DIODE 8A 400 V Search Results

st 393

Abstract: STTH8R04 STTH8R04D STTH8R04DI STTH8R04FP STTH8R04G STTH8R04G-TR
Contextual Info: STTH8R04 Ultrafast recovery diode Main product characteristics IF AV 8A VRRM 400 V Tj (max) 175° C VF (typ) 0.9 V trr (typ) 25 ns A K K • Very low switching losses ■ High frequency and high pulsed current operation ■ High junction temperature TO-220FPAC

n539

Abstract: 6A10 DIODE diode 2a05 FRI57 diode 6A10 Diode IN5398 N4003 diode k5 10-16 diode 1n5392 N5398
Contextual Info: DIODE RECTIFIERS GENERAL PURPOSE /1A • 1.SA • 2A • 3A • 8A MAXIMUN Peak Reverse Voltage PRV Max Avg Rect Current @ Half-Wave Res Load 60Hz L @Ta 1N4001 1N4002 ÌN4003 1N4004 1N4005 1N400Ó 1N4007 50 100 200 400 600 800 1000 10 1.0 1.0 Ì0 1.0 1.0

IRGB4060D

Abstract: IRF1010 CT4-15
Contextual Info: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

IRF1010

Abstract: 8A2021
Contextual Info: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

Contextual Info: PD - 97073 IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

BB2L

Abstract: STTA812D STTA812DI STTA812G
Contextual Info: STTA812D/DI/G  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 8A VRRM 1200V trr typ 50ns VF (max) 2.0V K A IF(AV) A A FEATURES AND BENEFITS K ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN

IRF840

Abstract: ISL9R860S3S TB334
Contextual Info: ISL9R860S3S May 2001 Data Sheet itle UF7 3P F76 D3 bA, V, 22 m, an- 8A, 600V Stealth Diode Features The ISL9R860S3S is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse

STTA806DI

Abstract: STTA806D STTA806G STTA806G-TR
Contextual Info: STTA806D/DI/G TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 8A VRRM 600V trr (typ) 25ns VF (max) 1.5V K • ■ ■ ■ K Insulated TO-220AC STTA806DI TO-220AC STTA806D FEATURES AND BENEFITS ■ A A K SPECIFIC TO “FREEWHEEL MODE” OPERATIONS:

F60SA60DS

Abstract: working of ups mosfet 200A FFPF60SA60DS
Contextual Info: FFPF60SA60DS Features • • • • • Soft Recovery tb / ta > 1.2 Fast Recovery (trr < 25ns) Reverse Voltage, 600V Forward Voltage (@ TC = 125°C), < 2.0 V Enhanced Avalanche Energy TO-220F-3L Applications • • • • • • 1 2 3 1 2 3 Switch Mode Power Supplies

TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE

Abstract: STTA812D STTA812DI STTA812G STTA812G-TR
Contextual Info: STTA812D/DI/G  TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 8A VRRM 1200V trr (typ) 50ns VF (max) 2.0V K A A K K TO-220AC Ins. STTA812DI TO-220AC STTA812D FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN

APT8GT60KR

Contextual Info: APT8GT60KR 600V Thunderbolt IGBT TO-220 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop

8N40

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N40 Preliminary Power MOSFET 8 A, 400 V N-CHANNEL POWER MOSFET 1 „ The UTC 8N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

Contextual Info: APT1001R6BFLL_SFLL APT1001R6BFLL APT1001R6SFLL Typical Performance Curves 8A 1.60Ω 1000V POWER MOS 7 R FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ®

APT1001R6BFLL

Abstract: APT1001R6SFLL
Contextual Info: APT1001R6BFLL_SFLL APT1001R6BFLL APT1001R6SFLL Typical Performance Curves 1000V POWER MOS 7 R FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

transistor s72

Abstract: S72 Transistor KS621K40A41 transistor b 1417 transistor s70 powerex ks62
Contextual Info: PUMEVZGf KS621K40A41 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 400 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power

transistor s68

Abstract: s66 transistor transistor S67 KS621K40 transistor b 103 1f s65 powerex ks62 KS621K4
Contextual Info: m ßfBIEK KS621K40 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S ií lQ lG D d r H n g t O n Transistor Module 400 Amperes/1000 Volts O U T L I N E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power

Contextual Info: OM5201ST/RT/DT OM5203ST/RT/DT OM5217ST/RT/DT OM5234ST/RT/DT OM5202ST/RT/DT OM5216ST/RT/DT OM5233ST/RT/DT HERMETIC JEDEC TO-257AA HIGH EFFICIENCY, CENTER-TAP RECTIFIER 16 Amp, 50 To 600 Volts, 35 To 50 ns trr FEATURES • • • • • • • Very Low Forward Voltage

oK31

Abstract: diode ed 8a
Contextual Info: OM5201ST/RT/DT OM5203ST/RT/DT OM5217ST/RT/DT OM5234ST/RT/DT OM5202ST/RT/DT OM5216ST/RT/DT OM5233ST/RT/DT HERMETIC JEDEC TO-257AA HIGH EFFICIENCY, CENTER-TAP RECTIFIER 16 Am p, 50 To 600 Volts, 35 To 50 ns trr FEATURES Very Low Forward Voltage Very Fast Recovery Time

QF30AA60

Abstract: QF20AA60 TRANSISTOR JC SQD200A60 SQD300A40 SQD200A40 D 1380 Transistor SQD400BA60 20S0 sqd300a60
Contextual Info: TRANSISTOR MODULE SQD200A40/60 UL;E76102 （M） 95max 80±0.25 23 23 ● IC＝200A, 62max 48±0.25 15 （Applications） Motor Control（VVVF）, AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 4ｰφ5.5 1 2 3 C1 E1 C1 B2 E2 VCEX＝400/600V

Contextual Info: CO-PAK IGBT SGS5N60RUFD FEATURES TO-220F * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ IC=5A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37ns (Typ.) C APPLICATIONS * AC & DC Motor controls

SGW5N60RUFD

Contextual Info: CO-PAK IGBT SGW5N60RUFD FEATURES D2-PAK * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ IC=5A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37ns (Typ.) C APPLICATIONS * AC & DC Motor controls

200v dc motor igbt

Abstract: SGP5N60RUFD
Contextual Info: CO-PAK IGBT SGP5N60RUFD FEATURES TO-220 * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ IC=5A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37ns (Typ.) C APPLICATIONS * AC & DC Motor controls

IXYP8N90C3D1

Abstract: 8n90c
Contextual Info: Advance Technical Information IXYP8N90C3D1 900V XPTTM IGBT GenX3TM w/Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 8A 2.5V 130ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ

806-AS

Contextual Info: DSEI 8-06A DSEI 8-06AS IFAV = 8 A VRRM = 600 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 DSEI 8-06A 640 600 DSEI 8-06AS Type A C TO-220 AC DSEI 8-06A C A C TO-263 AB DSEI 8-06AS NC A = Anode, C = Cathode, NC = No Connection, TAB = Cathode