supply

Contextual Info: HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE— TVR30 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits for

Contextual Info: HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE—TVR 20 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits for