DIODE 77G Search Results

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

zener diode 1NU 9F

Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
Contextual Info: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:

MOC2A40-5

Abstract: MOC2A40-10 601 Opto isolator 7255 AN1048 ACS01 motorola triac driver triac 101 amps IEEE472 RS-443
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA POWER OPTO Isolator M O C 2 A 4 0 -1 0 2 Amp Zero-Cross Triac Output M O C 2 A 4 0 -5 * This device consists of a gallium arsenide infrared emitting diode optically coupled to a zero-cross triac driver circuit and a power triac. It is capable of driving

Bedienungsanleitung

Contextual Info: SAFETY ALERT SYMBOL INSTRUCTION MANUAL 77GX - 77GX2 - 150D TONE GENERATORS This symbol is used to call your attention to hazards or unsafe practices which could result in an injury or property damage. The signal word, defined below, indicates the severity of the hazard. The message

FMCW Radar

Abstract: 77GHz Radar infineon FMCW sensor radar 24ghz AN190 diagram radar circuit 77GHz circulator Types of Radar Antenna FMCW circuit FMCW
Contextual Info: Low Barri er RF Sch ottk y Dio d e BAT2 4 Mi xe r f or FMCW Ra dar at 2 4 GHz Application Note AN190 Revision: V1.0 Date: 22-01-2010 RF and Protecti on Devi c es Edition 15-02-2010 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

MB4213

Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors

Contextual Info: SKM 100GB124D Absolute Maximum Ratings Symbol Conditions IGBT 6-7 -: 6!7 <   6 SEMITRANSTM 2 Low Loss IGBT Module SKM 100GB124D + 3 01 B  ?B < 3 041 5- Characteristics Symbol Conditions IGBT 6-7       Typical Applications  $       

100gb124d

Contextual Info: SKM 100GB124D Absolute Maximum Ratings Symbol Conditions IGBT 6-7 -: 6!7 <   6 SEMITRANSTM 2 Low Loss IGBT Module SKM 100GB124D + 3 01 B  ?B < 3 041 5- Characteristics Symbol Conditions IGBT 6-7       Typical Applications  $       

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

77GHz Radar

Abstract: PPH25x ulm 2003 ph15 transistor pph15 transistor HB20M 24GHz Radar military switch PPH25 thales SMD
Contextual Info: UMS MMIC Solutions up to 100GHz The European Source for Products, Solutions and Foundry Services ABOUT US United Monolithic Semiconductors* UMS was created in 1996 to provide a European source of III-V technologies and products. The Company has industrial facilities in Ulm, Germany and Orsay,

ulm 2003

Abstract: 77GHz Radar sas smd transistor PPH15 PPH25X 5gHz SMD RF Mixer SMD Transistor SAs diode catalogue pph15 transistor ulm 2002
Contextual Info: ABOUT US United Monolithic Semiconductors UMS was created in 1996 to provide a European source of III-V technologies and products. The Company has industrial facilities in Germany, USA and France (Headquarters). Your Leading Source for Products, Support & Services

LM2588

Abstract: UPL1V102MRH 67147 Schott 67147420 TL 0621 N ADJUSTABLE VOLTAGE AND CURRENT REGULATOR 12v 30a 67147450 67147410 schematic diagram 48v dc regulator schematic diagram 12v in step-up to out 24v 30a
Contextual Info: May 1995 LM2588 SIMPLE SWITCHER 5A Flyback Regulator General Description Features T he LM 2588 series o f regulators are m onolithic integrated circuits specifically designed fo r flyback, step-up boost , and forw ard co nve rter applications. The device is available

TP890

Contextual Info: FULL-LINE CATALOG39 MultiMeters | Clamp Meters | Thermometers | Airflow Meters | Light Meters | Sound Meters Water Quality Testers | Tachometers | Humidity & Moisture Meters | Video Inspection Cameras www.extech.com Call us or e-mail: 877-439-8324 orders@extech.com.

