IXYP8N90C3D1 Search Results
IXYP8N90C3D1 Price and Stock
IXYS Corporation IXYP8N90C3D1Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3 |
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IXYP8N90C3D1 | 103 | 1 |
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IXYP8N90C3D1 | 103 | 18 |
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IXYP8N90C3D1 | Tube | 300 |
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Littelfuse Inc IXYP8N90C3D1Disc Igbt Xpt-Genx3 To-220Ab/Fp/ Tube; |Littelfuse IXYP8N90C3D1 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXYP8N90C3D1 | Bulk | 300 |
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IXYP8N90C3D1 | Bulk | 8 Weeks | 50 |
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IXYP8N90C3D1 Datasheets Context Search
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Contextual Info: Preliminary Technical Information 900V XPTTM IGBTs GenX3TM w/Diode VCES IC110 VCE sat tfi(typ) IXYA8N90C3D1 IXYP8N90C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 8A 2.5V 130ns TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings VCES VCGR |
Original |
ic110ixya8n90c3d1ixyp8n90c3d1130ns+3 | |
IXYP8N90C3D1
Abstract: 8n90c
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Original |
ixyp8n90c3d1ic110130nso-220+4 | |
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Contextual Info: IXYA8N90C3D1 IXYP8N90C3D1 900V XPTTM IGBTs GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 8A 2.5V 130ns TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ |
Original |
ixya8n90c3d1ixyp8n90c3d1ic110130ns+3 | |
IXYA8N90C3D1Contextual Info: Preliminary Technical Information IXYA8N90C3D1 IXYP8N90C3D1 900V XPTTM IGBTs GenX3TM w/Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 8A 2.5V 130ns TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings VCES VCGR |
Original |
ixya8n90c3d1ixyp8n90c3d1ic110130ns+4 |