DIODE 8A 400 V Search Results

B06A

Abstract: KAV60 DSEI 12 06A B-06A diode 640 Tvj-150
Contextual Info: •4bflbEEb DDDlbEti hhl H I X Y □IXYS DSEI8 Fast Recovery Epitaxial Diode V IFAV v = 8A = 400-600 V < 35 ns Typ *RSU V 440 540 640 D S E I 8 -0 4 A DS EI 8 -05 A D S E I Ô -06A 400 500 600 S ym bol S -s ° M aximum ratings Test conditions 130 A A

Contextual Info: STTH8R04 Ultrafast recovery diode Main product characteristics IF AV 8A VRRM 400 V Tj (max) 175° C VF (typ) 0.9 V trr (typ) 25 ns A K K • Very low switching losses ■ High frequency and high pulsed current operation ■ High junction temperature TO-220FPAC

st 393

Abstract: STTH8R04 STTH8R04D STTH8R04DI STTH8R04FP STTH8R04G STTH8R04G-TR
Contextual Info: STTH8R04 Ultrafast recovery diode Main product characteristics IF AV 8A VRRM 400 V Tj (max) 175° C VF (typ) 0.9 V trr (typ) 25 ns A K K • Very low switching losses ■ High frequency and high pulsed current operation ■ High junction temperature TO-220FPAC

n539

Abstract: 6A10 DIODE diode 2a05 FRI57 diode 6A10 Diode IN5398 N4003 diode k5 10-16 diode 1n5392 N5398
Contextual Info: DIODE RECTIFIERS GENERAL PURPOSE /1A • 1.SA • 2A • 3A • 8A MAXIMUN Peak Reverse Voltage PRV Max Avg Rect Current @ Half-Wave Res Load 60Hz L @Ta 1N4001 1N4002 ÌN4003 1N4004 1N4005 1N400Ó 1N4007 50 100 200 400 600 800 1000 10 1.0 1.0 Ì0 1.0 1.0

f08s60sn

Abstract: diode 8a 600v
Contextual Info: FFP08S60SN tm 8A, 600V, STEALTH II Diode Features • Stealth recovery Trr = 25 ns @ IF = 8 A • Max Forward Voltage, VF = 3.4 V (@ TC = 25°C) The FFP08S60SN is a STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted

IRGS4715D

Contextual Info: IRGB4715DPbF IRGS4715DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C C IC = 15A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 8A G E • Industrial Motor Drive • UPS • Solar Inverters

IRGB4060D

Abstract: IRF1010 CT4-15
Contextual Info: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

Contextual Info: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V IC = 8.0A, TC = 100°C Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C

IRF1010

Abstract: 8A2021
Contextual Info: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

Contextual Info: PD - 97073 IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

STTA806DI

Abstract: STTA806D
Contextual Info: STTA806D I  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 8A VRRM 600V trr (typ) 25ns VF (max) 1.5V K A IF(AV) FEATURES AND BENEFITS A A SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode. ULTRA-FAST RECOVERY.

BB2L

Abstract: STTA812D STTA812DI STTA812G
Contextual Info: STTA812D/DI/G  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 8A VRRM 1200V trr typ 50ns VF (max) 2.0V K A IF(AV) A A FEATURES AND BENEFITS K ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN

IRF840

Abstract: ISL9R860S3S TB334
Contextual Info: ISL9R860S3S May 2001 Data Sheet itle UF7 3P F76 D3 bA, V, 22 m, an- 8A, 600V Stealth Diode Features The ISL9R860S3S is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse

Contextual Info: ISL9R8120P2, ISL9R8120S3S 8 A, 1200 V, STEALTH Diode Features • Stealth Recovery trr = 300 ns @ IF = 8 A • Max Forward Voltage, VF = 3.3 V (@ TC = 25°C) • 1200 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS compliant

APT10078BLL

Abstract: APT11GF120BRDQ1 APT11GF120BRDQ1G JESD24-1
Contextual Info: APT11GF120BRDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT11GF120BRDQ1 APT11GF120BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED TO -2 47 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.

IB12A600

Abstract: E80276 QM400HA-24
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM400HA-24 HIGH POWER SWITCHING USE INSULATED TYPE QM400HA-24 • • • • • IC Collector current . 400A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 75

Contextual Info: APT11GF120BRDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT11GF120BRDQ1 APT11GF120BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED TO -2 47 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.

Diode SMD ED 7ca

Abstract: alps 502 RD SMD 8A TRANSISTOR transistor smd 1FT STTA806M alps 502 C
Contextual Info: / = 7 SGS-THOMSON S T T A 806M IL iO T * ! & _ ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 8A V rrm 600V trr 25ns (typ) 1.5 V V f (max) FEATURE&AND BENEFITS • SPECIFIC TO "FREEWHEEL MODE” OPERA­ TIONS: Freewheel or Booster Diode.

ULTRAFAST RECTIFIER 16A 600V vf 1.7

Abstract: STTB806D STTB806DI
Contextual Info: STTB806D I  TURBOSWITCH  ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 8A VRRM 600V trr (typ) 50ns VF (max) 1.3V K A IF(AV) FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: Snubbing or clamping, demagnetization and rectification.

QM400HA-2H

Abstract: ups diagram E80276
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM400HA-2H HIGH POWER SWITCHING USE INSULATED TYPE QM400HA-2H • • • • • IC Collector current . 400A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75

STTA806D

Abstract: STTA806DI STTA806G STTA806G-TR
Contextual Info: STTA806D/DI/G  TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 8A VRRM 600V trr (typ) 25ns VF (max) 1.5V K A A K K Insulated TO-220AC STTA806DI TO-220AC STTA806D FEATURES AND BENEFITS SPECIFICTO”FREEWHEEL MODE” OPERATIONS:

STTA806DI

Abstract: STTA806D STTA806G STTA806G-TR
Contextual Info: STTA806D/DI/G  TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 8A VRRM 600V trr (typ) 25ns VF (max) 1.5V K A A K K Insulated TO-220AC STTA806DI TO-220AC STTA806D FEATURES AND BENEFITS SPECIFICTO”FREEWHEEL MODE” OPERATIONS:

045C2

Abstract: STTA806DI STTA806D STTA806G STTA806G-TR
Contextual Info: STTA806D/DI/G TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 8A VRRM 600V trr (typ) 25ns VF (max) 1.5V K A A K K Insulated TO-220AC STTA806DI TO-220AC STTA806D FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATIONS:

R460PF2

Abstract: R460P ISL9R460PF2
Contextual Info: ISL9R460PF2 4 A, 600 V, Stealth Diode Features • Stealth Recovery trr = 17 ns @ IF = 4 A • Max Forward Voltage, VF = 2.4 V (@ TC = 25°C) • 600 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant Applications • Switch Mode Power Supplies