Contextual Info: Bulletin 12020/A International S R ectifier 200HF R SERIES STANDARD RECOVERY DIODES Stud Version Features High current carrying capability High surge current capability Types up to 1 2 00V V RRM Stud cathode and stud anode version Standard J E D E C types

77G DIODE

Abstract: CA3083F/3W
Contextual Info: C ìA Q fìfìQ HARRIS S E M I C O N D U C T O R J T u General Purpose High Current NPN Transistor Array S e p te m b e r 1 9 9 6 Features Description • High lc . 100mA Max T h e C A 3 0 8 3 is a vers a tile array of five high current (to

infineon ACC_PLL_1

Abstract: 77ghz VCO
Contextual Info: T626_MPA2_W 77 GHz MPA for Car Radar Systems T626_MPA2_W Preliminary Data GaAs MMIC Features • Operating Frequency: 76-77 GHz • Output Power: +13 dBm • Input and Output matched to 50 Ohms • Application in Car Radar Systems ESD: Electrostatic discharge sensitive device, observe handling precautions!

r03003

Abstract: 77GHz Radar FMCW Radar FMCW circuit FMCW VCO 10GHZ oscillator ku-band oscillator 77GH
Contextual Info: CHV2242 Q-band VCO based on Ku-band Oscillator and Q-band Multiplier GaAs Monolithic Microwave IC Description Main Features n Ku-band VCO + Q-band multiplier n On chip varactor n External resonator for centre frequency control and phase noise optimisation

infineon FMCW

Abstract: 77GHz Radar Infineon 77GHz VCO infineon radar 77ghz VCO FMCW circuit ultrasonic power generator with PLL 77 GHz VCO FMCW Radar fmcw
Contextual Info: T625_VCO2_W 77 GHz VCO for Car Radar Systems T625_VCO2_W Preliminary Data GaAs MMIC Features • Operating Frequency: 76-77 GHz • Tuning Range > 1GHz • Output matched to 50 Ohms • Application in Car Radar Systems ESD: Electrostatic discharge sensitive device, observe

77GHz Radar

Abstract: R03003 77ghz VCO FMCW Radar chip varactor varactor diode for x band radar 77GHz R0300
Contextual Info: CHV2242a Q-band VCO based on Ku-band Oscillator and Q-band Multiplier GaAs Monolithic Microwave IC Description +V Main Features n Ku-band VCO + Q-band multiplier n On chip varactor n External resonator for centre frequency control and phase noise optimisation

Contextual Info: ¿77 SGS-1H0MS0N * J I . M » I I U M W P @ i _ L 6 2 3 4 THREE PHASE MOTOR DRIVER ADVANCE DATA . SUPPLY VOLTAGE FROM 7 TO 58V . 5A PEAK CURRENT . DC MAX CURRENT T ^ = 70°C ♦ 1.5A(SO(16+2+2 ♦ 4A (PowerS020) • R ds on 0.3Q TYP VALUE AT 25°C

CHM2378

Abstract: low power dc mixer mmic am
Contextual Info: CHM2378 W-band Dual Channel Mixer GaAs Monolithic Microwave IC Description RF1 The CHM2378 is a dual channel mixer. Each mixer cell is a balanced structure based on a six quarter wave ring. The nonlinear devices are high quality Schottky diodes providing low conversion loss and

Contextual Info: CHM2378a RoHS COMPLIANT W-band Dual Channel Mixer GaAs Monolithic Microwave IC Description RF1 The CHM2378a is a dual channel mixer. Each mixer cell is a balanced structure based on a six quarter wave ring. The nonlinear devices are high quality Schottky diodes providing low conversion loss and

CHM2378

Abstract: dual diode mixer
Contextual Info: CHM2378a W-band Dual Channel Mixer GaAs Monolithic Microwave IC Description RF1 The CHM2378 is a dual channel mixer. Each mixer cell is a balanced structure based on a six quarter wave ring. The nonlinear devices are high quality Schottky diodes providing low conversion loss and