DIODE 8A 400 V Search Results

st 393

Abstract: STTH8R04 STTH8R04D STTH8R04DI STTH8R04FP STTH8R04G STTH8R04G-TR
Contextual Info: STTH8R04 Ultrafast recovery diode Main product characteristics IF AV 8A VRRM 400 V Tj (max) 175° C VF (typ) 0.9 V trr (typ) 25 ns A K K • Very low switching losses ■ High frequency and high pulsed current operation ■ High junction temperature TO-220FPAC

n539

Abstract: 6A10 DIODE diode 2a05 FRI57 diode 6A10 Diode IN5398 N4003 diode k5 10-16 diode 1n5392 N5398
Contextual Info: DIODE RECTIFIERS GENERAL PURPOSE /1A • 1.SA • 2A • 3A • 8A MAXIMUN Peak Reverse Voltage PRV Max Avg Rect Current @ Half-Wave Res Load 60Hz L @Ta 1N4001 1N4002 ÌN4003 1N4004 1N4005 1N400Ó 1N4007 50 100 200 400 600 800 1000 10 1.0 1.0 Ì0 1.0 1.0

IRGB4060D

Abstract: IRF1010 CT4-15
Contextual Info: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

IRF1010

Abstract: 8A2021
Contextual Info: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

Contextual Info: PD - 97073 IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

STTA806DI

Abstract: STTA806D
Contextual Info: STTA806D I  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 8A VRRM 600V trr (typ) 25ns VF (max) 1.5V K A IF(AV) FEATURES AND BENEFITS A A SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode. ULTRA-FAST RECOVERY.

BB2L

Abstract: STTA812D STTA812DI STTA812G
Contextual Info: STTA812D/DI/G  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 8A VRRM 1200V trr typ 50ns VF (max) 2.0V K A IF(AV) A A FEATURES AND BENEFITS K ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN

IRF840

Abstract: ISL9R860S3S TB334
Contextual Info: ISL9R860S3S May 2001 Data Sheet itle UF7 3P F76 D3 bA, V, 22 m, an- 8A, 600V Stealth Diode Features The ISL9R860S3S is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse

Contextual Info: APT11GF120BRDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT11GF120BRDQ1 APT11GF120BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED TO -2 47 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.

STTA806D

Abstract: STTA806DI STTA806G STTA806G-TR
Contextual Info: STTA806D/DI/G  TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 8A VRRM 600V trr (typ) 25ns VF (max) 1.5V K A A K K Insulated TO-220AC STTA806DI TO-220AC STTA806D FEATURES AND BENEFITS SPECIFICTO”FREEWHEEL MODE” OPERATIONS:

STTA806DI

Abstract: STTA806D STTA806G STTA806G-TR
Contextual Info: STTA806D/DI/G TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 8A VRRM 600V trr (typ) 25ns VF (max) 1.5V K • ■ ■ ■ K Insulated TO-220AC STTA806DI TO-220AC STTA806D FEATURES AND BENEFITS ■ A A K SPECIFIC TO “FREEWHEEL MODE” OPERATIONS:

STTA806DI

Abstract: 4a 400V ultra fast diode d2pak STTA806D STTA806G STTA806G-TR
Contextual Info: STTA806D/DI/G  TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 8A VRRM 600V trr (typ) 25ns VF (max) 1.5V K • ■ ■ ■ K Insulated TO-220AC STTA806DI TO-220AC STTA806D FEATURES AND BENEFITS ■ A A K SPECIFIC TO “FREEWHEELMODE”OPERATIONS:

STTB806M

Abstract: Diode SMD ED 8A
Contextual Info: r z 7 m S C S - T H O M S O N 7# « ^ m [ i O T 2* S T T B 806M S ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f (av 8A V rrm 600V trr (typ) 50ns V f (max) 1.3V FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­ TIONS: Snubbing or clamping, demagnetization

F60SA60DS

Abstract: working of ups mosfet 200A FFPF60SA60DS
Contextual Info: FFPF60SA60DS Features • • • • • Soft Recovery tb / ta > 1.2 Fast Recovery (trr < 25ns) Reverse Voltage, 600V Forward Voltage (@ TC = 125°C), < 2.0 V Enhanced Avalanche Energy TO-220F-3L Applications • • • • • • 1 2 3 1 2 3 Switch Mode Power Supplies

APT8GT60KR

Contextual Info: APT8GT60KR 600V Thunderbolt IGBT TO-220 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop

8N40

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N40 Preliminary Power MOSFET 8 A, 400 V N-CHANNEL POWER MOSFET 1 „ The UTC 8N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

Contextual Info: m NEREX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 KS621K40 Single Darlington Transistor Module 400 Amperes/1000 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature

Contextual Info: APT1001R6BFLL_SFLL APT1001R6BFLL APT1001R6SFLL Typical Performance Curves 8A 1.60Ω 1000V POWER MOS 7 R FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ®

APT1001R6BFLL

Abstract: APT1001R6SFLL
Contextual Info: APT1001R6BFLL_SFLL APT1001R6BFLL APT1001R6SFLL Typical Performance Curves 1000V POWER MOS 7 R FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

STTA812D

Abstract: STTA812DI STTA812G STTA812G-TR DI 380 Transistor
Contextual Info: STTA812D/DI/G TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 8A VRRM 1200V trr (typ) 50ns VF (max) 2.0V K A A K K TO-220AC Ins. STTA812DI TO-220AC STTA812D FEATURES AND BENEFITS • ■ ■ ■ ■ ULTRA-FAST, SOFT RECOVERY.

transistor s72

Abstract: S72 Transistor KS621K40A41 transistor b 1417 transistor s70 powerex ks62
Contextual Info: PUMEVZGf KS621K40A41 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 400 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power

transistor s68

Abstract: s66 transistor transistor S67 KS621K40 transistor b 103 1f s65 powerex ks62 KS621K4
Contextual Info: m ßfBIEK KS621K40 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S ií lQ lG D d r H n g t O n Transistor Module 400 Amperes/1000 Volts O U T L I N E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power

Contextual Info: OM5201ST/RT/DT OM5203ST/RT/DT OM5217ST/RT/DT OM5234ST/RT/DT OM5202ST/RT/DT OM5216ST/RT/DT OM5233ST/RT/DT HERMETIC JEDEC TO-257AA HIGH EFFICIENCY, CENTER-TAP RECTIFIER 16 Amp, 50 To 600 Volts, 35 To 50 ns trr FEATURES • • • • • • • Very Low Forward Voltage

TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE

Abstract: STTA806D STTA806DI 4a 400V ultra fast diode d2pak diode ed 4c STTA806G STTA806G-TR S 170 MOSFET TRANSISTOR
Contextual Info: STTA806D/DI/G TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 8A VRRM 600V trr (typ) 25ns VF (max) 1.5V K • ■ ■ ■ K Insulated TO-220AC STTA806DI TO-220AC STTA806D FEATURES AND BENEFITS ■ A A K SPECIFIC TO “FREEWHEEL MODE” OPERATIONS: